BC858B-7-F Equivalent & Substitute Parts

Part Overview

The BC858B-7-F is a PNP bipolar junction transistor manufactured by Diodes Incorporated, designed for small-signal switching and amplification applications. This surface-mount device operates at 30 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and 300 mW power dissipation. The part is Active status and RoHS3 compliant, making it suitable for modern electronic designs requiring low-power PNP switching functionality in SOT-23-3 packaging.

Equivalent and substitute parts are identified when designs require alternative sourcing, higher current capacity, improved frequency response, or different packaging configurations while maintaining functional compatibility within the specified electrical parameters.

Substiute Parts

BC858B-7-F
Diodes IncorporatedIn Stock: 1956BC858B-7-F Datasheet
BC858B-7-F
Current Part
BC858B,215
Nexperia USA Inc.In Stock: 9197BC858B,215 Datasheet
BC858B,215
Direct
BC858BLT1G
onsemiIn Stock: 20298BC858BLT1G Datasheet
BC858BLT1G
Direct
BC859B,215
NXP SemiconductorsIn Stock: 9498754BC859B,215 Datasheet
BC859B,215
Direct
NSVBC858BLT1G
onsemiIn Stock: 68397NSVBC858BLT1G Datasheet
NSVBC858BLT1G
Direct
2SB1695KT146
Rohm SemiconductorIn Stock: 2671902SB1695KT146 Datasheet
2SB1695KT146
MFR Recommended
2SB1695TL
Rohm SemiconductorIn Stock: 994032SB1695TL Datasheet
2SB1695TL
MFR Recommended
2SB1706TL
Rohm SemiconductorIn Stock: 18752SB1706TL Datasheet
2SB1706TL
MFR Recommended
2SB1710TL
Rohm SemiconductorIn Stock: 156082SB1710TL Datasheet
2SB1710TL
MFR Recommended
2STR2230
STMicroelectronicsIn Stock: 2094722STR2230 Datasheet
2STR2230
MFR Recommended
30A02CH-TL-E
onsemiIn Stock: 430030A02CH-TL-E Datasheet
30A02CH-TL-E
MFR Recommended
BC858A RFG
Taiwan Semiconductor CorporationIn Stock: 9888BC858A RFG Datasheet
BC858A RFG
MFR Recommended
BC858ALT1G
onsemiIn Stock: 29194BC858ALT1G Datasheet
BC858ALT1G
MFR Recommended
BC858B RFG
Taiwan Semiconductor CorporationIn Stock: 10204BC858B RFG Datasheet
BC858B RFG
MFR Recommended
BC858B,235
Nexperia USA Inc.In Stock: 5797BC858B,235 Datasheet
BC858B,235
MFR Recommended
BC858B-TP
Micro Commercial CoIn Stock: 6613BC858B-TP Datasheet
BC858B-TP
MFR Recommended
BC858B_R1_00001
Panjit International Inc.In Stock: 6422BC858B_R1_00001 Datasheet
BC858B_R1_00001
MFR Recommended
BC858BE6327HTSA1
Infineon TechnologiesIn Stock: 1115BC858BE6327HTSA1 Datasheet
BC858BE6327HTSA1
MFR Recommended
BC858BE6433HTMA1
Infineon TechnologiesIn Stock: 778BC858BE6433HTMA1 Datasheet
BC858BE6433HTMA1
MFR Recommended
BC858BLT3G
onsemiIn Stock: 39922BC858BLT3G Datasheet
BC858BLT3G
MFR Recommended
BC858C RFG
Taiwan Semiconductor CorporationIn Stock: 10174BC858C RFG Datasheet
BC858C RFG
MFR Recommended
BC858CE6327HTSA1
Infineon TechnologiesIn Stock: 102403BC858CE6327HTSA1 Datasheet
BC858CE6327HTSA1
MFR Recommended
BC858CLT1G
onsemiIn Stock: 35395BC858CLT1G Datasheet
BC858CLT1G
MFR Recommended
BC858CLT3G
onsemiIn Stock: 65206BC858CLT3G Datasheet
BC858CLT3G
MFR Recommended
BC859C,215
Nexperia USA Inc.In Stock: 16490BC859C,215 Datasheet
BC859C,215
MFR Recommended
BC859C,235
Nexperia USA Inc.In Stock: 11014BC859C,235 Datasheet
BC859C,235
MFR Recommended
BC859CE6327HTSA1
Infineon TechnologiesIn Stock: 5745BC859CE6327HTSA1 Datasheet
BC859CE6327HTSA1
MFR Recommended
BCW29,215
Nexperia USA Inc.In Stock: 4146BCW29,215 Datasheet
BCW29,215
MFR Recommended
BCW30,215
Nexperia USA Inc.In Stock: 12330BCW30,215 Datasheet
BCW30,215
MFR Recommended
BCW30,235
Nexperia USA Inc.In Stock: 11012BCW30,235 Datasheet
BCW30,235
MFR Recommended
BCW30LT1G
onsemiIn Stock: 28655BCW30LT1G Datasheet
BCW30LT1G
MFR Recommended
BCW61B,215
Nexperia USA Inc.In Stock: 1297BCW61B,215 Datasheet
BCW61B,215
MFR Recommended
BCW61BE6327HTSA1
Infineon TechnologiesIn Stock: 844BCW61BE6327HTSA1 Datasheet
BCW61BE6327HTSA1
MFR Recommended
BCW61C,215
Nexperia USA Inc.In Stock: 15224BCW61C,215 Datasheet
BCW61C,215
MFR Recommended
BCW61C,235
Nexperia USA Inc.In Stock: 10895BCW61C,235 Datasheet
BCW61C,235
MFR Recommended
BCW61CE6327HTSA1
Infineon TechnologiesIn Stock: 1043BCW61CE6327HTSA1 Datasheet
BCW61CE6327HTSA1
MFR Recommended
BCW61D,215
Nexperia USA Inc.In Stock: 7261BCW61D,215 Datasheet
BCW61D,215
MFR Recommended
BCW61DE6327HTSA1
Infineon TechnologiesIn Stock: 891BCW61DE6327HTSA1 Datasheet
BCW61DE6327HTSA1
MFR Recommended
FMMT549
onsemiIn Stock: 5464FMMT549 Datasheet
FMMT549
MFR Recommended
MMBT3906 RFG
Taiwan Semiconductor CorporationIn Stock: 106496MMBT3906 RFG Datasheet
MMBT3906 RFG
MFR Recommended
MMBT3906,215
NXP SemiconductorsIn Stock: 8340MMBT3906,215 Datasheet
MMBT3906,215
MFR Recommended
MMBT3906-HF
Comchip TechnologyIn Stock: 3228MMBT3906-HF Datasheet
MMBT3906-HF
MFR Recommended
MMBT3906VL
Nexperia USA Inc.In Stock: 5296MMBT3906VL Datasheet
MMBT3906VL
MFR Recommended
MMBT589LT1G
onsemiIn Stock: 59313MMBT589LT1G Datasheet
MMBT589LT1G
MFR Recommended
NSS30100LT1G
onsemiIn Stock: 32091NSS30100LT1G Datasheet
NSS30100LT1G
MFR Recommended
NSVBC858CLT1G
onsemiIn Stock: 6543NSVBC858CLT1G Datasheet
NSVBC858CLT1G
MFR Recommended
NSVMMBT589LT1G
onsemiIn Stock: 4405NSVMMBT589LT1G Datasheet
NSVMMBT589LT1G
MFR Recommended
PBSS5130T,215
Nexperia USA Inc.In Stock: 9609PBSS5130T,215 Datasheet
PBSS5130T,215
MFR Recommended
PBSS5230T,215
Nexperia USA Inc.In Stock: 3750PBSS5230T,215 Datasheet
PBSS5230T,215
MFR Recommended
PMBT3906,235
NXP SemiconductorsIn Stock: 158778PMBT3906,235 Datasheet
PMBT3906,235
MFR Recommended
SBCW30LT1G
onsemiIn Stock: 877SBCW30LT1G Datasheet
SBCW30LT1G
MFR Recommended

Key Parameters

Parameter BC858B-7-F Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 30 V
Current - Collector (Ic) (Max) 100 mA
Power - Max 300 mW
Frequency - Transition 200 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15 nA
Operating Temperature Range -65 to 150 °C
Package / Case SOT-23-3
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the BC858B-7-F are categorized based on electrical parameter compatibility and functional equivalence. The primary substitution criteria are:

Critical Parameters for Substitution:

  • Transistor Type: PNP (mandatory)
  • Voltage - Collector Emitter Breakdown: 30 V minimum
  • Current - Collector (Ic): 100 mA minimum
  • Package compatibility: SOT-23-3 or equivalent surface-mount footprint
  • DC Current Gain (hFE): 220 minimum @ specified conditions
  • Vce Saturation: 650 mV maximum @ rated conditions
  • RoHS3 Compliance: Required for modern applications

Grouping Categories:

Group 1: Direct Electrical Equivalents (100 mA, 30 V, SOT-23-3) Parts that maintain identical or superior electrical specifications within the same package footprint. These include BC858B,215 (Nexperia), BC858BLT1G (onsemi), BC859B,215 (NXP), and NSVBC858BLT1G (onsemi). These parts are pin-compatible and functionally interchangeable with the BC858B-7-F.

Group 2: Higher Current Capacity Substitutes (1 A to 2 A, 30 V) Parts that exceed the 100 mA collector current specification while maintaining 30 V breakdown voltage. These include 2SB1695KT146, 2SB1695TL, 2SB1706TL, and 2SB1710TL from Rohm Semiconductor. These parts require footprint verification but provide enhanced current handling for applications requiring higher switching capacity.

Group 3: Enhanced Performance Substitutes (Higher Frequency, Improved Saturation) Parts offering superior frequency response or improved saturation characteristics. The 30A02CH-TL-E from onsemi provides 520 MHz transition frequency and 220 mV saturation voltage, suitable for high-speed switching applications.

Group 4: Intermediate Current Capacity (700 mA to 1.5 A, 30 V) Parts providing moderate current increases. The 2STR2230 from STMicroelectronics offers 1.5 A capacity in SOT-23-3 packaging with extended temperature range (-65°C to 150°C).

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce Breakdown (Max) V Power (Max) mW Frequency (Transition) MHz Vce Sat (Max) mV hFE (Min) Package Temp Range °C
BC858B-7-F Diodes Inc. 100 30 300 200 650 220 SOT-23-3 -65 to 150
BC858B,215 Nexperia 100 30 250 100 650 220 TO-236AB -40 to 150
BC858BLT1G onsemi 100 30 300 100 650 220 SOT-23-3 -55 to 150
BC859B,215 NXP 100 30 250 100 650 220 TO-236AB -40 to 150
NSVBC858BLT1G onsemi 100 30 300 100 650 220 SOT-23-3 -55 to 150
2SB1695KT146 Rohm 1500 30 200 280 370 270 SMT3 -40 to 150
2SB1695TL Rohm 1500 30 500 280 370 270 TSMT3 -40 to 150
2SB1706TL Rohm 2000 30 500 280 370 270 TSMT3 -40 to 150
2SB1710TL Rohm 1000 30 500 320 350 270 TSMT3 -40 to 150
2STR2230 STMicroelectronics 1500 30 500 100 800 170 SOT-23-3 -65 to 150
30A02CH-TL-E onsemi 700 30 700 520 220 200 3-CPH -40 to 150

Engineering Selection Recommendations

For Direct Pin-Compatible Replacement: BC858BLT1G (onsemi) and NSVBC858BLT1G (onsemi) provide direct substitution with identical SOT-23-3 packaging and electrical specifications. Both parts maintain 100 mA collector current, 30 V breakdown voltage, and 300 mW power dissipation. These parts are Active status and RoHS3 compliant. BC858BLT1G offers extended temperature range (-55°C to 150°C) compared to the original part's -65°C minimum.

For Automotive-Grade Applications: BC858B,215 (Nexperia) and BC859B,215 (NXP) are qualified to AEC-Q101 automotive standards. Both maintain electrical compatibility with 100 mA collector current and 30 V breakdown voltage. These parts are suitable for automotive switching applications requiring qualification documentation.

For Enhanced Current Capacity (1 A Range): 2SB1710TL (Rohm Semiconductor) provides 1 A collector current with 320 MHz transition frequency and 500 mW power dissipation. This part requires PCB footprint modification due to TSMT3 packaging but offers improved current handling for applications exceeding 100 mA requirements.

For Maximum Current Capacity (1.5 A to 2 A): 2SB1695TL and 2SB1706TL (Rohm Semiconductor) provide 1.5 A and 2 A collector current respectively, with 500 mW power dissipation and 280 MHz transition frequency. These parts require significant PCB layout changes due to TSMT3 packaging but are suitable for high-current switching applications.

For High-Frequency Applications: 30A02CH-TL-E (onsemi) offers 520 MHz transition frequency with 700 mA collector current and superior saturation characteristics (220 mV). This part requires 3-CPH package footprint and is suitable for RF and high-speed switching circuits.

For Extended Temperature Range: 2STR2230 (STMicroelectronics) maintains SOT-23-3 packaging with -65°C to 150°C operating range, matching the original part's temperature specification while providing 1.5 A collector current capacity.

Frequently Asked Questions (FAQ)

Q: Can BC858BLT1G directly replace BC858B-7-F without PCB modifications? A: Yes. BC858BLT1G maintains identical SOT-23-3 packaging and pin configuration. Electrical specifications are compatible: 100 mA collector current, 30 V breakdown voltage, and 300 mW power dissipation. Both parts are RoHS3 compliant.

Q: What is the difference between BC858B,215 and BC858BLT1G? A: BC858B,215 (Nexperia) uses TO-236AB packaging with 250 mW power rating and 100 MHz transition frequency. BC858BLT1G (onsemi) uses SOT-23-3 packaging with 300 mW power rating and 100 MHz transition frequency. Both maintain 100 mA collector current and 30 V breakdown voltage. Package footprints differ; verify PCB compatibility.

Q: Can I use 2SB1710TL as a drop-in replacement for BC858B-7-F? A: No. 2SB1710TL uses TSMT3 packaging (SC-96), which differs from the BC858B-7-F SOT-23-3 footprint. PCB layout modification is required. However, electrical specifications are compatible: 1 A collector current (exceeds 100 mA requirement), 30 V breakdown voltage, and superior 320 MHz transition frequency.

Q: What are the key electrical parameters that determine substitution compatibility? A: Substitution compatibility is determined by: (1) Transistor Type (PNP required), (2) Voltage - Collector Emitter Breakdown (30 V minimum), (3) Current - Collector (100 mA minimum), (4) DC Current Gain (220 minimum @ 2mA, 5V), (5) Vce Saturation (650 mV maximum @ 5mA, 100mA), and (6) Package/footprint compatibility.

Q: Is BC859B,215 suitable for automotive applications? A: Yes. BC859B,215 (NXP) is qualified to AEC-Q101 automotive standard and carries Automotive grade designation. It maintains 100 mA collector current, 30 V breakdown voltage, and 250 mW power dissipation. Verify specific automotive qualification requirements for your application.

Q: What is the advantage of 30A02CH-TL-E over BC858B-7-F? A: 30A02CH-TL-E provides 520 MHz transition frequency (versus 200 MHz), 700 mA collector current (versus 100 mA), and superior saturation voltage of 220 mV (versus 650 mV). These characteristics suit high-speed switching and RF applications. However, 3-CPH packaging requires PCB footprint modification.

Q: Can I use 2STR2230 as a direct replacement? A: 2STR2230 maintains SOT-23-3 packaging and -65°C to 150°C temperature range, matching the original part's footprint and thermal specifications. However, it provides 1.5 A collector current with 800 mV saturation voltage and 170 hFE minimum, which differs from the BC858B-7-F specifications. Verify circuit requirements before substitution.

Q: What packaging types are used in these substitute parts? A: Substitute parts use the following packages: SOT-23-3 (BC858BLT1G, NSVBC858BLT1G, 2STR2230), TO-236AB (BC858B,215, BC859B,215), SMT3 (2SB1695KT146), TSMT3 (2SB1695TL, 2SB1706TL, 2SB1710TL), and 3-CPH (30A02CH-TL-E). Verify PCB footprint compatibility before selection.

Q: Are all substitute parts RoHS3 compliant? A: Yes. All substitute parts listed are RoHS3 compliant, meeting modern environmental and regulatory requirements for electronic component manufacturing.

Request Quote (Ships tomorrow)