BC856AW,135 Equivalent & Substitute Parts

Part Overview

The BC856AW,135 is a PNP bipolar junction transistor manufactured by Nexperia USA Inc., designed for surface mount applications in the SOT-323 package. This component operates at a maximum collector current of 100 mA, collector-emitter breakdown voltage of 65 V, and maximum power dissipation of 200 mW. The device is qualified to AEC-Q101 automotive standards and carries Active product status. Alternative equivalent and substitute parts are identified to support design flexibility, supply chain continuity, and application-specific performance requirements.

Substiute Parts

BC856AW,135
Nexperia USA Inc.In Stock: 10897BC856AW,135 Datasheet
BC856AW,135
Current Part
BC856AW,115
Nexperia USA Inc.In Stock: 4210BC856AW,115 Datasheet
BC856AW,115
Parametric Equivalent
BC856BW-QX
Nexperia USA Inc.In Stock: 1257BC856BW-QX Datasheet
BC856BW-QX
Parametric Equivalent
BC856W,115
Nexperia USA Inc.In Stock: 20471BC856W,115 Datasheet
BC856W,115
Parametric Equivalent
BC856W,135
NXP USA Inc.In Stock: 25316BC856W,135 Datasheet
BC856W,135
Parametric Equivalent
BC856AW-7-F
Diodes IncorporatedIn Stock: 9046BC856AW-7-F Datasheet
BC856AW-7-F
Direct
BC856A-TP
Micro Commercial CoIn Stock: 4069BC856A-TP Datasheet
BC856A-TP
Similar
BC856BW-7-F
Diodes IncorporatedIn Stock: 179206BC856BW-7-F Datasheet
BC856BW-7-F
Similar
BC856BWT1G
onsemiIn Stock: 38199BC856BWT1G Datasheet
BC856BWT1G
Similar
DSS5160U-7
Diodes IncorporatedIn Stock: 6317DSS5160U-7 Datasheet
DSS5160U-7
Similar
MMBT2907AWT1G
onsemiIn Stock: 455310MMBT2907AWT1G Datasheet
MMBT2907AWT1G
Similar
MMST2907A-7-F
Diodes IncorporatedIn Stock: 15883MMST2907A-7-F Datasheet
MMST2907A-7-F
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) Max 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V
Vce Saturation (Max) @ Ib, Ic 600 mV @ 5 mA, 100 mA
Current - Collector Cutoff (Max) 15 nA
DC Current Gain (hFE) Min @ Ic, Vce 125 @ 2 mA, 5 V
Power - Max 200 mW
Frequency - Transition 100 MHz
Operating Temperature (TJ) 150 °C
Package / Case SC-70, SOT-323
Mounting Type Surface Mount
Grade Automotive
Qualification AEC-Q101
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the BC856AW,135 is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

  • Transistor Type: PNP
  • Current - Collector (Ic) Max: 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 65 V
  • DC Current Gain (hFE) Min @ Ic, Vce: 125 @ 2 mA, 5 V
  • Power - Max: 200 mW
  • Package / Case: SC-70, SOT-323
  • Mounting Type: Surface Mount

Parametric Equivalent Parts maintain all critical electrical specifications and package requirements, differing only in manufacturer, packaging format (Tape & Reel vs. Bulk), or minor variant designations. These parts are direct functional replacements.

Direct Manufacturer Equivalent Parts originate from alternative manufacturers (Diodes Incorporated) and maintain electrical specifications with minor variations in transition frequency or saturation voltage that remain within acceptable operating ranges for the BC856 series.

Similar Parts share the same base product number (BC856) but may differ in package type (SOT-23 vs. SOT-323), power dissipation rating, or DC current gain specifications. These parts are suitable for applications where package constraints or performance headroom allow for such variations.

Parameter Comparison

Part Number Manufacturer Ic Max (mA) Vce Breakdown (V) Vce Sat @ 5mA, 100mA (mV) hFE Min @ 2mA, 5V Power Max (mW) Frequency (MHz) Package Grade
BC856AW,135 Nexperia USA Inc. 100 65 600 125 200 100 SOT-323 Automotive
BC856AW,115 Nexperia USA Inc. 100 65 600 125 200 100 SOT-323 Automotive
BC856BW-QX Nexperia USA Inc. 100 65 600 125 200 100 SOT-323 Automotive
BC856W,115 Nexperia USA Inc. 100 65 600 125 200 100 SOT-323 Automotive
BC856W,135 NXP USA Inc. 100 65 600 125 200 100 SOT-323 Automotive
BC856AW-7-F Diodes Incorporated 100 65 650 125 200 200 SOT-323
BC856A-TP Micro Commercial Co 100 65 650 125 310 200 SOT-23
BC856BW-7-F Diodes Incorporated 100 65 650 220 200 200 SOT-323
BC856BWT1G onsemi 100 65 650 220 150 100 SOT-323
DSS5160U-7 Diodes Incorporated 1000 60 340 150 400 150 SOT-323
MMBT2907AWT1G onsemi 600 60 1600 100 150 200 SOT-323

Engineering Selection Recommendations

Parametric Equivalent Selection (Nexperia Parts): BC856AW,115, BC856BW-QX, BC856W,115, and BC856W,135 are parametric equivalents manufactured by Nexperia USA Inc. and NXP USA Inc. These parts maintain identical electrical specifications and automotive AEC-Q101 qualification. Selection among these variants is determined by packaging format availability (Tape & Reel or Bulk) and inventory requirements. All variants are Active product status and suitable for direct substitution in automotive-grade applications.

Direct Manufacturer Equivalent (Diodes Incorporated): BC856AW-7-F is manufactured by Diodes Incorporated and maintains the 100 mA collector current, 65 V breakdown voltage, and 200 mW power rating. This part exhibits a transition frequency of 200 MHz (double the main part) and slightly elevated saturation voltage (650 mV vs. 600 mV). The extended operating temperature range (-65°C to 150°C) provides additional thermal margin. This part is suitable for applications where higher frequency performance or extended temperature operation is beneficial.

Similar Parts with Package Variation: BC856A-TP (Micro Commercial Co) is packaged in SOT-23 instead of SOT-323. This part offers 310 mW power dissipation (55% higher than the main part) and 200 MHz transition frequency. Selection of this variant requires PCB layout compatibility with the larger SOT-23 footprint.

Similar Parts with Gain Variation: BC856BW-7-F and BC856BWT1G feature elevated DC current gain (hFE = 220 @ 2 mA, 5 V) compared to the main part (hFE = 125). These parts are suitable for applications requiring higher current amplification. BC856BWT1G is manufactured by onsemi with 150 mW power rating, while BC856BW-7-F is manufactured by Diodes Incorporated with 200 mW power rating and 200 MHz transition frequency.

Higher Current Alternatives: DSS5160U-7 and MMBT2907AWT1G are higher-current PNP transistors in SOT-323 packaging. DSS5160U-7 supports 1 A collector current at 60 V breakdown voltage. MMBT2907AWT1G supports 600 mA collector current at 60 V breakdown voltage. These parts are suitable for applications requiring higher current handling capacity, though they operate at reduced breakdown voltage (60 V vs. 65 V).

Frequently Asked Questions (FAQ)

Q: Can BC856AW,115 be used as a direct replacement for BC856AW,135?

A: Yes. BC856AW,115 is a parametric equivalent manufactured by Nexperia USA Inc. with identical electrical specifications: 100 mA collector current, 65 V breakdown voltage, 600 mV saturation voltage, 125 hFE minimum, 200 mW power rating, and 100 MHz transition frequency. Both parts are packaged in SOT-323 and qualified to AEC-Q101 automotive standards. The difference in part number designation reflects packaging format or manufacturing lot tracking only.

Q: What is the difference between BC856AW-7-F and BC856AW,135?

A: BC856AW-7-F is manufactured by Diodes Incorporated, while BC856AW,135 is manufactured by Nexperia USA Inc. Both maintain 100 mA collector current, 65 V breakdown voltage, and 200 mW power rating in SOT-323 packaging. BC856AW-7-F exhibits 200 MHz transition frequency (vs. 100 MHz for the main part) and 650 mV saturation voltage (vs. 600 mV). The extended operating temperature range of BC856AW-7-F (-65°C to 150°C) provides additional thermal margin compared to the main part specification of 150°C maximum.

Q: Can BC856A-TP replace BC856AW,135 in my design?

A: BC856A-TP is a similar part with the same electrical specifications (100 mA, 65 V, 125 hFE minimum) but differs in package type. BC856A-TP uses SOT-23 packaging instead of SOT-323. This requires verification of PCB footprint compatibility. BC856A-TP also offers 310 mW power dissipation (vs. 200 mW for the main part) and 200 MHz transition frequency. Substitution is feasible only if the SOT-23 footprint is compatible with your PCB layout.

Q: Why would I select BC856BW-7-F over BC856AW,135?

A: BC856BW-7-F is selected when higher current amplification is required. This part features DC current gain of 220 (vs. 125 for the main part), providing approximately 76% higher gain at the same bias conditions. BC856BW-7-F also offers 200 MHz transition frequency (vs. 100 MHz) and operates across an extended temperature range (-65°C to 150°C). These characteristics are beneficial for low-signal amplification stages or applications requiring improved frequency response.

Q: Are DSS5160U-7 and MMBT2907AWT1G suitable replacements for BC856AW,135?

A: DSS5160U-7 and MMBT2907AWT1G are not direct replacements. Both are higher-current PNP transistors in SOT-323 packaging but operate at reduced breakdown voltage (60 V vs. 65 V). DSS5160U-7 supports 1 A collector current, while MMBT2907AWT1G supports 600 mA. These parts are suitable only for applications where the lower breakdown voltage is acceptable and higher current handling is required. Substitution requires circuit analysis to confirm voltage and current margins remain adequate.

Q: What is the significance of the packaging designation (Tape & Reel vs. Bulk)?

A: Packaging designation indicates the form factor for component delivery and handling. Tape & Reel (TR) packaging is standard for automated assembly processes and high-volume production. Bulk packaging is used for manual assembly or lower-volume applications. The electrical specifications and performance of the transistor are identical regardless of packaging format. Selection is determined by manufacturing process requirements and inventory management practices.

Q: Are all substitute parts RoHS3 compliant?

A: All Nexperia USA Inc., NXP USA Inc., and Diodes Incorporated parts listed are RoHS3 compliant. onsemi parts (BC856BWT1G and MMBT2907AWT1G) and Micro Commercial Co part (BC856A-TP) are also RoHS3 compliant. All parts carry Moisture Sensitivity Level 1 (Unlimited), indicating no special moisture handling requirements during storage or assembly.

Q: What is the difference between BC856W,115 and BC856W,135?

A: BC856W,115 and BC856W,135 are parametric equivalents with identical electrical specifications. Both are manufactured by Nexperia USA Inc. (BC856W,135 is listed under NXP USA Inc., which is the parent company). The difference in designation reflects manufacturing lot tracking or packaging format. Both parts maintain 100 mA collector current, 65 V breakdown voltage, 600 mV saturation voltage, 125 hFE minimum, 200 mW power rating, and 100 MHz transition frequency in SOT-323 packaging.

Q: Can I use BC856BWT1G if my application requires 200 mW power dissipation?

A: BC856BWT1G is rated for 150 mW maximum power dissipation, which is 25% lower than the main part specification of 200 mW. Substitution is feasible only if your application power dissipation remains below 150 mW. If your design requires the full 200 mW capability, BC856BWT1G is not suitable. Alternative parts maintaining 200 mW rating include BC856AW-7-F, BC856BW-7-F, and DSS5160U-7.

Request Quote (Ships tomorrow)