BCR142E6327HTSA1 Equivalent & Substitute Parts

Part Overview

The BCR142E6327HTSA1 is a pre-biased NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies, designed for surface mount applications in the SOT-23-3 package. This device integrates internal base and emitter resistors, enabling simplified circuit design for switching and amplification applications. The part operates at a maximum collector-emitter breakdown voltage of 50 V with a maximum collector current of 100 mA and transition frequency of 150 MHz.

The BCR142E6327HTSA1 is currently in Last Time Buy status, indicating that Infineon has discontinued or will discontinue production. This necessitates identification of functionally equivalent substitute components from active manufacturers to ensure design continuity and supply chain reliability.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN - Pre-Biased	—
Maximum Collector Current (Ic)	100	mA
Collector-Emitter Breakdown Voltage (V(BR)CEO)	50	V
Base Resistor (R1)	22	kΩ
Emitter-Base Resistor (R2)	47	kΩ
DC Current Gain (hFE) @ Ic, Vce	70 @ 5mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA	—
Transition Frequency (fT)	150	MHz
Maximum Power Dissipation	200	mW
Package Type	SOT-23-3 (TO-236-3, SC-59)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the BCR142E6327HTSA1 is determined by strict equivalence in the following critical parameters:

Primary Substitution Criteria:

Transistor type: NPN pre-biased configuration
Package: SOT-23-3 (TO-236-3, SC-59) surface mount
Maximum collector current: 100 mA minimum
Collector-emitter breakdown voltage: 50 V minimum
Base resistor (R1): 22 kΩ (exact match required for circuit biasing)
Emitter-base resistor (R2): 47 kΩ (exact match required for circuit biasing)
Maximum power dissipation: 200 mW minimum
RoHS3 compliance and MSL 1 rating

Secondary Compatibility Parameters:

DC current gain (hFE): Range 68–100 @ specified test conditions
Vce saturation: 150–300 mV @ specified test conditions
Transition frequency: 150 MHz minimum
Collector cutoff current (ICBO): ≤500 nA

Substitute parts are grouped into two categories:

Category A – Direct Electrical Equivalents (Identical R1/R2 Values): Parts with R1 = 22 kΩ and R2 = 47 kΩ provide pin-for-pin functional equivalence with no circuit modifications required.

Category B – Functional Alternatives (Different R1/R2 Values): Parts with modified internal resistor networks (R1 ≠ 22 kΩ or R2 ≠ 47 kΩ) require circuit evaluation and may necessitate external component adjustments to maintain original circuit performance.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	V(BR)CEO (Max) V	R1 (kΩ)	R2 (kΩ)	hFE @ Test Condition	Vce Sat (Max) mV	fT (MHz)	P (Max) mW	Status
BCR142E6327HTSA1	Infineon	100	50	22	47	70 @ 5mA, 5V	300 @ 500µA, 10mA	150	200	Last Time Buy
DDTC124XCA-7-F	Diodes Inc.	100	50	22	47	68 @ 5mA, 5V	300 @ 500µA, 10mA	250	200	Active
PDTC124TT,215	Nexperia	100	50	22	—	100 @ 1mA, 5V	150 @ 500µA, 10mA	—	250	Active (AEC-Q100)
DDTC124TCA-7-F	Diodes Inc.	100	50	22	—	100 @ 1mA, 5V	300 @ 500µA, 5mA	250	200	Active
DTC124XKAT146	Rohm	50	50	22	47	68 @ 5mA, 5V	300 @ 500µA, 10mA	250	200	Active
DTC143XKAT146	Rohm	100	50	4.7	10	30 @ 10mA, 5V	300 @ 500µA, 10mA	250	200	Active
MMUN2212LT1G	onsemi	100	50	22	22	60 @ 5mA, 10V	250 @ 300µA, 10mA	—	246	Active
MMUN2214LT1G	onsemi	100	50	10	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	—	246	Active
MMUN2216LT1G	onsemi	100	50	4.7	—	160 @ 5mA, 10V	250 @ 1mA, 10mA	—	400	Active
MMUN2234LT1G	onsemi	100	50	22	47	80 @ 5mA, 10V	250 @ 1mA, 10mA	—	246	Active
MMUN2238LT1G	onsemi	100	50	2.2	—	160 @ 5mA, 10V	250 @ 1mA, 10mA	—	246	Active

Engineering Selection Recommendations

Direct Substitutes (No Circuit Modification Required):

The following parts maintain identical internal resistor networks (R1 = 22 kΩ, R2 = 47 kΩ) and are suitable for direct replacement in existing designs:

DDTC124XCA-7-F (Diodes Incorporated): Active product status with 250 MHz transition frequency, exceeding the original 150 MHz specification. Electrical parameters within acceptable tolerance ranges. RoHS3 compliant, MSL 1.
MMUN2234LT1G (onsemi): Active product with identical resistor configuration. Offers improved DC current gain (80 vs. 70) and lower saturation voltage (250 mV vs. 300 mV). RoHS3 compliant, MSL 1. High inventory availability (33,400 units).

Functionally Compatible Substitutes (Circuit Evaluation Required):

The following parts provide equivalent electrical performance but with modified internal resistor networks. Application-specific circuit analysis is required to determine suitability:

PDTC124TT,215 (Nexperia): Active product with AEC-Q100 automotive qualification. Increased power rating (250 mW vs. 200 mW). Modified hFE characteristics (100 @ 1mA vs. 70 @ 5mA) and improved saturation voltage (150 mV). Suitable for automotive applications requiring higher reliability qualification.
DDTC124TCA-7-F (Diodes Incorporated): Active product with 250 MHz transition frequency. Increased power rating (200 mW maintained). Higher DC current gain (100 @ 1mA). Largest inventory availability (32,529 units).
MMUN2214LT1G (onsemi): Active product with modified base resistor (10 kΩ vs. 22 kΩ). Maintains 47 kΩ emitter-base resistor. Improved DC current gain (80 @ 5mA). Suitable for applications where higher base drive is acceptable.

Limited Current Applications:

DTC124XKAT146 (Rohm): Active product with identical resistor configuration but reduced maximum collector current (50 mA vs. 100 mA). Suitable only for applications with collector current ≤50 mA.

Not Recommended for Direct Substitution:

DTC143XKAT146 (Rohm): Significantly different internal resistor network (R1 = 4.7 kΩ, R2 = 10 kΩ) and reduced DC current gain (30 @ 10mA). Requires substantial circuit redesign.
MMUN2216LT1G (onsemi): Significantly different base resistor (4.7 kΩ) and higher DC current gain (160 @ 5mA). Requires circuit evaluation and potential external component modifications.
MMUN2238LT1G (onsemi): Significantly different base resistor (2.2 kΩ) and higher DC current gain (160 @ 5mA). Requires circuit evaluation and potential external component modifications.

Frequently Asked Questions (FAQ)

Q1: Can MMUN2234LT1G be used as a direct replacement for BCR142E6327HTSA1?

A: Yes. MMUN2234LT1G maintains identical internal resistor values (R1 = 22 kΩ, R2 = 47 kΩ), identical package (SOT-23-3), and equivalent electrical performance. The part is in active production status with high inventory availability. No circuit modifications are required.

Q2: What is the difference between Category A and Category B substitutes?

A: Category A substitutes (DDTC124XCA-7-F, MMUN2234LT1G) have identical internal base and emitter-base resistor values (22 kΩ and 47 kΩ) and provide pin-for-pin functional equivalence. Category B substitutes have different resistor values and require circuit evaluation to confirm compatibility with the original design intent.

Q3: Why does PDTC124TT,215 have a lower saturation voltage (150 mV) compared to the original part (300 mV)?

A: Saturation voltage is determined by the transistor's internal structure and doping profile. PDTC124TT,215 exhibits improved saturation characteristics, which may result in lower power dissipation in switching applications. This is a beneficial characteristic and does not prevent substitution.

Q4: Is the increased transition frequency (250 MHz) in substitute parts a concern?

A: No. Higher transition frequency indicates improved high-frequency performance and is not detrimental to applications designed for 150 MHz operation. The substitute parts will function correctly in all applications where the original 150 MHz part was specified.

Q5: Can DTC124XKAT146 be used in applications requiring 100 mA collector current?

A: No. DTC124XKAT146 has a maximum collector current rating of 50 mA, which is insufficient for applications requiring 100 mA. This part is suitable only for applications with collector current ≤50 mA.

Q6: What does "Last Time Buy" status mean for the BCR142E6327HTSA1?

A: Last Time Buy indicates that Infineon has announced discontinuation of this part. Existing inventory may be available for a limited time, but long-term supply cannot be guaranteed. Designers should transition to active substitute parts to ensure supply chain continuity.

Q7: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this document are RoHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the environmental compliance profile of the original BCR142E6327HTSA1.

Q8: Which substitute part has the highest inventory availability?

A: MMUN2214LT1G (onsemi) has the highest inventory availability at 1,004,100 units, followed by DTC143XKAT146 (Rohm) at 2,405,200 units. However, DTC143XKAT146 has significantly different internal resistor values and is not recommended for direct substitution.

Q9: Can substitute parts with different hFE values affect circuit performance?

A: DC current gain (hFE) variations within the specified ranges (68–100 @ test conditions) are acceptable for pre-biased transistor applications because the internal resistor network provides bias stabilization. However, applications with critical gain-dependent performance should be evaluated on a case-by-case basis.

Q10: What packaging options are available for substitute parts?

A: All substitute parts are available in SOT-23-3 (TO-236-3, SC-59) surface mount package, matching the original BCR142E6327HTSA1. Packaging options include Cut Tape (CT), Tape & Reel (TR), and Digi-Reel® formats depending on the manufacturer and part number.

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