BCR 192F E6327 Equivalent & Substitute Parts

Part Overview

The BCR 192F E6327 is a pre-biased PNP bipolar junction transistor manufactured by Infineon Technologies, designed for surface mount applications in the SOT-723 package. This component integrates internal biasing resistors to simplify circuit design and reduce component count in switching and amplification applications.

The BCR 192F E6327 is classified as obsolete. Locating active production alternatives is necessary to ensure long-term supply chain continuity and support for new designs or production restarts. Substitute parts must maintain electrical compatibility across critical parameters including collector current rating, breakdown voltage, internal resistor values, and saturation characteristics.

Substiute Parts

BCR 192F E6327
Infineon TechnologiesIn Stock: 1241BCR 192F E6327 Datasheet
BCR 192F E6327
Current Part
DTA124EM3T5G
onsemiIn Stock: 945DTA124EM3T5G Datasheet
DTA124EM3T5G
MFR Recommended
DTA124XM3T5G
onsemiIn Stock: 879DTA124XM3T5G Datasheet
DTA124XM3T5G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) Max 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 47 kOhms
Frequency - Transition 200 MHz
Power - Max 250 mW
Package / Case SOT-723
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for the BCR 192F E6327 is determined by strict alignment with the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Transistor type: PNP - Pre-Biased configuration
  • Maximum collector current: 100 mA
  • Collector-emitter breakdown voltage: 50 V
  • Internal base resistor (R1): 22 kOhms
  • Internal emitter-base resistor (R2): 47 kOhms (or 22 kOhms where specified)
  • Package: SOT-723 surface mount
  • Mounting compatibility: Surface mount technology

Acceptable Variation Parameters:

  • DC current gain (hFE): Variations within typical operating ranges
  • Vce saturation: Variations within 250–300 mV range at specified test conditions
  • Transition frequency: Minimum 200 MHz
  • Power dissipation: Equal to or greater than 250 mW
  • Product status: Active production preferred for supply continuity

The substitute parts DTA124EM3T5G and DTA124XM3T5G, both manufactured by onsemi, meet all critical matching parameters and are classified as active products.

Parameter Comparison

Parameter BCR 192F E6327 (Infineon) DTA124EM3T5G (onsemi) DTA124XM3T5G (onsemi)
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) Max 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V
Resistor - Base (R1) 22 kOhms 22 kOhms 22 kOhms
Resistor - Emitter Base (R2) 47 kOhms 22 kOhms 47 kOhms
DC Current Gain (hFE) Min @ Ic, Vce 70 @ 5mA, 5V 60 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 100nA 500nA 500nA
Frequency - Transition 200 MHz Not specified Not specified
Power - Max 250 mW 260 mW 260 mW
Package / Case SOT-723 SOT-723 SOT-723
Mounting Type Surface Mount Surface Mount Surface Mount
Product Status Obsolete Active Active
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

DTA124EM3T5G (onsemi) - Tape & Reel Packaging:

This substitute is suitable for high-volume production environments. The part is actively manufactured and carries ROHS3 compliance certification. The internal emitter-base resistor differs from the original (22 kOhms versus 47 kOhms), which affects biasing characteristics. The DC current gain specification (60 @ 5mA, 10V) is lower than the BCR 192F E6327 (70 @ 5mA, 5V), and the collector cutoff current is higher (500nA versus 100nA). These differences require circuit-level evaluation to confirm functional equivalence in the target application.

DTA124XM3T5G (onsemi) - Cut Tape Packaging:

This substitute maintains the original internal resistor configuration (R2 = 47 kOhms) and offers superior DC current gain (80 @ 5mA, 10V). The part is actively manufactured with ROHS3 compliance. The collector cutoff current specification (500nA) is higher than the original. Cut tape packaging is appropriate for lower-volume or prototype applications. This variant provides closer electrical alignment to the BCR 192F E6327 across key biasing parameters.

Both onsemi substitutes provide improved power dissipation ratings (260 mW versus 250 mW) and maintain identical collector current and breakdown voltage specifications. Selection between the two onsemi variants depends on packaging requirements and circuit sensitivity to internal resistor values and DC current gain characteristics.

Frequently Asked Questions (FAQ)

Q: Can DTA124EM3T5G and DTA124XM3T5G be used interchangeably with BCR 192F E6327?

A: Both parts share identical collector current (100 mA), breakdown voltage (50 V), base resistor (22 kOhms), and SOT-723 package specifications. However, DTA124EM3T5G has a different emitter-base resistor value (22 kOhms versus 47 kOhms), which affects circuit biasing. DTA124XM3T5G maintains the original 47 kOhms configuration. Circuit-level verification is required to confirm functional equivalence in the specific application.

Q: Why is the BCR 192F E6327 listed as obsolete?

A: Obsolete status indicates that Infineon Technologies has discontinued production. The onsemi DTA124 series provides active production alternatives with compatible electrical specifications and improved compliance certifications.

Q: What is the difference between DTA124EM3T5G (Tape & Reel) and DTA124XM3T5G (Cut Tape)?

A: Both parts are electrically identical except for packaging format. Tape & Reel (TR) packaging is optimized for automated high-volume assembly. Cut Tape (CT) packaging is suitable for lower-volume production, prototyping, or manual assembly. The internal resistor configuration differs: DTA124EM3T5G uses 22 kOhms for R2, while DTA124XM3T5G uses 47 kOhms for R2.

Q: Are the onsemi substitutes RoHS compliant?

A: Yes. Both DTA124EM3T5G and DTA124XM3T5G carry ROHS3 compliance certification. The BCR 192F E6327 RoHS status is not specified in the provided data.

Q: What are the key electrical differences between the main part and substitutes?

A: The primary differences are DC current gain (BCR 192F E6327: 70 @ 5mA, 5V; DTA124EM3T5G: 60 @ 5mA, 10V; DTA124XM3T5G: 80 @ 5mA, 10V), collector cutoff current (BCR 192F E6327: 100nA; both onsemi parts: 500nA), and internal resistor configuration (DTA124EM3T5G differs in R2 value). Power dissipation is slightly higher in the onsemi parts (260 mW versus 250 mW).

Q: Can I use these substitutes in existing designs without circuit modification?

A: Electrical compatibility must be verified at the circuit level. While package and primary electrical ratings match, differences in DC current gain, internal resistor values, and saturation characteristics may require design review or component-level testing to ensure performance meets application requirements.

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