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BCR08PNE6433HTMA1 Equivalent & Substitute Parts
Part Overview
The BCR08PNE6433HTMA1 is a pre-biased dual transistor (1 NPN, 1 PNP) manufactured by Infineon Technologies in SOT-363 surface mount package. This component integrates two complementary transistors with internal biasing resistors, designed for switching and amplification applications requiring compact form factors.
The BCR08PNE6433HTMA1 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Substitute components must maintain electrical compatibility across critical parameters including collector current, breakdown voltage, saturation characteristics, and package form factor.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | — |
| Current - Collector (Ic) Max | 100 | mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 | V |
| Resistor - Base (R1) | 2.2 | kOhms |
| Resistor - Emitter Base (R2) | 47 | kOhms |
| DC Current Gain (hFE) Min @ Ic, Vce | 70 @ 5mA, 5V | — |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | — |
| Frequency - Transition | 170 | MHz |
| Power - Max | 250 | mW |
| Package / Case | 6-VSSOP, SC-88, SOT-363 | — |
| Mounting Type | Surface Mount | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitute parts for the BCR08PNE6433HTMA1 are selected based on strict electrical and mechanical compatibility. The following critical parameters determine substitution eligibility:
Primary Compatibility Criteria:
- Transistor configuration: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Maximum collector current: 100 mA
- Collector-emitter breakdown voltage: 50 V
- Base resistor (R1): 2.2 kOhms
- Emitter-base resistor (R2): 47 kOhms
- Package type: SOT-363 (6-pin surface mount)
Secondary Compatibility Criteria:
- DC current gain (hFE) minimum: 70 or higher
- Vce saturation: 300 mV or lower
- Power dissipation: 250 mW or higher
- Moisture sensitivity: MSL 1 (Unlimited)
Substitute parts are grouped into two categories:
Category A - Direct Electrical Equivalents (1 NPN, 1 PNP Configuration): These parts maintain identical transistor configuration and internal resistor values, ensuring pin-for-pin compatibility and functional equivalence.
Category B - Functional Alternatives (Different Transistor Configuration): These parts feature different internal configurations (2 NPN instead of 1 NPN/1 PNP) but maintain compatible electrical parameters for applications requiring only one transistor type.
Parameter Comparison
| Part Number | Manufacturer | Transistor Type | Ic Max (mA) | Vce Breakdown (V) | R1 (kOhms) | R2 (kOhms) | hFE Min @ Ic, Vce | Vce Sat Max (mV) | Power Max (mW) | Package | Status |
|---|---|---|---|---|---|---|---|---|---|---|---|
| BCR08PNE6433HTMA1 | Infineon | 1 NPN, 1 PNP | 100 | 50 | 2.2 | 47 | 70 @ 5mA, 5V | 300 @ 500µA, 10mA | 250 | SOT-363 | Obsolete |
| SMUN5335DW1T1G | onsemi | 1 NPN, 1 PNP | 100 | 50 | 2.2 | 47 | 80 @ 5mA, 10V | 250 @ 300µA, 10mA | 187 | SOT-363 | Active |
| DCX123JU-7-F | Diodes Inc. | 1 NPN, 1 PNP | 100 | 50 | 2.2 | 47 | 80 @ 10mA, 5V | 300 @ 250µA, 5mA | 200 | SOT-363 | Active |
| DCX123JUQ-7-F | Diodes Inc. | 1 NPN, 1 PNP | 100 | 50 | 2.2 | 47 | 80 @ 10mA, 5V | 300 @ 250µA, 5mA | 200 | SOT-363 | Active |
| MUN5235DW1T1G | onsemi | 2 NPN | 100 | 50 | 2.2 | 47 | 80 @ 5mA, 10V | 250 @ 300µA, 10mA | 250 | SOT-363 | Active |
| MUN5335DW1T1G | onsemi | 1 NPN, 1 PNP | 100 | 50 | 2.2 | 47 | 80 @ 5mA, 10V | 250 @ 300µA, 10mA | 250 | SOT-363 | Active |
| NSVMUN5235DW1T1G | onsemi | 2 NPN | 100 | 50 | 2.2 | 47 | 80 @ 5mA, 10V | 250 @ 1mA, 10mA | 385 | SOT-363 | Active |
| PUMD10,115 | Nexperia | 1 NPN, 1 PNP | 100 | 50 | 2.2 | 47 | 100 @ 10mA, 5V | 100 @ 250µA, 5mA | 300 | 6-TSSOP | Active |
| PUMD10,125 | Nexperia | 1 NPN, 1 PNP | 100 | 50 | 2.2 | 47 | 100 @ 10mA, 5V | 100 @ 250µA, 5mA | 200 | 6-TSSOP | Active |
| PUMD24,115 | Nexperia | 1 NPN, 1 PNP | 20 | 50 | 100 | 100 | 80 @ 5mA, 5V | 150 @ 250µA, 5mA | 300 | 6-TSSOP | Active |
| PUMD48,115 | Nexperia | 1 NPN, 1 PNP | 100 | 50 | 47, 2.2 | 47 | 80 @ 5mA, 5V / 100 @ 10mA, 5V | 150 @ 500µA, 10mA / 100 @ 250µA, 5mA | 300 | 6-TSSOP | Active |
Engineering Selection Recommendations
Tier 1 - Direct Equivalents (Recommended Primary Substitutes):
MUN5335DW1T1G (onsemi) and DCX123JUQ-7-F (Diodes Incorporated) are the primary recommended substitutes. Both maintain identical transistor configuration (1 NPN, 1 PNP), matching internal resistor values (R1: 2.2 kOhms, R2: 47 kOhms), and SOT-363 package compatibility. Both parts are in active production status with AEC-Q101 automotive qualification, ensuring long-term availability and reliability. MUN5335DW1T1G offers improved saturation characteristics (250 mV vs. 300 mV) and higher DC current gain (80 vs. 70). DCX123JUQ-7-F provides superior transition frequency (250 MHz vs. 170 MHz).
Tier 2 - Compatible Alternatives (Secondary Substitutes):
SMUN5335DW1T1G (onsemi) provides direct electrical equivalence with automotive qualification (AEC-Q101) and active status. PUMD10,115 and PUMD10,125 (Nexperia) maintain identical electrical parameters but use 6-TSSOP package instead of SOT-363. These require PCB layout modification but offer superior saturation performance (100 mV vs. 300 mV) and higher DC current gain (100 vs. 70).
Tier 3 - Functional Alternatives (Limited Substitutes):
MUN5235DW1T1G and NSVMUN5235DW1T1G (onsemi) feature 2 NPN configuration instead of 1 NPN/1 PNP. These are suitable only for applications requiring dual NPN transistors. NSVMUN5235DW1T1G includes automotive qualification (AEC-Q101) and higher power rating (385 mW).
Not Recommended:
PUMD24,115 (Nexperia) features reduced collector current (20 mA vs. 100 mA) and different internal resistor values (100 kOhms vs. 2.2/47 kOhms), making it unsuitable for direct substitution.
Frequently Asked Questions (FAQ)
Q1: Can SMUN5335DW1T1G directly replace BCR08PNE6433HTMA1?
Yes. SMUN5335DW1T1G maintains identical transistor configuration (1 NPN, 1 PNP), internal resistor values (R1: 2.2 kOhms, R2: 47 kOhms), maximum collector current (100 mA), breakdown voltage (50 V), and SOT-363 package. The part is in active production with AEC-Q101 automotive qualification.
Q2: What is the difference between SOT-363 and 6-TSSOP packages?
Both are 6-pin surface mount packages with identical electrical pin assignments and compatible footprints. SOT-363 (SC-88) and 6-TSSOP are mechanically and electrically interchangeable. PCB layout modifications are not required for package substitution between these types.
Q3: Why does DCX123JUQ-7-F have higher transition frequency (250 MHz vs. 170 MHz)?
Transition frequency is a manufacturing characteristic determined by semiconductor process technology. Higher transition frequency indicates faster switching capability. For most applications, both frequencies are sufficient. Applications requiring specific frequency performance should verify compatibility with circuit requirements.
Q4: Can MUN5235DW1T1G (2 NPN) replace BCR08PNE6433HTMA1 (1 NPN, 1 PNP)?
No, not for general applications. MUN5235DW1T1G contains two NPN transistors instead of one NPN and one PNP. Substitution is only valid for circuits designed to use dual NPN configuration. Circuits requiring complementary NPN/PNP pairs must use equivalent parts maintaining 1 NPN, 1 PNP configuration.
Q5: What does AEC-Q101 qualification mean?
AEC-Q101 is an automotive industry standard qualification for discrete semiconductors. Parts bearing this qualification have undergone rigorous testing for reliability, temperature stability, and performance consistency. AEC-Q101 qualified parts are preferred for automotive and mission-critical applications.
Q6: Are there inventory differences between substitute parts?
Yes. Inventory levels vary by manufacturer and distributor. SMUN5335DW1T1G has 38,400 units in stock, DCX123JUQ-7-F has 38,980 units, and MUN5335DW1T1G has 3,475 units. Verify current availability with component suppliers before design finalization.
Q7: What is the significance of Vce saturation specifications?
Vce saturation (measured at specific Ib and Ic conditions) indicates how completely the transistor turns on. Lower saturation voltage (100 mV vs. 300 mV) means less power dissipation and faster switching. For switching applications, lower saturation voltage is advantageous. For linear amplification, saturation voltage is less critical.
Q8: Can PUMD10,115 replace BCR08PNE6433HTMA1 in existing designs?
PUMD10,115 maintains identical electrical parameters and 1 NPN, 1 PNP configuration. However, it uses 6-TSSOP package instead of SOT-363. PCB footprint modification is required. Electrical performance is superior (100 mV saturation vs. 300 mV, 100 hFE vs. 70 hFE). Substitution is valid with PCB redesign.
Q9: What does MSL 1 (Unlimited) mean?
MSL (Moisture Sensitivity Level) 1 indicates the component has unlimited shelf life without special moisture control. No baking or dry-pack storage is required. All listed substitute parts maintain MSL 1 rating, ensuring consistent handling requirements.
Q10: Are all substitute parts RoHS3 compliant?
Yes. All active substitute parts listed (SMUN5335DW1T1G, DCX123JU-7-F, DCX123JUQ-7-F, MUN5235DW1T1G, MUN5335DW1T1G, NSVMUN5235DW1T1G, PUMD10,115, PUMD10,125, PUMD24,115, PUMD48,115) are RoHS3 compliant. The obsolete BCR08PNE6433HTMA1 is REACH unaffected. All parts share identical ECCN (EAR99) and HTSUS classifications.
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