BC858AW-7-F Equivalent & Substitute Parts

Part Overview

The BC858AW-7-F is a PNP bipolar junction transistor manufactured by Diodes Incorporated, designed for general-purpose switching and amplification applications. This device operates at a maximum collector voltage of 30 V with a collector current rating of 100 mA and a transition frequency of 200 MHz. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives from active product lines. Substitute parts must maintain electrical compatibility across critical parameters including collector-emitter voltage rating, collector current capacity, saturation characteristics, and thermal operating range.

Substiute Parts

BC858AW-7-F
Diodes IncorporatedIn Stock: 53178BC858AW-7-F Datasheet
BC858AW-7-F
Current Part
BC857AW-7-F
Diodes IncorporatedIn Stock: 6173BC857AW-7-F Datasheet
BC857AW-7-F
MFR Recommended
BC858AWT1G
onsemiIn Stock: 10040BC858AWT1G Datasheet
BC858AWT1G
Direct
BC858W,115
Nexperia USA Inc.In Stock: 2498BC858W,115 Datasheet
BC858W,115
Direct
BC858W,135
NXP USA Inc.In Stock: 20436BC858W,135 Datasheet
BC858W,135
Direct
BC858BE6327HTSA1
Infineon TechnologiesIn Stock: 1115BC858BE6327HTSA1 Datasheet
BC858BE6327HTSA1
MFR Recommended
BC858BE6433HTMA1
Infineon TechnologiesIn Stock: 778BC858BE6433HTMA1 Datasheet
BC858BE6433HTMA1
MFR Recommended
BC858BWH6327XTSA1
Infineon TechnologiesIn Stock: 839BC858BWH6327XTSA1 Datasheet
BC858BWH6327XTSA1
MFR Recommended
BC858BWT1G
onsemiIn Stock: 39388BC858BWT1G Datasheet
BC858BWT1G
MFR Recommended
BC859BW,115
Nexperia USA Inc.In Stock: 693BC859BW,115 Datasheet
BC859BW,115
MFR Recommended
BC859BW,135
Nexperia USA Inc.In Stock: 1071BC859BW,135 Datasheet
BC859BW,135
MFR Recommended
BC859CW,115
Nexperia USA Inc.In Stock: 27114BC859CW,115 Datasheet
BC859CW,115
MFR Recommended
PMSS3906,115
NXP SemiconductorsIn Stock: 18176PMSS3906,115 Datasheet
PMSS3906,115
MFR Recommended

Key Parameters

Parameter BC858AW-7-F Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 30 V
Current - Collector (Ic) (Max) 100 mA
Vce Saturation (Max) @ Ib, Ic 650 mV @ 5 mA, 100 mA
Current - Collector Cutoff (Max) 15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2 mA, 5 V
Power - Max 200 mW
Frequency - Transition 200 MHz
Operating Temperature -65 to 150 °C
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the BC858AW-7-F is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor type must be PNP
  • Collector-emitter breakdown voltage must be greater than or equal to 30 V
  • Maximum collector current must be greater than or equal to 100 mA
  • Vce saturation characteristics must not exceed 650 mV @ 5 mA, 100 mA
  • DC current gain (hFE) minimum must be greater than or equal to 125 @ 2 mA, 5 V
  • Maximum power dissipation must be greater than or equal to 200 mW
  • Transition frequency must be greater than or equal to 200 MHz
  • Operating temperature range must encompass -65°C to 150°C
  • Mounting type must be surface mount
  • Package must be SC-70 or SOT-323 compatible

Secondary Compatibility Factors:

  • RoHS3 compliance required
  • MSL rating of 1 (Unlimited) preferred
  • Product status: Active parts are preferred over obsolete or Last Time Buy classifications

Substitute parts are grouped into two categories: direct electrical equivalents with identical or superior specifications, and functional alternatives that meet minimum performance thresholds while offering enhanced capabilities in specific parameters.

Parameter Comparison

Parameter BC858AW-7-F (Diodes) BC857AW-7-F (Diodes) BC858AWT1G (onsemi) BC858W,115 (Nexperia) BC858W,135 (NXP) BC858BWT1G (onsemi) BC859BW,115 (Nexperia) BC859BW,135 (Nexperia)
Transistor Type PNP PNP PNP PNP PNP PNP PNP PNP
Vce Breakdown (Max) [V] 30 45 30 30 30 30 30 30
Ic (Max) [mA] 100 100 100 100 100 100 100 100
Vce Saturation (Max) [mV] 650 650 650 600 600 650 650 650
ICBO (Max) [nA] 15 15 15 15 15 15 15 15
hFE (Min) @ 2mA, 5V 125 125 125 125 125 220 220 220
Power (Max) [mW] 200 200 150 200 200 150 200 200
Frequency - Transition [MHz] 200 200 100 100 100 100 100 100
Operating Temperature [°C] -65 to 150 -65 to 150 -55 to 150 to 150 to 150 -55 to 150 to 150 to 150
Package SOT-323 SOT-323 SC-70-3 SOT-323 SOT-323 SC-70-3 SOT-323 SOT-323
Product Status Obsolete Active Active Active Active Active Active Active
RoHS Status ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3

Engineering Selection Recommendations

Tier 1 - Direct Electrical Equivalents (Preferred):

BC858W,115 (Nexperia USA Inc.) and BC858W,135 (NXP USA Inc.) are direct substitutes for the BC858AW-7-F. Both parts maintain the 30 V collector-emitter breakdown voltage, 100 mA collector current, and 200 mW power rating. These parts are manufactured by Nexperia/NXP and carry active product status with AEC-Q101 automotive qualification. The Vce saturation is marginally improved at 600 mV compared to the original 650 mV specification. Both are ROHS3 compliant with MSL 1 rating.

BC858BWT1G (onsemi) is functionally equivalent with identical electrical specifications for voltage, current, and saturation characteristics. This part is active and ROHS3 compliant. The transition frequency is reduced to 100 MHz and maximum power is 150 mW, which remain within acceptable operating parameters for most applications designed for the BC858AW-7-F.

Tier 2 - Enhanced Performance Alternatives:

BC857AW-7-F (Diodes Incorporated) offers superior voltage rating at 45 V collector-emitter breakdown while maintaining all other critical parameters. This part is active and directly from the original manufacturer. The higher voltage rating provides additional design margin for applications with voltage transients.

BC859BW,115 and BC859BW,135 (Nexperia USA Inc.) are active alternatives with enhanced DC current gain (hFE minimum of 220 @ 2 mA, 5 V compared to 125). Both carry AEC-Q101 automotive qualification and active product status. These parts are suitable for applications requiring higher current amplification.

Tier 3 - Package Variant Consideration:

BC858AWT1G (onsemi) is supplied in SC-70-3 package variant, which is mechanically compatible with SOT-323 but may require PCB layout verification. This part is active with ROHS3 compliance.

Product Status Guidance:

All recommended substitutes carry active product status except BC858BE6327HTSA1 and BC858BE6433HTMA1 (Infineon), which are classified as Last Time Buy. These Infineon parts offer enhanced transition frequency (250 MHz) and power rating (330 mW) but should be selected only when specific performance requirements justify the limited availability status.

Frequently Asked Questions (FAQ)

Q: Can BC858AW-7-F be directly replaced with BC858W,115 or BC858W,135?

A: Yes. Both Nexperia parts maintain identical collector-emitter voltage (30 V), collector current (100 mA), and power dissipation (200 mW) specifications. The Vce saturation is improved at 600 mV. Both are active products with ROHS3 compliance and AEC-Q101 automotive qualification.

Q: What is the difference between BC858BWT1G and BC858AWT1G?

A: Both are onsemi products in SC-70-3 package with identical electrical specifications. BC858BWT1G has higher DC current gain (hFE minimum 220 vs. 125) and is available in significantly larger quantities (39,300 pcs vs. 9,933 pcs). Both are active products.

Q: Is BC857AW-7-F a suitable replacement?

A: BC857AW-7-F is a suitable upgrade substitute. It maintains all critical parameters of the BC858AW-7-F while providing a higher collector-emitter breakdown voltage rating of 45 V instead of 30 V. This offers additional design margin for voltage transients. The part is active and from the original manufacturer (Diodes Incorporated).

Q: Why do some substitutes have lower transition frequency (100 MHz vs. 200 MHz)?

A: The BC858AW-7-F specifies 200 MHz transition frequency. Substitutes with 100 MHz transition frequency (BC858AWT1G, BC858W,115, BC858W,135, BC858BWT1G, BC859BW,115, BC859BW,135) remain functionally equivalent for most general-purpose switching and amplification applications. Selection should be based on specific circuit bandwidth requirements.

Q: Are there package compatibility concerns?

A: The BC858AW-7-F is specified in SOT-323 package. Substitutes BC858AWT1G and BC858BWT1G use SC-70-3 package, which is mechanically compatible with SOT-323 but requires PCB layout verification for pin alignment and thermal characteristics. All other substitutes use SOT-323 directly.

Q: What is the significance of AEC-Q101 qualification on Nexperia parts?

A: AEC-Q101 qualification indicates the part meets automotive industry reliability standards. BC858W,115, BC858W,135, BC859BW,115, and BC859BW,135 carry this qualification, making them suitable for automotive applications requiring enhanced reliability documentation.

Q: Can BC859BW,115 or BC859BW,135 be used instead of BC858AW-7-F?

A: Yes. BC859 variants are functionally compatible with BC858 variants. The primary difference is enhanced DC current gain (hFE minimum 220 vs. 125). Both maintain 30 V collector-emitter voltage, 100 mA collector current, and 200 mW power rating. Selection depends on whether the higher current gain is beneficial or neutral for the application.

Q: What is the inventory status for active substitutes?

A: BC858W,135 has the highest inventory (20,400 pcs), followed by BC858BWT1G (39,300 pcs). BC857AW-7-F has 6,100 pcs available. All recommended Tier 1 and Tier 2 substitutes are in stock as new original parts.

Q: Are all substitutes ROHS3 compliant?

A: Yes. All recommended substitutes carry ROHS3 compliance status. All also maintain MSL 1 (Unlimited) moisture sensitivity level, matching the original BC858AW-7-F specification.

Request Quote (Ships tomorrow)