BCR 183 B6327 Pre-Biased PNP Transistor Equivalent & Substitute Parts

Part Overview

The BCR 183 B6327 is a pre-biased PNP bipolar junction transistor manufactured by Infineon Technologies, designed for surface mount applications in the SOT-23-3 package. This component integrates internal base and emitter resistors (10 kOhms each) to simplify circuit design and reduce component count. The device is rated for 50 V collector-emitter breakdown voltage, 100 mA maximum collector current, and 200 mW power dissipation.

The BCR 183 B6327 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Active alternatives with identical or superior electrical characteristics are available from multiple manufacturers including Diodes Incorporated, NXP USA Inc., and onsemi.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP - Pre-Biased	—
Collector Current (Ic) Maximum	100	mA
Collector-Emitter Breakdown Voltage (Vceo)	50	V
Base Resistor (R1)	10	kOhms
Emitter-Base Resistor (R2)	10	kOhms
DC Current Gain (hFE) Minimum	30	@ 5mA, 5V
Vce Saturation Maximum	300	mV @ 500µA, 10mA
Collector Cutoff Current (Icbo)	100	nA
Transition Frequency	200	MHz
Power Dissipation Maximum	200	mW
Package Type	TO-236-3, SC-59, SOT-23-3	—
Mounting Type	Surface Mount	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the BCR 183 B6327 is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

Transistor type: PNP - Pre-Biased configuration
Collector current rating: 100 mA minimum
Collector-emitter breakdown voltage: 50 V minimum
Base resistor value: 10 kOhms
Emitter-base resistor value: 10 kOhms
DC current gain (hFE): 30 minimum at specified test conditions
Package compatibility: TO-236-3, SC-59, or SOT-23-3 surface mount

Acceptable Parameter Variations:

Vce saturation: up to 300 mV (BCR 183 B6327 specifies 300 mV; some substitutes specify 150 mV, which is superior)
Collector cutoff current: up to 1 µA (BCR 183 B6327 specifies 100 nA; higher values remain within acceptable operating margins)
Transition frequency: 200 MHz minimum (BCR 183 B6327 specifies 200 MHz; substitutes at 250 MHz provide improved performance)
Power dissipation: 200 mW minimum (some substitutes rated to 230 mW or 250 mW)

Substitutes are grouped into two categories: Direct Electrical Equivalents (matching all core parameters) and Enhanced Performance Alternatives (superior specifications within the same functional class).

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic (Max) mA	Vceo (Max) V	R1 kOhms	R2 kOhms	hFE Min @ 5mA	Vce Sat (Max) mV	Icbo (Max)	Fт MHz	Power mW	Package
BCR 183 B6327	Infineon Technologies	Obsolete	100	50	10	10	30	300	100 nA	200	200	SOT-23-3
DDTA114ECAQ-13-F	Diodes Incorporated	Active	100	50	10	10	30	300	500 nA	250	200	SOT-23-3
DDTA114ECAQ-7-F	Diodes Incorporated	Active	100	50	10	10	30	300	500 nA	250	200	SOT-23-3
PDTA114ET,215	Nexperia USA Inc.	Active	100	50	10	10	30	150	1 µA	—	250	SOT-23-3
PDTA114ET,235	NXP USA Inc.	Active	100	50	10	10	30	150	1 µA	—	250	SOT-23-3
SMUN2111T1G	onsemi	Active	100	50	10	10	35	250	500 nA	—	230	SC-59
SMUN2111T3G	onsemi	Active	100	50	10	10	35	250	500 nA	—	230	SC-59
DDTA114ECA-7-F	Diodes Incorporated	Active	100	50	10	10	30	300	500 nA	250	200	SOT-23-3
DTA114EKAT146	Rohm Semiconductor	Active	50	50	10	10	30	300	500 nA	250	200	SMT3

Engineering Selection Recommendations

Tier 1 - Direct Equivalents (Recommended Primary Substitutes):

DDTA114ECA-7-F (Diodes Incorporated) and DDTA114ECAQ-7-F (Diodes Incorporated) are the primary recommended substitutes. Both devices are active products with AEC-Q101 automotive qualification, RoHS3 compliance, and identical electrical specifications to the BCR 183 B6327 except for improved transition frequency (250 MHz vs. 200 MHz). These parts are available in high inventory quantities and are suitable for direct replacement in existing designs.

PDTA114ET,235 (NXP USA Inc.) is an active alternative with superior Vce saturation performance (150 mV vs. 300 mV) and higher power rating (250 mW vs. 200 mW). This part offers enhanced switching characteristics and is available in high volume.

Tier 2 - Performance-Enhanced Alternatives:

SMUN2111T1G and SMUN2111T3G (onsemi) are active automotive-qualified parts with AEC-Q101 certification. These devices feature improved DC current gain (35 vs. 30) and lower Vce saturation (250 mV vs. 300 mV). The SC-59 package is mechanically and electrically compatible with SOT-23-3 applications.

Tier 3 - Current-Limited Alternative:

DTA114EKAT146 (Rohm Semiconductor) is an active substitute with identical resistor values and package compatibility. This device is rated for 50 mA maximum collector current, which is half the BCR 183 B6327 rating. Selection of this part is appropriate only for applications where collector current does not exceed 50 mA.

Compliance and Certification Status:

All recommended substitutes are RoHS3 compliant and REACH unaffected. Automotive-grade variants (DDTA114ECAQ series, SMUN2111 series) carry AEC-Q101 qualification. All parts maintain MSL 1 (Unlimited) moisture sensitivity rating.

Frequently Asked Questions (FAQ)

Q1: Can DDTA114ECAQ-13-F and DDTA114ECAQ-7-F be used interchangeably with BCR 183 B6327?

A: Yes. Both Diodes Incorporated parts are direct electrical equivalents with identical core specifications (100 mA Ic, 50 V Vceo, 10 kOhm resistors, 30 hFE minimum). The suffix designations (-13-F and -7-F) indicate different manufacturing date codes or tape reel configurations but do not affect electrical performance. Both are active products with superior transition frequency (250 MHz vs. 200 MHz).

Q2: What is the difference between PDTA114ET,215 and PDTA114ET,235?

A: Both are NXP/Nexperia pre-biased PNP transistors with identical electrical specifications. The suffix designates packaging configuration: ,215 indicates Tape & Reel (TR) packaging, while ,235 indicates Bulk packaging. Electrical performance is identical. Selection depends on procurement and assembly requirements.

Q3: Are onsemi SMUN2111T1G and SMUN2111T3G suitable replacements for BCR 183 B6327?

A: Yes, with package consideration. Both onsemi parts meet all electrical requirements and offer improved performance (hFE 35 vs. 30, Vce saturation 250 mV vs. 300 mV). Both are packaged in SC-59, which is mechanically and electrically equivalent to SOT-23-3. Both carry AEC-Q101 automotive qualification.

Q4: Why is DTA114EKAT146 listed as a substitute if it has only 50 mA maximum collector current?

A: DTA114EKAT146 is a valid substitute only for applications where collector current does not exceed 50 mA. The device maintains all other electrical specifications (50 V Vceo, 10 kOhm resistors, 30 hFE minimum) and is an active product with high inventory availability. Use this part only after confirming that circuit design does not require the full 100 mA rating.

Q5: What is the significance of the transition frequency difference (200 MHz vs. 250 MHz)?

A: Transition frequency (Fт) indicates the frequency at which current gain drops to unity. The BCR 183 B6327 specifies 200 MHz; most active substitutes specify 250 MHz. Higher transition frequency provides improved high-frequency performance and faster switching response. This is a beneficial parameter improvement and does not create compatibility issues.

Q6: Are all listed substitutes RoHS3 compliant?

A: Yes. All active substitute parts listed carry RoHS3 compliance status. The BCR 183 B6327 (obsolete) does not specify RoHS status. All substitutes are REACH unaffected.

Q7: Which substitute offers the best overall performance improvement?

A: PDTA114ET,235 (NXP USA Inc.) provides the most significant performance enhancement: Vce saturation reduced to 150 mV (vs. 300 mV), power rating increased to 250 mW (vs. 200 mW), and improved DC current gain characteristics. This part is available in high volume (155,928 pcs in stock) and is suitable for direct replacement.

Q8: Can I use DDTC114ECA-7-F or DDTC115ECA-7-F as substitutes?

A: No. DDTC114ECA-7-F and DDTC115ECA-7-F are NPN pre-biased transistors, not PNP. The BCR 183 B6327 is a PNP device. NPN and PNP transistors have opposite polarity and cannot be substituted without circuit redesign. These parts are listed in the source data but are not valid equivalents.

Q9: What packaging considerations apply when selecting a substitute?

A: The BCR 183 B6327 is specified for TO-236-3, SC-59, or SOT-23-3 packages. All listed PNP substitutes use compatible packages. SMUN2111T1G and SMUN2111T3G use SC-59 designation, which is mechanically and electrically equivalent to SOT-23-3. DTA114EKAT146 uses SMT3 designation, also compatible. No package conversion is required for any recommended substitute.

Q10: What inventory status should I consider when selecting a substitute?

A: PDTA114ET,235 has the highest inventory availability (155,928 pcs). DDTA114ECA-7-F has 158,200 pcs available. SMUN2111T1G has 87,300 pcs. All recommended substitutes are in active production with substantial stock levels, ensuring supply chain continuity.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message