BC857B Equivalent & Substitute Parts

Part Overview

The BC857B is a PNP bipolar junction transistor manufactured by STMicroelectronics in SOT-23-3 surface mount packaging. This device is rated for 45 V collector-emitter breakdown voltage, 100 mA maximum collector current, and 250 mW power dissipation. The BC857B operates at frequencies up to 100 MHz with a maximum junction temperature of 150°C.

The BC857B is classified as an obsolete product. Equivalent and substitute parts are necessary to maintain design continuity, ensure component availability, and support ongoing production requirements. Substitute devices must maintain electrical compatibility within the specified parameter ranges while meeting current manufacturing and compliance standards.

Substiute Parts

BC857B
STMicroelectronicsIn Stock: 905204BC857B Datasheet
BC857B
Current Part
BCW70LT1G
onsemiIn Stock: 4037BCW70LT1G Datasheet
BCW70LT1G
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BC807-16-7-F
Diodes IncorporatedIn Stock: 15720BC807-16-7-F Datasheet
BC807-16-7-F
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BC807-40-7-F
Diodes IncorporatedIn Stock: 17132BC807-40-7-F Datasheet
BC807-40-7-F
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BC857,215
Nexperia USA Inc.In Stock: 101335BC857,215 Datasheet
BC857,215
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BC857,235
NXP USA Inc.In Stock: 191018BC857,235 Datasheet
BC857,235
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BC857A RFG
Taiwan Semiconductor CorporationIn Stock: 10037BC857A RFG Datasheet
BC857A RFG
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BC857A,215
Nexperia USA Inc.In Stock: 35667BC857A,215 Datasheet
BC857A,215
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BC857A-7-F
Diodes IncorporatedIn Stock: 15152BC857A-7-F Datasheet
BC857A-7-F
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BC857ALT1G
onsemiIn Stock: 747791BC857ALT1G Datasheet
BC857ALT1G
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BC857B-7-F
Diodes IncorporatedIn Stock: 80349BC857B-7-F Datasheet
BC857B-7-F
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BC857B-TP
Micro Commercial CoIn Stock: 12996BC857B-TP Datasheet
BC857B-TP
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BC857BE6327HTSA1
Infineon TechnologiesIn Stock: 3446BC857BE6327HTSA1 Datasheet
BC857BE6327HTSA1
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BC857BLT3G
onsemiIn Stock: 41733BC857BLT3G Datasheet
BC857BLT3G
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BC857BTT1G
onsemiIn Stock: 118242BC857BTT1G Datasheet
BC857BTT1G
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BC857B_R1_00001
Panjit International Inc.In Stock: 5415BC857B_R1_00001 Datasheet
BC857B_R1_00001
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BC857C TR PBFREE
Central Semiconductor CorpIn Stock: 1167BC857C TR PBFREE Datasheet
BC857C TR PBFREE
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BC857C,215
Nexperia USA Inc.In Stock: 63263BC857C,215 Datasheet
BC857C,215
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BC857C,235
Nexperia USA Inc.In Stock: 36622BC857C,235 Datasheet
BC857C,235
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BC857C-7-F
Diodes IncorporatedIn Stock: 155250BC857C-7-F Datasheet
BC857C-7-F
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BC857CE6327HTSA1
Infineon TechnologiesIn Stock: 6459BC857CE6327HTSA1 Datasheet
BC857CE6327HTSA1
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BC857CLT3G
onsemiIn Stock: 15774BC857CLT3G Datasheet
BC857CLT3G
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BC858B,215
Nexperia USA Inc.In Stock: 9197BC858B,215 Datasheet
BC858B,215
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BC858B,235
Nexperia USA Inc.In Stock: 5797BC858B,235 Datasheet
BC858B,235
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BC859B,215
NXP SemiconductorsIn Stock: 9498754BC859B,215 Datasheet
BC859B,215
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BC859C,215
Nexperia USA Inc.In Stock: 16490BC859C,215 Datasheet
BC859C,215
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BC859C,235
Nexperia USA Inc.In Stock: 11014BC859C,235 Datasheet
BC859C,235
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BC860BW,115
NXP USA Inc.In Stock: 4394BC860BW,115 Datasheet
BC860BW,115
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BC860BW,135
Nexperia USA Inc.In Stock: 10689BC860BW,135 Datasheet
BC860BW,135
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BC860C,215
Nexperia USA Inc.In Stock: 54579BC860C,215 Datasheet
BC860C,215
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BC860C,235
Nexperia USA Inc.In Stock: 5709BC860C,235 Datasheet
BC860C,235
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BCW29,215
Nexperia USA Inc.In Stock: 4146BCW29,215 Datasheet
BCW29,215
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BCW29,235
Nexperia USA Inc.In Stock: 717BCW29,235 Datasheet
BCW29,235
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BCW30,215
Nexperia USA Inc.In Stock: 12330BCW30,215 Datasheet
BCW30,215
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BCW30,235
Nexperia USA Inc.In Stock: 11012BCW30,235 Datasheet
BCW30,235
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BCW61B,215
Nexperia USA Inc.In Stock: 1297BCW61B,215 Datasheet
BCW61B,215
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BCW61C,215
Nexperia USA Inc.In Stock: 15224BCW61C,215 Datasheet
BCW61C,215
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BCW61C,235
Nexperia USA Inc.In Stock: 10895BCW61C,235 Datasheet
BCW61C,235
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BCW61D,215
Nexperia USA Inc.In Stock: 7261BCW61D,215 Datasheet
BCW61D,215
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BCW68HTA
Diodes IncorporatedIn Stock: 2029BCW68HTA Datasheet
BCW68HTA
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BCW69,215
Nexperia USA Inc.In Stock: 42463BCW69,215 Datasheet
BCW69,215
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BCW70,215
Nexperia USA Inc.In Stock: 4700BCW70,215 Datasheet
BCW70,215
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BCW70,235
Nexperia USA Inc.In Stock: 754BCW70,235 Datasheet
BCW70,235
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BCW89,215
Nexperia USA Inc.In Stock: 24265BCW89,215 Datasheet
BCW89,215
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FMMT720TA
Diodes IncorporatedIn Stock: 105314FMMT720TA Datasheet
FMMT720TA
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MMBT3906LT1G
onsemiIn Stock: 608945MMBT3906LT1G Datasheet
MMBT3906LT1G
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MMBT3906LT3G
onsemiIn Stock: 1194MMBT3906LT3G Datasheet
MMBT3906LT3G
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MMBT4403-7-F
Diodes IncorporatedIn Stock: 17425MMBT4403-7-F Datasheet
MMBT4403-7-F
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MMBTA92LT1G
onsemiIn Stock: 155377MMBTA92LT1G Datasheet
MMBTA92LT1G
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MMBTA92LT3G
onsemiIn Stock: 10492MMBTA92LT3G Datasheet
MMBTA92LT3G
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NSVBC857BLT3G
onsemiIn Stock: 1420NSVBC857BLT3G Datasheet
NSVBC857BLT3G
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SBC857ALT1G
onsemiIn Stock: 35352SBC857ALT1G Datasheet
SBC857ALT1G
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SMBT3906E6327HTSA1
Infineon TechnologiesIn Stock: 35044SMBT3906E6327HTSA1 Datasheet
SMBT3906E6327HTSA1
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SMMBT3906LT1G
onsemiIn Stock: 95327SMMBT3906LT1G Datasheet
SMMBT3906LT1G
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SMMBT3906LT3G
onsemiIn Stock: 8482SMMBT3906LT3G Datasheet
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BC857B
Good-Ark SemiconductorIn Stock: 905201BC857B Datasheet
BC857B
Parametric Equivalent
BC857B,215
Nexperia USA Inc.In Stock: 31054BC857B,215 Datasheet
BC857B,215
Parametric Equivalent
BC857B,235
Nexperia USA Inc.In Stock: 11210BC857B,235 Datasheet
BC857B,235
Parametric Equivalent
BC857B-QR
Nexperia USA Inc.In Stock: 43144BC857B-QR Datasheet
BC857B-QR
Parametric Equivalent
BC857B-QVL
Nexperia USA Inc.In Stock: 994BC857B-QVL Datasheet
BC857B-QVL
Parametric Equivalent
BC860B
Diotec SemiconductorIn Stock: 17376BC860B Datasheet
BC860B
Parametric Equivalent
BC860B,215
Nexperia USA Inc.In Stock: 24450BC860B,215 Datasheet
BC860B,215
Parametric Equivalent
BC860B,235
Nexperia USA Inc.In Stock: 1131BC860B,235 Datasheet
BC860B,235
Parametric Equivalent

Key Parameters

Parameter Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 45 V
Current - Collector (Ic) (Max) 100 mA
Power - Max 250 mW
Frequency - Transition 100 MHz
Operating Temperature (Max) 150 °C
Package / Case SOT-23-3
Mounting Type Surface Mount
Vce Saturation (Max) @ Ib, Ic 650 mV @ 5 mA, 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2 mA, 5 V

Substitute Part Grouping Explanation

Substitute parts for the BC857B are classified into two categories based on electrical parameter compatibility:

Direct Electrical Equivalents maintain all critical electrical parameters within the BC857B specification envelope. These parts are suitable for direct replacement without circuit modification:

  • Maximum collector current: 100 mA
  • Collector-emitter breakdown voltage: 45 V
  • Power dissipation: 250 mW or greater
  • Transition frequency: 100 MHz or greater
  • Operating temperature range: minimum 150°C maximum junction temperature
  • Package: SOT-23-3 surface mount

Higher-Performance Alternatives exceed one or more electrical parameters while maintaining backward compatibility. These parts operate within the BC857B electrical envelope and are suitable for applications where enhanced performance is acceptable:

  • Maximum collector current: 500 mA (exceeds 100 mA requirement)
  • Power dissipation: 310 mW (exceeds 250 mW requirement)
  • Transition frequency: 200 MHz (exceeds 100 MHz requirement)

All substitute parts maintain PNP transistor type, SOT-23-3 package compatibility, and surface mount mounting configuration.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(br) V Power mW fT MHz hFE @ 2mA, 5V Vce Sat mV Product Status RoHS
BC857B STMicroelectronics 100 45 250 100 220 650 Obsolete Non-compliant
BCW70LT1G onsemi 100 45 225 215 300 Active ROHS3 Compliant
BC807-16-7-F Diodes Incorporated 500 45 310 100 100 700 Active ROHS3 Compliant
BC807-40-7-F Diodes Incorporated 500 45 310 100 250 700 Active ROHS3 Compliant
BC857,215 Nexperia USA Inc. 100 45 250 100 125 650 Active ROHS3 Compliant
BC857,235 NXP USA Inc. 100 45 250 100 125 650 Active Active
BC857A RFG Taiwan Semiconductor Corporation 100 45 200 100 125 650 Active ROHS3 Compliant
BC857A,215 Nexperia USA Inc. 100 45 250 100 125 650 Active ROHS3 Compliant
BC857A-7-F Diodes Incorporated 100 45 300 200 125 650 Active ROHS3 Compliant
BC857ALT1G onsemi 100 45 300 100 125 650 Active ROHS3 Compliant
BC857B-7-F Diodes Incorporated 100 45 300 200 220 650 Active ROHS3 Compliant

Engineering Selection Recommendations

Direct Replacement Priority

BC857B-7-F (Diodes Incorporated) provides the closest electrical match to the BC857B. This part maintains identical collector current (100 mA), collector-emitter breakdown voltage (45 V), saturation voltage (650 mV), and DC current gain (220 @ 2 mA, 5 V). The device offers enhanced power dissipation (300 mW versus 250 mW) and transition frequency (200 MHz versus 100 MHz), providing design margin without requiring circuit modification. Product status is active with ROHS3 compliance.

Equivalent Electrical Performance

BC857ALT1G (onsemi) and BC857A-7-F (Diodes Incorporated) deliver equivalent electrical performance within the BC857B specification envelope. Both maintain 100 mA collector current, 45 V breakdown voltage, and 650 mV saturation voltage. These parts feature active product status and ROHS3 compliance. BC857ALT1G provides 300 mW power dissipation at 100 MHz transition frequency. BC857A-7-F offers 300 mW power dissipation at 200 MHz transition frequency with extended operating temperature range (-65°C to 150°C).

Nexperia Alternatives

BC857,215 and BC857A,215 (Nexperia USA Inc.) maintain electrical compatibility with identical voltage and current ratings. Both parts feature automotive-grade qualification (AEC-Q101) and ROHS3 compliance. DC current gain is specified at 125 @ 2 mA, 5 V, which is lower than the BC857B specification (220 @ 2 mA, 5 V) but remains within acceptable design margins for most applications.

Higher-Current Applications

BC807-40-7-F (Diodes Incorporated) supports applications requiring higher collector current (500 mA maximum). This part maintains 45 V breakdown voltage and 100 MHz transition frequency. DC current gain is specified at 250 @ 100 mA, 1 V. Saturation voltage increases to 700 mV at higher current levels. This device is suitable only for circuits designed to accommodate increased current capability.

Compliance Considerations

All recommended substitute parts maintain ROHS3 compliance status, addressing regulatory requirements for new designs. The BC857B is classified as RoHS non-compliant, making substitution necessary for applications subject to RoHS directives. All substitute parts maintain REACH unaffected status and EAR99 export classification consistent with the original device.

Frequently Asked Questions (FAQ)

Q: Can BC857B-7-F directly replace BC857B in existing designs?

A: Yes. BC857B-7-F maintains identical electrical parameters for collector current (100 mA), collector-emitter breakdown voltage (45 V), saturation voltage (650 mV), and DC current gain (220 @ 2 mA, 5 V). Enhanced power dissipation (300 mW) and transition frequency (200 MHz) provide additional design margin. SOT-23-3 package compatibility ensures mechanical interchangeability.

Q: What is the difference between BC857A and BC857B variants?

A: The primary difference is DC current gain specification. BC857B specifies minimum hFE of 220 @ 2 mA, 5 V. BC857A variants specify minimum hFE of 125 @ 2 mA, 5 V. Both maintain identical voltage (45 V), current (100 mA), and power (250 mW) ratings. BC857A devices are suitable for applications with less stringent gain requirements.

Q: Are BC807 series parts suitable replacements for BC857B?

A: BC807-16-7-F and BC807-40-7-F are higher-performance alternatives, not direct replacements. These parts support 500 mA collector current versus 100 mA for BC857B. Saturation voltage increases to 700 mV at rated current. Use BC807 series only in circuits designed to accommodate higher current capability and saturation voltage characteristics.

Q: What is the significance of the packaging designation differences (SOT-23-3 versus TO-236-3)?

A: SOT-23-3 and TO-236-3 refer to the same physical package. Both designations describe a three-terminal surface mount package with identical pin configuration and footprint. Parts specified with either designation are mechanically interchangeable on standard PCB layouts.

Q: Does BCW70LT1G provide equivalent performance to BC857B?

A: BCW70LT1G maintains electrical compatibility for voltage (45 V) and current (100 mA) ratings. Saturation voltage is significantly lower (300 mV @ 500 µA, 10 mA versus 650 mV @ 5 mA, 100 mA for BC857B). DC current gain is specified at 215 @ 2 mA, 5 V, closely matching BC857B. Power dissipation is 225 mW, slightly below BC857B specification. This part is suitable for applications where lower saturation voltage is beneficial.

Q: Why do some substitute parts specify transition frequency as "—" (not provided)?

A: BCW70LT1G does not provide transition frequency specification in available documentation. This parameter is not required for all applications. For designs requiring specific frequency response, select parts with documented transition frequency specifications (100 MHz or greater).

Q: Are automotive-qualified variants (BC857,215 and BC857A,215) necessary for non-automotive applications?

A: Automotive qualification (AEC-Q101) is not required for non-automotive applications. These parts are suitable for general-purpose use. Automotive-qualified variants provide additional process control and reliability documentation beneficial for safety-critical applications. Selection should be based on application requirements rather than qualification status alone.

Q: What is the impact of RoHS compliance on part selection?

A: All active substitute parts maintain ROHS3 compliance. The original BC857B is RoHS non-compliant. For new designs or applications subject to RoHS directives, select ROHS3-compliant alternatives. Existing designs using BC857B may continue operation, but new production should transition to compliant substitutes.

Q: Can parts with different DC current gain specifications be used interchangeably?

A: DC current gain variation affects circuit biasing and amplification characteristics. Parts with hFE of 220 (BC857B, BC857B-7-F, BC807-40-7-F) are directly interchangeable. Parts with hFE of 125 (BC857A variants) require circuit verification to ensure adequate biasing and gain margins. Parts with hFE of 215 (BCW70LT1G) are suitable for most applications with minor gain variation tolerance.

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