BC858C-7-F Equivalent & Substitute Parts

Part Overview

The BC858C-7-F is a PNP bipolar junction transistor manufactured by Diodes Incorporated, designed for general-purpose switching and amplification applications. This surface mount device operates at 30 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and 300 mW power dissipation. The part is Active status and RoHS3 compliant, making it suitable for modern electronic designs requiring environmental compliance. Equivalent and substitute parts are identified based on matching electrical characteristics, package compatibility, and operational parameters to ensure functional interchangeability in circuit applications.

Key Parameters

Parameter	BC858C-7-F Value	Unit
Transistor Type	PNP	—
Collector Current (Ic) Max	100	mA
Collector-Emitter Breakdown Voltage (Max)	30	V
Vce Saturation @ Ib, Ic	650 mV @ 5 mA, 100 mA	—
DC Current Gain (hFE) Min @ Ic, Vce	420 @ 2 mA, 5 V	—
Power Dissipation (Max)	300	mW
Transition Frequency	200	MHz
Operating Temperature Range	-65 to 150	°C
Package / Case	SOT-23-3	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the BC858C-7-F are grouped into two categories based on electrical and mechanical compatibility:

Category 1: Direct Electrical Equivalents (100 mA Class) These parts maintain the same collector current rating (100 mA), collector-emitter breakdown voltage (30 V), and saturation voltage characteristics. They are packaged in SOT-23-3 or equivalent surface mount packages and support the same base product functionality. Substitution within this category is based on matching:

Collector current: 100 mA
Breakdown voltage: 30 V
Vce saturation: 650 mV @ 5 mA, 100 mA
DC current gain: 420 @ 2 mA, 5 V
Package: SOT-23-3 or TO-236-3

Category 2: Higher Current Capability (1.0 A to 2.0 A Class) These parts exceed the collector current specification of the BC858C-7-F but maintain the 30 V breakdown voltage and surface mount packaging. These are suitable for applications requiring higher current handling while preserving voltage and thermal characteristics. Substitution in this category is based on:

Collector current: 1.0 A to 2.0 A (higher than original)
Breakdown voltage: 30 V
Package: Surface mount (SOT-23-3, SMT3, or TSMT3)
Operating temperature: 150°C maximum

Parameter Comparison

Part Number	Manufacturer	Ic Max (mA)	Vce Breakdown (V)	Vce Sat @ Ib, Ic	hFE Min @ Ic, Vce	Power Max (mW)	Freq (MHz)	Temp Range (°C)	Package
BC858C-7-F	Diodes Inc.	100	30	650 mV @ 5 mA, 100 mA	420 @ 2 mA, 5 V	300	200	-65 to 150	SOT-23-3
BC858CLT1G	onsemi	100	30	650 mV @ 5 mA, 100 mA	420 @ 2 mA, 5 V	300	100	-55 to 150	SOT-23-3
BC859C,215	Nexperia USA Inc.	100	30	650 mV @ 5 mA, 100 mA	420 @ 2 mA, 5 V	250	100	-55 to 150	TO-236AB
NSVBC858CLT1G	onsemi	100	30	650 mV @ 5 mA, 100 mA	420 @ 2 mA, 5 V	300	100	-55 to 150	SOT-23-3
2SB1695KT146	Rohm Semiconductor	1500	30	370 mV @ 50 mA, 1 A	270 @ 100 mA, 2 V	200	280	-55 to 150	SMT3
2SB1695TL	Rohm Semiconductor	1500	30	370 mV @ 50 mA, 1 A	270 @ 100 mA, 2 V	500	280	-55 to 150	TSMT3
2SB1706TL	Rohm Semiconductor	2000	30	370 mV @ 75 mA, 1.5 A	270 @ 200 mA, 2 V	500	280	-55 to 150	TSMT3
2SB1710TL	Rohm Semiconductor	1000	30	350 mV @ 25 mA, 500 mA	270 @ 100 mA, 2 V	500	320	-55 to 150	TSMT3
2STR2230	STMicroelectronics	1500	30	800 mV @ 200 mA, 2 A	170 @ 500 mA, 2 V	500	100	-65 to 150	SOT-23-3
BC858A RFG	Taiwan Semiconductor	100	30	650 mV @ 5 mA, 100 mA	125 @ 2 mA, 5 V	200	100	-55 to 150	SOT-23
BC858ALT1G	onsemi	100	30	650 mV @ 5 mA, 100 mA	125 @ 2 mA, 5 V	300	100	-55 to 150	SOT-23-3

Engineering Selection Recommendations

For Direct Substitution (100 mA Collector Current Class):

BC858CLT1G (onsemi) and NSVBC858CLT1G (onsemi) are direct electrical equivalents to BC858C-7-F. Both maintain 100 mA collector current, 30 V breakdown voltage, and identical saturation voltage characteristics. BC858CLT1G is available in Cut Tape packaging with 35,300 units in stock, while NSVBC858CLT1G is available in Tape & Reel packaging with 6,483 units in stock. Both are RoHS3 compliant and Active status products.

BC859C,215 (Nexperia USA Inc.) is electrically equivalent with matching collector current and breakdown voltage. This part is Automotive grade with AEC-Q101 qualification, suitable for applications requiring automotive-level reliability. Power dissipation is 250 mW compared to 300 mW in the original part. Available in Tape & Reel packaging with 16,456 units in stock.

BC858A RFG (Taiwan Semiconductor Corporation) and BC858ALT1G (onsemi) are compatible substitutes with lower DC current gain (125 vs. 420 @ 2 mA, 5 V) and reduced power dissipation (200 mW for BC858A RFG). These parts are suitable for applications where lower gain is acceptable.

For Higher Current Applications (1.0 A to 2.0 A Collector Current Class):

2SB1710TL (Rohm Semiconductor) provides 1.0 A collector current capability with 30 V breakdown voltage and 500 mW power dissipation. Transition frequency is 320 MHz. This part is suitable for applications requiring higher current handling than the original 100 mA specification. Available with 15,500 units in stock.

2SB1695TL (Rohm Semiconductor) provides 1.5 A collector current with 500 mW power dissipation and 280 MHz transition frequency. Available with 99,300 units in stock.

2SB1706TL (Rohm Semiconductor) provides 2.0 A collector current with 500 mW power dissipation and 280 MHz transition frequency. Available with 1,852 units in stock.

2STR2230 (STMicroelectronics) provides 1.5 A collector current in SOT-23-3 package with operating temperature range matching the original part (-65°C to 150°C). Available with 209,400 units in stock.

All substitute parts listed are RoHS3 compliant, REACH unaffected, and Active status products.

Frequently Asked Questions (FAQ)

Q: Can BC858CLT1G be used as a direct replacement for BC858C-7-F?

A: Yes. BC858CLT1G maintains identical collector current (100 mA), collector-emitter breakdown voltage (30 V), and saturation voltage characteristics. Both are packaged in SOT-23-3 and are RoHS3 compliant. The primary difference is transition frequency (100 MHz vs. 200 MHz) and operating temperature range (-55°C to 150°C vs. -65°C to 150°C). Selection depends on application frequency requirements and minimum operating temperature.

Q: What is the difference between BC858C-7-F and 2SB1710TL?

A: 2SB1710TL is rated for 1.0 A collector current compared to 100 mA in BC858C-7-F. Both maintain 30 V breakdown voltage. 2SB1710TL is packaged in TSMT3 (SC-96) rather than SOT-23-3. This part is suitable for applications requiring higher current handling. Saturation voltage is lower (350 mV @ 25 mA, 500 mA vs. 650 mV @ 5 mA, 100 mA), indicating improved performance at higher currents.

Q: Is BC859C,215 suitable for automotive applications?

A: Yes. BC859C,215 is Automotive grade with AEC-Q101 qualification. It maintains the same electrical characteristics as BC858C-7-F (100 mA, 30 V, 650 mV saturation voltage) and is suitable for automotive-level reliability requirements. Power dissipation is 250 mW compared to 300 mW in the original part.

Q: Can I use 2STR2230 in place of BC858C-7-F?

A: 2STR2230 is electrically compatible for voltage and package (SOT-23-3), but provides 1.5 A collector current capability versus 100 mA. This part is suitable for applications requiring higher current handling. Operating temperature range matches the original (-65°C to 150°C). Saturation voltage is higher (800 mV @ 200 mA, 2 A), and DC current gain is lower (170 @ 500 mA, 2 V). Selection depends on circuit current requirements.

Q: What packaging options are available for substitutes?

A: Direct electrical equivalents (100 mA class) are available in SOT-23-3 and TO-236AB packages. Higher current parts (1.0 A to 2.0 A class) are available in SMT3 and TSMT3 packages. All packages are surface mount types suitable for automated assembly. Package selection depends on PCB layout and thermal management requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant and REACH unaffected, meeting modern environmental compliance requirements.

Q: What is the significance of transition frequency differences?

A: Transition frequency (fT) indicates the maximum frequency at which the transistor maintains useful gain. BC858C-7-F operates at 200 MHz, while most substitutes operate at 100 MHz to 320 MHz. For applications operating below 100 MHz, lower transition frequency substitutes are suitable. For applications requiring higher frequency performance, parts with 280 MHz or 320 MHz transition frequency are recommended.

Q: Can BC858A RFG replace BC858C-7-F?

A: BC858A RFG is electrically compatible for voltage and current ratings (100 mA, 30 V). However, DC current gain is significantly lower (125 @ 2 mA, 5 V vs. 420 @ 2 mA, 5 V). This part is suitable only for applications where lower gain is acceptable. Power dissipation is also reduced to 200 mW.

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