BC858BWH6327XTSA1 Equivalent & Substitute Parts

Part Overview

The BC858BWH6327XTSA1 is a PNP bipolar junction transistor manufactured by Infineon Technologies, specified for 30 V collector-emitter breakdown voltage and 100 mA maximum collector current in a surface mount SC-70/SOT-323 package. This part is classified as obsolete, necessitating identification of active equivalent alternatives that maintain electrical and mechanical compatibility for new designs and production continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	30	V
Current - Collector (Ic) (Max)	100	mA
Vce Saturation (Max) @ Ib, Ic	650 mV @ 5 mA, 100 mA	—
Current - Collector Cutoff (Max)	15	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	220 @ 2 mA, 5 V	—
Power - Max	250	mW
Frequency - Transition	250	MHz
Operating Temperature (TJ)	150	°C
Package / Case	SC-70, SOT-323	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the BC858BWH6327XTSA1 is determined by strict equivalence in the following electrical and mechanical parameters:

Critical Matching Parameters:

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Vce Saturation (Max) @ Ib, Ic: 650 mV @ 5 mA, 100 mA
Current - Collector Cutoff (Max): 15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2 mA, 5 V (or higher)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant

Allowable Variations:

Power dissipation may be equal to or greater than 250 mW
Frequency - Transition may be equal to or greater than 250 MHz
Operating temperature range may be wider than the specified maximum of 150°C
Product status may transition from obsolete to active

Substitute parts are grouped into two categories based on DC Current Gain specification:

Group A (hFE Min = 220 @ 2 mA, 5 V): Parts maintaining the original gain specification

BC858BW-7-F (Diodes Incorporated)
BC858BWT1G (onsemi)
BC858BWT106 (Rohm Semiconductor)
BC858BW-TP (Micro Commercial Co)

Group B (hFE Min = 125 or 420 @ 2 mA, 5 V): Parts with different gain specifications but meeting all other critical parameters

BC859BW,135 (Nexperia USA Inc.) — hFE Min = 220
BC858A-TP (Micro Commercial Co) — hFE Min = 125
BC858AWT1G (onsemi) — hFE Min = 125
BC858C-TP (Micro Commercial Co) — hFE Min = 420
BC858CW-7-F (Diodes Incorporated) — hFE Min = 420
BC858W,115 (Nexperia USA Inc.) — hFE Min = 125

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic (Max) mA	Vce Breakdown (Max) V	Vce Sat (Max) mV	hFE (Min) @ 2mA, 5V	Power (Max) mW	Freq (Max) MHz	Temp (Max) °C	Package
BC858BWH6327XTSA1	Infineon Technologies	Obsolete	100	30	650	220	250	250	150	SOT-323
BC858BW-7-F	Diodes Incorporated	Active	100	30	650	220	200	200	150	SOT-323
BC858BWT1G	onsemi	Active	100	30	650	220	150	100	150	SOT-323
BC859BW,135	Nexperia USA Inc.	Active	100	30	650	220	200	100	150	SOT-323
BC858A-TP	Micro Commercial Co	Active	100	30	650	125	200	100	150	SOT-23
BC858AWT1G	onsemi	Active	100	30	650	125	150	100	150	SOT-323
BC858BW-TP	Micro Commercial Co	Active	100	30	650	220	150	100	150	SOT-323
BC858BWT106	Rohm Semiconductor	Active	100	30	650	210	350	250	150	SOT-323
BC858C-TP	Micro Commercial Co	Active	100	30	650	420	150	200	150	SOT-23
BC858CW-7-F	Diodes Incorporated	Active	100	30	650	420	200	200	150	SOT-323
BC858W,115	Nexperia USA Inc.	Active	100	30	650	125	200	100	150	SOT-323

Engineering Selection Recommendations

Primary Selection Criteria:

Product Status: All substitute parts listed are in active production status, eliminating obsolescence risk associated with the BC858BWH6327XTSA1.
Package Compatibility: Parts maintaining SOT-323 package are direct mechanical and electrical replacements without PCB layout modification:
- BC858BW-7-F
- BC858BWT1G
- BC859BW,135
- BC858AWT1G
- BC858BW-TP
- BC858BWT106
- BC858CW-7-F
- BC858W,115
Parts in SOT-23 package (BC858A-TP, BC858C-TP) require PCB footprint modification.
Compliance Status: All substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) rating, matching the original part specifications.
Electrical Performance Matching:
- Exact hFE Match (220 @ 2 mA, 5 V): BC858BW-7-F, BC858BWT1G, BC859BW,135, BC858BW-TP, BC858BWT106 provide direct electrical equivalence.
- Lower hFE (125 @ 2 mA, 5 V): BC858A-TP, BC858AWT1G, BC858W,115 are suitable for applications where higher base current drive is acceptable.
- Higher hFE (420 @ 2 mA, 5 V): BC858C-TP, BC858CW-7-F are suitable for applications requiring lower base current.
Power Dissipation: BC858BWT106 (350 mW) exceeds the original specification and is suitable for higher power applications. All other substitutes meet or approach the 250 mW specification.
Frequency Performance: BC858BWT106 maintains the 250 MHz transition frequency of the original part. Other substitutes operate at 100–200 MHz, which is acceptable for most low-frequency switching applications.

Recommended Substitutes (in order of preference):

First Choice: BC858BW-7-F (Diodes Incorporated) — Active status, SOT-323 package, matching hFE, established supply chain
Second Choice: BC858BWT1G (onsemi) — Active status, SOT-323 package, matching hFE, high inventory availability
Third Choice: BC858BWT106 (Rohm Semiconductor) — Active status, SOT-323 package, enhanced power rating, matching frequency performance

Frequently Asked Questions (FAQ)

Q1: Can BC858BWT1G replace BC858BWH6327XTSA1 in all applications?

A: BC858BWT1G is electrically compatible for applications operating at or below 100 MHz transition frequency. The original part specifies 250 MHz; therefore, BC858BWT1G is suitable for low-frequency switching and amplification circuits. For high-frequency applications requiring 250 MHz performance, BC858BWT106 is the appropriate substitute.

Q2: What is the difference between SOT-323 and SOT-23 packages?

A: Both are surface mount packages with three leads. SOT-323 (SC-70) is smaller and more compact than SOT-23 (SC-59/TO-236-3). Direct substitution between these packages requires PCB footprint redesign. Parts BC858A-TP and BC858C-TP use SOT-23 and are not pin-compatible with the original SOT-323 footprint.

Q3: Why do some substitutes have different hFE specifications?

A: DC current gain (hFE) varies across the BC858 family due to manufacturing process variations and design optimization. Lower hFE (125) requires higher base current for saturation; higher hFE (420) requires lower base current. Circuit design must account for these differences in bias network calculations.

Q4: Are all listed substitutes RoHS3 compliant?

A: Yes. All substitute parts listed maintain ROHS3 compliance and are suitable for applications requiring lead-free, halogen-free construction.

Q5: Which substitute offers the best inventory availability?

A: BC858BWT1G (onsemi) has the highest documented inventory at 39,300 pieces. BC858CW-7-F (Diodes Incorporated) has 30,400 pieces. Both are suitable for high-volume production requirements.

Q6: Can BC858CW-7-F be used as a direct replacement?

A: BC858CW-7-F is mechanically and electrically compatible (SOT-323 package, 30 V, 100 mA, 650 mV saturation). The primary difference is higher hFE (420 vs. 220), which reduces base current requirements. This is acceptable in most applications but requires verification of bias network performance.

Q7: What is the significance of the Vce Saturation specification?

A: Vce Saturation (650 mV @ 5 mA, 100 mA) defines the minimum voltage drop across the transistor when fully saturated. All listed substitutes maintain this specification, ensuring consistent switching performance and power dissipation characteristics.

Q8: Is BC859BW,135 suitable for automotive applications?

A: BC859BW,135 carries AEC-Q101 automotive qualification, making it suitable for automotive-grade applications. The original BC858BWH6327XTSA1 does not specify automotive qualification. Use BC859BW,135 only if automotive qualification is required by application specifications.

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