BCR08PNE6433HTMA1 Equivalent & Substitute Parts

Part Overview

The BCR08PNE6433HTMA1 is a pre-biased dual transistor (1 NPN, 1 PNP) manufactured by Infineon Technologies in SOT-363 surface mount package. This component integrates two complementary transistors with internal biasing resistors, designed for switching and amplification applications requiring compact form factors.

The BCR08PNE6433HTMA1 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Substitute components must maintain electrical compatibility across critical parameters including collector current, breakdown voltage, saturation characteristics, and package form factor.

Substiute Parts

BCR08PNE6433HTMA1
Infineon TechnologiesIn Stock: 1183BCR08PNE6433HTMA1 Datasheet
BCR08PNE6433HTMA1
Current Part
SMUN5335DW1T1G
onsemiIn Stock: 38508SMUN5335DW1T1G Datasheet
SMUN5335DW1T1G
Direct
DCX123JU-7-F
Diodes IncorporatedIn Stock: 188113DCX123JU-7-F Datasheet
DCX123JU-7-F
MFR Recommended
DCX123JUQ-7-F
Diodes IncorporatedIn Stock: 38990DCX123JUQ-7-F Datasheet
DCX123JUQ-7-F
MFR Recommended
MUN5235DW1T1G
onsemiIn Stock: 100375MUN5235DW1T1G Datasheet
MUN5235DW1T1G
MFR Recommended
MUN5335DW1T1G
onsemiIn Stock: 3549MUN5335DW1T1G Datasheet
MUN5335DW1T1G
MFR Recommended
NSVMUN5235DW1T1G
onsemiIn Stock: 884NSVMUN5235DW1T1G Datasheet
NSVMUN5235DW1T1G
MFR Recommended
PUMD10,115
Nexperia USA Inc.In Stock: 21489PUMD10,115 Datasheet
PUMD10,115
MFR Recommended
PUMD10,125
Nexperia USA Inc.In Stock: 1138PUMD10,125 Datasheet
PUMD10,125
MFR Recommended
PUMD24,115
Nexperia USA Inc.In Stock: 1918PUMD24,115 Datasheet
PUMD24,115
MFR Recommended
PUMD48,115
Nexperia USA Inc.In Stock: 4396PUMD48,115 Datasheet
PUMD48,115
MFR Recommended
PUMD48,165
Nexperia USA Inc.In Stock: 1117PUMD48,165 Datasheet
PUMD48,165
MFR Recommended
PUMH10,115
Nexperia USA Inc.In Stock: 12235PUMH10,115 Datasheet
PUMH10,115
MFR Recommended
PUMH10,125
Nexperia USA Inc.In Stock: 3816PUMH10,125 Datasheet
PUMH10,125
MFR Recommended
PUMH10Z
Nexperia USA Inc.In Stock: 10507PUMH10Z Datasheet
PUMH10Z
MFR Recommended
RN1905(T5L,F,T)
Toshiba Semiconductor and StorageIn Stock: 920RN1905(T5L,F,T) Datasheet
RN1905(T5L,F,T)
MFR Recommended
RN1905,LF(CT
Toshiba Semiconductor and StorageIn Stock: 5625RN1905,LF(CT Datasheet
RN1905,LF(CT
MFR Recommended
RN4905,LF(CT
Toshiba Semiconductor and StorageIn Stock: 4152RN4905,LF(CT Datasheet
RN4905,LF(CT
MFR Recommended
RN4985,LF(CT
Toshiba Semiconductor and StorageIn Stock: 3989RN4985,LF(CT Datasheet
RN4985,LF(CT
MFR Recommended
SMUN5235DW1T1G
onsemiIn Stock: 101423SMUN5235DW1T1G Datasheet
SMUN5235DW1T1G
MFR Recommended
SMUN5235DW1T3G
onsemiIn Stock: 11173SMUN5235DW1T3G Datasheet
SMUN5235DW1T3G
MFR Recommended
SMUN5335DW1T2G
onsemiIn Stock: 2472SMUN5335DW1T2G Datasheet
SMUN5335DW1T2G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) Max 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) Min @ Ic, Vce 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Frequency - Transition 170 MHz
Power - Max 250 mW
Package / Case 6-VSSOP, SC-88, SOT-363
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the BCR08PNE6433HTMA1 are selected based on strict electrical and mechanical compatibility. The following critical parameters determine substitution eligibility:

Primary Compatibility Criteria:

  • Transistor configuration: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Maximum collector current: 100 mA
  • Collector-emitter breakdown voltage: 50 V
  • Base resistor (R1): 2.2 kOhms
  • Emitter-base resistor (R2): 47 kOhms
  • Package type: SOT-363 (6-pin surface mount)

Secondary Compatibility Criteria:

  • DC current gain (hFE) minimum: 70 or higher
  • Vce saturation: 300 mV or lower
  • Power dissipation: 250 mW or higher
  • Moisture sensitivity: MSL 1 (Unlimited)

Substitute parts are grouped into two categories:

Category A - Direct Electrical Equivalents (1 NPN, 1 PNP Configuration): These parts maintain identical transistor configuration and internal resistor values, ensuring pin-for-pin compatibility and functional equivalence.

Category B - Functional Alternatives (Different Transistor Configuration): These parts feature different internal configurations (2 NPN instead of 1 NPN/1 PNP) but maintain compatible electrical parameters for applications requiring only one transistor type.


Parameter Comparison

Part Number Manufacturer Transistor Type Ic Max (mA) Vce Breakdown (V) R1 (kOhms) R2 (kOhms) hFE Min @ Ic, Vce Vce Sat Max (mV) Power Max (mW) Package Status
BCR08PNE6433HTMA1 Infineon 1 NPN, 1 PNP 100 50 2.2 47 70 @ 5mA, 5V 300 @ 500µA, 10mA 250 SOT-363 Obsolete
SMUN5335DW1T1G onsemi 1 NPN, 1 PNP 100 50 2.2 47 80 @ 5mA, 10V 250 @ 300µA, 10mA 187 SOT-363 Active
DCX123JU-7-F Diodes Inc. 1 NPN, 1 PNP 100 50 2.2 47 80 @ 10mA, 5V 300 @ 250µA, 5mA 200 SOT-363 Active
DCX123JUQ-7-F Diodes Inc. 1 NPN, 1 PNP 100 50 2.2 47 80 @ 10mA, 5V 300 @ 250µA, 5mA 200 SOT-363 Active
MUN5235DW1T1G onsemi 2 NPN 100 50 2.2 47 80 @ 5mA, 10V 250 @ 300µA, 10mA 250 SOT-363 Active
MUN5335DW1T1G onsemi 1 NPN, 1 PNP 100 50 2.2 47 80 @ 5mA, 10V 250 @ 300µA, 10mA 250 SOT-363 Active
NSVMUN5235DW1T1G onsemi 2 NPN 100 50 2.2 47 80 @ 5mA, 10V 250 @ 1mA, 10mA 385 SOT-363 Active
PUMD10,115 Nexperia 1 NPN, 1 PNP 100 50 2.2 47 100 @ 10mA, 5V 100 @ 250µA, 5mA 300 6-TSSOP Active
PUMD10,125 Nexperia 1 NPN, 1 PNP 100 50 2.2 47 100 @ 10mA, 5V 100 @ 250µA, 5mA 200 6-TSSOP Active
PUMD24,115 Nexperia 1 NPN, 1 PNP 20 50 100 100 80 @ 5mA, 5V 150 @ 250µA, 5mA 300 6-TSSOP Active
PUMD48,115 Nexperia 1 NPN, 1 PNP 100 50 47, 2.2 47 80 @ 5mA, 5V / 100 @ 10mA, 5V 150 @ 500µA, 10mA / 100 @ 250µA, 5mA 300 6-TSSOP Active

Engineering Selection Recommendations

Tier 1 - Direct Equivalents (Recommended Primary Substitutes):

MUN5335DW1T1G (onsemi) and DCX123JUQ-7-F (Diodes Incorporated) are the primary recommended substitutes. Both maintain identical transistor configuration (1 NPN, 1 PNP), matching internal resistor values (R1: 2.2 kOhms, R2: 47 kOhms), and SOT-363 package compatibility. Both parts are in active production status with AEC-Q101 automotive qualification, ensuring long-term availability and reliability. MUN5335DW1T1G offers improved saturation characteristics (250 mV vs. 300 mV) and higher DC current gain (80 vs. 70). DCX123JUQ-7-F provides superior transition frequency (250 MHz vs. 170 MHz).

Tier 2 - Compatible Alternatives (Secondary Substitutes):

SMUN5335DW1T1G (onsemi) provides direct electrical equivalence with automotive qualification (AEC-Q101) and active status. PUMD10,115 and PUMD10,125 (Nexperia) maintain identical electrical parameters but use 6-TSSOP package instead of SOT-363. These require PCB layout modification but offer superior saturation performance (100 mV vs. 300 mV) and higher DC current gain (100 vs. 70).

Tier 3 - Functional Alternatives (Limited Substitutes):

MUN5235DW1T1G and NSVMUN5235DW1T1G (onsemi) feature 2 NPN configuration instead of 1 NPN/1 PNP. These are suitable only for applications requiring dual NPN transistors. NSVMUN5235DW1T1G includes automotive qualification (AEC-Q101) and higher power rating (385 mW).

Not Recommended:

PUMD24,115 (Nexperia) features reduced collector current (20 mA vs. 100 mA) and different internal resistor values (100 kOhms vs. 2.2/47 kOhms), making it unsuitable for direct substitution.


Frequently Asked Questions (FAQ)

Q1: Can SMUN5335DW1T1G directly replace BCR08PNE6433HTMA1?

Yes. SMUN5335DW1T1G maintains identical transistor configuration (1 NPN, 1 PNP), internal resistor values (R1: 2.2 kOhms, R2: 47 kOhms), maximum collector current (100 mA), breakdown voltage (50 V), and SOT-363 package. The part is in active production with AEC-Q101 automotive qualification.

Q2: What is the difference between SOT-363 and 6-TSSOP packages?

Both are 6-pin surface mount packages with identical electrical pin assignments and compatible footprints. SOT-363 (SC-88) and 6-TSSOP are mechanically and electrically interchangeable. PCB layout modifications are not required for package substitution between these types.

Q3: Why does DCX123JUQ-7-F have higher transition frequency (250 MHz vs. 170 MHz)?

Transition frequency is a manufacturing characteristic determined by semiconductor process technology. Higher transition frequency indicates faster switching capability. For most applications, both frequencies are sufficient. Applications requiring specific frequency performance should verify compatibility with circuit requirements.

Q4: Can MUN5235DW1T1G (2 NPN) replace BCR08PNE6433HTMA1 (1 NPN, 1 PNP)?

No, not for general applications. MUN5235DW1T1G contains two NPN transistors instead of one NPN and one PNP. Substitution is only valid for circuits designed to use dual NPN configuration. Circuits requiring complementary NPN/PNP pairs must use equivalent parts maintaining 1 NPN, 1 PNP configuration.

Q5: What does AEC-Q101 qualification mean?

AEC-Q101 is an automotive industry standard qualification for discrete semiconductors. Parts bearing this qualification have undergone rigorous testing for reliability, temperature stability, and performance consistency. AEC-Q101 qualified parts are preferred for automotive and mission-critical applications.

Q6: Are there inventory differences between substitute parts?

Yes. Inventory levels vary by manufacturer and distributor. SMUN5335DW1T1G has 38,400 units in stock, DCX123JUQ-7-F has 38,980 units, and MUN5335DW1T1G has 3,475 units. Verify current availability with component suppliers before design finalization.

Q7: What is the significance of Vce saturation specifications?

Vce saturation (measured at specific Ib and Ic conditions) indicates how completely the transistor turns on. Lower saturation voltage (100 mV vs. 300 mV) means less power dissipation and faster switching. For switching applications, lower saturation voltage is advantageous. For linear amplification, saturation voltage is less critical.

Q8: Can PUMD10,115 replace BCR08PNE6433HTMA1 in existing designs?

PUMD10,115 maintains identical electrical parameters and 1 NPN, 1 PNP configuration. However, it uses 6-TSSOP package instead of SOT-363. PCB footprint modification is required. Electrical performance is superior (100 mV saturation vs. 300 mV, 100 hFE vs. 70 hFE). Substitution is valid with PCB redesign.

Q9: What does MSL 1 (Unlimited) mean?

MSL (Moisture Sensitivity Level) 1 indicates the component has unlimited shelf life without special moisture control. No baking or dry-pack storage is required. All listed substitute parts maintain MSL 1 rating, ensuring consistent handling requirements.

Q10: Are all substitute parts RoHS3 compliant?

Yes. All active substitute parts listed (SMUN5335DW1T1G, DCX123JU-7-F, DCX123JUQ-7-F, MUN5235DW1T1G, MUN5335DW1T1G, NSVMUN5235DW1T1G, PUMD10,115, PUMD10,125, PUMD24,115, PUMD48,115) are RoHS3 compliant. The obsolete BCR08PNE6433HTMA1 is REACH unaffected. All parts share identical ECCN (EAR99) and HTSUS classifications.

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