BC858CE6327HTSA1 Equivalent & Substitute Parts

Part Overview

The BC858CE6327HTSA1 is a PNP bipolar junction transistor manufactured by Infineon Technologies, designed for general-purpose switching and amplification applications in surface mount configurations. This device operates at 30 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and transition frequency of 250 MHz. The part is classified as Last Time Buy status, indicating discontinued production with limited inventory availability. Identification of equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain flexibility, and support long-term product support for applications utilizing this transistor.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Collector Current (Max)	100	mA
Collector-Emitter Breakdown Voltage (Max)	30	V
Vce Saturation (Max)	650	mV @ 5mA, 100mA
Collector Cutoff Current (Max)	15	nA
DC Current Gain (hFE Min)	420	@ 2mA, 5V
Power Dissipation (Max)	330	mW
Transition Frequency	250	MHz
Operating Temperature (Max)	150	°C
Package Type	SOT-23-3 (TO-236-3, SC-59)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the BC858CE6327HTSA1 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: PNP configuration required
Collector Current (Max): 100 mA minimum
Collector-Emitter Breakdown Voltage: 30 V minimum
Vce Saturation: 650 mV maximum @ specified bias conditions
DC Current Gain (hFE): 420 minimum @ 2mA, 5V
Package Type: SOT-23-3 (TO-236-3, SC-59) surface mount
RoHS3 Compliance required
Moisture Sensitivity Level: 1 (Unlimited)

Substitution Categories:

Category 1: Parametric Equivalents (Identical Electrical Specifications) Parts meeting all primary criteria with identical or superior electrical performance within the same package family. These parts are direct functional replacements with no circuit redesign required.

Category 2: Direct Manufacturer Alternatives (Active Status) Parts from alternative manufacturers offering identical or superior specifications with active product status, providing long-term supply assurance and design continuity.

Category 3: Manufacturer Recommended Upgrades (Enhanced Performance) Parts with superior current handling or power dissipation capabilities, suitable for applications requiring increased design margin or higher performance specifications.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Ic (Max) mA	Vce(br) V	Vce Sat mV	hFE (Min)	Power mW	Freq MHz	Package	Status
BC858CE6327HTSA1	Infineon	100	30	650	420	330	250	SOT-23-3	Last Time Buy
BC858CE6433HTMA1	Infineon	100	30	650	420	330	250	SOT-23-3	Last Time Buy
BC859CE6327HTSA1	Infineon	100	30	650	420	330	250	SOT-23-3	Last Time Buy
BC858C-7-F	Diodes Incorporated	100	30	650	420	300	200	SOT-23-3	Active
BC858CLT1G	onsemi	100	30	650	420	300	100	SOT-23-3	Active
BC859C,215	Nexperia USA Inc.	100	30	650	420	250	100	SOT-23-3	Active
NSVBC858CLT1G	onsemi	100	30	650	420	300	100	SOT-23-3	Active
2SB1695KT146	Rohm Semiconductor	1500	30	370	270	200	280	SOT-23-3	Active
2SB1695TL	Rohm Semiconductor	1500	30	370	270	500	280	SC-96	Active
2SB1706TL	Rohm Semiconductor	2000	30	370	270	500	280	SC-96	Active
2SB1708TL	Rohm Semiconductor	3000	30	30	270	500	200	SC-96	Active

Engineering Selection Recommendations

For Direct Replacement (No Circuit Modification Required):

The BC858C-7-F (Diodes Incorporated) and BC859C,215 (Nexperia USA Inc.) are recommended as primary substitutes. Both parts maintain identical collector current, breakdown voltage, and saturation voltage specifications. The BC858C-7-F offers active product status with 453,200 units in stock, providing superior supply continuity compared to the Last Time Buy status of the original part. The BC859C,215 includes AEC-Q101 automotive qualification, suitable for applications requiring automotive-grade reliability.

The onsemi parts BC858CLT1G and NSVBC858CLT1G provide active status with lower transition frequency (100 MHz) but maintain all critical electrical parameters. These parts are suitable for applications where the 250 MHz specification is not required.

For Enhanced Performance Applications:

The Rohm Semiconductor 2SB1695 series (KT146 and TL variants) offer superior current handling (1.5 A) and improved saturation voltage (370 mV) while maintaining 30 V breakdown voltage. These parts are suitable for applications requiring increased design margin or higher current capacity. The 2SB1706TL and 2SB1708TL variants provide even higher current ratings (2 A and 3 A respectively) for power amplification stages.

Compliance Considerations:

All substitute parts maintain ROHS3 compliance, Moisture Sensitivity Level 1 (Unlimited), and REACH unaffected status, ensuring regulatory compatibility with the original specification.

Frequently Asked Questions (FAQ)

Q: Can BC858C-7-F directly replace BC858CE6327HTSA1 without circuit modification?

A: Yes. The BC858C-7-F maintains identical collector current (100 mA), breakdown voltage (30 V), saturation voltage (650 mV), and current gain (420 minimum) specifications. The transition frequency is reduced from 250 MHz to 200 MHz, which does not affect functionality in applications not requiring the full 250 MHz bandwidth. Both parts use SOT-23-3 packaging with identical pinout.

Q: What is the difference between BC858CE6327HTSA1 and BC859CE6327HTSA1?

A: Both parts are Infineon PNP transistors with identical electrical specifications: 100 mA collector current, 30 V breakdown voltage, 650 mV saturation voltage, and 250 MHz transition frequency. The primary difference is the base product number designation (BC858 versus BC859), which may reflect internal manufacturing process variations. Both are Last Time Buy status.

Q: Are the Rohm 2SB1695 series parts suitable as direct replacements?

A: The 2SB1695 series parts exceed the original specification in collector current (1.5 A versus 100 mA) and offer improved saturation voltage (370 mV versus 650 mV). These parts are suitable for applications requiring higher current capacity or improved performance margin. However, the lower DC current gain (270 versus 420) must be evaluated for bias circuit compatibility. The 2SB1695KT146 maintains SOT-23-3 packaging; the 2SB1695TL uses SC-96 packaging and requires PCB layout modification.

Q: What is the significance of Last Time Buy status for BC858CE6327HTSA1?

A: Last Time Buy status indicates the manufacturer has discontinued production and will not accept new orders after a specified date. Existing inventory (102,300 units) represents the final available supply. Transition to active-status alternatives such as BC858C-7-F (Diodes Incorporated, 453,200 units) or BC859C,215 (Nexperia, 16,456 units) is recommended for long-term design continuity.

Q: Can onsemi BC858CLT1G replace BC858CE6327HTSA1 in high-frequency applications?

A: The BC858CLT1G maintains all critical DC parameters (100 mA, 30 V, 650 mV saturation, 420 hFE) but operates at 100 MHz transition frequency compared to 250 MHz for the original part. This part is suitable for applications operating below 100 MHz. Applications requiring the full 250 MHz bandwidth should use BC858C-7-F (200 MHz) or the original Infineon parts.

Q: Are there packaging differences between substitute parts?

A: Most direct substitutes (BC858C-7-F, BC858CLT1G, BC859C,215, NSVBC858CLT1G) use SOT-23-3 packaging with identical pinout to BC858CE6327HTSA1. The Rohm 2SB1695TL, 2SB1706TL, and 2SB1708TL series use SC-96 packaging, requiring PCB layout modification. Verify package compatibility before design implementation.

Q: What compliance certifications apply to substitute parts?

A: All listed substitute parts maintain ROHS3 compliance, Moisture Sensitivity Level 1 (Unlimited), and REACH unaffected status. The BC859C,215 (Nexperia) includes AEC-Q101 automotive qualification. Verify specific compliance requirements for your application before final part selection.

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