BC856BW-G Equivalent & Substitute Parts

Part Overview

The BC856BW-G is a PNP bipolar junction transistor manufactured by Comchip Technology, designed for general-purpose switching and amplification applications. This surface mount device operates at 65 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and 150 mW power dissipation. The part is Active status and RoHS3 compliant, making it suitable for modern electronic applications requiring small-signal PNP transistor functionality in SOT-323 packaging.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative manufacturers offer improved inventory availability, or when design requirements permit operation within the specified parameter ranges of alternative devices.

Substiute Parts

BC856BW-G
Comchip TechnologyIn Stock: 855BC856BW-G Datasheet
BC856BW-G
Current Part
SBC856BWT1G
onsemiIn Stock: 17529SBC856BWT1G Datasheet
SBC856BWT1G
Direct
BC856BW,115
Nexperia USA Inc.In Stock: 4277BC856BW,115 Datasheet
BC856BW,115
MFR Recommended
BC856BW-7-F
Diodes IncorporatedIn Stock: 179206BC856BW-7-F Datasheet
BC856BW-7-F
MFR Recommended
BC856W,135
NXP USA Inc.In Stock: 25316BC856W,135 Datasheet
BC856W,135
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type PNP
Collector Current (Max) 100 mA
Collector-Emitter Breakdown Voltage (Max) 65 V
Power Dissipation (Max) 150 mW
Transition Frequency 100 MHz
DC Current Gain (hFE Min) 220 @ 2.2 mA, 5V
Vce Saturation (Max) 650 mV @ 5mA, 100mA
Package Type SOT-323 (SC-70)
Operating Temperature Range -65 to 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the BC856BW-G is determined by strict equivalence in the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Transistor polarity: PNP
  • Collector current rating: 100 mA maximum
  • Collector-emitter breakdown voltage: 65 V
  • Package type: SOT-323 (SC-70)
  • Surface mount configuration
  • RoHS3 compliance

Allowable Variation Parameters:

  • Power dissipation: 150 mW or higher
  • Transition frequency: 100 MHz or higher
  • DC current gain (hFE): 125 or higher at specified conditions
  • Vce saturation: 600–650 mV range
  • Operating temperature range: -55°C to 150°C or wider

Substitute parts must maintain electrical functionality within the specified voltage and current ratings while meeting or exceeding frequency and power handling capabilities. All substitute parts listed are Active status and RoHS3 compliant.

Parameter Comparison

Parameter BC856BW-G (Comchip) SBC856BWT1G (onsemi) BC856BW,115 (Nexperia) BC856BW-7-F (Diodes) BC856W,135 (NXP)
Manufacturer Comchip Technology onsemi Nexperia USA Inc. Diodes Incorporated NXP USA Inc.
Transistor Type PNP PNP PNP PNP PNP
Ic (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Vce Breakdown (Max) 65 V 65 V 65 V 65 V 65 V
Power (Max) 150 mW 150 mW 200 mW 200 mW 200 mW
Frequency - Transition 100 MHz 100 MHz 100 MHz 200 MHz 100 MHz
hFE (Min) @ Ic, Vce 220 @ 2.2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V 125 @ 2mA, 5V
Vce Saturation (Max) 650 mV @ 5mA, 100mA 650 mV @ 5mA, 100mA 600 mV @ 5mA, 100mA 650 mV @ 5mA, 100mA 600 mV @ 5mA, 100mA
Operating Temperature -65 to 150°C -55 to 150°C 150°C (Max) -65 to 150°C 150°C (Max)
Package SOT-323 SC-70-3 (SOT323) SOT-323 SOT-323 SOT-323
Automotive Grade Yes (AEC-Q101) Yes (AEC-Q101) Yes (AEC-Q101)
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Inventory (Pcs) 830 17463 4200 179100 25279

Engineering Selection Recommendations

SBC856BWT1G (onsemi): This substitute meets all electrical parameters of the BC856BW-G with identical power and frequency ratings. The part carries AEC-Q101 automotive qualification and is RoHS3 compliant. Operating temperature range is -55°C to 150°C, which is narrower at the lower end but sufficient for most applications. Inventory availability is significantly higher at 17,463 pieces.

BC856BW,115 (Nexperia USA Inc.): This part exceeds the power rating at 200 mW and maintains identical electrical specifications. AEC-Q101 automotive qualification is included. Operating temperature specification lists 150°C maximum without lower bound specification. RoHS3 compliant. Inventory is 4,200 pieces.

BC856BW-7-F (Diodes Incorporated): This substitute offers enhanced transition frequency at 200 MHz, exceeding the 100 MHz specification of the main part. Power dissipation is 200 mW. All other electrical parameters match or exceed the BC856BW-G. Operating temperature range is -65°C to 150°C, matching the main part. RoHS3 compliant. Inventory availability is highest at 179,100 pieces.

BC856W,135 (NXP USA Inc.): This part meets core electrical specifications with 200 mW power rating and AEC-Q101 automotive qualification. DC current gain minimum is 125, which is lower than the 220 specification of the main part. Operating temperature specification lists 150°C maximum. RoHS3 compliant. Inventory is 25,279 pieces. This part is suitable for applications where lower current gain is acceptable.

All substitute parts are Active status and maintain SOT-323 surface mount packaging compatibility with the BC856BW-G.

Frequently Asked Questions (FAQ)

Q: Can BC856BW-G be directly replaced with SBC856BWT1G?

A: Yes. Both parts are PNP transistors with identical 100 mA collector current, 65 V breakdown voltage, and SOT-323 packaging. Electrical performance is equivalent. The operating temperature range of SBC856BWT1G is -55°C to 150°C compared to -65°C to 150°C for BC856BW-G; verify application requirements at temperatures below -55°C.

Q: What is the difference between BC856BW-7-F and BC856BW-G?

A: BC856BW-7-F has a transition frequency of 200 MHz compared to 100 MHz for BC856BW-G, and power dissipation of 200 mW versus 150 mW. All other electrical parameters are equivalent. BC856BW-7-F is suitable for higher-frequency applications and provides additional thermal margin.

Q: Is BC856W,135 a suitable substitute?

A: BC856W,135 meets the core voltage and current specifications. However, the DC current gain minimum is 125 compared to 220 for BC856BW-G. This part is suitable only if circuit design does not depend on the higher current gain specification. Verify amplification requirements before substitution.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are RoHS3 compliant, matching the compliance status of BC856BW-G.

Q: Which substitute has the best inventory availability?

A: BC856BW-7-F (Diodes Incorporated) has the highest inventory at 179,100 pieces. This part also offers enhanced transition frequency at 200 MHz.

Q: Can these parts be used in automotive applications?

A: SBC856BWT1G, BC856BW,115, and BC856W,135 carry AEC-Q101 automotive qualification. BC856BW-G and BC856BW-7-F do not list automotive qualification. Verify automotive requirements for your specific application.

Q: Is the SOT-323 package identical across all substitute parts?

A: Yes. All parts use SOT-323 (SC-70) surface mount packaging with identical pinout and footprint compatibility.

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