BCR 148W H6433 Equivalent & Substitute Parts

Part Overview

The BCR 148W H6433 is a pre-biased NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies in the SOT-323 surface mount package. This component is designed for general-purpose switching and amplification applications requiring a 50 V collector-emitter breakdown voltage with 100 mA maximum collector current. The BCR 148W H6433 is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across critical parameters including voltage ratings, current specifications, and internal resistor configurations.

Substiute Parts

BCR 148W H6433
Infineon TechnologiesIn Stock: 883BCR 148W H6433 Datasheet
BCR 148W H6433
Current Part
DDTC113TUA-7-F
Diodes IncorporatedIn Stock: 17478DDTC113TUA-7-F Datasheet
DDTC113TUA-7-F
MFR Recommended
DDTC114TUA-7-F
Diodes IncorporatedIn Stock: 17112DDTC114TUA-7-F Datasheet
DDTC114TUA-7-F
MFR Recommended
DDTC115GUA-7-F
Diodes IncorporatedIn Stock: 3374DDTC115GUA-7-F Datasheet
DDTC115GUA-7-F
MFR Recommended
DDTC115TUA-7-F
Diodes IncorporatedIn Stock: 63010DDTC115TUA-7-F Datasheet
DDTC115TUA-7-F
MFR Recommended
DDTC123TUA-7-F
Diodes IncorporatedIn Stock: 129256DDTC123TUA-7-F Datasheet
DDTC123TUA-7-F
MFR Recommended
DDTC124GUA-7-F
Diodes IncorporatedIn Stock: 777DDTC124GUA-7-F Datasheet
DDTC124GUA-7-F
MFR Recommended
DDTC124TUA-7-F
Diodes IncorporatedIn Stock: 9397DDTC124TUA-7-F Datasheet
DDTC124TUA-7-F
MFR Recommended
DDTC143TUA-7-F
Diodes IncorporatedIn Stock: 65372DDTC143TUA-7-F Datasheet
DDTC143TUA-7-F
MFR Recommended
DDTC144EUA-7-F
Diodes IncorporatedIn Stock: 44324DDTC144EUA-7-F Datasheet
DDTC144EUA-7-F
MFR Recommended
DDTC144GUA-7-F
Diodes IncorporatedIn Stock: 3361DDTC144GUA-7-F Datasheet
DDTC144GUA-7-F
MFR Recommended
DDTC144TUA-7-F
Diodes IncorporatedIn Stock: 69469DDTC144TUA-7-F Datasheet
DDTC144TUA-7-F
MFR Recommended
DTC114EUAT106
Rohm SemiconductorIn Stock: 155301DTC114EUAT106 Datasheet
DTC114EUAT106
MFR Recommended
DTC115EUAT106
Rohm SemiconductorIn Stock: 38221DTC115EUAT106 Datasheet
DTC115EUAT106
MFR Recommended
DTC123EUAT106
Rohm SemiconductorIn Stock: 6495DTC123EUAT106 Datasheet
DTC123EUAT106
MFR Recommended
DTC124EUAT106
Rohm SemiconductorIn Stock: 344287DTC124EUAT106 Datasheet
DTC124EUAT106
MFR Recommended
DTC143EUAT106
Rohm SemiconductorIn Stock: 35471DTC143EUAT106 Datasheet
DTC143EUAT106
MFR Recommended
DTC144ECA-TP
Micro Commercial CoIn Stock: 1041DTC144ECA-TP Datasheet
DTC144ECA-TP
MFR Recommended
DTC144EUAT106
Rohm SemiconductorIn Stock: 60667DTC144EUAT106 Datasheet
DTC144EUAT106
MFR Recommended
MMUN2212LT1G
onsemiIn Stock: 1524MMUN2212LT1G Datasheet
MMUN2212LT1G
MFR Recommended
MMUN2213LT1G
onsemiIn Stock: 104202MMUN2213LT1G Datasheet
MMUN2213LT1G
MFR Recommended
MUN2213T1G
onsemiIn Stock: 59120MUN2213T1G Datasheet
MUN2213T1G
MFR Recommended
MUN5213T1G
onsemiIn Stock: 12306MUN5213T1G Datasheet
MUN5213T1G
MFR Recommended
NSVMMUN2212LT1G
onsemiIn Stock: 95337NSVMMUN2212LT1G Datasheet
NSVMMUN2212LT1G
MFR Recommended
PDTC144EM,315
Nexperia USA Inc.In Stock: 831PDTC144EM,315 Datasheet
PDTC144EM,315
MFR Recommended
PDTC144EMB,315
Nexperia USA Inc.In Stock: 10089PDTC144EMB,315 Datasheet
PDTC144EMB,315
MFR Recommended
PDTC144EU,115
Nexperia USA Inc.In Stock: 88399PDTC144EU,115 Datasheet
PDTC144EU,115
MFR Recommended
PDTC144WU,115
NXP USA Inc.In Stock: 43209PDTC144WU,115 Datasheet
PDTC144WU,115
MFR Recommended
RN1404S,LF
Toshiba Semiconductor and StorageIn Stock: 117387RN1404S,LF Datasheet
RN1404S,LF
MFR Recommended
SMMUN2213LT3G
onsemiIn Stock: 29140SMMUN2213LT3G Datasheet
SMMUN2213LT3G
MFR Recommended
SMUN2213T1G
onsemiIn Stock: 766SMUN2213T1G Datasheet
SMUN2213T1G
MFR Recommended

Key Parameters

Parameter BCR 148W H6433 Unit
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) Max 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) Min @ Ic, Vce 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300 @ 500µA, 10mA mV
Current - Collector Cutoff (Max) 100 nA
Frequency - Transition 100 MHz
Power - Max 250 mW
Package / Case SC-70, SOT-323
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the BCR 148W H6433 is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

  • Transistor type: NPN pre-biased configuration
  • Collector-emitter breakdown voltage: 50 V maximum
  • Maximum collector current: 100 mA
  • Package type: SOT-323 surface mount
  • Internal resistor network configuration (R1 and R2 values)

Acceptable Variation Parameters:

  • Transition frequency: Substitute parts may exceed the original 100 MHz specification
  • Power dissipation: Substitute parts may have lower maximum power ratings if application requirements are met
  • DC current gain (hFE): Variations within the pre-biased design are acceptable if saturation voltage and resistor network maintain circuit function
  • Collector cutoff current (ICBO): Substitute parts may have lower leakage current specifications

The BCR 148W H6433 contains internal resistors R1 = 47 kOhms and R2 = 47 kOhms. Substitute parts are grouped by their internal resistor configurations, as these directly determine biasing behavior and circuit compatibility. Parts with identical R1 and R2 values provide direct functional equivalence. Parts with different resistor values require circuit-level evaluation but remain electrically compatible within the SOT-323 package and voltage/current specifications.

Parameter Comparison

Part Number Manufacturer Ic Max (mA) Vce Breakdown (V) R1 (kOhms) R2 (kOhms) hFE Min @ Ic, Vce Vce Sat Max (mV) Frequency (MHz) Power Max (mW) Product Status
BCR 148W H6433 Infineon 100 50 47 47 70 @ 5mA, 5V 300 @ 500µA, 10mA 100 250 Obsolete
DDTC113TUA-7-F Diodes Inc. 100 50 1 100 @ 1mA, 5V 300 @ 1mA, 10mA 250 200 Active
DDTC114TUA-7-F Diodes Inc. 100 50 10 100 @ 1mA, 5V 300 @ 100µA, 1mA 250 200 Active
DDTC115GUA-7-F Diodes Inc. 100 50 100 82 @ 5mA, 5V 300 @ 500µA, 10mA 250 200 Active
DDTC115TUA-7-F Diodes Inc. 100 50 100 100 @ 1mA, 5V 300 @ 100µA, 1mA 250 200 Active
DDTC123TUA-7-F Diodes Inc. 100 50 2.2 100 @ 1mA, 5V 300 @ 500µA, 5mA 250 200 Active
DDTC124GUA-7-F Diodes Inc. 100 50 22 56 @ 5mA, 5V 300 @ 500µA, 10mA 250 200 Active
DDTC124TUA-7-F Diodes Inc. 100 50 22 100 @ 1mA, 5V 300 @ 500µA, 5mA 250 200 Active
DDTC143TUA-7-F Diodes Inc. 100 50 4.7 100 @ 1mA, 5V 300 @ 250µA, 2.5mA 250 200 Active
DDTC144EUA-7-F Diodes Inc. 100 50 47 47 68 @ 5mA, 5V 300 @ 500µA, 10mA 250 200 Active
DDTC144GUA-7-F Diodes Inc. 100 50 47 68 @ 5mA, 5V 300 @ 500µA, 10mA 250 200 Active

Engineering Selection Recommendations

Direct Functional Equivalent:

The DDTC144EUA-7-F provides the closest functional equivalence to the BCR 148W H6433. Both parts contain identical internal resistor networks (R1 = 47 kOhms, R2 = 47 kOhms) and maintain equivalent saturation voltage characteristics at the specified bias conditions. The DDTC144EUA-7-F is manufactured by Diodes Incorporated with active product status and RoHS3 compliance. The transition frequency is increased to 250 MHz, and maximum power dissipation is reduced to 200 mW; both specifications remain suitable for applications originally designed for the BCR 148W H6433. This part is recommended for direct replacement in existing circuit designs.

Alternative Selections by Resistor Configuration:

For applications where the internal resistor network can be modified or where alternative biasing is acceptable, the following active parts from Diodes Incorporated provide equivalent electrical performance within the SOT-323 package:

  • DDTC115TUA-7-F: R1 = 100 kOhms configuration for reduced base current applications
  • DDTC124TUA-7-F: R1 = 22 kOhms configuration for increased base current sensitivity
  • DDTC143TUA-7-F: R1 = 4.7 kOhms configuration for high-speed switching applications

All substitute parts maintain the 50 V collector-emitter breakdown voltage, 100 mA maximum collector current, and SOT-323 surface mount package. All substitute parts are manufactured by Diodes Incorporated with active product status and RoHS3 compliance certification.

Frequently Asked Questions (FAQ)

Q: Can DDTC144EUA-7-F be used as a direct replacement for BCR 148W H6433?

A: Yes. The DDTC144EUA-7-F contains identical internal resistor values (R1 = 47 kOhms, R2 = 47 kOhms) and maintains equivalent saturation voltage performance. Both parts are housed in the SOT-323 package with identical pinout. The increased transition frequency (250 MHz vs. 100 MHz) and reduced power rating (200 mW vs. 250 mW) do not affect compatibility in applications designed for the BCR 148W H6433.

Q: What is the significance of the internal resistor values (R1 and R2)?

A: The internal resistor network in pre-biased BJTs determines the base bias current and switching characteristics. R1 (base resistor) controls the base current magnitude, while R2 (emitter-base resistor) affects the bias stability. Parts with identical R1 and R2 values produce identical biasing behavior. Parts with different resistor values will exhibit different base current requirements and switching speeds, requiring circuit-level evaluation for compatibility.

Q: Are all substitute parts available in the same package?

A: Yes. All substitute parts listed are manufactured in the SOT-323 surface mount package with identical pinout and footprint compatibility. No PCB layout modifications are required for mechanical substitution.

Q: What compliance certifications apply to the substitute parts?

A: All Diodes Incorporated substitute parts listed are RoHS3 compliant and REACH unaffected. Moisture sensitivity level is MSL 1 (unlimited) for all parts, matching the original BCR 148W H6433 specification.

Q: Why is the BCR 148W H6433 classified as obsolete?

A: The BCR 148W H6433 is no longer in active production. Diodes Incorporated DDTC series pre-biased transistors provide equivalent or superior electrical performance with active manufacturing status and improved availability.

Q: Can substitute parts with different R1 values be used interchangeably?

A: Substitution of parts with different R1 values requires circuit-level analysis. The base resistor value directly affects the bias current and switching speed. Parts with lower R1 values (e.g., DDTC113TUA-7-F with R1 = 1 kOhm) will draw higher base current, while parts with higher R1 values (e.g., DDTC115TUA-7-F with R1 = 100 kOhm) will draw lower base current. Application-specific evaluation is necessary to confirm functional compatibility.

Q: What is the difference between DDTC144EUA-7-F and DDTC144GUA-7-F?

A: DDTC144EUA-7-F contains both R1 and R2 resistors (47 kOhms each), providing a complete pre-biased configuration. DDTC144GUA-7-F contains only the R2 resistor (47 kOhms), designated as an R2-only series variant. For direct replacement of BCR 148W H6433, the DDTC144EUA-7-F is the appropriate selection.

Q: Are there inventory considerations for substitute part selection?

A: Inventory availability varies among substitute parts. DDTC123TUA-7-F has the highest inventory level (129,180 pcs), while DDTC124GUA-7-F has the lowest (699 pcs). For production applications requiring sustained supply, parts with higher inventory levels provide greater availability assurance.

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