BCR133SB6327XT Equivalent & Substitute Parts

Part Overview

The BCR133SB6327XT is a pre-biased dual NPN bipolar transistor (BJT) manufactured by Infineon Technologies in a 6-pin SOT-363 surface mount package. This component integrates two NPN transistors with internal base bias resistors, designed for switching and amplification applications requiring compact form factors and integrated biasing networks.

The BCR133SB6327XT is currently discontinued at DiGi Electronics. Equivalent substitute parts are available from active manufacturers including Nexperia USA Inc., Diodes Incorporated, and onsemi, offering compatible electrical and mechanical specifications with continued product support and availability.

Substiute Parts

BCR133SB6327XT
Infineon TechnologiesIn Stock: 1144BCR133SB6327XT Datasheet
BCR133SB6327XT
Current Part
PUMH11,115
Nexperia USA Inc.In Stock: 6316PUMH11,115 Datasheet
PUMH11,115
Direct
DDC113TU-7-F
Diodes IncorporatedIn Stock: 69224DDC113TU-7-F Datasheet
DDC113TU-7-F
MFR Recommended
DDC114EU-7-F
Diodes IncorporatedIn Stock: 10152DDC114EU-7-F Datasheet
DDC114EU-7-F
MFR Recommended
DDC114TU-7-F
Diodes IncorporatedIn Stock: 10232DDC114TU-7-F Datasheet
DDC114TU-7-F
MFR Recommended
DDC143TU-7-F
Diodes IncorporatedIn Stock: 8770DDC143TU-7-F Datasheet
DDC143TU-7-F
MFR Recommended
MUN5211DW1T1G
onsemiIn Stock: 1000217MUN5211DW1T1G Datasheet
MUN5211DW1T1G
MFR Recommended
MUN5212DW1T1G
onsemiIn Stock: 96926MUN5212DW1T1G Datasheet
MUN5212DW1T1G
MFR Recommended
MUN5213DW1T1G
onsemiIn Stock: 3753MUN5213DW1T1G Datasheet
MUN5213DW1T1G
MFR Recommended
MUN5214DW1T1G
onsemiIn Stock: 513794MUN5214DW1T1G Datasheet
MUN5214DW1T1G
MFR Recommended
MUN5215DW1T1G
onsemiIn Stock: 210379MUN5215DW1T1G Datasheet
MUN5215DW1T1G
MFR Recommended
MUN5216DW1T1G
onsemiIn Stock: 73342MUN5216DW1T1G Datasheet
MUN5216DW1T1G
MFR Recommended
MUN5230DW1T1G
onsemiIn Stock: 33122MUN5230DW1T1G Datasheet
MUN5230DW1T1G
MFR Recommended
MUN5232DW1T1G
onsemiIn Stock: 24174MUN5232DW1T1G Datasheet
MUN5232DW1T1G
MFR Recommended
MUN5233DW1T1G
onsemiIn Stock: 810353MUN5233DW1T1G Datasheet
MUN5233DW1T1G
MFR Recommended
MUN5235DW1T1G
onsemiIn Stock: 100375MUN5235DW1T1G Datasheet
MUN5235DW1T1G
MFR Recommended
PUMH14,115
Nexperia USA Inc.In Stock: 3931PUMH14,115 Datasheet
PUMH14,115
MFR Recommended
UMH11NTN
Rohm SemiconductorIn Stock: 44170UMH11NTN Datasheet
UMH11NTN
MFR Recommended
UMH2N-TP
Micro Commercial CoIn Stock: 3835UMH2N-TP Datasheet
UMH2N-TP
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) Max 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) Min @ Ic, Vce 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300 @ 500µA, 10mA mV
Frequency - Transition 130 MHz
Power - Max 250 mW
Package / Case 6-VSSOP, SC-88, SOT-363
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution compatibility for the BCR133SB6327XT is determined by the following critical parameters:

Primary Compatibility Criteria:

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) Max: 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Package / Case: SOT-363 or equivalent (6-TSSOP, SC-88)
  • Mounting Type: Surface Mount
  • Base Resistor (R1): 10 kOhms (primary specification)
  • Emitter Base Resistor (R2): 10 kOhms (primary specification)

Secondary Compatibility Considerations:

  • DC Current Gain (hFE) Min: 30 or higher at specified test conditions
  • Vce Saturation: 300 mV or lower at specified test conditions
  • Power Dissipation: 250 mW or higher
  • Regulatory Compliance: ROHS3 Compliant, MSL 1

Substitute parts are grouped into two categories based on internal resistor configuration:

Category A - Exact Resistor Match (R1=10kΩ, R2=10kΩ):

  • PUMH11,115 (Nexperia)
  • DDC114EU-7-F (Diodes Incorporated)
  • DDC114TU-7-F (Diodes Incorporated)
  • MUN5211DW1T1G (onsemi)

Category B - Alternative Resistor Configurations (R1 or R2 differs):

  • DDC113TU-7-F (R1=1kΩ, R2 not specified)
  • DDC143TU-7-F (R1=4.7kΩ, R2 not specified)
  • MUN5212DW1T1G (R1=22kΩ, R2=22kΩ)
  • MUN5213DW1T1G (R1=47kΩ, R2=47kΩ)
  • MUN5214DW1T1G (R1=10kΩ, R2=47kΩ)
  • MUN5215DW1T1G (R1=10kΩ, R2 not specified)

Parameter Comparison

Part Number Manufacturer Ic Max (mA) Vce Breakdown (V) R1 (kΩ) R2 (kΩ) hFE Min @ Test Vce Sat Max (mV) Power Max (mW) Frequency (MHz) Product Status
BCR133SB6327XT Infineon 100 50 10 10 30 @ 5mA, 5V 300 @ 500µA, 10mA 250 130 Discontinued
PUMH11,115 Nexperia 100 50 10 10 30 @ 5mA, 5V 150 @ 500µA, 10mA 300 Active
DDC113TU-7-F Diodes Inc. 100 50 1 100 @ 1mA, 5V 300 @ 1mA, 10mA 200 250 Active
DDC114EU-7-F Diodes Inc. 100 50 10 10 30 @ 5mA, 5V 300 @ 500µA, 10mA 200 250 Active
DDC114TU-7-F Diodes Inc. 100 50 10 100 @ 1mA, 5V 300 @ 100µA, 1mA 200 250 Active
DDC143TU-7-F Diodes Inc. 100 50 4.7 100 @ 1mA, 5V 300 @ 250µA, 2.5mA 200 250 Active
MUN5211DW1T1G onsemi 100 50 10 10 35 @ 5mA, 10V 250 @ 300µA, 10mA 250 Active
MUN5212DW1T1G onsemi 100 50 22 22 60 @ 5mA, 10V 250 @ 300µA, 10mA 250 Active
MUN5213DW1T1G onsemi 100 50 47 47 80 @ 5mA, 10V 250 @ 300µA, 10mA 250 Active
MUN5214DW1T1G onsemi 100 50 10 47 80 @ 5mA, 10V 250 @ 300µA, 10mA 250 Active
MUN5215DW1T1G onsemi 100 50 10 160 @ 5mA, 10V 250 @ 1mA, 10mA 250 Active

Engineering Selection Recommendations

Direct Replacement (Highest Compatibility):

For applications requiring exact electrical and mechanical compatibility with the BCR133SB6327XT, select from Category A substitutes:

  • PUMH11,115 (Nexperia USA Inc.): Identical resistor configuration (R1=10kΩ, R2=10kΩ), matching DC current gain specification, improved Vce saturation performance (150 mV vs. 300 mV), higher power rating (300 mW vs. 250 mW). Active product status with high inventory availability (6300 pcs).

  • DDC114EU-7-F (Diodes Incorporated): Exact parameter match including resistor values and DC current gain. Tape & Reel packaging. Active status with 10100 pcs inventory.

  • MUN5211DW1T1G (onsemi): Identical resistor configuration with slightly higher DC current gain (35 vs. 30 @ 5mA, 10V). Improved Vce saturation (250 mV vs. 300 mV). Highest inventory availability (1,000,200 pcs). Active product status.

Alternative Substitutes (Application-Dependent Selection):

For applications where internal resistor values differ from the original specification, alternative parts offer different biasing characteristics:

  • DDC114TU-7-F (Diodes Incorporated): R2 not specified; higher DC current gain (100 vs. 30). Suitable for applications requiring higher gain performance. Active status.

  • MUN5212DW1T1G through MUN5215DW1T1G (onsemi): Varying resistor configurations (R1 and R2 values from 10 kΩ to 47 kΩ) provide different biasing networks for specific circuit requirements. All active products with substantial inventory.

Regulatory and Compliance Considerations:

All substitute parts maintain ROHS3 compliance and MSL 1 rating, ensuring compatibility with standard manufacturing and storage requirements. All parts are classified under ECCN EAR99 and HTSUS 8541.21.0095 or 8541.21.0075, consistent with the original component's export and tariff classification.

Frequently Asked Questions (FAQ)

Q1: Can PUMH11,115 be used as a direct replacement for BCR133SB6327XT?

A: Yes. PUMH11,115 provides direct electrical and mechanical compatibility. Both components feature identical internal resistor values (R1=10kΩ, R2=10kΩ), matching DC current gain specifications (30 @ 5mA, 5V), and SOT-363 packaging. PUMH11,115 offers improved Vce saturation performance (150 mV vs. 300 mV) and higher power dissipation capability (300 mW vs. 250 mW), making it a superior substitute for the discontinued BCR133SB6327XT.

Q2: What is the difference between Category A and Category B substitute parts?

A: Category A parts (PUMH11,115, DDC114EU-7-F, DDC114TU-7-F, MUN5211DW1T1G) maintain the original BCR133SB6327XT internal resistor configuration of R1=10kΩ and R2=10kΩ, ensuring identical biasing behavior. Category B parts feature alternative resistor values (ranging from 1 kΩ to 47 kΩ for R1 and R2), which alter the internal biasing network and are suitable only for applications where different biasing characteristics are acceptable or required.

Q3: Are all substitute parts available in the same package as BCR133SB6327XT?

A: Yes. All listed substitute parts are available in SOT-363 surface mount packaging (also designated as 6-TSSOP or SC-88). This ensures mechanical and thermal compatibility with existing PCB layouts and assembly processes. Verify specific supplier device package designations during procurement to confirm exact package specifications.

Q4: What is the significance of the Vce saturation difference between BCR133SB6327XT and PUMH11,115?

A: PUMH11,115 exhibits lower Vce saturation (150 mV @ 500µA, 10mA) compared to BCR133SB6327XT (300 mV @ 500µA, 10mA). Lower saturation voltage indicates improved switching efficiency and reduced power dissipation during transistor saturation. This characteristic is beneficial for switching applications and does not negatively impact compatibility; it represents an enhancement over the original component.

Q5: Can DDC113TU-7-F substitute for BCR133SB6327XT in all applications?

A: DDC113TU-7-F is not a direct replacement. While it maintains the same collector current (100 mA) and breakdown voltage (50 V) specifications, it features a significantly different internal resistor configuration (R1=1kΩ vs. R1=10kΩ) and higher DC current gain (100 vs. 30 @ 1mA, 5V). This part is suitable only for applications where the alternative biasing network and higher gain characteristics are compatible with circuit design requirements.

Q6: What packaging options are available for substitute parts?

A: Substitute parts are available in multiple packaging formats: Tape & Reel (TR), Cut Tape (CT) & Digi-Reel®, and standard packaging. Selection depends on manufacturing volume and assembly requirements. All packaging options maintain the SOT-363 surface mount form factor. Verify packaging designation during procurement to ensure compatibility with automated assembly equipment.

Q7: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating. This ensures compatibility with standard manufacturing processes, storage conditions, and regulatory requirements for electronic components in consumer and industrial applications.

Q8: Which substitute part offers the highest inventory availability?

A: MUN5211DW1T1G (onsemi) offers the highest inventory availability with 1,000,200 pcs in stock. This part provides exact resistor configuration matching (R1=10kΩ, R2=10kΩ) and is suitable for direct replacement applications requiring immediate availability and long-term supply assurance.

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