BCP52 PNP Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The BCP52 is a PNP bipolar junction transistor manufactured by onsemi, rated for 60V collector-emitter breakdown voltage and 1.2A maximum collector current in a surface mount SOT-223-4 package. The device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating the transition to active product lines.

Substiute Parts

BCP52
onsemiIn Stock: 55236BCP52 Datasheet
BCP52
Current Part
BCP53T1G
onsemiIn Stock: 105176BCP53T1G Datasheet
BCP53T1G
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NSS60600MZ4T1G
onsemiIn Stock: 25222NSS60600MZ4T1G Datasheet
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NSS60600MZ4T3G
onsemiIn Stock: 2476NSS60600MZ4T3G Datasheet
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PZT751T1G
onsemiIn Stock: 386735PZT751T1G Datasheet
PZT751T1G
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BCP51,115
Nexperia USA Inc.In Stock: 53025BCP51,115 Datasheet
BCP51,115
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BCP51-16,135
Nexperia USA Inc.In Stock: 6589BCP51-16,135 Datasheet
BCP51-16,135
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BCP51-16-TP
Micro Commercial CoIn Stock: 1164BCP51-16-TP Datasheet
BCP51-16-TP
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BCP52,135
Nexperia USA Inc.In Stock: 12349BCP52,135 Datasheet
BCP52,135
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BCP52-10,135
Nexperia USA Inc.In Stock: 5749BCP52-10,135 Datasheet
BCP52-10,135
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BCP52-16,115
Nexperia USA Inc.In Stock: 2192BCP52-16,115 Datasheet
BCP52-16,115
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BCP5216H6327XTSA1
Infineon TechnologiesIn Stock: 1135BCP5216H6327XTSA1 Datasheet
BCP5216H6327XTSA1
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BCP52TA
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BCP52TA
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DSS60600MZ4-13
Diodes IncorporatedIn Stock: 6005DSS60600MZ4-13 Datasheet
DSS60600MZ4-13
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FZT591TA
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FZT591TA
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FZT751QTA
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FZT751QTA
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FZT751QTC
Diodes IncorporatedIn Stock: 19165FZT751QTC Datasheet
FZT751QTC
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FZT751TA
Diodes IncorporatedIn Stock: 43868FZT751TA Datasheet
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FZT751TC
Diodes IncorporatedIn Stock: 8942FZT751TC Datasheet
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FZT792ATA
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FZT951TA
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FZT951TC
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Key Parameters

Parameter Value Unit
Transistor Type PNP
Collector-Emitter Breakdown Voltage (Max) 60 V
Collector Current (Max) 1.2 A
Power Dissipation (Max) 1.5 W
Vce Saturation (Max) 500 mV @ 50mA, 500mA
DC Current Gain (hFE Min) 40 @ 150mA, 2V
Collector Cutoff Current (Max) 100 nA
Operating Temperature Range -55 to 150 °C
Package Type SOT-223-4 (TO-261-4) Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts are classified into two categories based on electrical parameter compatibility with the BCP52:

Direct Substitutes (Electrical Upgrade Path): Parts that maintain or exceed all critical electrical parameters of the BCP52 while remaining in active product status. These components can replace the BCP52 in applications without circuit modification.

Similar Substitutes (Parameter Variance): Parts that share the same transistor type (PNP), package format (SOT-223), and mounting technology but differ in one or more electrical specifications. Selection requires verification that application requirements accommodate the parameter differences.

Critical Parameters for Substitution:

  • Transistor Type: PNP (mandatory match)
  • Package: SOT-223-4 / TO-261-4 (mandatory match for mechanical compatibility)
  • Collector-Emitter Breakdown Voltage: Must equal or exceed 60V
  • Collector Current Rating: Must equal or exceed 1.2A
  • Power Dissipation: Must equal or exceed 1.5W
  • Vce Saturation: Must not exceed 500mV at specified bias conditions
  • Operating Temperature: Must encompass -55°C to 150°C or application-specific range
  • RoHS Compliance: ROHS3 required for regulatory alignment

Parameter Comparison

Part Number Manufacturer Status Ic (Max) A Vce(br) V Power W Vce Sat mV hFE (Min) Temp Range °C Packaging
BCP52 onsemi Obsolete 1.2 60 1.5 500 40 -55 to 150 CT & Digi-Reel
BCP53T1G onsemi Active 1.5 80 1.5 500 40 -65 to 150 CT & Digi-Reel
NSS60600MZ4T1G onsemi Active 6.0 60 0.8 350 120 -55 to 150 CT & Digi-Reel
NSS60600MZ4T3G onsemi Active 6.0 60 0.8 350 120 -55 to 150 Tape & Reel
PZT751T1G onsemi Active 2.0 60 0.8 500 75 -55 to 150 Tape & Reel
BCP51,115 Nexperia USA Inc. Active 1.0 45 1.0 500 63 -55 to 150 CT & Digi-Reel
BCP51-16,135 Nexperia USA Inc. Active 1.0 45 1.0 500 100 -55 to 150 Tape & Reel
BCP51-16-TP Micro Commercial Co Active 1.0 45 0.3 500 100 -55 to 150 Tape & Reel
BCP52,135 Nexperia USA Inc. Active 1.0 60 1.0 500 63 -55 to 150 Tape & Reel
BCP52-10,135 Nexperia USA Inc. Active 1.0 60 1.3 500 63 -55 to 150 CT & Digi-Reel
BCP52-16,115 Nexperia USA Inc. Active 1.0 60 1.0 500 100 -55 to 150 Tape & Reel

Engineering Selection Recommendations

Primary Recommendation: BCP53T1G

The BCP53T1G is the optimal direct substitute for the BCP52. This onsemi component maintains PNP transistor type and SOT-223-4 package compatibility while providing electrical parameter enhancements: 1.5A collector current (exceeds 1.2A requirement), 80V breakdown voltage (exceeds 60V requirement), and extended lower operating temperature limit (-65°C versus -55°C). The device is in active product status with ROHS3 compliance and unlimited moisture sensitivity rating. Transition from BCP52 to BCP53T1G requires no circuit modifications.

Secondary Recommendation: BCP52,135 or BCP52-16,115

For applications requiring exact voltage and current specifications matching the original BCP52, Nexperia USA Inc. manufactures BCP52-series variants in active status. BCP52,135 (Tape & Reel packaging) and BCP52-16,115 (Tape & Reel packaging) provide 60V breakdown voltage and 1A collector current with ROHS3 compliance and AEC-Q100 automotive qualification. These parts accommodate the full -55°C to 150°C operating range. Note: Collector current is rated at 1.0A rather than 1.2A; verify application current requirements before selection.

Alternative for Higher Current Applications: PZT751T1G

The PZT751T1G (onsemi) provides 2.0A collector current at 60V breakdown voltage, suitable for applications requiring current margin above the 1.2A BCP52 specification. This part maintains SOT-223 package compatibility and ROHS3 compliance with active product status.

Not Recommended: BCP51 Series

BCP51,115, BCP51-16,135, and BCP51-16-TP are rated for 45V collector-emitter breakdown voltage, which is below the 60V specification of the BCP52. These parts are suitable only for applications with reduced voltage requirements.

Not Recommended: NSS60600 Series

NSS60600MZ4T1G and NSS60600MZ4T3G provide 6.0A collector current but reduced power dissipation (0.8W versus 1.5W) and lower Vce saturation voltage (350mV versus 500mV). Selection requires verification that application thermal and saturation characteristics are compatible with these parameter differences.

Frequently Asked Questions (FAQ)

Q: Can the BCP52 be directly replaced with the BCP53T1G?

A: Yes. The BCP53T1G is a direct substitute. Both components use PNP transistor type and SOT-223-4 package format. The BCP53T1G provides equal or superior electrical performance across all critical parameters: higher collector current (1.5A vs. 1.2A), higher breakdown voltage (80V vs. 60V), and extended temperature range (-65°C to 150°C vs. -55°C to 150°C). No circuit modifications are required.

Q: What is the difference between BCP52 variants from onsemi and Nexperia?

A: The original BCP52 is manufactured by onsemi and is now obsolete. Nexperia USA Inc. manufactures active BCP52-series variants (BCP52,135 and BCP52-16,115) with identical electrical specifications but different packaging formats (Tape & Reel) and automotive qualification (AEC-Q100). These Nexperia parts maintain 60V breakdown voltage and 1A collector current ratings.

Q: Why does the BCP52-10,135 show 1.0A collector current instead of 1.2A?

A: The BCP52-10,135 is a Nexperia variant with a maximum collector current rating of 1.0A, which is lower than the original onsemi BCP52 specification of 1.2A. This part is suitable only for applications with current requirements at or below 1.0A. For applications requiring the full 1.2A capability, select BCP53T1G or verify that reduced current rating is acceptable.

Q: Can I use BCP51 parts as substitutes for BCP52?

A: BCP51 parts are not recommended as direct substitutes. The BCP51 series is rated for 45V collector-emitter breakdown voltage, which is 15V below the BCP52 specification of 60V. Use BCP51 parts only in applications with voltage requirements at or below 45V.

Q: What is the significance of the packaging designation "CT & Digi-Reel" versus "Tape & Reel"?

A: "CT & Digi-Reel" indicates Cut Tape and Digi-Reel packaging, suitable for manual component handling and small-quantity assembly. "Tape & Reel" indicates continuous reel packaging for automated pick-and-place assembly. Both formats contain identical components; packaging selection depends on assembly process requirements. Verify that your assembly equipment is compatible with the selected packaging format.

Q: Is the BCP52 RoHS compliant?

A: Yes. The BCP52 is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1). All recommended substitute parts maintain ROHS3 compliance and MSL 1 rating, ensuring regulatory alignment and storage compatibility.

Q: What does "Obsolete" product status mean for the BCP52?

A: Obsolete status indicates that onsemi has discontinued manufacturing the BCP52. Existing inventory may be available from authorized distributors, but long-term supply is not guaranteed. For new designs and production continuity, transition to active substitute parts such as BCP53T1G or Nexperia BCP52-series variants.

Q: Can NSS60600 parts replace the BCP52 in all applications?

A: NSS60600 parts provide higher collector current (6.0A) but reduced power dissipation (0.8W vs. 1.5W) and lower saturation voltage (350mV vs. 500mV). These differences may affect thermal performance and switching characteristics. Verify that your application requirements are compatible with these parameter variations before substitution.

Q: What is the difference between BCP53T1G and PZT751T1G?

A: Both are onsemi PNP transistors in SOT-223 packages with 60V breakdown voltage. BCP53T1G provides 1.5A collector current and 1.5W power dissipation. PZT751T1G provides 2.0A collector current but only 0.8W power dissipation. Select BCP53T1G for applications requiring higher power handling; select PZT751T1G for applications requiring higher current with lower power dissipation.

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