BC869-16,115 Equivalent & Substitute Parts

Part Overview

The BC869-16,115 is a PNP bipolar junction transistor manufactured by Nexperia USA Inc., designed for surface mount applications in the SOT-89 package. This transistor operates at a maximum collector current of 1 A with a collector-emitter breakdown voltage of 20 V, making it suitable for low-to-medium power switching and amplification circuits. The device is rated for automotive applications with AEC-Q100 qualification and operates at a maximum junction temperature of 150°C.

Substitute parts are necessary when the BC869-16,115 reaches end-of-life status, experiences supply constraints, or when design requirements necessitate enhanced electrical performance characteristics such as higher current capacity, improved frequency response, or extended temperature ranges.

Substiute Parts

BC869-16,115
Nexperia USA Inc.In Stock: 1123BC869-16,115 Datasheet
BC869-16,115
Current Part
2DB1386Q-13
Diodes IncorporatedIn Stock: 20492DB1386Q-13 Datasheet
2DB1386Q-13
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2DB1386R-13
Diodes IncorporatedIn Stock: 35902DB1386R-13 Datasheet
2DB1386R-13
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2SB1302S-TD-E
onsemiIn Stock: 14962SB1302S-TD-E Datasheet
2SB1302S-TD-E
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BCX6925TA
Diodes IncorporatedIn Stock: 36348BCX6925TA Datasheet
BCX6925TA
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CBCX69 TR PBFREE
Central Semiconductor CorpIn Stock: 1611CBCX69 TR PBFREE Datasheet
CBCX69 TR PBFREE
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FCX718TA
Diodes IncorporatedIn Stock: 17022FCX718TA Datasheet
FCX718TA
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Key Parameters

Parameter BC869-16,115 Unit
Transistor Type PNP
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 20 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 1V
Power - Max 1.2 W
Frequency - Transition 140 MHz
Operating Temperature (TJ) 150 °C
Package / Case TO-243AA
Supplier Device Package SOT-89
Mounting Type Surface Mount
Grade Automotive
Qualification AEC-Q100
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the BC869-16,115 are classified based on electrical parameter compatibility within the PNP bipolar junction transistor category. The primary substitution criteria are:

Critical Parameters for Substitution:

  • Transistor Type: PNP (mandatory match)
  • Voltage - Collector Emitter Breakdown: 20 V (must equal or exceed)
  • Package / Case: TO-243AA (physical compatibility)
  • Mounting Type: Surface Mount (assembly compatibility)
  • Current - Collector (Ic) (Max): 1 A minimum (functional requirement)

Secondary Parameters Affecting Substitution:

  • Vce Saturation characteristics
  • DC Current Gain (hFE)
  • Frequency - Transition
  • Power dissipation rating
  • Operating temperature range
  • Product status and compliance certifications

Substitute parts are grouped into two categories:

Category A - Direct Current Rating Match (1 A): Parts with identical or marginally higher collector current ratings that maintain similar power dissipation and frequency characteristics.

Category B - Enhanced Current Rating (≥2.5 A): Parts with significantly higher collector current capacity, suitable for applications requiring increased current handling while maintaining 20 V breakdown voltage compatibility.

Parameter Comparison

Parameter BC869-16,115 BCX6925TA CBCX69 TR PBFREE FCX718TA 2DB1386Q-13 2DB1386R-13 2SB1302S-TD-E
Transistor Type PNP PNP PNP PNP PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 2.5 A 5 A 5 A 5 A
Voltage - Collector Emitter Breakdown (Max) 20 V 20 V 20 V 20 V 20 V 20 V 20 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 300mV @ 200mA, 2.5A 1V @ 100mA, 4A 1V @ 100mA, 4A 500mV @ 60mA, 3A
Current - Collector Cutoff (Max) 100nA 100nA 100nA 100nA 500nA 500nA 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 1V 160 @ 500mA, 1V 85 @ 500mA, 1V 150 @ 2A, 2V 120 @ 500mA, 2V 180 @ 500mA, 2V 100 @ 500mA, 2V
Power - Max 1.2 W 1 W 1.2 W 2 W 1 W 1 W 1.3 W
Frequency - Transition 140 MHz 100 MHz 65 MHz 180 MHz 100 MHz 100 MHz 320 MHz
Operating Temperature (TJ) 150°C -65°C ~ 150°C -65°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C 150°C
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package SOT-89 SOT-89-3 SOT-89 SOT-89-3 SOT-89-3 SOT-89-3 PCP
Product Status Active Active Active Active Active Active Obsolete
Grade Automotive Automotive
Qualification AEC-Q100 AEC-Q101
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

BCX6925TA (Diodes Incorporated)

The BCX6925TA is the primary direct substitute for the BC869-16,115. Both devices share identical collector current (1 A) and breakdown voltage (20 V) ratings with matching saturation voltage characteristics. The BCX6925TA offers superior DC current gain (160 vs. 100) and extended operating temperature range (-65°C to 150°C). The device is active in production with ROHS3 compliance and unlimited moisture sensitivity rating. The SOT-89-3 package variant provides enhanced thermal performance compared to the standard SOT-89 package.

CBCX69 TR PBFREE (Central Semiconductor Corp)

The CBCX69 TR PBFREE maintains identical electrical specifications for current and voltage ratings with matching saturation characteristics. This device is suitable for applications where the lower transition frequency (65 MHz vs. 140 MHz) does not impact circuit performance. The extended temperature range (-65°C to 150°C) provides operational flexibility. Product status is active with full ROHS3 compliance.

FCX718TA (Diodes Incorporated)

The FCX718TA is suitable for applications requiring enhanced current handling capacity (2.5 A vs. 1 A) while maintaining 20 V breakdown voltage compatibility. This device offers superior transition frequency (180 MHz) and improved saturation voltage characteristics (300 mV). The higher power rating (2 W) accommodates increased thermal dissipation. Product status is active with ROHS3 compliance and extended temperature range (-55°C to 150°C).

2DB1386R-13 (Diodes Incorporated)

The 2DB1386R-13 provides significantly higher current capacity (5 A) for applications requiring substantial current handling. This device carries automotive grade qualification (AEC-Q101) and is active in production. The higher DC current gain (180) and extended temperature range (-55°C to 150°C) support demanding automotive applications. The SOT-89-3 package provides thermal advantages.

2DB1386Q-13 (Diodes Incorporated)

The 2DB1386Q-13 offers identical electrical performance to the 2DB1386R-13 with 5 A collector current capacity and 20 V breakdown voltage. This variant is active in production with ROHS3 compliance. The device is suitable for non-automotive applications requiring enhanced current capacity.

2SB1302S-TD-E (onsemi)

The 2SB1302S-TD-E is classified as obsolete and is not recommended for new designs. While the device offers superior transition frequency (320 MHz) and 5 A current capacity, its obsolete status limits long-term supply availability and support.

Frequently Asked Questions (FAQ)

Q: Can the BCX6925TA directly replace the BC869-16,115 in existing designs?

A: Yes. The BCX6925TA maintains identical collector current (1 A) and breakdown voltage (20 V) ratings with matching saturation voltage specifications (500 mV @ 100 mA, 1 A). Both devices use the TO-243AA package for surface mount assembly. The BCX6925TA offers improved DC current gain and extended temperature range, making it a direct functional equivalent.

Q: What is the difference between SOT-89 and SOT-89-3 packages?

A: Both packages conform to the TO-243AA case outline and are physically compatible for PCB assembly. The SOT-89-3 designation indicates a variant of the SOT-89 package. Thermal performance and lead configuration may differ slightly between variants, but both are suitable for surface mount applications in the same footprint.

Q: When should I select FCX718TA instead of BCX6925TA?

A: Select the FCX718TA when circuit requirements exceed 1 A collector current capacity. The FCX718TA supports 2.5 A maximum collector current with improved saturation voltage (300 mV) and higher transition frequency (180 MHz). This device is suitable for higher-power switching applications while maintaining 20 V breakdown voltage compatibility.

Q: Are the 2DB1386 variants suitable for automotive applications?

A: The 2DB1386R-13 carries automotive grade qualification (AEC-Q101) and is suitable for automotive applications. The 2DB1386Q-13 does not carry automotive qualification and is intended for general industrial applications. For automotive designs, specify the 2DB1386R-13 variant.

Q: Why is the 2SB1302S-TD-E listed as obsolete?

A: The 2SB1302S-TD-E is classified as obsolete by the manufacturer (onsemi). Obsolete products have discontinued production and limited supply availability. New designs should not incorporate obsolete components. Existing designs using this device should transition to active alternatives such as BCX6925TA or 2DB1386R-13.

Q: What are the key electrical parameters that determine substitution compatibility?

A: The primary parameters are transistor type (PNP), collector-emitter breakdown voltage (20 V minimum), and collector current rating (1 A minimum for direct substitution). Secondary parameters include saturation voltage, DC current gain, transition frequency, and operating temperature range. All substitute parts must maintain the TO-243AA package and surface mount mounting type for physical compatibility.

Q: Can I use a higher-current device like 2DB1386R-13 in place of BC869-16,115?

A: Yes, with design verification. The 2DB1386R-13 supports 5 A collector current and maintains 20 V breakdown voltage compatibility. Higher current capacity does not degrade performance in circuits designed for lower current operation. However, verify that saturation voltage characteristics (1 V @ 100 mA, 4 A) and DC current gain (180 @ 500 mA, 2 V) are acceptable for the specific application. The device is suitable for applications requiring future current expansion or enhanced reliability margins.

Q: What is the significance of DC Current Gain (hFE) differences between substitute parts?

A: DC current gain determines the base current required to achieve a specified collector current. Higher hFE values (e.g., 180 in 2DB1386R-13 vs. 100 in BC869-16,115) require lower base drive current for the same collector current. This affects circuit design for switching applications. Verify that base drive circuits can accommodate the hFE characteristics of the selected substitute part.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 compliance status. All devices are lead-free and comply with hazardous substance restrictions. Moisture sensitivity level is 1 (Unlimited) for all parts, indicating no special moisture control requirements during storage and handling.

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