BC850AMTF Equivalent & Substitute Parts

Part Overview

The BC850AMTF is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a 45 V collector-emitter breakdown voltage, 100 mA maximum collector current, and 300 MHz transition frequency in a surface mount SOT-23-3 package. The BC850AMTF is classified as obsolete, making identification of active equivalent and substitute parts essential for ongoing design support and procurement continuity.

Key Parameters

Parameter	BC850AMTF Value	Unit
Transistor Type	NPN	—
Collector-Emitter Breakdown Voltage (Max)	45	V
Collector Current (Max)	100	mA
Transition Frequency	300	MHz
Power Dissipation (Max)	310	mW
Vce Saturation (Max) @ Ib, Ic	600 mV @ 5 mA, 100 mA	—
DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 2 mA, 5 V	—
Collector Cutoff Current (Max)	15	nA
Package / Case	SOT-23-3 (TO-236-3, SC-59)	—
Mounting Type	Surface Mount	—
Operating Temperature (Max)	150	°C
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the BC850AMTF is determined by strict alignment of the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

Transistor Type: NPN
Collector-Emitter Breakdown Voltage: 45 V (minimum)
Package / Case: SOT-23-3 (TO-236-3, SC-59)
Mounting Type: Surface Mount
Collector Current Rating: 100 mA or greater

Allowable Variation Parameters:

Transition Frequency: 100 MHz or greater (BC850AMTF specifies 300 MHz; lower frequencies remain functionally compatible for most applications)
DC Current Gain (hFE): Minimum 110 @ 2 mA, 5 V (higher gains are acceptable)
Power Dissipation: 300 mW or greater (BC850AMTF specifies 310 mW)
Operating Temperature Range: Must include 150°C maximum junction temperature
Vce Saturation: 600 mV @ 5 mA, 100 mA or lower

Substitute Categories:

Direct Equivalents (100 mA Collector Current):

BC847ALT1G: Active status, identical electrical specifications except transition frequency reduced to 100 MHz
BC847BLT1G: Active status, higher DC current gain (200 @ 2 mA, 5 V)
BC847BLT3G: Active status, higher DC current gain (200 @ 2 mA, 5 V)
BC847CLT1G: Active status, highest DC current gain (420 @ 2 mA, 5 V)

Higher Current Capability Substitutes (500 mA Collector Current):

BC817-16LT1G: Active status, 500 mA collector current, 100 MHz transition frequency
BC817-16LT3G: Active status, 500 mA collector current, 100 MHz transition frequency
BC817-25LT1G: Active status, 500 mA collector current, higher DC current gain (160 @ 100 mA, 1 V)
BC817-25LT3G: Active status, 500 mA collector current, higher DC current gain (160 @ 100 mA, 1 V)
BC817-40LT1G: Active status, 500 mA collector current, highest DC current gain (250 @ 100 mA, 1 V)
BC817-40LT3G: Active status, 500 mA collector current, highest DC current gain (250 @ 100 mA, 1 V)

All substitute parts maintain the 45 V collector-emitter breakdown voltage, SOT-23-3 package, and surface mount configuration required for direct replacement.

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic (Max) mA	Vce(br)max V	fT MHz	hFE (Min)	Power mW	Package	RoHS Status
BC850AMTF	onsemi	Obsolete	100	45	300	110 @ 2mA, 5V	310	SOT-23-3	—
BC847ALT1G	onsemi	Active	100	45	100	110 @ 2mA, 5V	300	SOT-23-3	ROHS3 Compliant
BC847BLT1G	onsemi	Active	100	45	100	200 @ 2mA, 5V	300	SOT-23-3	ROHS3 Compliant
BC847BLT3G	onsemi	Active	100	45	100	200 @ 2mA, 5V	300	SOT-23-3	ROHS3 Compliant
BC847CLT1G	onsemi	Active	100	45	100	420 @ 2mA, 5V	300	SOT-23-3	ROHS3 Compliant
BC817-16LT1G	onsemi	Active	500	45	100	100 @ 100mA, 1V	300	SOT-23-3	ROHS3 Compliant
BC817-16LT3G	onsemi	Active	500	45	100	100 @ 100mA, 1V	300	SOT-23-3	ROHS3 Compliant
BC817-25LT1G	onsemi	Active	500	45	100	160 @ 100mA, 1V	300	SOT-23-3	ROHS3 Compliant
BC817-25LT3G	onsemi	Active	500	45	100	160 @ 100mA, 1V	300	SOT-23-3	ROHS3 Compliant
BC817-40LT1G	onsemi	Active	500	45	100	250 @ 100mA, 1V	300	SOT-23-3	ROHS3 Compliant
BC817-40LT3G	onsemi	Active	500	45	100	250 @ 100mA, 1V	300	SOT-23-3	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement (100 mA Applications):

BC847ALT1G is the primary direct substitute for BC850AMTF. Both devices share identical collector current (100 mA), collector-emitter breakdown voltage (45 V), and DC current gain specifications (110 @ 2 mA, 5 V). BC847ALT1G is active status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The transition frequency reduction from 300 MHz to 100 MHz does not impact functionality in standard switching and amplification circuits operating below 100 MHz.

BC847BLT1G and BC847BLT3G provide higher DC current gain (200 @ 2 mA, 5 V) while maintaining all other critical parameters. These variants are suitable for applications requiring improved gain characteristics without design modification.

BC847CLT1G offers the highest DC current gain (420 @ 2 mA, 5 V) within the 100 mA collector current class. This variant is applicable to designs where maximum gain is beneficial.

For Higher Current Applications (500 mA Requirements):

BC817 series transistors (BC817-16LT1G, BC817-16LT3G, BC817-25LT1G, BC817-25LT3G, BC817-40LT1G, BC817-40LT3G) provide 500 mA collector current capability while maintaining 45 V breakdown voltage and SOT-23-3 packaging. These devices are suitable for applications requiring higher current handling than the original BC850AMTF specification.

All substitute parts are manufactured by onsemi, carry active product status, and comply with ROHS3 regulations. Packaging variants (Cut Tape & Digi-Reel versus Tape & Reel) do not affect electrical performance and reflect only procurement and handling differences.

Frequently Asked Questions (FAQ)

Q: Can BC847ALT1G directly replace BC850AMTF in existing designs?

A: Yes. BC847ALT1G maintains identical electrical specifications for collector current (100 mA), collector-emitter breakdown voltage (45 V), and DC current gain (110 @ 2 mA, 5 V). The transition frequency is reduced from 300 MHz to 100 MHz, which does not impact circuits operating below 100 MHz. The SOT-23-3 package and surface mount configuration are identical, enabling direct PCB substitution without layout modification.

Q: What is the difference between BC847ALT1G, BC847BLT1G, and BC847CLT1G?

A: All three devices share identical collector current (100 mA), breakdown voltage (45 V), and package specifications. The primary difference is DC current gain: BC847ALT1G specifies 110 @ 2 mA, 5 V; BC847BLT1G specifies 200 @ 2 mA, 5 V; BC847CLT1G specifies 420 @ 2 mA, 5 V. Higher gain variants reduce base current requirements for a given collector current, beneficial in current-limited base drive circuits.

Q: When should BC817 series transistors be selected instead of BC847 variants?

A: BC817 series transistors are selected when collector current exceeds 100 mA. These devices support up to 500 mA collector current while maintaining the same 45 V breakdown voltage and SOT-23-3 package. Applications requiring higher current switching or amplification use BC817 variants. For designs limited to 100 mA or less, BC847 variants are preferred due to lower power dissipation and tighter gain specifications at lower currents.

Q: Are packaging variants (CT & Digi-Reel versus Tape & Reel) electrically equivalent?

A: Yes. Packaging designations (LT1G for Cut Tape & Digi-Reel, LT3G for Tape & Reel) reflect only procurement format and tape configuration. Electrical specifications, performance characteristics, and device functionality are identical between packaging variants of the same part number base.

Q: What is the significance of the DC current gain (hFE) suffix in BC817 part numbers?

A: BC817 part numbers include gain classification suffixes: -16 (100 @ 100 mA, 1 V), -25 (160 @ 100 mA, 1 V), and -40 (250 @ 100 mA, 1 V). These suffixes indicate minimum DC current gain at specified test conditions. Selection depends on circuit requirements for base drive current and gain margin. Higher gain variants (-25, -40) reduce base current requirements.

Q: Is the BC850AMTF still available for procurement?

A: BC850AMTF is classified as obsolete. Active equivalent and substitute parts from the BC847 and BC817 series are recommended for new designs and ongoing procurement. These active parts ensure supply continuity, regulatory compliance, and long-term availability.

Q: Do all substitute parts comply with ROHS3 regulations?

A: Yes. All active substitute parts listed (BC847ALT1G, BC847BLT1G, BC847BLT3G, BC847CLT1G, BC817-16LT1G, BC817-16LT3G, BC817-25LT1G, BC817-25LT3G, BC817-40LT1G, BC817-40LT3G) carry ROHS3 compliance certification. The original BC850AMTF does not specify ROHS status due to its obsolete classification.

Q: Can BC817 transistors be used in circuits designed for BC850AMTF if collector current is limited to 100 mA?

A: Yes. BC817 transistors operate correctly at 100 mA collector current. The higher current rating (500 mA maximum) does not prevent operation at lower currents. However, BC847 variants are preferred for 100 mA applications due to optimized gain specifications at lower currents and lower power dissipation characteristics.

Q: What is the operating temperature range for substitute parts?

A: BC847 variants specify -55°C to 150°C junction temperature range. BC817 variants specify -65°C to 150°C junction temperature range. Both ranges exceed the BC850AMTF maximum operating temperature of 150°C, ensuring thermal compatibility in all applications.

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