BC850AW Equivalent & Substitute Parts

Part Overview

The BC850AW is an NPN bipolar junction transistor manufactured by Taiwan Semiconductor Corporation, designed for small-signal switching and amplification applications. This surface-mount device operates at 45V collector-emitter breakdown voltage with a maximum collector current of 100mA and 200mW power dissipation. The part is classified as Active product status with full RoHS3 compliance and REACH unaffected designation. Equivalent and substitute parts are identified to support design flexibility, supply chain continuity, and application-specific performance requirements where parametric compatibility is maintained.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	45	V
Current - Collector (Ic) (Max)	100	mA
Power - Max	200	mW
Frequency - Transition	100	MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 2mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA	—
Current - Collector Cutoff (Max)	15	nA
Operating Temperature Range	-55 to 150	°C
Package / Case	SC-70, SOT-323	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the BC850AW is determined by strict equivalence across the following critical parameters: NPN transistor type, 45V collector-emitter breakdown voltage, 100mA maximum collector current, 200mW power dissipation, SOT-323 surface-mount package, and operating temperature range compatibility. Parts are grouped into two categories:

Direct Substitutes maintain all electrical specifications and package requirements, differing only in manufacturer, product line designation, or packaging format (Tape & Reel versus Bulk).

Parametric Equivalents satisfy the core electrical requirements (voltage, current, power, package) but may exhibit variations in transition frequency, DC current gain, saturation voltage, or temperature range that remain within acceptable application tolerances. These parts are suitable where the application does not demand the exact specifications of the primary part.

All substitute parts listed maintain RoHS3 compliance and REACH unaffected status unless otherwise specified.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce(br) V	Power mW	fT MHz	hFE @ 2mA, 5V	Vce Sat mV	Temp Range °C	Package
BC850AW	Taiwan Semiconductor	100	45	200	100	110	600	-55 to 150	SOT-323
BC847AW-7-F	Diodes Incorporated	100	45	200	300	110	600	-65 to 150	SOT-323
BC847BW,115	NXP USA Inc.	100	45	200	100	200	400	-55 to 150	SOT-323
BC847BW-TP	Micro Commercial Co	100	45	200	100	200	600	-65 to 150	SOT-323
BC847CWT1G	onsemi	100	45	150	100	420	600	-55 to 150	SOT-323
SBC847CWT1G	onsemi	100	45	150	100	420	600	-55 to 150	SOT-323
BC847AW,115	NXP Semiconductors	100	45	200	100	110	400	-55 to 150	SOT-323
BC847AW,135	Nexperia USA Inc.	100	45	200	100	110	400	-55 to 150	SOT-323
BC847W,115	Nexperia USA Inc.	100	45	200	100	110	400	-55 to 150	SOT-323
BC847W,135	NXP USA Inc.	100	45	200	100	110	400	-55 to 150	SOT-323

Engineering Selection Recommendations

Direct Substitution (Highest Compatibility)

BC847AW,115, BC847AW,135, BC847W,115, and BC847W,135 are direct parametric equivalents to the BC850AW. These parts maintain identical electrical specifications across collector current, breakdown voltage, power dissipation, transition frequency, and operating temperature range. All are manufactured by NXP/Nexperia and carry RoHS3 compliance. Selection among these variants depends on packaging format availability (Tape & Reel or Bulk) and inventory status.

Extended Substitution (Acceptable Variations)

BC847AW-7-F (Diodes Incorporated) provides superior transition frequency (300MHz versus 100MHz) and extended lower temperature operation (-65°C minimum). This part is suitable for applications requiring higher-frequency performance or broader temperature range.

BC847BW,115 and BC847BW-TP offer higher DC current gain (200 versus 110) and lower saturation voltage (400mV versus 600mV), beneficial for switching applications requiring faster response or reduced power dissipation in saturation. BC847BW,115 carries AEC-Q101 automotive qualification.

BC847CWT1G and SBC847CWT1G (onsemi) feature the highest DC current gain (420) and reduced power rating (150mW). SBC847CWT1G includes AEC-Q101 automotive qualification. These parts are suitable for low-power applications or where higher current gain improves circuit efficiency.

Compliance and Certification

All listed substitute parts maintain RoHS3 compliance and REACH unaffected status. Parts designated with AEC-Q101 qualification (BC847BW,115, BC847W,135, SBC847CWT1G) are suitable for automotive applications requiring formal qualification documentation.

Frequently Asked Questions (FAQ)

Q: Can BC847AW-7-F replace BC850AW in all applications?

A: BC847AW-7-F is electrically compatible with BC850AW across all critical parameters (voltage, current, power, package). The higher transition frequency (300MHz) and extended temperature range (-65°C minimum) provide additional performance margin. Substitution is valid for standard applications.

Q: What is the difference between BC847BW and BC847AW variants?

A: BC847BW variants feature higher DC current gain (200 minimum versus 110 minimum) and lower saturation voltage (400mV versus 600mV). These characteristics make BC847BW more suitable for switching applications where faster saturation and reduced power loss are beneficial. Both maintain identical voltage and current ratings.

Q: Are onsemi BC847CWT1G and SBC847CWT1G interchangeable?

A: BC847CWT1G and SBC847CWT1G are electrically identical. The "S" prefix in SBC847CWT1G indicates automotive-grade qualification (AEC-Q101). Both parts are suitable for the BC850AW application; selection depends on whether automotive qualification is required.

Q: Does the 150mW power rating of BC847CWT1G limit its use as a BC850AW substitute?

A: The BC847CWT1G 150mW rating is lower than the BC850AW 200mW specification. Substitution is valid only where the application circuit dissipates less than 150mW in the transistor. Circuit analysis is required to confirm power dissipation remains within the lower limit.

Q: What packaging options are available for BC850AW substitutes?

A: All substitute parts use SOT-323 surface-mount package (also designated SC-70). Packaging format varies between Tape & Reel (TR) and Bulk. Tape & Reel format is standard for automated assembly; Bulk format is used for manual assembly or lower-volume applications. Package dimensions and pinout are identical across all listed parts.

Q: Are there temperature range limitations when substituting BC850AW?

A: BC850AW operates from -55°C to 150°C. Most substitutes maintain this range. BC847AW-7-F and BC847BW-TP extend the lower limit to -65°C, providing broader temperature coverage. Applications operating above 150°C or below -55°C require verification that the substitute part meets the required range.

Q: Which substitute offers the best performance for high-frequency switching?

A: BC847AW-7-F provides the highest transition frequency at 300MHz, compared to 100MHz for BC850AW and most other substitutes. This part is optimal for applications requiring faster switching speed or higher-frequency signal processing.

Q: Can I use BC847CWT1G in a design originally specified for BC850AW?

A: BC847CWT1G is compatible with BC850AW provided the application circuit dissipates less than 150mW (the lower power rating). The higher DC current gain (420 versus 110) may improve circuit performance in amplification or switching applications. Circuit verification is required to confirm power dissipation compliance.

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