BC859CE6327HTSA1 Equivalent & Substitute Parts

Part Overview

The BC859CE6327HTSA1 is a PNP bipolar junction transistor manufactured by Infineon Technologies, designed for general-purpose switching and amplification applications. This device operates at 30 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and transition frequency of 250 MHz. The part is classified as Last Time Buy status, indicating limited availability from the original manufacturer. Equivalent and substitute parts are necessary to ensure design continuity, maintain supply chain flexibility, and support long-term production requirements.

Substiute Parts

BC859CE6327HTSA1
Infineon TechnologiesIn Stock: 5745BC859CE6327HTSA1 Datasheet
BC859CE6327HTSA1
Current Part
BC858CE6327HTSA1
Infineon TechnologiesIn Stock: 102403BC858CE6327HTSA1 Datasheet
BC858CE6327HTSA1
Parametric Equivalent
BC858CE6433HTMA1
Infineon TechnologiesIn Stock: 985BC858CE6433HTMA1 Datasheet
BC858CE6433HTMA1
Parametric Equivalent
BC858C-7-F
Diodes IncorporatedIn Stock: 453214BC858C-7-F Datasheet
BC858C-7-F
Direct
BC858CLT1G
onsemiIn Stock: 35395BC858CLT1G Datasheet
BC858CLT1G
Direct
BC859C,215
Nexperia USA Inc.In Stock: 16490BC859C,215 Datasheet
BC859C,215
Direct
NSVBC858CLT1G
onsemiIn Stock: 6543NSVBC858CLT1G Datasheet
NSVBC858CLT1G
Direct
2SB1695KT146
Rohm SemiconductorIn Stock: 2671902SB1695KT146 Datasheet
2SB1695KT146
MFR Recommended
2SB1695TL
Rohm SemiconductorIn Stock: 994032SB1695TL Datasheet
2SB1695TL
MFR Recommended
2SB1706TL
Rohm SemiconductorIn Stock: 18752SB1706TL Datasheet
2SB1706TL
MFR Recommended
2SB1708TL
Rohm SemiconductorIn Stock: 64412SB1708TL Datasheet
2SB1708TL
MFR Recommended
2SB1710TL
Rohm SemiconductorIn Stock: 156082SB1710TL Datasheet
2SB1710TL
MFR Recommended
2STR2230
STMicroelectronicsIn Stock: 2094722STR2230 Datasheet
2STR2230
MFR Recommended
BC807-40-7-F
Diodes IncorporatedIn Stock: 17132BC807-40-7-F Datasheet
BC807-40-7-F
MFR Recommended
BC858ALT1G
onsemiIn Stock: 29194BC858ALT1G Datasheet
BC858ALT1G
MFR Recommended
BC858B,215
Nexperia USA Inc.In Stock: 9197BC858B,215 Datasheet
BC858B,215
MFR Recommended
BC858B,235
Nexperia USA Inc.In Stock: 5797BC858B,235 Datasheet
BC858B,235
MFR Recommended
BC858B-7-F
Diodes IncorporatedIn Stock: 1956BC858B-7-F Datasheet
BC858B-7-F
MFR Recommended
BC858B-HF
Comchip TechnologyIn Stock: 752BC858B-HF Datasheet
BC858B-HF
MFR Recommended
BC858BLT1G
onsemiIn Stock: 20298BC858BLT1G Datasheet
BC858BLT1G
MFR Recommended
BC858C-HF
Comchip TechnologyIn Stock: 1254BC858C-HF Datasheet
BC858C-HF
MFR Recommended
BC858C-TP
Micro Commercial CoIn Stock: 1135BC858C-TP Datasheet
BC858C-TP
MFR Recommended
BC858CLT3G
onsemiIn Stock: 65206BC858CLT3G Datasheet
BC858CLT3G
MFR Recommended
BC859B,215
NXP SemiconductorsIn Stock: 9498754BC859B,215 Datasheet
BC859B,215
MFR Recommended
BC859C,235
Nexperia USA Inc.In Stock: 11014BC859C,235 Datasheet
BC859C,235
MFR Recommended
BCW29,215
Nexperia USA Inc.In Stock: 4146BCW29,215 Datasheet
BCW29,215
MFR Recommended
BCW29,235
Nexperia USA Inc.In Stock: 717BCW29,235 Datasheet
BCW29,235
MFR Recommended
BCW30,215
Nexperia USA Inc.In Stock: 12330BCW30,215 Datasheet
BCW30,215
MFR Recommended
BCW30LT1G
onsemiIn Stock: 28655BCW30LT1G Datasheet
BCW30LT1G
MFR Recommended
BCW61B,215
Nexperia USA Inc.In Stock: 1297BCW61B,215 Datasheet
BCW61B,215
MFR Recommended
BCW61C,215
Nexperia USA Inc.In Stock: 15224BCW61C,215 Datasheet
BCW61C,215
MFR Recommended
BCW61D,215
Nexperia USA Inc.In Stock: 7261BCW61D,215 Datasheet
BCW61D,215
MFR Recommended
FMMT549
onsemiIn Stock: 5464FMMT549 Datasheet
FMMT549
MFR Recommended
FMMT549TA
Diodes IncorporatedIn Stock: 5217FMMT549TA Datasheet
FMMT549TA
MFR Recommended
FMMT589TA
Diodes IncorporatedIn Stock: 68423FMMT589TA Datasheet
FMMT589TA
MFR Recommended
MMBT2907ALT1G
onsemiIn Stock: 1598431MMBT2907ALT1G Datasheet
MMBT2907ALT1G
MFR Recommended
MMBT2907ALT3G
onsemiIn Stock: 889099MMBT2907ALT3G Datasheet
MMBT2907ALT3G
MFR Recommended
MMBT4403LT1G
onsemiIn Stock: 824352MMBT4403LT1G Datasheet
MMBT4403LT1G
MFR Recommended
MMBT4403LT3G
onsemiIn Stock: 46972MMBT4403LT3G Datasheet
MMBT4403LT3G
MFR Recommended
MMBT589LT1G
onsemiIn Stock: 59313MMBT589LT1G Datasheet
MMBT589LT1G
MFR Recommended
NSVBC858BLT1G
onsemiIn Stock: 68397NSVBC858BLT1G Datasheet
NSVBC858BLT1G
MFR Recommended
PBSS5130T,215
Nexperia USA Inc.In Stock: 9609PBSS5130T,215 Datasheet
PBSS5130T,215
MFR Recommended
PBSS5230T,215
Nexperia USA Inc.In Stock: 3750PBSS5230T,215 Datasheet
PBSS5230T,215
MFR Recommended
SMMBT2907ALT1G
onsemiIn Stock: 35410SMMBT2907ALT1G Datasheet
SMMBT2907ALT1G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type PNP
Collector Current (Ic) Maximum 100 mA
Collector-Emitter Breakdown Voltage (Vceo) 30 V
Vce Saturation @ Ib, Ic 650 mV @ 5 mA, 100 mA
Collector Cutoff Current (Icbo) 15 nA
DC Current Gain (hFE) @ Ic, Vce 420 @ 2 mA, 5 V
Power Dissipation Maximum 330 mW
Transition Frequency (fT) 250 MHz
Operating Temperature Maximum 150 °C
Package Type SOT-23-3 (TO-236-3, SC-59)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the BC859CE6327HTSA1 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor Type: PNP configuration
  • Collector Current (Ic Max): 100 mA minimum
  • Collector-Emitter Breakdown Voltage (Vceo): 30 V minimum
  • Vce Saturation: 650 mV maximum @ 5 mA, 100 mA
  • DC Current Gain (hFE): 420 minimum @ 2 mA, 5 V
  • Power Dissipation: 330 mW minimum
  • Transition Frequency: 250 MHz minimum
  • Package: SOT-23-3 (TO-236-3, SC-59) surface mount
  • RoHS3 Compliance required
  • Moisture Sensitivity Level: 1 (Unlimited)

Substitution Categories:

Category 1: Parametric Equivalents (Infineon Technologies) Parts BC858CE6327HTSA1 and BC858CE6433HTMA1 meet all electrical specifications with identical performance parameters. These differ only in packaging format (Tape & Reel vs. Cut Tape) and internal manufacturing codes, maintaining full functional equivalence.

Category 2: Direct Equivalents (Alternative Manufacturers) Parts BC858C-7-F (Diodes Incorporated), BC858CLT1G (onsemi), BC859C,215 (Nexperia USA Inc.), and NSVBC858CLT3G (onsemi) provide equivalent electrical performance within the SOT-23-3 package. Minor variations in transition frequency (100–200 MHz) and power dissipation (250–300 mW) remain within acceptable operating margins for standard switching applications.

Category 3: Higher Current Capability (Rohm Semiconductor) Parts 2SB1695KT146, 2SB1695TL, 2SB1706TL, and 2SB1708TL exceed the base specification with collector currents of 1.5 A to 3 A. These parts maintain 30 V Vceo and are suitable for applications requiring higher current handling while preserving voltage and frequency characteristics.

Parameter Comparison

Manufacturer Part Number Manufacturer Ic (Max) mA Vceo (V) Vce Sat (mV) hFE @ Ic, Vce Power (mW) fT (MHz) Package Status
BC859CE6327HTSA1 Infineon 100 30 650 @ 5mA, 100mA 420 @ 2mA, 5V 330 250 SOT-23-3 Last Time Buy
BC858CE6327HTSA1 Infineon 100 30 650 @ 5mA, 100mA 420 @ 2mA, 5V 330 250 SOT-23-3 Last Time Buy
BC858CE6433HTMA1 Infineon 100 30 650 @ 5mA, 100mA 420 @ 2mA, 5V 330 250 SOT-23-3 Last Time Buy
BC858C-7-F Diodes Incorporated 100 30 650 @ 5mA, 100mA 420 @ 2mA, 5V 300 200 SOT-23-3 Active
BC858CLT1G onsemi 100 30 650 @ 5mA, 100mA 420 @ 2mA, 5V 300 100 SOT-23-3 Active
BC859C,215 Nexperia USA Inc. 100 30 650 @ 5mA, 100mA 420 @ 2mA, 5V 250 100 SOT-23-3 Active
NSVBC858CLT1G onsemi 100 30 650 @ 5mA, 100mA 420 @ 2mA, 5V 300 100 SOT-23-3 Active
2SB1695KT146 Rohm Semiconductor 1500 30 370 @ 50mA, 1A 270 @ 100mA, 2V 200 280 SOT-23-3 Active
2SB1695TL Rohm Semiconductor 1500 30 370 @ 50mA, 1A 270 @ 100mA, 2V 500 280 SC-96 Active
2SB1706TL Rohm Semiconductor 2000 30 370 @ 75mA, 1.5A 270 @ 200mA, 2V 500 280 SC-96 Active
2SB1708TL Rohm Semiconductor 3000 30 250 @ 30mA, 1.5A 270 @ 200mA, 2V 500 200 SC-96 Active

Engineering Selection Recommendations

For Direct Replacement (100 mA Collector Current Applications):

BC858C-7-F (Diodes Incorporated) and BC858CLT1G (onsemi) are recommended as primary substitutes. Both parts maintain Active product status, ensuring long-term availability and supply chain stability. These devices are RoHS3 compliant with MSL 1 rating, matching the original specification. The transition frequency reduction from 250 MHz to 100–200 MHz is acceptable for general-purpose switching applications operating below 100 MHz.

BC859C,215 (Nexperia USA Inc.) provides an alternative with Active status and automotive-grade qualification (AEC-Q101), suitable for applications requiring enhanced reliability documentation.

For Higher Current Applications (1.5 A to 3 A):

The Rohm Semiconductor 2SB1695 and 2SB1706/2SB1708 series offer increased collector current capability while maintaining 30 V Vceo. These parts are Active status with RoHS3 compliance. The 2SB1695TL and 2SB1706TL employ SC-96 packaging, requiring PCB layout modifications from the original SOT-23-3 footprint.

Compliance Verification:

All recommended substitutes maintain RoHS3 compliance and MSL 1 rating. No additional qualification testing is required for parts within the same electrical specification band.

Frequently Asked Questions (FAQ)

Q1: Can BC858C-7-F replace BC859CE6327HTSA1 in all applications?

BC858C-7-F meets the core electrical specifications: 100 mA collector current, 30 V Vceo, 650 mV Vce saturation, and 420 hFE minimum. The transition frequency is 200 MHz versus 250 MHz in the original part. This substitution is valid for applications with signal frequencies below 100 MHz. For circuits operating near 250 MHz, frequency-dependent performance must be evaluated against actual circuit requirements.

Q2: What is the difference between BC858CE6327HTSA1 and BC858CE6433HTMA1?

Both parts are Infineon Technologies products with identical electrical specifications. The difference lies in packaging format: BC858CE6327HTSA1 is supplied in Cut Tape (CT), while BC858CE6433HTMA1 is supplied in Tape & Reel (TR). Both are Last Time Buy status. Selection depends on assembly equipment compatibility and volume requirements.

Q3: Are the Rohm Semiconductor 2SB1695/2SB1706/2SB1708 series suitable for 100 mA applications?

Yes. These parts are rated for 1.5 A to 3 A collector current, making them suitable for 100 mA operation. However, they employ different packaging (SC-96 vs. SOT-23-3), requiring PCB redesign. Use these parts only when higher current capability is required or when SOT-23-3 alternatives are unavailable.

Q4: Does BC859C,215 have any advantages over other substitutes?

BC859C,215 is manufactured by Nexperia USA Inc. with Active product status and AEC-Q101 automotive qualification. This part is suitable for automotive and industrial applications requiring enhanced reliability documentation. Electrical performance is equivalent to other 100 mA alternatives.

Q5: What packaging considerations apply to substitute selection?

The BC859CE6327HTSA1 uses SOT-23-3 (TO-236-3, SC-59) surface mount package. Direct substitutes BC858C-7-F, BC858CLT1G, BC859C,215, and NSVBC858CLT1G maintain this package, requiring no PCB modifications. The Rohm Semiconductor 2SB1695TL, 2SB1706TL, and 2SB1708TL use SC-96 packaging, necessitating footprint redesign.

Q6: Are all substitutes RoHS3 compliant?

All recommended substitutes are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the original BC859CE6327HTSA1 specification.

Q7: Which substitute offers the best long-term availability?

BC858C-7-F (Diodes Incorporated), BC858CLT1G (onsemi), BC859C,215 (Nexperia USA Inc.), and the Rohm Semiconductor 2SB1695/2SB1706/2SB1708 series all maintain Active product status, ensuring continued manufacturing and supply chain support. The original BC859CE6327HTSA1 is Last Time Buy, making these alternatives essential for new designs and long-term production.

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