BC850C Equivalent & Substitute Parts

Part Overview

The BC850C is an NPN bipolar junction transistor manufactured by Diotec Semiconductor in SOT-23 surface mount packaging. This device is rated for 45V collector-emitter breakdown voltage, 100mA maximum collector current, and 250mW power dissipation with a transition frequency of 300MHz. The BC850C is classified as an active product with 95,300 pieces in current inventory.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative manufacturers offer improved lead times, or when design requirements permit operation within the electrical and mechanical parameters of functionally compatible devices. Substitution is valid only when all critical electrical parameters remain within specified limits and package compatibility is maintained.

Key Parameters

Parameter	BC850C Value	Unit
Transistor Type	NPN	—
Collector-Emitter Breakdown Voltage (Max)	45	V
Collector Current (Max)	100	mA
Power Dissipation (Max)	250	mW
Transition Frequency	300	MHz
Vce Saturation @ 5mA, 100mA	600	mV
DC Current Gain (hFE) @ 2mA, 5V	420	—
Collector Cutoff Current (ICBO)	15	nA
Operating Temperature Range	-55 to 150	°C
Package Type	SOT-23-3 (TO-236)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of NPN bipolar junction transistors is determined by the following critical parameters:

Voltage Rating: The substitute part must have a collector-emitter breakdown voltage equal to or greater than the original part. The BC850C specifies 45V maximum; therefore, substitute parts must support 45V or higher.

Current Rating: The substitute part must support the maximum collector current of 100mA or greater.

Power Dissipation: The substitute part must have power dissipation capability equal to or greater than the original specification of 250mW.

Package Compatibility: The substitute part must use the same surface mount package (SOT-23-3, TO-236, or SC-59 equivalent) to ensure PCB footprint compatibility.

DC Current Gain (hFE): The substitute part must meet or exceed the minimum DC current gain specification of 420 at the specified test conditions (2mA, 5V).

Saturation Voltage: The substitute part must have saturation voltage characteristics compatible with the original specification of 600mV at the specified conditions.

Operating Temperature: The substitute part must support the full operating temperature range of -55°C to 150°C.

Parts that fail to meet any of these criteria are not suitable substitutes and are excluded from this reference.

Parameter Comparison

Part Number	Manufacturer	Vce(BR) Max (V)	Ic Max (mA)	Power Max (mW)	fT (MHz)	hFE Min @ 2mA, 5V	Vce Sat (mV)	Package	Status
BC850C	Diotec Semiconductor	45	100	250	300	420	600	SOT-23-3	Active
BC847C	Taiwan Semiconductor Corporation	45	100	200	100	420	500	SOT-23-3	Active
BC847A RFG	Taiwan Semiconductor Corporation	45	100	200	100	110	500	SOT-23-3	Active
BC847B RFG	Taiwan Semiconductor Corporation	45	100	200	100	200	500	SOT-23-3	Active
BC847B-TP	Micro Commercial Co	45	100	225	100	200	500	SOT-23-3	Active
BC847BWH6433XTMA1	Infineon Technologies	45	100	250	250	200	600	SOT-323	Obsolete
BC847C RFG	Taiwan Semiconductor Corporation	45	100	200	100	420	500	SOT-23-3	Active
BC847C-TP	Micro Commercial Co	45	100	225	100	420	500	SOT-23-3	Active
BC847CLT1G	onsemi	45	100	300	100	420	600	SOT-23-3	Active
BC848BT116	Rohm Semiconductor	30	100	350	200	200	600	SOT-23-3	Active
BC850B,215	Nexperia USA Inc.	45	100	250	100	200	600	SOT-23-3	Active

Engineering Selection Recommendations

Primary Equivalent: BC847CLT1G (onsemi) meets all critical electrical parameters of the BC850C. This part maintains 45V voltage rating, 100mA current capability, 300mW power dissipation, and identical DC current gain specification of 420 at the test conditions. The part is active and ROHS3 compliant. The transition frequency of 100MHz is lower than the BC850C specification of 300MHz; however, this represents a conservative substitution suitable for applications not requiring the higher frequency performance.

Secondary Equivalent: BC847C (Taiwan Semiconductor Corporation) provides full voltage and current compatibility with 45V rating and 100mA maximum collector current. The DC current gain matches the BC850C at 420 minimum. Power dissipation is specified at 200mW, which is lower than the original 250mW specification. This part is suitable for applications where the reduced power rating does not constrain thermal design. The part is active and ROHS3 compliant.

Conditional Equivalent: BC850B,215 (Nexperia USA Inc.) maintains identical voltage, current, and power specifications to the BC850C with 45V rating, 100mA current, and 250mW power dissipation. The DC current gain is specified at 200 minimum, which is lower than the BC850C specification of 420. This part is suitable only for applications where the lower current gain does not affect circuit performance. The part is active, ROHS3 compliant, and carries AEC-Q101 automotive qualification.

Not Recommended: BC848BT116 (Rohm Semiconductor) has a maximum collector-emitter breakdown voltage of 30V, which is below the BC850C specification of 45V. This part does not meet the voltage substitution criterion and is not suitable for direct replacement.

Not Recommended: BC847BWH6433XTMA1 (Infineon Technologies) is classified as obsolete and should not be selected for new designs or ongoing production.

Frequently Asked Questions (FAQ)

Q: Can BC847C be used as a direct replacement for BC850C?

A: BC847C is electrically compatible with BC850C for voltage and current ratings. Both parts support 45V collector-emitter breakdown voltage and 100mA maximum collector current. The DC current gain specification of 420 is identical. The primary difference is power dissipation: BC847C is rated at 200mW compared to BC850C at 250mW. If the circuit design does not require the full 250mW power capability, BC847C is a suitable substitute. Both parts use identical SOT-23-3 packaging.

Q: What is the difference between BC847CLT1G and BC847C?

A: BC847CLT1G is manufactured by onsemi and is supplied in Cut Tape and Digi-Reel packaging. BC847C is manufactured by Taiwan Semiconductor Corporation. Both parts have identical electrical specifications: 45V voltage rating, 100mA current, 420 minimum DC current gain, and SOT-23-3 package. BC847CLT1G offers 300mW power dissipation compared to BC847C at 200mW, making BC847CLT1G more closely matched to the BC850C power specification. Both parts are active and ROHS3 compliant.

Q: Why is BC848BT116 not recommended as a substitute?

A: BC848BT116 has a maximum collector-emitter breakdown voltage of 30V, which is below the BC850C specification of 45V. Using a part with lower voltage rating in a circuit designed for 45V operation creates risk of device failure. This part does not meet the voltage substitution criterion and is excluded from equivalent parts.

Q: Are all substitute parts available in the same package as BC850C?

A: All recommended substitute parts use SOT-23-3 (TO-236) surface mount packaging, which is identical to the BC850C package. This ensures PCB footprint compatibility without requiring layout modifications. BC847BWH6433XTMA1 uses SOT-323 packaging, which has different pin spacing and is not footprint compatible.

Q: What is the significance of the DC current gain (hFE) specification?

A: DC current gain determines the amplification factor of the transistor. The BC850C specifies a minimum hFE of 420 at 2mA collector current and 5V collector-emitter voltage. Substitute parts with lower hFE values (such as BC847A RFG at 110 or BC847B RFG at 200) will have reduced amplification capability. Selection of a lower hFE part is acceptable only if the circuit design does not depend on the higher gain specification.

Q: Can BC850B,215 replace BC850C in all applications?

A: BC850B,215 maintains the same voltage rating (45V), current rating (100mA), and power dissipation (250mW) as BC850C. However, the DC current gain is specified at 200 minimum compared to BC850C at 420 minimum. This represents a 52% reduction in current gain. Substitution is valid only for applications where the circuit design accommodates the lower gain specification. BC850B,215 carries AEC-Q101 automotive qualification, making it suitable for automotive applications where BC850C may not be qualified.

Q: What does ROHS3 compliance mean for substitution?

A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements. All recommended active substitute parts are ROHS3 compliant, ensuring environmental and regulatory compatibility with the BC850C. This compliance status does not affect electrical substitution but confirms regulatory alignment for production use.

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