BCR 185F E6327 Equivalent & Substitute Parts

Part Overview

The BCR 185F E6327 is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies, designed for surface mount applications in the SC-101/SOT-883 package. This component integrates internal base and emitter resistors, enabling simplified circuit design for switching and amplification applications requiring 50 V collector-emitter breakdown voltage and 100 mA maximum collector current.

The BCR 185F E6327 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Substitute components must maintain electrical compatibility across critical parameters including voltage ratings, current specifications, internal resistor values, and saturation characteristics.

Substiute Parts

BCR 185F E6327
Infineon TechnologiesIn Stock: 1142BCR 185F E6327 Datasheet
BCR 185F E6327
Current Part
DTA114EM3T5G
onsemiIn Stock: 25739DTA114EM3T5G Datasheet
DTA114EM3T5G
MFR Recommended
DTA114YCAT116
Rohm SemiconductorIn Stock: 1236DTA114YCAT116 Datasheet
DTA114YCAT116
MFR Recommended
DTA114YM3T5G
onsemiIn Stock: 8592DTA114YM3T5G Datasheet
DTA114YM3T5G
MFR Recommended
MMUN2114LT1G
onsemiIn Stock: 86265MMUN2114LT1G Datasheet
MMUN2114LT1G
MFR Recommended
MMUN2114LT3G
onsemiIn Stock: 20769MMUN2114LT3G Datasheet
MMUN2114LT3G
MFR Recommended
MUN2114T1G
onsemiIn Stock: 4599MUN2114T1G Datasheet
MUN2114T1G
MFR Recommended
NSVMMUN2114LT3G
onsemiIn Stock: 976NSVMMUN2114LT3G Datasheet
NSVMMUN2114LT3G
MFR Recommended
PDTA114YT,215
Nexperia USA Inc.In Stock: 3902PDTA114YT,215 Datasheet
PDTA114YT,215
MFR Recommended
SMUN2114T1G
onsemiIn Stock: 30241SMUN2114T1G Datasheet
SMUN2114T1G
MFR Recommended

Key Parameters

Parameter BCR 185F E6327 Unit
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) Max 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) Min @ Ic, Vce 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA
Frequency - Transition 200 MHz
Power - Max 250 mW
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for the BCR 185F E6327 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Transistor type: PNP - Pre-Biased configuration
  • Maximum collector current: 100 mA
  • Collector-emitter breakdown voltage: 50 V
  • Base resistor (R1): 10 kOhms
  • Emitter-base resistor (R2): 47 kOhms (primary group) or 10 kOhms (secondary group)
  • Saturation voltage characteristics: Maximum 300 mV or lower at specified bias conditions
  • Collector cutoff current: 100 nA to 500 nA range
  • Mounting type: Surface mount

Package Compatibility: Substitute parts are grouped by package type. The original BCR 185F E6327 uses SC-101/SOT-883 packaging. Substitutes in SOT-23-3, SC-59, and SOT-723 packages are electrically equivalent but require PCB layout modification. Substitutes with identical R2 value (47 kOhms) provide direct functional equivalence. Parts with R2 = 10 kOhms represent an alternative internal resistor configuration and require circuit evaluation.

Product Status Consideration: Active status substitutes are preferred for new designs and ongoing production. Last Time Buy and obsolete status parts are suitable only for legacy system support with confirmed supply availability.

Parameter Comparison

Part Number Manufacturer Ic Max (mA) Vce Breakdown (V) R1 (kOhms) R2 (kOhms) hFE Min @ 5mA Vce Sat Max (mV) Icbo Max (nA) Power Max (mW) Package Status
BCR 185F E6327 Infineon 100 50 10 47 70 @ 5V 300 @ 500µA, 10mA 100 250 SC-101, SOT-883 Obsolete
DTA114EM3T5G onsemi 100 50 10 10 35 @ 10V 250 @ 300µA, 10mA 500 260 SOT-723 Active
DTA114YCAT116 Rohm Semiconductor 100 50 10 47 68 @ 5V 300 @ 250µA, 5mA 500 200 TO-236-3, SC-59, SOT-23-3 Active
DTA114YM3T5G onsemi 100 50 10 47 80 @ 10V 250 @ 300µA, 10mA 500 260 SOT-723 Active
MMUN2114LT1G onsemi 100 50 10 47 80 @ 10V 250 @ 300µA, 10mA 500 246 TO-236-3, SC-59, SOT-23-3 Active
MMUN2114LT3G onsemi 100 50 10 47 80 @ 10V 250 @ 300µA, 10mA 500 246 TO-236-3, SC-59, SOT-23-3 Active
MUN2114T1G onsemi 100 50 10 47 80 @ 10V 250 @ 300µA, 10mA 500 230 TO-236-3, SC-59, SOT-23-3 Active
NSVMMUN2114LT3G onsemi 100 50 10 47 80 @ 10V 250 @ 300µA, 10mA 500 246 TO-236-3, SC-59, SOT-23-3 Last Time Buy
PDTA114YT,215 Nexperia USA Inc. 100 50 10 47 100 @ 5V 100 @ 250µA, 5mA 100 250 TO-236-3, SC-59, SOT-23-3 Active
SMUN2114T1G onsemi 100 50 10 47 80 @ 10V 250 @ 300µA, 10mA 500 230 TO-236-3, SC-59, SOT-23-3 Active

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

DTA114YCAT116 (Rohm Semiconductor) and PDTA114YT,215 (Nexperia USA Inc.) are the preferred substitutes. Both maintain identical internal resistor configuration (R1 = 10 kOhms, R2 = 47 kOhms), matching the original BCR 185F E6327 electrical characteristics. DTA114YCAT116 is active status with RoHS3 compliance. PDTA114YT,215 is active status with automotive qualification (AEC-Q100) and RoHS3 compliance, providing additional reliability assurance for demanding applications.

Secondary Substitutes (Package-Dependent Selection):

For SOT-23-3 package applications: MMUN2114LT1G, MMUN2114LT3G, MUN2114T1G, and SMUN2114T1G are active status alternatives with identical electrical parameters (R1 = 10 kOhms, R2 = 47 kOhms). All are RoHS3 compliant. MMUN2114LT1G and MMUN2114LT3G offer 246 mW power rating. MUN2114T1G and SMUN2114T1G offer 230 mW power rating.

For SOT-723 package applications: DTA114YM3T5G (onsemi) maintains R1 = 10 kOhms and R2 = 47 kOhms configuration with 260 mW power rating and active status. RoHS3 compliant.

Alternative Configuration (R2 = 10 kOhms):

DTA114EM3T5G (onsemi) features alternative internal resistor configuration with R2 = 10 kOhms. This part is active status, RoHS3 compliant, and suitable only when circuit design accommodates the modified base-emitter resistor network.

Automotive Applications:

NSVMMUN2114LT3G (onsemi) is AEC-Q101 qualified automotive grade, suitable for automotive applications. Status is Last Time Buy; confirm supply availability before design commitment.

PDTA114YT,215 (Nexperia) is AEC-Q100 qualified automotive grade with active status, recommended for new automotive designs.

Frequently Asked Questions (FAQ)

Q: Can BCR 185F E6327 be directly replaced with any of the listed substitutes?

A: Direct replacement depends on package compatibility. DTA114YCAT116, PDTA114YT,215, MMUN2114LT1G, MMUN2114LT3G, MUN2114T1G, and SMUN2114T1G are electrically equivalent with identical internal resistor values (R1 = 10 kOhms, R2 = 47 kOhms). However, the original BCR 185F E6327 uses SC-101/SOT-883 packaging. Substitutes in SOT-23-3 or SC-59 packages require PCB layout modification. DTA114YM3T5G in SOT-723 package also requires layout changes. Verify PCB footprint compatibility before implementation.

Q: What is the significance of the internal resistor values (R1 and R2)?

A: The internal base resistor (R1 = 10 kOhms) and emitter-base resistor (R2 = 47 kOhms or 10 kOhms) determine the pre-bias network characteristics and switching behavior. Parts with matching R1 and R2 values maintain identical circuit performance. DTA114EM3T5G with R2 = 10 kOhms represents an alternative configuration requiring circuit evaluation. Substitutes with R2 = 47 kOhms provide direct functional equivalence.

Q: Are all listed substitutes RoHS3 compliant?

A: All active status substitutes listed are RoHS3 compliant. NSVMMUN2114LT3G (Last Time Buy status) is also RoHS3 compliant. The original BCR 185F E6327 (obsolete status) does not specify RoHS compliance in the provided data.

Q: What is the difference between onsemi, Rohm Semiconductor, and Nexperia parts?

A: All three manufacturers produce pre-biased PNP transistors meeting the specified electrical parameters. Rohm Semiconductor DTA114YCAT116 and Nexperia PDTA114YT,215 are active status with established supply chains. onsemi offers multiple package options (SOT-723, SOT-23-3, SC-59) across DTA114, MMUN2114, MUN2114, and SMUN2114 series. Selection depends on package requirement and supply availability.

Q: Can PDTA114YT,215 be used in automotive applications?

A: Yes. PDTA114YT,215 is AEC-Q100 qualified automotive grade with active status, making it suitable for automotive applications requiring pre-biased PNP transistors with 50 V rating and 100 mA collector current.

Q: What is the difference between MMUN2114LT1G and MMUN2114LT3G?

A: Both parts are electrically identical with matching electrical parameters (R1 = 10 kOhms, R2 = 47 kOhms, 100 mA Ic, 50 V Vce, 246 mW power rating). The designation difference (LT1G vs. LT3G) reflects manufacturing or packaging variants. Both are active status and RoHS3 compliant. Consult manufacturer datasheets for specific packaging or tape configuration differences.

Q: Is NSVMMUN2114LT3G recommended for new designs?

A: NSVMMUN2114LT3G is classified as Last Time Buy status. It is suitable for legacy system support and ongoing production of existing designs with confirmed supply availability. For new designs, select active status alternatives such as MMUN2114LT1G, MMUN2114LT3G, MUN2114T1G, SMUN2114T1G, or PDTA114YT,215.

Q: What power dissipation differences exist among substitutes?

A: Power ratings range from 200 mW to 260 mW. DTA114YCAT116 specifies 200 mW. PDTA114YT,215 and DTA114YM3T5G specify 250 mW and 260 mW respectively. MUN2114T1G and SMUN2114T1G specify 230 mW. MMUN2114LT1G and MMUN2114LT3G specify 246 mW. All ratings exceed the original BCR 185F E6327 specification of 250 mW or are equivalent. Verify thermal design requirements for specific application.

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