BC858BWT1 Equivalent & Substitute Parts

Part Overview

The BC858BWT1 is a PNP bipolar junction transistor manufactured by onsemi, housed in a surface mount SC-70 (SOT-323) package. This component is rated for 30 V collector-emitter breakdown voltage, 100 mA maximum collector current, and 150 mW power dissipation. The BC858BWT1 is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and procurement continuity.

Substiute Parts

BC858BWT1
onsemiIn Stock: 3322BC858BWT1 Datasheet
BC858BWT1
Current Part
BC858BWT1G
onsemiIn Stock: 39388BC858BWT1G Datasheet
BC858BWT1G
Parametric Equivalent
BC858BW-7-F
Diodes IncorporatedIn Stock: 10617BC858BW-7-F Datasheet
BC858BW-7-F
Direct
BC859BW,115
Nexperia USA Inc.In Stock: 693BC859BW,115 Datasheet
BC859BW,115
Direct
BC859BW,135
Nexperia USA Inc.In Stock: 1071BC859BW,135 Datasheet
BC859BW,135
Upgrade
BC858BE6327HTSA1
Infineon TechnologiesIn Stock: 1115BC858BE6327HTSA1 Datasheet
BC858BE6327HTSA1
Similar
BC858BWT106
Rohm SemiconductorIn Stock: 5391BC858BWT106 Datasheet
BC858BWT106
Similar
BC858CW-7-F
Diodes IncorporatedIn Stock: 30472BC858CW-7-F Datasheet
BC858CW-7-F
Similar
BC858W,115
Nexperia USA Inc.In Stock: 2498BC858W,115 Datasheet
BC858W,115
Similar
BC858W,135
NXP USA Inc.In Stock: 20436BC858W,135 Datasheet
BC858W,135
Similar
BC859B,215
NXP SemiconductorsIn Stock: 9498754BC859B,215 Datasheet
BC859B,215
Similar
PMSS3906,115
NXP SemiconductorsIn Stock: 18176PMSS3906,115 Datasheet
PMSS3906,115
Similar
BC858BW-HF
Comchip TechnologyIn Stock: 957BC858BW-HF Datasheet
BC858BW-HF
Parametric Equivalent

Key Parameters

Parameter BC858BWT1 Value Unit
Transistor Type PNP
Current - Collector (Ic) Max 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 650 mV @ 5 mA, 100 mA
Current - Collector Cutoff (Max) 15 nA
DC Current Gain (hFE) Min @ Ic, Vce 220 @ 2 mA, 5 V
Power - Max 150 mW
Frequency - Transition 100 MHz
Operating Temperature −55 to 150 °C
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
RoHS Status RoHS non-compliant
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the BC858BWT1 is determined by strict equivalence across the following critical parameters:

  • Transistor Type: PNP configuration required
  • Current Rating: 100 mA maximum collector current
  • Voltage Rating: 30 V collector-emitter breakdown voltage
  • Saturation Characteristics: Vce saturation at specified bias conditions
  • Current Gain: DC current gain (hFE) minimum specification
  • Power Dissipation: Maximum power rating capability
  • Transition Frequency: Operating frequency capability
  • Package Compatibility: Surface mount SC-70 or SOT-323 footprint
  • Temperature Range: Operating temperature limits

Substitute parts are grouped into three categories:

Parametric Equivalent: Parts with identical electrical specifications and active product status, differing only in packaging format (Tape & Reel vs. Bulk).

Direct Manufacturer Equivalent: Parts from alternative manufacturers meeting all core electrical parameters with potential enhancements in power rating or transition frequency while maintaining backward compatibility.

Similar Alternative: Parts with enhanced specifications (higher power rating, transition frequency, or current gain) that operate within the same application envelope but offer improved performance margins.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(br) V Vce Sat mV hFE Min Power mW Freq MHz Temp °C Package Status RoHS
BC858BWT1 onsemi 100 30 650 220 150 100 −55 to 150 SC-70 Obsolete Non-compliant
BC858BWT1G onsemi 100 30 650 220 150 100 −55 to 150 SC-70 Active ROHS3
BC858BW-7-F Diodes Incorporated 100 30 650 220 200 200 −65 to 150 SOT-323 Active ROHS3
BC859BW,115 Nexperia USA Inc. 100 30 650 220 200 100 −55 to 150 SOT-323 Active ROHS3
BC859BW,135 Nexperia USA Inc. 100 30 650 220 200 100 −55 to 150 SOT-323 Active ROHS3
BC858BE6327HTSA1 Infineon Technologies 100 30 650 220 330 250 −55 to 150 SOT-23 Last Time Buy ROHS3
BC858BWT106 Rohm Semiconductor 100 30 650 210 350 250 −55 to 150 SC-70 Active ROHS3
BC858CW-7-F Diodes Incorporated 100 30 650 420 200 200 −65 to 150 SOT-323 Active ROHS3
BC858W,115 Nexperia USA Inc. 100 30 600 125 200 100 −55 to 150 SOT-323 Active ROHS3
BC858W,135 NXP USA Inc. 100 30 600 125 200 100 −55 to 150 SOT-323 Active
BC859B,215 NXP Semiconductors 100 30 650 220 250 100 −55 to 150 SOT-23 Active

Engineering Selection Recommendations

Primary Recommendation: BC858BWT1G

The BC858BWT1G from onsemi is the direct parametric equivalent with identical electrical specifications. This part maintains the original 150 mW power rating and 100 MHz transition frequency. The BC858BWT1G is in active product status with ROHS3 compliance, providing the most direct replacement path. Packaging is Tape & Reel format, suitable for automated assembly processes.

Secondary Recommendation: BC858BW-7-F

The BC858BW-7-F from Diodes Incorporated provides enhanced performance with 200 mW power dissipation and 200 MHz transition frequency while maintaining all core electrical parameters. This part is active and ROHS3 compliant. The extended operating temperature range (−65 to 150°C) accommodates broader environmental requirements. SOT-323 package footprint is compatible with SC-70 land patterns.

Tertiary Recommendation: BC859BW,115 or BC859BW,135

Both Nexperia parts (BC859BW,115 and BC859BW,135) meet all electrical specifications with 200 mW power rating. These parts carry AEC-Q101 automotive qualification and are ROHS3 compliant. Selection between the two variants depends on packaging requirements (Tape & Reel vs. Bulk). These parts are suitable for automotive-grade applications.

Alternative for Enhanced Performance: BC858BWT106

The BC858BWT106 from Rohm Semiconductor offers 350 mW power dissipation and 250 MHz transition frequency. This part is active and ROHS3 compliant. The UMT3 package provides enhanced thermal performance. This option is appropriate when design margins for power dissipation or frequency response require improvement.

Not Recommended: BC858BE6327HTSA1

The BC858BE6327HTSA1 from Infineon is classified as Last Time Buy, indicating discontinued production. While specifications are enhanced (330 mW, 250 MHz), the product status precludes long-term procurement viability.

Frequently Asked Questions (FAQ)

Q: Can BC858BWT1G directly replace BC858BWT1 without circuit modification?

A: Yes. The BC858BWT1G is a parametric equivalent with identical electrical specifications. The only difference is packaging format (Tape & Reel vs. Bulk) and product status (Active vs. Obsolete). No circuit changes are required.

Q: What is the difference between BC858BW-7-F and BC858BWT1?

A: The BC858BW-7-F offers enhanced specifications: 200 mW power rating versus 150 mW, and 200 MHz transition frequency versus 100 MHz. All core electrical parameters (voltage, current, saturation characteristics) remain identical. The BC858BW-7-F is backward compatible and provides additional performance margin.

Q: Are BC859BW,115 and BC859BW,135 interchangeable?

A: Both parts are electrically identical. The difference is packaging format: BC859BW,115 is Tape & Reel, while BC859BW,135 is Bulk. Selection depends on assembly process requirements. Both carry AEC-Q101 automotive qualification.

Q: Can I use BC858BE6327HTSA1 as a long-term replacement?

A: No. Although specifications are enhanced, this part is classified as Last Time Buy, indicating end-of-life status. Procurement will become unavailable. Use BC858BWT1G, BC858BW-7-F, or BC858BWT106 for sustained supply.

Q: What is the package compatibility between SC-70 and SOT-323?

A: SC-70 and SOT-323 are equivalent package designations for the same physical form factor. Land patterns are compatible. Parts specified as either SC-70 or SOT-323 are mechanically and electrically interchangeable on the same PCB footprint.

Q: Does BC858CW-7-F have higher current gain than BC858BWT1?

A: Yes. The BC858CW-7-F specifies hFE minimum of 420 at 2 mA, 5 V, compared to 220 for BC858BWT1. This higher gain may affect circuit biasing and should be evaluated in the specific application context.

Q: Are all recommended substitutes ROHS3 compliant?

A: All active substitutes listed (BC858BWT1G, BC858BW-7-F, BC859BW,115, BC859BW,135, BC858BWT106, BC858CW-7-F, BC858W,115) are ROHS3 compliant. The original BC858BWT1 is RoHS non-compliant.

Q: What is the temperature range difference between BC858BW-7-F and BC858BWT1?

A: BC858BW-7-F operates from −65 to 150°C, while BC858BWT1 operates from −55 to 150°C. The BC858BW-7-F provides 10°C additional low-temperature capability, beneficial for applications in extreme cold environments.

Q: Can BC858W,115 and BC858W,135 be used interchangeably with BC858BWT1?

A: These parts are electrically compatible but have lower hFE minimum (125 vs. 220). They are suitable for applications where lower current gain is acceptable. Both are active and ROHS3 compliant. Verify circuit biasing requirements before substitution.

Q: Which substitute offers the best thermal performance?

A: BC858BWT106 from Rohm Semiconductor offers the highest power dissipation rating at 350 mW and uses the UMT3 package, which provides enhanced thermal characteristics. This part is recommended when thermal margin is critical.

Request Quote (Ships tomorrow)