BC857B-HF Equivalent & Substitute Parts Reference

Part Overview

The BC857B-HF is a PNP bipolar junction transistor manufactured by Comchip Technology, designed for general-purpose switching and amplification applications. This surface mount device operates at 45 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and 250 mW power dissipation. The part is currently in active production status with 839 pieces in stock.

Substitute parts are necessary when the primary part becomes unavailable, when alternative manufacturers offer improved specifications, or when design requirements demand enhanced performance characteristics such as higher frequency response, improved saturation characteristics, or automotive-grade qualification.

Substiute Parts

BC857B-HF
Comchip TechnologyIn Stock: 943BC857B-HF Datasheet
BC857B-HF
Current Part
2PB709ART,215
NXP USA Inc.In Stock: 353422PB709ART,215 Datasheet
2PB709ART,215
Upgrade
BCW70,215
Nexperia USA Inc.In Stock: 4700BCW70,215 Datasheet
BCW70,215
Upgrade
BC857A RFG
Taiwan Semiconductor CorporationIn Stock: 10037BC857A RFG Datasheet
BC857A RFG
MFR Recommended
BC857ALT1G
onsemiIn Stock: 747791BC857ALT1G Datasheet
BC857ALT1G
MFR Recommended
BC857B RFG
Taiwan Semiconductor CorporationIn Stock: 10037BC857B RFG Datasheet
BC857B RFG
MFR Recommended
BC857B-7-F
Diodes IncorporatedIn Stock: 80349BC857B-7-F Datasheet
BC857B-7-F
MFR Recommended
BC857BE6433HTMA1
Infineon TechnologiesIn Stock: 863BC857BE6433HTMA1 Datasheet
BC857BE6433HTMA1
MFR Recommended
BC857C RFG
Taiwan Semiconductor CorporationIn Stock: 9958BC857C RFG Datasheet
BC857C RFG
MFR Recommended
BC857CLT3G
onsemiIn Stock: 15774BC857CLT3G Datasheet
BC857CLT3G
MFR Recommended
BC860BE6327HTSA1
Infineon TechnologiesIn Stock: 899BC860BE6327HTSA1 Datasheet
BC860BE6327HTSA1
MFR Recommended
BCX71GE6327HTSA1
Infineon TechnologiesIn Stock: 1006BCX71GE6327HTSA1 Datasheet
BCX71GE6327HTSA1
MFR Recommended
BCX71JE6433HTMA1
Infineon TechnologiesIn Stock: 852BCX71JE6433HTMA1 Datasheet
BCX71JE6433HTMA1
MFR Recommended
NSVBC857BLT3G
onsemiIn Stock: 1420NSVBC857BLT3G Datasheet
NSVBC857BLT3G
MFR Recommended
SBC857CLT1G
onsemiIn Stock: 1253SBC857CLT1G Datasheet
SBC857CLT1G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type PNP
Collector Current (Max) 100 mA
Collector-Emitter Breakdown Voltage (Max) 45 V
Power Dissipation (Max) 250 mW
Transition Frequency 100 MHz
Operating Temperature Range -65 to 150 °C
Package Type SOT-23-3 (TO-236-3)
Mounting Type Surface Mount
RoHS Compliance ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the BC857B-HF is determined by the following mandatory parameters:

Critical Parameters (Must Match):

  • Transistor Type: PNP
  • Collector Current (Max): 100 mA
  • Collector-Emitter Breakdown Voltage (Max): 45 V
  • Package/Case: TO-236-3, SC-59, SOT-23-3
  • Mounting Type: Surface Mount

Allowable Variation Parameters:

  • Power Dissipation: 250 mW or greater
  • Transition Frequency: 100 MHz or greater
  • DC Current Gain (hFE): 125 or greater at specified conditions
  • Vce Saturation: 650 mV or lower at rated conditions
  • Operating Temperature: -65°C to 150°C or subset thereof
  • Collector Cutoff Current (ICBO): 10 nA to 100 nA

All substitute parts listed maintain identical critical parameters while offering equal or superior performance in allowable variation parameters. Substitutes are grouped by manufacturer and product status to facilitate procurement decisions.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(br) V Power mW fT MHz hFE @ Ic, Vce Vce Sat mV Status
BC857B-HF Comchip Technology 100 45 250 100 125 @ 2.2mA, 5V 650 @ 5mA, 100mA Active
2PB709ART,215 NXP USA Inc. 100 45 250 70 210 @ 2mA, 10V 500 @ 10mA, 100mA Active
BCW70,215 Nexperia USA Inc. 100 45 250 100 215 @ 2mA, 5V 150 @ 2.5mA, 50mA Active
BC857A RFG Taiwan Semiconductor Corporation 100 45 200 100 125 @ 2mA, 5V 650 @ 5mA, 100mA Active
BC857ALT1G onsemi 100 45 300 100 125 @ 2mA, 5V 650 @ 5mA, 100mA Active
BC857B RFG Taiwan Semiconductor Corporation 100 45 200 100 220 @ 2mA, 5V 650 @ 5mA, 100mA Active
BC857B-7-F Diodes Incorporated 100 45 300 200 220 @ 2mA, 5V 650 @ 5mA, 100mA Active
BC857BE6433HTMA1 Infineon Technologies 100 45 330 250 220 @ 2mA, 5V 650 @ 5mA, 100mA Last Time Buy
BC857C RFG Taiwan Semiconductor Corporation 100 45 200 100 420 @ 2mA, 5V 650 @ 5mA, 100mA Active
BC857CLT3G onsemi 100 45 300 100 420 @ 2mA, 5V 650 @ 5mA, 100mA Active
BC860BE6327HTSA1 Infineon Technologies 100 45 330 250 220 @ 2mA, 5V 650 @ 5mA, 100mA Last Time Buy

Engineering Selection Recommendations

Primary Substitutes (Active Status, Highest Compatibility):

BC857ALT1G (onsemi) and BC857CLT3G (onsemi) are recommended as primary substitutes. Both parts maintain identical electrical specifications to the BC857B-HF while offering 300 mW power dissipation (20% margin above the 250 mW requirement). onsemi maintains extensive inventory (747,693 and 15,691 pieces respectively), ensuring supply continuity. Both parts are RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

BC857B-7-F (Diodes Incorporated) provides enhanced performance with 200 MHz transition frequency (double the BC857B-HF specification) and 300 mW power dissipation. This part is suitable for applications requiring higher frequency response. Inventory availability is substantial at 80,300 pieces.

Secondary Substitutes (Active Status, Specific Applications):

BCW70,215 (Nexperia USA Inc.) offers superior saturation characteristics with 150 mV Vce(sat) at 2.5 mA/50 mA, compared to 650 mV for the BC857B-HF. This part is automotive-grade (AEC-Q101 qualified) and suitable for switching applications requiring minimal saturation voltage. Inventory: 4,671 pieces.

2PB709ART,215 (NXP USA Inc.) is automotive-grade (AEC-Q101 qualified) with improved saturation performance (500 mV at 10 mA/100 mA). This part is suitable for automotive and industrial applications. Inventory: 35,300 pieces.

Transitional Substitutes (Last Time Buy Status):

BC857BE6433HTMA1 and BC860BE6327HTSA1 (both Infineon Technologies) offer the highest performance specifications with 250 MHz transition frequency and 330 mW power dissipation. However, both parts carry Last Time Buy status, indicating discontinued production. These parts are suitable only for applications where existing inventory can support long-term requirements or where design migration is planned.

Not Recommended for Direct Substitution:

BC857A RFG and BC857B RFG (Taiwan Semiconductor Corporation) offer only 200 mW power dissipation, which is below the 250 mW specification of the BC857B-HF. These parts are suitable only for applications with reduced thermal requirements.

Frequently Asked Questions (FAQ)

Q: Can BC857ALT1G directly replace BC857B-HF without circuit modification?

A: Yes. BC857ALT1G maintains all critical electrical parameters (100 mA Ic, 45 V Vce(br), PNP type, SOT-23-3 package) and offers superior power dissipation (300 mW vs. 250 mW). No circuit modification is required.

Q: What is the difference between BC857B-7-F and BC857B-HF?

A: BC857B-7-F offers doubled transition frequency (200 MHz vs. 100 MHz) and increased power dissipation (300 mW vs. 250 mW). All other critical parameters are identical. BC857B-7-F is suitable for higher-frequency applications.

Q: Are automotive-grade substitutes (BCW70,215, 2PB709ART,215) compatible with non-automotive applications?

A: Yes. Automotive-grade parts (AEC-Q101 qualified) meet or exceed commercial-grade specifications and are fully compatible with non-automotive applications. The automotive qualification indicates enhanced reliability and stricter manufacturing controls.

Q: Why do some substitutes show different Vce saturation values?

A: Vce saturation varies based on measurement conditions (base current and collector current). BCW70,215 shows 150 mV at 2.5 mA/50 mA, while BC857B-HF shows 650 mV at 5 mA/100 mA. Lower saturation voltage indicates superior switching performance in high-current applications.

Q: Can I use BC857BE6433HTMA1 or BC860BE6327HTSA1 for new designs?

A: Both parts carry Last Time Buy status, indicating discontinued production. These parts are not recommended for new designs. Use BC857ALT1G, BC857CLT3G, or BC857B-7-F instead.

Q: What is the significance of DC Current Gain (hFE) differences among substitutes?

A: hFE determines the base current required to achieve a specified collector current. Higher hFE (e.g., 420 in BC857C RFG) requires less base drive current than lower hFE (e.g., 125 in BC857B-HF). Both are functionally equivalent; hFE differences affect circuit biasing but not substitutability.

Q: Are all listed substitutes RoHS3 compliant?

A: Yes. All active-status substitute parts listed are RoHS3 compliant. Last Time Buy parts (BC857BE6433HTMA1, BC860BE6327HTSA1) are also RoHS3 compliant.

Q: What packaging options are available for BC857B-HF substitutes?

A: All substitutes use identical packaging: TO-236-3, SC-59, or SOT-23-3 (equivalent designations). All are surface mount devices suitable for automated assembly. Tape & Reel (TR) and Bulk packaging options are available depending on the specific substitute part number.

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