BC858B-QVL Equivalent & Substitute Parts

Part Overview

The BC858B-QVL is an active PNP bipolar junction transistor manufactured by Nexperia USA Inc. in TO-236AB surface mount packaging. This small-signal transistor operates at 30 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and 250 mW power dissipation. The device is qualified to AEC-Q101 automotive standards and carries ROHS3 compliance. Substitute parts are identified based on matching electrical specifications, package compatibility, and operational ratings to ensure direct functional replacement in circuit applications.

Key Parameters

Parameter	BC858B-QVL	Unit
Transistor Type	PNP	—
Collector Current (Max)	100	mA
Collector-Emitter Breakdown Voltage (Max)	30	V
Vce Saturation (Max) @ Ib, Ic	650 mV @ 5 mA, 100 mA	—
Collector Cutoff Current (Max)	15	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	220 @ 2 mA, 5 V	—
Power Dissipation (Max)	250	mW
Transition Frequency	100	MHz
Operating Temperature (Max)	150	°C
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Supplier Device Package	TO-236AB	—
Grade	Automotive	—
Qualification	AEC-Q101	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the BC858B-QVL are classified into two categories based on electrical and mechanical parameter alignment:

Parametric Equivalents share identical electrical specifications and package designations. These parts meet all key parameters: 100 mA maximum collector current, 30 V collector-emitter breakdown voltage, 650 mV Vce saturation at specified bias conditions, 220 minimum DC current gain at 2 mA and 5 V, 100 MHz transition frequency, and surface mount TO-236-3/SOT-23-3 packaging. Parametric equivalents include BC858B,215 (Nexperia USA Inc.), BC859B,215 (NXP Semiconductors), BC859B (Diotec Semiconductor), and BC858B (Taiwan Semiconductor Corporation).

Similar Parts maintain core electrical specifications but exhibit variations in secondary parameters such as power dissipation (200 mW versus 250 mW), collector cutoff current (100 nA versus 15 nA), DC current gain range (125 to 420 versus 220), or operating temperature range. Similar parts include BC858A RFG, BC858B RFG, and BC858C RFG (all Taiwan Semiconductor Corporation sources).

Substitution logic is based on the following critical parameters:

Transistor polarity (PNP)
Maximum collector current (100 mA)
Collector-emitter breakdown voltage (30 V)
Vce saturation characteristics (650 mV @ 5 mA, 100 mA)
DC current gain minimum (220 @ 2 mA, 5 V)
Transition frequency (100 MHz)
Surface mount package compatibility (TO-236-3, SC-59, SOT-23-3)

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce(br) V	Vce Sat mV	hFE (Min)	Power mW	Freq MHz	Package	Grade	AEC-Q101
BC858B-QVL	Nexperia USA Inc.	100	30	650	220	250	100	TO-236AB	Automotive	Yes
BC858B,215	Nexperia USA Inc.	100	30	650	220	250	100	TO-236AB	Automotive	Yes
BC859B,215	NXP Semiconductors	100	30	650	220	250	100	TO-236AB	Automotive	Yes
BC859B	Diotec Semiconductor	100	30	650	220	250	100	SOT-23-3	—	—
BC858B	Taiwan Semiconductor Corporation	100	30	650	220	200	100	SOT-23	—	—
BC858A RFG	Taiwan Semiconductor Corporation	100	30	650	125	200	100	SOT-23	—	—
BC858B RFG	Taiwan Semiconductor Corporation	100	30	650	220	200	100	SOT-23	—	—
BC858C RFG	Taiwan Semiconductor Corporation	100	30	650	420	200	100	SOT-23	—	—

Engineering Selection Recommendations

Parametric Equivalent Selection (Direct Replacement)

BC858B,215 (Nexperia USA Inc.) and BC859B,215 (NXP Semiconductors) are parametric equivalents with identical electrical specifications and TO-236AB packaging. Both parts carry AEC-Q101 automotive qualification and ROHS3 compliance, matching the original BC858B-QVL specification. These parts are suitable for direct substitution in automotive-grade applications requiring 30 V, 100 mA PNP transistor functionality.

BC859B (Diotec Semiconductor) is a parametric equivalent with matching electrical parameters and SOT-23-3 package designation. This part does not carry explicit automotive grade or AEC-Q101 qualification in the provided data. Use in automotive applications requires verification of Diotec qualification status against application requirements.

BC858B (Taiwan Semiconductor Corporation) is a parametric equivalent with matching electrical specifications. Power dissipation is rated at 200 mW versus 250 mW for the original part. Operating temperature range extends to −55°C, providing broader thermal coverage. This part is suitable for non-automotive applications or where reduced power dissipation is acceptable.

Similar Part Selection (Parameter Variations)

BC858A RFG, BC858B RFG, and BC858C RFG (Taiwan Semiconductor Corporation) are similar parts with reduced power dissipation (200 mW) and extended operating temperature range (−55°C to 150°C). DC current gain varies: BC858A RFG minimum 125, BC858B RFG minimum 220, BC858C RFG minimum 420. These parts are suitable for applications where power dissipation is not a limiting factor and where the specified DC current gain range is acceptable. These parts are not automotive-qualified and lack AEC-Q101 certification.

Compliance Considerations

All listed parts maintain ROHS3 compliance and REACH unaffected status. Automotive applications must use parts with explicit AEC-Q101 qualification: BC858B,215 or BC859B,215. Non-automotive applications may use any listed substitute provided electrical parameters align with circuit requirements.

Frequently Asked Questions (FAQ)

Q: Can BC858B,215 replace BC858B-QVL in automotive applications?

A: Yes. BC858B,215 is a parametric equivalent with identical electrical specifications (100 mA, 30 V, 250 mW, 100 MHz), matching TO-236AB package, and AEC-Q101 automotive qualification. Direct substitution is supported.

Q: What is the difference between BC858B and BC859B?

A: BC858B and BC859B are distinct part numbers within the Nexperia/NXP product line. Both are PNP transistors with identical electrical specifications (100 mA, 30 V, 250 mW, 100 MHz) and package designations. Substitution between these part numbers is supported based on parametric equivalence.

Q: Can Taiwan Semiconductor Corporation BC858B replace Nexperia BC858B-QVL?

A: Taiwan Semiconductor Corporation BC858B matches electrical specifications but is rated at 200 mW power dissipation versus 250 mW for the original part. This part lacks automotive grade and AEC-Q101 qualification. Use in automotive applications is not supported. Use in non-automotive applications is acceptable if 200 mW power dissipation meets circuit requirements.

Q: What does the ",215" suffix in BC858B,215 indicate?

A: The ",215" suffix is a Nexperia device code designation. BC858B,215 is a parametric equivalent to BC858B-QVL with identical electrical and package specifications. The suffix does not affect substitution compatibility.

Q: Are BC858A RFG, BC858B RFG, and BC858C RFG interchangeable?

A: These parts share identical electrical specifications except for DC current gain: BC858A RFG (125 min), BC858B RFG (220 min), BC858C RFG (420 min). All three are rated at 200 mW power dissipation and lack automotive qualification. Interchangeability depends on circuit bias requirements and gain tolerance. Higher gain parts (BC858C RFG) require lower base current for equivalent collector current.

Q: What is the difference between TO-236AB and SOT-23 packaging?

A: TO-236AB and SOT-23 are equivalent package designations for the same physical form factor (3-lead surface mount). Both refer to the same mechanical and electrical interface. Parts specified as TO-236AB or SOT-23 are mechanically and electrically compatible.

Q: Can I use BC859B (Diotec) in place of BC858B-QVL in automotive applications?

A: BC859B (Diotec) is a parametric equivalent with matching electrical specifications. However, the provided data does not confirm AEC-Q101 automotive qualification for the Diotec source. Automotive applications require explicit AEC-Q101 certification. Verify Diotec qualification status before use in automotive circuits.

Q: Why is power dissipation different between some substitutes?

A: Power dissipation ratings reflect maximum thermal capability under specified conditions. BC858B-QVL is rated at 250 mW, while Taiwan Semiconductor Corporation sources are rated at 200 mW. Both ratings support 100 mA collector current at 30 V. Use 200 mW rated parts only in applications where thermal dissipation does not exceed 200 mW.

Q: Are all listed parts ROHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 compliance status as provided in the input data.

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