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BC857BV-7 Equivalent & Substitute Parts
Part Overview
The BC857BV-7 is a dual PNP bipolar junction transistor (BJT) manufactured by Diodes Incorporated in SOT-563 surface mount packaging. This component operates at 45V maximum collector-emitter breakdown voltage with 100mA maximum collector current and 150mW power dissipation. The device is classified as Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).
Equivalent and substitute parts are necessary when the primary part number becomes unavailable, when alternative packaging formats are required for manufacturing compatibility, or when enhanced electrical performance characteristics are needed for specific circuit applications while maintaining functional equivalence.
Substiute Parts
Key Parameters
| Parameter | BC857BV-7 Specification |
|---|---|
| Transistor Type | 2 PNP (Dual) |
| Maximum Collector Current (Ic) | 100mA |
| Maximum Collector-Emitter Breakdown Voltage (Vceo) | 45V |
| Vce Saturation (Max) | 400mV @ 5mA, 100mA |
| Maximum Collector Cutoff Current (Icbo) | 15nA |
| DC Current Gain (hFE Min) | 220 @ 2mA, 5V |
| Maximum Power Dissipation | 150mW |
| Transition Frequency (fT) | 100MHz |
| Operating Temperature Range | -55°C to 150°C |
| Package Type | SOT-563 |
| Mounting Type | Surface Mount |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitution of the BC857BV-7 is determined by the following critical electrical and mechanical parameters:
Primary Substitution Criteria:
- Transistor configuration: Dual PNP (2 PNP)
- Collector-emitter breakdown voltage: Minimum 45V
- Maximum collector current: Minimum 100mA
- Maximum power dissipation: Minimum 150mW
- Transition frequency: Minimum 100MHz
- Surface mount packaging: SOT-563 or SOT-666 compatible
- Operating temperature range: Minimum -55°C to 150°C
- RoHS3 compliance and MSL 1 rating
Substitution Logic: Parts are grouped into three categories based on their relationship to the BC857BV-7:
- Direct Equivalents – Identical electrical specifications and packaging format (SOT-563)
- Functional Equivalents – Meet or exceed all critical parameters but may use alternative packaging (SOT-666) or have enhanced performance characteristics
- Enhanced Performance Alternatives – Exceed base specifications in collector current, power dissipation, or transition frequency while maintaining backward compatibility
Parts that fall below the minimum specifications for any critical parameter are not suitable substitutes and are excluded from this reference.
Parameter Comparison
| Part Number | Manufacturer | Ic (Max) | Vceo (Max) | Power (Max) | fT (Min) | Package | Product Status | hFE (Min) |
|---|---|---|---|---|---|---|---|---|
| BC857BV-7 | Diodes Incorporated | 100mA | 45V | 150mW | 100MHz | SOT-563 | Active | 220 @ 2mA, 5V |
| BC857BV-TP | Micro Commercial Co | 100mA | 45V | 150mW | 100MHz | SOT-563 | Active | 200 @ 2mA, 5V |
| BC857BV,115 | Nexperia USA Inc. | 100mA | 45V | 200mW | 100MHz | SOT-666 | Not For New Designs | 200 @ 2mA, 5V |
| BCM857BV,115 | Nexperia USA Inc. | 100mA | 45V | 300mW | 175MHz | SOT-666 | Not For New Designs | 200 @ 2mA, 5V |
| BCM857BV,315 | Nexperia USA Inc. | 100mA | 45V | 300mW | 175MHz | SOT-666 | Not For New Designs | 200 @ 2mA, 5V |
| EMT1T2R | Rohm Semiconductor | 150mA | 50V | 150mW | 140MHz | EMT6 | Active | 120 @ 1mA, 6V |
| NST3906DXV6T1G | onsemi | 200mA | 40V | 500mW | 250MHz | SOT-563 | Active | 100 @ 10mA, 1V |
| PEMT1,115 | Nexperia USA Inc. | 100mA | 40V | 300mW | 100MHz | SOT-666 | Not For New Designs | 120 @ 1mA, 6V |
| PEMT1,315 | Nexperia USA Inc. | 100mA | 40V | 300mW | 100MHz | SOT-666 | Not For New Designs | 120 @ 1mA, 6V |
| PMBT3906VS,115 | NXP USA Inc. | 200mA | 40V | Not Specified | Not Specified | SOT-666 | Active | Not Specified |
Engineering Selection Recommendations
For Direct Replacement (Active Product Status):
BC857BV-TP (Micro Commercial Co) is the primary direct substitute for BC857BV-7. Both components share identical electrical specifications (100mA, 45V, 150mW, 100MHz) and SOT-563 packaging. BC857BV-TP maintains Active product status and is suitable for new designs. The DC current gain specification differs slightly (200 vs. 220 minimum), which remains within acceptable tolerance for most applications requiring dual PNP transistor arrays.
For Enhanced Performance (Active Product Status):
NST3906DXV6T1G (onsemi) provides enhanced electrical performance with 200mA collector current, 250MHz transition frequency, and 500mW power dissipation while maintaining SOT-563 packaging and Active product status. This part is suitable when higher current capacity or faster switching performance is required. Note that the collector-emitter breakdown voltage is 40V, which is below the BC857BV-7 specification of 45V.
EMT1T2R (Rohm Semiconductor) offers 150mA collector current and 50V breakdown voltage in Active product status. The EMT6 package differs from SOT-563, requiring PCB layout modification. This part is suitable for applications requiring higher voltage rating or current capacity.
For Legacy System Support (Not For New Designs):
BC857BV,115, BCM857BV,115, BCM857BV,315, PEMT1,115, and PEMT1,315 are classified as Not For New Designs. These parts are available for sustaining production of existing products but should not be selected for new circuit designs. All are manufactured by Nexperia USA Inc. and use SOT-666 packaging.
Compliance Considerations:
All listed substitute parts maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, consistent with BC857BV-7 specifications. PMBT3906VS,115 is the only part with incomplete technical documentation in the provided data set and should be cross-referenced with manufacturer datasheets before selection.
Frequently Asked Questions (FAQ)
Q: Can BC857BV-TP be used as a direct replacement for BC857BV-7 in production?
A: Yes. BC857BV-TP meets all critical electrical parameters (100mA, 45V, 150mW, 100MHz) and uses identical SOT-563 packaging. Both components are Active product status. The DC current gain minimum of 200 versus 220 is within acceptable tolerance for dual PNP transistor array applications.
Q: What is the difference between BC857BV,115 and BCM857BV,115?
A: BC857BV,115 is a standard dual PNP transistor array with 100MHz transition frequency and 200mW power dissipation. BCM857BV,115 is a matched pair variant with enhanced specifications: 175MHz transition frequency and 300mW power dissipation. Both use SOT-666 packaging and are classified as Not For New Designs.
Q: Why does NST3906DXV6T1G have a lower breakdown voltage (40V) than BC857BV-7 (45V)?
A: NST3906DXV6T1G is designed for applications where 40V breakdown voltage is sufficient. The lower voltage rating is offset by enhanced performance in collector current (200mA vs. 100mA), power dissipation (500mW vs. 150mW), and transition frequency (250MHz vs. 100MHz). Selection depends on circuit voltage requirements.
Q: Can parts marked "Not For New Designs" be used in new product development?
A: Parts with "Not For New Designs" status should not be selected for new circuit designs. These parts are available only for sustaining production of existing products. For new designs, select from parts with Active product status: BC857BV-7, BC857BV-TP, EMT1T2R, NST3906DXV6T1G, or PMBT3906VS,115.
Q: What is the significance of the SOT-666 package versus SOT-563?
A: SOT-666 and SOT-563 are both surface mount packages for dual transistor arrays but have different physical dimensions and pin configurations. SOT-563 is more compact. Parts using SOT-666 packaging require different PCB footprints and cannot be directly substituted without layout modification.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All listed substitute parts maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, consistent with BC857BV-7 specifications.
Q: Which substitute part offers the best performance upgrade?
A: NST3906DXV6T1G provides the most significant performance enhancement with 250MHz transition frequency (2.5× higher than BC857BV-7), 200mA collector current (2× higher), and 500mW power dissipation (3.3× higher). This part is suitable for high-speed switching applications requiring enhanced current handling capacity.
Q: Can PEMT1,115 and PEMT1,315 be used interchangeably?
A: Yes. PEMT1,115 and PEMT1,315 share identical electrical specifications (100mA, 40V, 300mW, 100MHz) and SOT-666 packaging. Both are classified as Not For New Designs. The part number suffix indicates different manufacturing date codes or supplier designations but does not affect electrical performance.
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