BCR166B6327HTLA1 Equivalent & Substitute Parts

Part Overview

The BCR166B6327HTLA1 is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies, designed for surface mount applications in the SOT-23-3 package. This component integrates internal base and emitter-base resistors, enabling simplified circuit design for switching and amplification applications. The device is rated for 50 V collector-emitter breakdown voltage, 100 mA maximum collector current, and 200 mW power dissipation.

The BCR166B6327HTLA1 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Active alternatives with compatible electrical and mechanical specifications are available from multiple manufacturers.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP - Pre-Biased	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	4.7	kOhms
Resistor - Emitter Base (R2)	47	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 5mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA	—
Current - Collector Cutoff (Max)	100	nA
Frequency - Transition	160	MHz
Power - Max	200	mW
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Mounting Type	Surface Mount	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the BCR166B6327HTLA1 is determined by the following critical parameters:

Mandatory Matching Parameters:

Transistor Type: PNP - Pre-Biased
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA (minimum requirement)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200 mW (minimum requirement)

Internal Resistor Configuration: The BCR166B6327HTLA1 features R1 = 4.7 kOhms and R2 = 47 kOhms. Substitute parts are grouped into two categories based on internal resistor values:

Group A - Matched Resistor Configuration (R1 = 4.7 kOhms, R2 = 47 kOhms): These parts provide direct functional equivalence with identical internal biasing networks:

DDTA143ZCA-7-F (Diodes Incorporated)
DTA143ZCA-TP (Micro Commercial Co)
DTA143ZKAT146 (Rohm Semiconductor)

Group B - Alternative Resistor Configurations: These parts meet core electrical specifications but feature different internal resistor values, requiring circuit evaluation:

DDTA143TCA-7-F (Diodes Incorporated) — R1 = 4.7 kOhms, R2 not specified
DTA113ZKAT146 (Rohm Semiconductor) — R1 = 1 kOhms, R2 = 10 kOhms
DTA143EKAT146 (Rohm Semiconductor) — R1 = 4.7 kOhms, R2 = 4.7 kOhms
DTA143EKAT246 (Rohm Semiconductor) — R1 = 4.7 kOhms, R2 = 4.7 kOhms
DTB113ZKT146 (Rohm Semiconductor) — Ic (Max) = 500 mA, R1 = 1 kOhms, R2 = 10 kOhms
MMUN2113LT1G (onsemi) — R1 = 47 kOhms, R2 = 47 kOhms
MMUN2113LT3G (onsemi) — R1 = 47 kOhms, R2 = 47 kOhms

All substitute parts maintain the 50 V breakdown voltage, 100 mA collector current rating (or higher), 200 mW power dissipation, and SOT-23-3 package compatibility.

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic (Max) mA	Vce Breakdown (Max) V	R1 kOhms	R2 kOhms	hFE (Min) @ Ic, Vce	Vce Sat (Max) mV	Frequency MHz	Power mW	Package
BCR166B6327HTLA1	Infineon Technologies	Obsolete	100	50	4.7	47	70 @ 5mA, 5V	300 @ 500µA, 10mA	160	200	SOT-23-3
DDTA143TCA-7-F	Diodes Incorporated	Active	100	50	4.7	—	100 @ 1mA, 5V	300 @ 250µA, 2.5mA	250	200	SOT-23-3
DDTA143ZCA-7-F	Diodes Incorporated	Active	100	50	4.7	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	250	200	SOT-23-3
DTA113ZKAT146	Rohm Semiconductor	Active	100	50	1	10	33 @ 5mA, 5V	300 @ 500µA, 10mA	250	200	SOT-23-3
DTA143EKAT146	Rohm Semiconductor	Active	100	50	4.7	4.7	30 @ 10mA, 5V	300 @ 500µA, 10mA	250	200	SOT-23-3
DTA143EKAT246	Rohm Semiconductor	Active	100	50	4.7	4.7	30 @ 10mA, 5V	300 @ 500µA, 10mA	250	200	SOT-23-3
DTA143ZCA-TP	Micro Commercial Co	Active	100	50	4.7	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	250	200	SOT-23-3
DTA143ZKAT146	Rohm Semiconductor	Active	100	50	4.7	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	250	200	SOT-23-3
DTB113ZKT146	Rohm Semiconductor	Active	500	50	1	10	56 @ 50mA, 5V	300 @ 2.5mA, 50mA	200	200	SOT-23-3
MMUN2113LT1G	onsemi	Active	100	50	47	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	—	246	SOT-23-3
MMUN2113LT3G	onsemi	Active	100	50	47	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	—	246	SOT-23-3

Engineering Selection Recommendations

Primary Substitutes (Matched Resistor Configuration):

For direct replacement with identical internal biasing networks, the following active parts are recommended:

DDTA143ZCA-7-F (Diodes Incorporated) — Active status, 111,300 units in stock. Matches R1 = 4.7 kOhms and R2 = 47 kOhms configuration. Transition frequency increased to 250 MHz. RoHS3 compliant.
DTA143ZCA-TP (Micro Commercial Co) — Active status, 1,040 units in stock. Matches R1 = 4.7 kOhms and R2 = 47 kOhms configuration. Transition frequency increased to 250 MHz. RoHS3 compliant.
DTA143ZKAT146 (Rohm Semiconductor) — Active status, 16,440 units in stock. Matches R1 = 4.7 kOhms and R2 = 47 kOhms configuration. Transition frequency increased to 250 MHz. RoHS3 compliant.

Secondary Substitutes (Alternative Resistor Configurations):

For applications where internal resistor values differ from the original specification, the following parts are available:

DDTA143TCA-7-F (Diodes Incorporated) — Active status, 2,020 units in stock. R1 = 4.7 kOhms, R2 not specified. Transition frequency 250 MHz. RoHS3 compliant.
DTA113ZKAT146 (Rohm Semiconductor) — Active status, 155,300 units in stock. R1 = 1 kOhms, R2 = 10 kOhms. Transition frequency 250 MHz. RoHS3 compliant.
DTA143EKAT146 (Rohm Semiconductor) — Active status, 227,300 units in stock. R1 = 4.7 kOhms, R2 = 4.7 kOhms. Transition frequency 250 MHz. RoHS3 compliant.
DTA143EKAT246 (Rohm Semiconductor) — Active status, 1,034 units in stock. R1 = 4.7 kOhms, R2 = 4.7 kOhms. Transition frequency 250 MHz. RoHS3 compliant.
DTB113ZKT146 (Rohm Semiconductor) — Active status, 89,100 units in stock. Higher collector current rating (500 mA). R1 = 1 kOhms, R2 = 10 kOhms. Transition frequency 200 MHz. RoHS3 compliant.
MMUN2113LT1G (onsemi) — Active status, 32,100 units in stock. R1 = 47 kOhms, R2 = 47 kOhms. Power rating 246 mW. RoHS3 compliant.
MMUN2113LT3G (onsemi) — Active status, 20,300 units in stock. R1 = 47 kOhms, R2 = 47 kOhms. Power rating 246 mW. RoHS3 compliant.

All substitute parts are RoHS3 compliant, REACH unaffected, and classified under ECCN EAR99. All maintain MSL 1 (Unlimited) moisture sensitivity rating.

Frequently Asked Questions (FAQ)

Q: Can DDTA143ZCA-7-F directly replace BCR166B6327HTLA1 without circuit modification?

A: Yes. DDTA143ZCA-7-F matches the critical parameters: PNP pre-biased configuration, 50 V breakdown voltage, 100 mA collector current, 200 mW power dissipation, SOT-23-3 package, and identical internal resistor values (R1 = 4.7 kOhms, R2 = 47 kOhms). The increased transition frequency (250 MHz vs. 160 MHz) provides improved performance margin.

Q: What is the difference between Group A and Group B substitute parts?

A: Group A parts (DDTA143ZCA-7-F, DTA143ZCA-TP, DTA143ZKAT146) feature identical internal resistor configurations (R1 = 4.7 kOhms, R2 = 47 kOhms) and are direct functional equivalents. Group B parts feature alternative resistor values that alter the internal biasing network and may require circuit evaluation to confirm compatibility with the original application.

Q: Why do some substitute parts have higher collector current ratings (e.g., DTB113ZKT146 at 500 mA)?

A: DTB113ZKT146 is a higher-current variant designed for applications requiring greater collector current capacity. While it meets the 100 mA minimum requirement of the BCR166B6327HTLA1, its 500 mA rating provides additional design margin for higher-power applications. The part remains compatible with circuits designed for 100 mA operation.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: What is the significance of the transition frequency difference (160 MHz vs. 250 MHz)?

A: The BCR166B6327HTLA1 operates at 160 MHz transition frequency. Most substitute parts operate at 250 MHz, indicating faster switching capability. This higher frequency does not create incompatibility; it provides improved performance margin for switching applications. Applications operating below 160 MHz are unaffected.

Q: Can MMUN2113LT1G or MMUN2113LT3G be used as substitutes despite different resistor values?

A: MMUN2113LT1G and MMUN2113LT3G feature R1 = 47 kOhms and R2 = 47 kOhms, differing from the original R1 = 4.7 kOhms and R2 = 47 kOhms configuration. These parts are functionally compatible with the core electrical specifications (50 V, 100 mA, 200 mW, SOT-23-3) but require circuit evaluation to confirm biasing network compatibility with the original application.

Q: What packaging options are available for substitute parts?

A: All substitute parts are available in SOT-23-3 (TO-236-3, SC-59) surface mount package, matching the original BCR166B6327HTLA1 package specification. Packaging options vary by supplier: some are supplied in Tape & Reel (TR), others in Cut Tape (CT) & Digi-Reel®.

Q: Is the BCR166B6327HTLA1 still available for purchase?

A: The BCR166B6327HTLA1 is classified as obsolete. However, 673 units remain in stock as new original inventory. For new designs and ongoing production, active substitute parts are recommended to ensure long-term supply chain continuity.

Q: How do I select between multiple substitute options?

A: Selection depends on application requirements: (1) For direct replacement without circuit modification, select Group A parts with matched resistor values (DDTA143ZCA-7-F, DTA143ZCA-TP, or DTA143ZKAT146). (2) For applications requiring higher collector current, select DTB113ZKT146. (3) For alternative biasing networks, evaluate Group B parts against circuit specifications. (4) Consider supplier availability and packaging requirements (Tape & Reel vs. Cut Tape).

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