BC849CLT1 Equivalent & Substitute Parts

Part Overview

The BC849CLT1 is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. It features a 30 V collector-emitter breakdown voltage, 100 mA maximum collector current, and 300 mW power dissipation in a surface-mount SOT-23-3 package. The BC849CLT1 is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement continuity. Active alternatives with identical or superior electrical characteristics are available from multiple manufacturers.

Substiute Parts

BC849CLT1
onsemiIn Stock: 3230BC849CLT1 Datasheet
BC849CLT1
Current Part
BC849CLT1G
onsemiIn Stock: 33116BC849CLT1G Datasheet
BC849CLT1G
Direct
BSR17A
onsemiIn Stock: 119216BSR17A Datasheet
BSR17A
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BC848CLT1G
onsemiIn Stock: 6287BC848CLT1G Datasheet
BC848CLT1G
Parametric Equivalent
BC848C-7-F
Diodes IncorporatedIn Stock: 39374BC848C-7-F Datasheet
BC848C-7-F
Direct
BC849C,215
Nexperia USA Inc.In Stock: 75800BC849C,215 Datasheet
BC849C,215
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BC849C,235
Nexperia USA Inc.In Stock: 10873BC849C,235 Datasheet
BC849C,235
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2SD2657KT146
Rohm SemiconductorIn Stock: 162772SD2657KT146 Datasheet
2SD2657KT146
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BC848A RFG
Taiwan Semiconductor CorporationIn Stock: 9928BC848A RFG Datasheet
BC848A RFG
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BC848A-7-F
Diodes IncorporatedIn Stock: 44422BC848A-7-F Datasheet
BC848A-7-F
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BC848A-TP
Micro Commercial CoIn Stock: 7157BC848A-TP Datasheet
BC848A-TP
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BC848B RFG
Taiwan Semiconductor CorporationIn Stock: 9722BC848B RFG Datasheet
BC848B RFG
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BC848B-7-F
Diodes IncorporatedIn Stock: 9493BC848B-7-F Datasheet
BC848B-7-F
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BC848B-TP
Micro Commercial CoIn Stock: 19781BC848B-TP Datasheet
BC848B-TP
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BC848BE6433HTMA1
Infineon TechnologiesIn Stock: 1247BC848BE6433HTMA1 Datasheet
BC848BE6433HTMA1
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BC848C RFG
Taiwan Semiconductor CorporationIn Stock: 9830BC848C RFG Datasheet
BC848C RFG
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BC848C-TP
Micro Commercial CoIn Stock: 1097BC848C-TP Datasheet
BC848C-TP
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BC848CE6433HTMA1
Infineon TechnologiesIn Stock: 1047BC848CE6433HTMA1 Datasheet
BC848CE6433HTMA1
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BC849B,215
Nexperia USA Inc.In Stock: 8035BC849B,215 Datasheet
BC849B,215
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BC849B,235
Nexperia USA Inc.In Stock: 11023BC849B,235 Datasheet
BC849B,235
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BCW31,215
NXP USA Inc.In Stock: 42746BCW31,215 Datasheet
BCW31,215
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BCW31T116
Rohm SemiconductorIn Stock: 2685BCW31T116 Datasheet
BCW31T116
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BCW33,215
Nexperia USA Inc.In Stock: 2368BCW33,215 Datasheet
BCW33,215
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BCW60C,215
Nexperia USA Inc.In Stock: 4455BCW60C,215 Datasheet
BCW60C,215
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CMPT3904E TR PBFREE
Central Semiconductor CorpIn Stock: 140306CMPT3904E TR PBFREE Datasheet
CMPT3904E TR PBFREE
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CMPT3904G TR PBFREE
Central Semiconductor CorpIn Stock: 2448CMPT3904G TR PBFREE Datasheet
CMPT3904G TR PBFREE
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FMMT449-TP
Micro Commercial CoIn Stock: 778FMMT449-TP Datasheet
FMMT449-TP
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FMMT449TA
Diodes IncorporatedIn Stock: 17650FMMT449TA Datasheet
FMMT449TA
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FMMT489TA
Diodes IncorporatedIn Stock: 47048FMMT489TA Datasheet
FMMT489TA
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MMBT3904,215
Nexperia USA Inc.In Stock: 4135MMBT3904,215 Datasheet
MMBT3904,215
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MMBT3904-G
Comchip TechnologyIn Stock: 94799MMBT3904-G Datasheet
MMBT3904-G
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PBSS4230T,215
Nexperia USA Inc.In Stock: 6141PBSS4230T,215 Datasheet
PBSS4230T,215
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Key Parameters

Parameter BC849CLT1 Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 30 V
Current - Collector (Ic) (Max) 100 mA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Power - Max 300 mW
Frequency - Transition 100 MHz
Operating Temperature -55 to 150 °C
Mounting Type Surface Mount
Package / Case SOT-23-3
RoHS Status Non-compliant
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the BC849CLT1 is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30 V minimum
  • Current - Collector (Ic) (Max): 100 mA minimum
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA maximum
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V minimum
  • Power - Max: 300 mW minimum
  • Frequency - Transition: 100 MHz minimum
  • Operating Temperature: -55°C to 150°C minimum
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3 compatible

Direct Equivalents maintain all electrical parameters and package specifications identical to the BC849CLT1.

Parametric Equivalents maintain all critical electrical parameters but may originate from different manufacturers or have minor packaging variations (tape & reel vs. cut tape).

Similar Alternatives exceed one or more electrical parameters (higher voltage rating, current capacity, or frequency) while maintaining compatibility with the primary application envelope. These parts are suitable for drop-in replacement where the application does not require the exact original specifications.

Parameter Comparison

Part Number Manufacturer Ic (Max) Vce Breakdown hFE (Min) Power (Max) Frequency Temp Range Package Status RoHS
BC849CLT1 onsemi 100 mA 30 V 420 @ 2mA, 5V 300 mW 100 MHz -55 to 150°C SOT-23-3 Obsolete Non-compliant
BC849CLT1G onsemi 100 mA 30 V 420 @ 2mA, 5V 300 mW 100 MHz -55 to 150°C SOT-23-3 Active ROHS3 Compliant
BC848CLT1G onsemi 100 mA 30 V 420 @ 2mA, 5V 300 mW 100 MHz -55 to 150°C SOT-23-3 Active ROHS3 Compliant
BC848C-7-F Diodes Incorporated 100 mA 30 V 420 @ 2mA, 5V 300 mW 300 MHz -65 to 150°C SOT-23-3 Active ROHS3 Compliant
BC849C,215 Nexperia USA Inc. 100 mA 30 V 420 @ 2mA, 5V 250 mW 100 MHz -55 to 150°C SOT-23-3 Active ROHS3 Compliant
BC849C,235 Nexperia USA Inc. 100 mA 30 V 420 @ 2mA, 5V 250 mW 100 MHz -55 to 150°C SOT-23-3 Active ROHS3 Compliant
BSR17A onsemi 200 mA 40 V 100 @ 10mA, 1V 350 mW 300 MHz -55 to 150°C SOT-23-3 Active ROHS3 Compliant
2SD2657KT146 Rohm Semiconductor 1.5 A 30 V 270 @ 100mA, 2V 200 mW 330 MHz -55 to 150°C SMT3 Active ROHS3 Compliant
BC848A RFG Taiwan Semiconductor Corporation 100 mA 30 V 110 @ 2mA, 5V 200 mW 100 MHz -55 to 150°C SOT-23 Active ROHS3 Compliant
BC848A-7-F Diodes Incorporated 100 mA 30 V 110 @ 2mA, 5V 300 mW 300 MHz -65 to 150°C SOT-23-3 Active ROHS3 Compliant
BC848A-TP Micro Commercial Co 100 mA 30 V 110 @ 2mA, 5V 225 mW 100 MHz -55 to 150°C SOT-23 Active ROHS3 Compliant

Engineering Selection Recommendations

Direct Replacement (Recommended for Obsolescence Mitigation):

BC849CLT1G (onsemi) is the direct active equivalent of the BC849CLT1. It maintains identical electrical specifications and package configuration while offering ROHS3 compliance and active product status. This part is the primary recommendation for immediate substitution in new designs and production continuity.

BC848CLT1G (onsemi) is a parametric equivalent offering identical electrical performance with active status and ROHS3 compliance. The BC848 series shares the same electrical envelope as the BC849 series and is suitable for direct substitution.

Compliant Alternatives with Enhanced Performance:

BC848C-7-F (Diodes Incorporated) provides identical core electrical parameters with extended operating temperature range (-65°C to 150°C) and higher transition frequency (300 MHz). ROHS3 compliance and active status support long-term supply chain stability.

BC849C,215 and BC849C,235 (Nexperia USA Inc.) are automotive-grade alternatives with AEC-Q101 qualification. Both maintain electrical equivalence with reduced power dissipation (250 mW) and active product status with ROHS3 compliance.

Higher-Performance Alternatives:

BSR17A (onsemi) exceeds the BC849CLT1 specifications with 200 mA collector current, 40 V breakdown voltage, and 300 MHz transition frequency. This part is suitable for applications requiring enhanced current handling or higher frequency operation while maintaining SOT-23-3 package compatibility.

2SD2657KT146 (Rohm Semiconductor) offers significantly higher collector current (1.5 A) and transition frequency (330 MHz) with 30 V breakdown voltage. The SMT3 package differs from SOT-23-3 and requires PCB layout verification.

Lower Gain Alternatives:

BC848A RFG, BC848A-7-F, and BC848A-TP represent the BC848A variant with reduced DC current gain (110 @ 2mA, 5V versus 420 @ 2mA, 5V). These parts are suitable only for applications where lower gain is acceptable or beneficial for circuit stability.

All recommended substitutes maintain surface-mount technology, NPN transistor type, and compatibility with standard PCB assembly processes. Selection should prioritize ROHS3-compliant, active-status parts to ensure long-term availability and regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can BC849CLT1G be used as a direct replacement for BC849CLT1?

A: Yes. BC849CLT1G is the active equivalent of the obsolete BC849CLT1, maintaining identical electrical specifications (30 V breakdown, 100 mA collector current, 420 hFE minimum, 300 mW power, 100 MHz transition frequency) and SOT-23-3 package configuration. The primary difference is product status (active vs. obsolete) and RoHS compliance (ROHS3 vs. non-compliant).

Q: What is the difference between BC849CLT1 and BC848CLT1G?

A: Both parts share identical electrical parameters and package specifications. The BC849 and BC848 designations represent different product lines within onsemi's transistor portfolio, but the CLT1G variant of BC848 provides equivalent performance. BC848CLT1G is active and ROHS3 compliant, making it suitable for direct substitution.

Q: Can I use BC848A variants as replacements?

A: BC848A variants (BC848A RFG, BC848A-7-F, BC848A-TP) have reduced DC current gain (110 @ 2mA, 5V) compared to the BC849CLT1 (420 @ 2mA, 5V). These parts are not recommended as direct replacements unless the application circuit is designed to accommodate lower gain. Verify circuit performance before implementation.

Q: Is BSR17A compatible with BC849CLT1 applications?

A: BSR17A exceeds BC849CLT1 specifications in collector current (200 mA vs. 100 mA), breakdown voltage (40 V vs. 30 V), and transition frequency (300 MHz vs. 100 MHz). It is compatible with applications designed for BC849CLT1 and provides enhanced performance margin. The SOT-23-3 package is identical, enabling direct PCB substitution.

Q: What does RoHS compliance mean for transistor selection?

A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances regulations, restricting lead, cadmium, mercury, and other hazardous materials. For new designs and production, ROHS3-compliant parts (BC849CLT1G, BC848CLT1G, BC848C-7-F, BC849C,215, BC849C,235) are required for regulatory compliance and market acceptance.

Q: Are there packaging differences between substitute parts?

A: Most substitutes use SOT-23-3 packaging, identical to BC849CLT1. BC848A RFG and BC848A-TP use SOT-23 packaging, which is mechanically compatible but may have minor lead-frame differences. 2SD2657KT146 uses SMT3 packaging and requires PCB layout verification. Confirm package compatibility with PCB footprint before selection.

Q: What is the significance of automotive-grade qualification (AEC-Q101)?

A: BC849C,215 and BC849C,235 carry AEC-Q101 automotive qualification, indicating compliance with automotive reliability and quality standards. These parts are suitable for automotive applications and general-purpose use. Non-automotive-grade parts are acceptable for consumer and industrial applications.

Q: Can I mix different manufacturers' parts in the same design?

A: Yes. All recommended substitutes maintain identical or superior electrical specifications and package compatibility. Mixing manufacturers (onsemi, Diodes Incorporated, Nexperia, Taiwan Semiconductor Corporation, Rohm Semiconductor) is acceptable provided each part meets the application's electrical requirements. Verify parametric equivalence before implementation.

Q: What is the operating temperature range consideration?

A: BC849CLT1 operates from -55°C to 150°C. Most substitutes maintain this range. BC848C-7-F and BC848A-7-F extend the lower limit to -65°C, providing enhanced cold-temperature performance. BC849C,215 and BC849C,235 specify maximum temperature only (150°C). Confirm temperature range compatibility with application requirements.

Q: How do I verify parametric equivalence for a specific application?

A: Compare the following parameters between BC849CLT1 and the candidate substitute: collector-emitter breakdown voltage, maximum collector current, Vce saturation voltage, DC current gain (hFE), power dissipation, transition frequency, and operating temperature range. All critical parameters must meet or exceed the original specification for the application.

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