BCR192E6785HTSA1 Equivalent & Substitute Parts

Part Overview

The BCR192E6785HTSA1 is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies, designed for surface mount applications in the SOT-23-3 package. This component integrates internal base and emitter resistors (22 kΩ and 47 kΩ respectively) to simplify circuit design and reduce component count. The device is qualified to AEC-Q101 automotive standards and carries RoHS3 compliance certification.

The BCR192E6785HTSA1 is currently designated as Last Time Buy, indicating that Infineon has discontinued or will discontinue production. This status necessitates identification of functionally equivalent substitute components to ensure design continuity and supply chain reliability for ongoing production and maintenance applications.

Substiute Parts

BCR192E6785HTSA1

Infineon TechnologiesIn Stock: 880BCR192E6785HTSA1 Datasheet

Current PartRFQ

DDTA124XCA-7-F

Diodes IncorporatedIn Stock: 6283DDTA124XCA-7-F Datasheet

MFR RecommendedRFQ

MMUN2134LT1G

onsemiIn Stock: 20262MMUN2134LT1G Datasheet

MFR RecommendedRFQ

SMMUN2134LT1G

onsemiIn Stock: 10106SMMUN2134LT1G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the BCR192E6785HTSA1 is determined by strict equivalence of the following critical parameters:

Mandatory Equivalence Criteria:

• Transistor type: PNP - Pre-Biased configuration
• Maximum collector current: 100 mA
• Collector-emitter breakdown voltage: 50 V
• Base resistor value: 22 kΩ
• Emitter-base resistor value: 47 kΩ
• Package type: SOT-23-3 (TO-236-3, SC-59)
• Mounting type: Surface Mount

Allowable Parameter Variations: Substitute parts may exhibit the following variations while maintaining functional equivalence:

• DC current gain (hFE): Minimum values between 68 and 80 at specified test conditions
• Vce saturation: Maximum values between 250 mV and 300 mV at specified test conditions
• Collector cutoff current (ICBO): Maximum values between 100 nA and 500 nA
• Transition frequency: Values at or above 200 MHz
• Maximum power dissipation: Values at or above 200 mW

All identified substitute parts meet these criteria and are available from active manufacturers with current production status and full RoHS3 compliance.

Parameter Comparison

Engineering Selection Recommendations

DDTA124XCA-7-F (Diodes Incorporated)

The DDTA124XCA-7-F is a manufacturer-recommended substitute with active production status. This component maintains identical electrical specifications for all critical parameters including collector current, breakdown voltage, and internal resistor values. The DDTA124XCA-7-F exhibits a higher transition frequency (250 MHz versus 200 MHz), providing enhanced performance margin. Collector cutoff current is specified at 500 nA, which is within acceptable tolerance for pre-biased transistor applications. This part is supplied in Tape & Reel packaging with 6200 units currently in stock. Full RoHS3 and REACH compliance is maintained.

MMUN2134LT1G (onsemi)

The MMUN2134LT1G is an active production substitute manufactured by onsemi. This device maintains all mandatory electrical equivalence criteria with identical collector current, breakdown voltage, and resistor values. The part exhibits improved DC current gain (80 minimum versus 70 minimum) and lower saturation voltage (250 mV versus 300 mV), representing enhanced switching performance. Maximum power dissipation is rated at 246 mW, exceeding the original specification. The MMUN2134LT1G is supplied in Cut Tape & Digi-Reel packaging with 20,169 units in current inventory. Full RoHS3 compliance and MSL 1 rating are confirmed.

SMMUN2134LT1G (onsemi)

The SMMUN2134LT1G is functionally identical to the MMUN2134LT1G with the same electrical specifications and performance characteristics. The primary distinction is packaging format: SMMUN2134LT1G is supplied in Tape & Reel configuration with 9,997 units in stock. This variant is suitable for high-volume automated assembly operations. All compliance certifications and electrical parameters are equivalent to the MMUN2134LT1G.

Product Status Consideration

The BCR192E6785HTSA1 carries Last Time Buy status, indicating production discontinuation. All three substitute parts are designated as Active, ensuring long-term availability and supply chain stability. Selection among the three substitutes should be based on packaging requirements (Cut Tape versus Tape & Reel), inventory availability, and lead time considerations specific to the application.

Frequently Asked Questions (FAQ)

Q: Can the DDTA124XCA-7-F directly replace the BCR192E6785HTSA1 in existing designs?

A: Yes. The DDTA124XCA-7-F maintains identical electrical specifications for all critical parameters: 100 mA collector current, 50 V breakdown voltage, 22 kΩ base resistor, and 47 kΩ emitter-base resistor. The SOT-23-3 package is mechanically and electrically compatible. The higher transition frequency (250 MHz) provides performance margin without introducing incompatibility.

Q: What is the difference between MMUN2134LT1G and SMMUN2134LT1G?

A: Both parts are electrically identical with the same specifications and performance characteristics. The difference is packaging format: MMUN2134LT1G is supplied in Cut Tape & Digi-Reel format, while SMMUN2134LT1G is supplied in Tape & Reel format. Selection depends on assembly equipment compatibility and volume requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All three substitute parts (DDTA124XCA-7-F, MMUN2134LT1G, and SMMUN2134LT1G) are certified RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the original BCR192E6785HTSA1 specifications.

Q: Why do the substitute parts show different hFE values?

A: DC current gain (hFE) is measured at different test conditions across manufacturers. The BCR192E6785HTSA1 specifies hFE minimum of 70 at 5 mA and 5 V, while MMUN2134LT1G and SMMUN2134LT1G specify hFE minimum of 80 at 5 mA and 10 V. These variations are within acceptable tolerance for pre-biased transistor applications and do not affect functional equivalence.

Q: Is the higher collector cutoff current (500 nA) in substitute parts a concern?

A: No. The increase from 100 nA to 500 nA in ICBO specification is within acceptable tolerance for pre-biased transistor applications. This parameter has minimal impact on circuit performance in typical switching and amplification configurations.

Q: Can I use these substitutes in automotive applications?

A: The BCR192E6785HTSA1 carries AEC-Q101 automotive qualification. While the substitute parts (DDTA124XCA-7-F, MMUN2134LT1G, SMMUN2134LT1G) are not explicitly listed with AEC-Q101 certification in the provided specifications, they are manufactured by established semiconductor suppliers with full RoHS3 compliance. Verification of automotive qualification requirements should be conducted with the respective manufacturers for critical automotive applications.

Q: What inventory levels are available for each substitute?

A: Current inventory levels are: DDTA124XCA-7-F (6,200 units), MMUN2134LT1G (20,169 units), and SMMUN2134LT1G (9,997 units). These quantities support both immediate requirements and ongoing production needs.