BC856T,115 Equivalent & Substitute Parts Reference

Part Overview

The BC856T,115 is a PNP bipolar junction transistor manufactured by NXP USA Inc., designed for general-purpose switching and amplification applications. This device features a 65 V collector-emitter breakdown voltage, 100 mA maximum collector current, and 100 MHz transition frequency in an SC-75 surface mount package. The part is classified as obsolete, necessitating identification of active equivalent alternatives that maintain electrical and mechanical compatibility for ongoing production and repair applications.

Substiute Parts

BC856T,115
NXP USA Inc.In Stock: 1171BC856T,115 Datasheet
BC856T,115
Current Part
BC856,215
Nexperia USA Inc.In Stock: 94258BC856,215 Datasheet
BC856,215
MFR Recommended
BC856A-7-F
Diodes IncorporatedIn Stock: 18357BC856A-7-F Datasheet
BC856A-7-F
MFR Recommended
BC856A-TP
Micro Commercial CoIn Stock: 4069BC856A-TP Datasheet
BC856A-TP
MFR Recommended
BC856ALT1G
onsemiIn Stock: 68447BC856ALT1G Datasheet
BC856ALT1G
MFR Recommended
BC856B-13-F
Diodes IncorporatedIn Stock: 90440BC856B-13-F Datasheet
BC856B-13-F
MFR Recommended
BC856B-7-F
Diodes IncorporatedIn Stock: 126389BC856B-7-F Datasheet
BC856B-7-F
MFR Recommended
BC856B-TP
Micro Commercial CoIn Stock: 5346BC856B-TP Datasheet
BC856B-TP
MFR Recommended
BC856BLT1G
onsemiIn Stock: 1495322BC856BLT1G Datasheet
BC856BLT1G
MFR Recommended
BC856BLT3G
onsemiIn Stock: 130977BC856BLT3G Datasheet
BC856BLT3G
MFR Recommended
BC856BQ-7-F
Diodes IncorporatedIn Stock: 3431BC856BQ-7-F Datasheet
BC856BQ-7-F
MFR Recommended
BC856W,115
Nexperia USA Inc.In Stock: 20471BC856W,115 Datasheet
BC856W,115
MFR Recommended
BSR16
Fairchild SemiconductorIn Stock: 42094BSR16 Datasheet
BSR16
MFR Recommended
DPBT8105-7
Diodes IncorporatedIn Stock: 101110DPBT8105-7 Datasheet
DPBT8105-7
MFR Recommended
DPLS160-7
Diodes IncorporatedIn Stock: 26266DPLS160-7 Datasheet
DPLS160-7
MFR Recommended
DSS5160T-7
Diodes IncorporatedIn Stock: 33353DSS5160T-7 Datasheet
DSS5160T-7
MFR Recommended
FMMT591-TP
Micro Commercial CoIn Stock: 9232FMMT591-TP Datasheet
FMMT591-TP
MFR Recommended
FMMT722TA
Diodes IncorporatedIn Stock: 100273FMMT722TA Datasheet
FMMT722TA
MFR Recommended
FSB660A
onsemiIn Stock: 20500FSB660A Datasheet
FSB660A
MFR Recommended
MMBT2907A-7-F
Diodes IncorporatedIn Stock: 125351MMBT2907A-7-F Datasheet
MMBT2907A-7-F
MFR Recommended
MMBT2907A-TP
Micro Commercial CoIn Stock: 2269MMBT2907A-TP Datasheet
MMBT2907A-TP
MFR Recommended
MMBT2907A-TP-HF
Micro Commercial CoIn Stock: 1162MMBT2907A-TP-HF Datasheet
MMBT2907A-TP-HF
MFR Recommended
MMBT2907ALT1G
onsemiIn Stock: 1598431MMBT2907ALT1G Datasheet
MMBT2907ALT1G
MFR Recommended
MMBT2907ALT1HTSA1
Infineon TechnologiesIn Stock: 19943MMBT2907ALT1HTSA1 Datasheet
MMBT2907ALT1HTSA1
MFR Recommended
MMBT2907ALT3G
onsemiIn Stock: 889099MMBT2907ALT3G Datasheet
MMBT2907ALT3G
MFR Recommended
MMBT2907AQ-7-F
Diodes IncorporatedIn Stock: 20482MMBT2907AQ-7-F Datasheet
MMBT2907AQ-7-F
MFR Recommended
SBC856ALT1G
onsemiIn Stock: 3796SBC856ALT1G Datasheet
SBC856ALT1G
MFR Recommended
SBC856BLT1G
onsemiIn Stock: 35251SBC856BLT1G Datasheet
SBC856BLT1G
MFR Recommended
SBC856BLT3G
onsemiIn Stock: 25265SBC856BLT3G Datasheet
SBC856BLT3G
MFR Recommended
SMBT2907AE6327HTSA1
Infineon TechnologiesIn Stock: 4171SMBT2907AE6327HTSA1 Datasheet
SMBT2907AE6327HTSA1
MFR Recommended
SMMBT2907ALT1G
onsemiIn Stock: 35410SMMBT2907ALT1G Datasheet
SMMBT2907ALT1G
MFR Recommended
SMMBT2907ALT3G
onsemiIn Stock: 35469SMMBT2907ALT3G Datasheet
SMMBT2907ALT3G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type PNP
Collector Current (Max) 100 mA
Collector-Emitter Breakdown Voltage (Max) 65 V
Vce Saturation @ Ib, Ic 400 mV @ 5 mA, 100 mA
DC Current Gain (hFE) Min @ Ic, Vce 125 @ 2 mA, 5 V
Power Dissipation (Max) 150 mW
Transition Frequency 100 MHz
Operating Temperature (Max) 150 °C
Package Type SC-75 (SOT-416)
Mounting Type Surface Mount
Grade Automotive
Qualification AEC-Q101
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the BC856T,115 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Transistor polarity: PNP type required
  • Collector current rating: minimum 100 mA
  • Collector-emitter breakdown voltage: minimum 65 V
  • DC current gain (hFE): minimum 125 @ 2 mA, 5 V
  • Transition frequency: minimum 100 MHz
  • Power dissipation: minimum 150 mW
  • Operating temperature range: maximum junction temperature 150°C

Mechanical Compatibility Criteria:

  • Surface mount package: SC-75, TO-236-3, SC-59, or SOT-23-3 acceptable
  • Moisture sensitivity level: MSL 1 (Unlimited)
  • RoHS3 compliance required
  • Automotive grade and AEC-Q101 qualification preferred

Substitute parts are grouped into two categories based on package type: SC-75 direct replacements (BC856,215) and SOT-23-3 alternatives (BC856A-7-F, BC856A-TP, BC856ALT1G, BC856B-13-F, BC856B-7-F, BC856B-TP, BC856BLT1G, BC856BLT3G, BC856BQ-7-F). All listed substitutes meet or exceed the electrical specifications of the original part.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(br) V Vce Sat @ 5mA, 100mA hFE Min @ 2mA, 5V Power mW Freq MHz Package Status
BC856T,115 NXP USA Inc. 100 65 400 mV 125 150 100 SC-75 Obsolete
BC856,215 Nexperia USA Inc. 100 65 650 mV 125 250 100 TO-236AB Active
BC856A-7-F Diodes Incorporated 100 65 650 mV 125 300 200 SOT-23-3 Active
BC856A-TP Micro Commercial Co 100 65 650 mV 125 310 200 SOT-23 Active
BC856ALT1G onsemi 100 65 650 mV 125 300 100 SOT-23-3 Active
BC856B-13-F Diodes Incorporated 100 65 650 mV 220 310 200 SOT-23-3 Active
BC856B-7-F Diodes Incorporated 100 65 650 mV 220 300 200 SOT-23-3 Active
BC856B-TP Micro Commercial Co 100 65 650 mV 220 310 200 SOT-23 Active
BC856BLT1G onsemi 100 65 650 mV 220 300 100 SOT-23-3 Active
BC856BLT3G onsemi 100 65 650 mV 220 300 100 SOT-23-3 Active
BC856BQ-7-F Diodes Incorporated 100 65 650 mV 220 310 200 SOT-23-3 Active

Engineering Selection Recommendations

Primary Recommendation for SC-75 Package Continuity: BC856,215 (Nexperia USA Inc.) maintains the closest electrical alignment with the original BC856T,115. Both parts share identical collector current, breakdown voltage, and transition frequency specifications. The BC856,215 is manufactured by Nexperia, the successor entity to NXP's semiconductor operations, ensuring design continuity and process compatibility. This part is active in production with high inventory availability (94,210 units).

Alternative Recommendations for SOT-23-3 Package Migration: When PCB redesign to accommodate SOT-23-3 packaging is feasible, the following active parts provide enhanced performance characteristics:

BC856ALT1G (onsemi) and BC856BLT1G/BC856BLT3G (onsemi) maintain the 100 MHz transition frequency of the original part while offering increased power dissipation (300 mW) and improved thermal performance. These parts carry AEC-Q101 automotive qualification and are available in high volumes.

BC856A-7-F and BC856B-7-F (Diodes Incorporated) provide 200 MHz transition frequency with 300 mW power rating, offering enhanced switching speed for applications requiring faster response times. Both maintain the 65 V breakdown voltage and 100 mA collector current specifications.

Compliance and Qualification Status: All recommended substitutes maintain ROHS3 compliance, MSL 1 moisture sensitivity rating, and automotive-grade qualification. The BC856,215, BC856ALT1G, BC856BLT1G, BC856BLT3G, and all Diodes Incorporated variants carry AEC-Q101 certification, meeting automotive industry reliability standards.

Frequently Asked Questions (FAQ)

Q: Can BC856T,115 be directly replaced with BC856,215 without PCB modification?

A: BC856,215 uses TO-236AB packaging (equivalent to SOT-23-3), while BC856T,115 uses SC-75 (SOT-416). These packages have different pin configurations and footprints. Direct PCB replacement requires footprint redesign. However, electrical specifications are compatible for circuit functionality.

Q: What is the difference between BC856A and BC856B variants?

A: BC856A variants specify minimum DC current gain (hFE) of 125 @ 2 mA, 5 V. BC856B variants specify minimum hFE of 220 @ 2 mA, 5 V. Both meet the original BC856T,115 requirement of 125 minimum. BC856B provides higher current gain margin for applications requiring tighter gain control.

Q: Are all listed substitutes automotive-qualified?

A: All substitutes carry AEC-Q101 automotive qualification and automotive-grade designation. This ensures compliance with automotive reliability and environmental stress testing requirements equivalent to the original part.

Q: What is the impact of higher Vce saturation voltage in substitute parts?

A: Substitute parts specify 650 mV Vce saturation @ 5 mA, 100 mA compared to 400 mV for the original BC856T,115. This represents increased voltage drop in saturation mode, resulting in slightly higher power dissipation in saturated switching applications. The increased power rating (250-310 mW vs. 150 mW) of substitutes accommodates this difference.

Q: Can SOT-23-3 packaged parts be used in applications originally designed for SC-75?

A: SOT-23-3 and SC-75 packages are not mechanically interchangeable. SOT-23-3 substitution requires PCB redesign to accommodate the different footprint and pin spacing. Electrical functionality remains compatible when circuit design parameters are maintained.

Q: Which substitute offers the best thermal performance?

A: BC856A-TP, BC856B-TP, BC856A-7-F, BC856B-7-F, BC856B-13-F, and BC856BQ-7-F all offer 300-310 mW power dissipation, compared to 150 mW for the original part. These provide superior thermal headroom for high-frequency or high-current switching applications.

Q: Is inventory availability a consideration for part selection?

A: BC856BLT1G (onsemi) offers the highest inventory availability at 1,495,300 units. BC856B-7-F (Diodes Incorporated) provides 126,300 units. BC856,215 (Nexperia) offers 94,210 units. Availability should be evaluated against supply chain requirements and production volume forecasts.

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