Equivalent & Substitute Parts for BC848CE6327HTSA1

Part Overview

The BC848CE6327HTSA1 is an NPN bipolar junction transistor manufactured by Infineon Technologies, designed for general-purpose switching and amplification applications. This device operates at a maximum collector current of 100 mA with a collector-emitter breakdown voltage of 30 V, transition frequency of 250 MHz, and maximum power dissipation of 330 mW in a surface-mount SOT-23-3 package.

The BC848CE6327HTSA1 is classified as Last Time Buy, indicating that Infineon has discontinued this specific part number variant. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support long-term production requirements.

Substiute Parts

BC848CE6327HTSA1
Infineon TechnologiesIn Stock: 946BC848CE6327HTSA1 Datasheet
BC848CE6327HTSA1
Current Part
BC848CE6433HTMA1
Infineon TechnologiesIn Stock: 1047BC848CE6433HTMA1 Datasheet
BC848CE6433HTMA1
Parametric Equivalent
BC848C-7-F
Diodes IncorporatedIn Stock: 39374BC848C-7-F Datasheet
BC848C-7-F
Direct
BC848C-TP
Micro Commercial CoIn Stock: 1097BC848C-TP Datasheet
BC848C-TP
Direct
BC848CLT1G
onsemiIn Stock: 6287BC848CLT1G Datasheet
BC848CLT1G
Direct
BC849C,215
Nexperia USA Inc.In Stock: 75800BC849C,215 Datasheet
BC849C,215
Direct
BC849C-TP
Micro Commercial CoIn Stock: 3855BC849C-TP Datasheet
BC849C-TP
Direct
BC849CLT1G
onsemiIn Stock: 33116BC849CLT1G Datasheet
BC849CLT1G
Direct
NSVBC848CLT1G
onsemiIn Stock: 3017NSVBC848CLT1G Datasheet
NSVBC848CLT1G
Direct
2SD2657KT146
Rohm SemiconductorIn Stock: 162772SD2657KT146 Datasheet
2SD2657KT146
MFR Recommended
BC817-40-7-F
Diodes IncorporatedIn Stock: 20370BC817-40-7-F Datasheet
BC817-40-7-F
MFR Recommended
BC848A-7-F
Diodes IncorporatedIn Stock: 44422BC848A-7-F Datasheet
BC848A-7-F
MFR Recommended
BC848A-TP
Micro Commercial CoIn Stock: 7157BC848A-TP Datasheet
BC848A-TP
MFR Recommended
BC848ALT1G
onsemiIn Stock: 42466BC848ALT1G Datasheet
BC848ALT1G
MFR Recommended
BC848B,215
Nexperia USA Inc.In Stock: 2312BC848B,215 Datasheet
BC848B,215
MFR Recommended
BC848B,235
Nexperia USA Inc.In Stock: 9202BC848B,235 Datasheet
BC848B,235
MFR Recommended
BC848B-13-F
Diodes IncorporatedIn Stock: 9878BC848B-13-F Datasheet
BC848B-13-F
MFR Recommended
BC848B-7-F
Diodes IncorporatedIn Stock: 9493BC848B-7-F Datasheet
BC848B-7-F
MFR Recommended
BC848B-TP
Micro Commercial CoIn Stock: 19781BC848B-TP Datasheet
BC848B-TP
MFR Recommended
BC848BLT1G
onsemiIn Stock: 17318BC848BLT1G Datasheet
BC848BLT1G
MFR Recommended
BC848BLT3G
onsemiIn Stock: 9824BC848BLT3G Datasheet
BC848BLT3G
MFR Recommended
BC848C RFG
Taiwan Semiconductor CorporationIn Stock: 9830BC848C RFG Datasheet
BC848C RFG
MFR Recommended
BC848CLT3G
onsemiIn Stock: 20967BC848CLT3G Datasheet
BC848CLT3G
MFR Recommended
BC848CQ-7-F
Diodes IncorporatedIn Stock: 101489BC848CQ-7-F Datasheet
BC848CQ-7-F
MFR Recommended
BC849B,215
Nexperia USA Inc.In Stock: 8035BC849B,215 Datasheet
BC849B,215
MFR Recommended
BC849B,235
Nexperia USA Inc.In Stock: 11023BC849B,235 Datasheet
BC849B,235
MFR Recommended
BC849B-TP
Micro Commercial CoIn Stock: 990BC849B-TP Datasheet
BC849B-TP
MFR Recommended
BC849BLT1G
onsemiIn Stock: 1185BC849BLT1G Datasheet
BC849BLT1G
MFR Recommended
BC849C,235
Nexperia USA Inc.In Stock: 10873BC849C,235 Datasheet
BC849C,235
MFR Recommended
BCW31,215
NXP USA Inc.In Stock: 42746BCW31,215 Datasheet
BCW31,215
MFR Recommended
BCW32,215
Nexperia USA Inc.In Stock: 3238BCW32,215 Datasheet
BCW32,215
MFR Recommended
BCW32,235
Nexperia USA Inc.In Stock: 10681BCW32,235 Datasheet
BCW32,235
MFR Recommended
BCW32LT1G
onsemiIn Stock: 21552BCW32LT1G Datasheet
BCW32LT1G
MFR Recommended
BCW33,215
Nexperia USA Inc.In Stock: 2368BCW33,215 Datasheet
BCW33,215
MFR Recommended
BCW33LT1G
onsemiIn Stock: 3419BCW33LT1G Datasheet
BCW33LT1G
MFR Recommended
BCW60B,215
Nexperia USA Inc.In Stock: 2315BCW60B,215 Datasheet
BCW60B,215
MFR Recommended
BCW60B,235
Nexperia USA Inc.In Stock: 898BCW60B,235 Datasheet
BCW60B,235
MFR Recommended
BCW60C,215
Nexperia USA Inc.In Stock: 4455BCW60C,215 Datasheet
BCW60C,215
MFR Recommended
BCW60C,235
Nexperia USA Inc.In Stock: 994BCW60C,235 Datasheet
BCW60C,235
MFR Recommended
BCW60D,215
NXP USA Inc.In Stock: 16550BCW60D,215 Datasheet
BCW60D,215
MFR Recommended
BCW60D,235
Nexperia USA Inc.In Stock: 750BCW60D,235 Datasheet
BCW60D,235
MFR Recommended
BCW65ALT1G
onsemiIn Stock: 1168BCW65ALT1G Datasheet
BCW65ALT1G
MFR Recommended
BCW65CLT1G
onsemiIn Stock: 12358BCW65CLT1G Datasheet
BCW65CLT1G
MFR Recommended
DSS30101L-7
Diodes IncorporatedIn Stock: 38642DSS30101L-7 Datasheet
DSS30101L-7
MFR Recommended
FMMT449-TP
Micro Commercial CoIn Stock: 778FMMT449-TP Datasheet
FMMT449-TP
MFR Recommended
FMMT449TA
Diodes IncorporatedIn Stock: 17650FMMT449TA Datasheet
FMMT449TA
MFR Recommended
FMMT489TA
Diodes IncorporatedIn Stock: 47048FMMT489TA Datasheet
FMMT489TA
MFR Recommended
MMBT2222LT1G
onsemiIn Stock: 21700MMBT2222LT1G Datasheet
MMBT2222LT1G
MFR Recommended
MMBT2484LT1G
onsemiIn Stock: 9298MMBT2484LT1G Datasheet
MMBT2484LT1G
MFR Recommended
MMBT2484LT3G
onsemiIn Stock: 30521MMBT2484LT3G Datasheet
MMBT2484LT3G
MFR Recommended
MMBT3416LT3G
onsemiIn Stock: 8310MMBT3416LT3G Datasheet
MMBT3416LT3G
MFR Recommended
MMBT3904LT1G
onsemiIn Stock: 605202MMBT3904LT1G Datasheet
MMBT3904LT1G
MFR Recommended
MMBT3904LT3G
onsemiIn Stock: 360379MMBT3904LT3G Datasheet
MMBT3904LT3G
MFR Recommended
MMBT489LT1G
onsemiIn Stock: 39122MMBT489LT1G Datasheet
MMBT489LT1G
MFR Recommended
MMBT6429LT1G
onsemiIn Stock: 155261MMBT6429LT1G Datasheet
MMBT6429LT1G
MFR Recommended
NSS30101LT1G
onsemiIn Stock: 295086NSS30101LT1G Datasheet
NSS30101LT1G
MFR Recommended
NSVBCW32LT1G
onsemiIn Stock: 1157NSVBCW32LT1G Datasheet
NSVBCW32LT1G
MFR Recommended
PBSS4130T,215
Nexperia USA Inc.In Stock: 2535PBSS4130T,215 Datasheet
PBSS4130T,215
MFR Recommended
PBSS4230T,215
Nexperia USA Inc.In Stock: 6141PBSS4230T,215 Datasheet
PBSS4230T,215
MFR Recommended
PMBS3904,215
Nexperia USA Inc.In Stock: 9899PMBS3904,215 Datasheet
PMBS3904,215
MFR Recommended
PMBS3904,235
Nexperia USA Inc.In Stock: 90266PMBS3904,235 Datasheet
PMBS3904,235
MFR Recommended
PMBT2222,215
Nexperia USA Inc.In Stock: 3967PMBT2222,215 Datasheet
PMBT2222,215
MFR Recommended
PMBT2222,235
NXP USA Inc.In Stock: 60985PMBT2222,235 Datasheet
PMBT2222,235
MFR Recommended
SBC848BLT1G
onsemiIn Stock: 54194SBC848BLT1G Datasheet
SBC848BLT1G
MFR Recommended
SBCW33LT1G
onsemiIn Stock: 7103SBCW33LT1G Datasheet
SBCW33LT1G
MFR Recommended
SMMBT3904LT1G
onsemiIn Stock: 287321SMMBT3904LT1G Datasheet
SMMBT3904LT1G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) Max 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 600 mV @ 5 mA, 100 mA
Current - Collector Cutoff (Max) 15 nA
DC Current Gain (hFE) Min @ Ic, Vce 420 @ 2 mA, 5 V
Power - Max 330 mW
Frequency - Transition 250 MHz
Operating Temperature (TJ) 150 °C
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the BC848CE6327HTSA1 are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalent (Same Base Product Number): Parts sharing the BC848 base product number with identical electrical specifications are considered parametric equivalents. These parts maintain the same maximum collector current (100 mA), collector-emitter breakdown voltage (30 V), DC current gain (420 @ 2 mA, 5 V), saturation voltage (600 mV @ 5 mA, 100 mA), and package form factor (SOT-23-3). The BC848CE6433HTMA1 from Infineon Technologies is a parametric equivalent differing only in manufacturing date code and tape reel configuration.

Direct Manufacturer Equivalents (Different Manufacturers, Matching Specifications): Parts from alternative manufacturers (Diodes Incorporated, Micro Commercial Co, onsemi, Nexperia USA Inc.) that maintain the critical electrical parameters—100 mA maximum collector current, 30 V breakdown voltage, 420 minimum DC current gain, and SOT-23-3 package—are classified as direct equivalents. These parts satisfy the same functional requirements within the allowed parameter tolerances.

Substitution Logic: Substitution is permitted when the following conditions are met:

  • Transistor type remains NPN
  • Maximum collector current ≥ 100 mA
  • Collector-emitter breakdown voltage ≥ 30 V
  • DC current gain (hFE) ≥ 420 @ 2 mA, 5 V
  • Package / Case is TO-236-3, SC-59, or SOT-23-3
  • RoHS3 compliance is maintained
  • MSL rating is 1 (Unlimited)

Parameter Comparison

Manufacturer Part Number Manufacturer Ic (Max) mA Vce Breakdown (Max) V Vce Sat (Max) mV hFE (Min) @ 2mA, 5V Power (Max) mW Frequency (Transition) MHz Package Product Status
BC848CE6327HTSA1 Infineon Technologies 100 30 600 420 330 250 SOT-23-3 Last Time Buy
BC848CE6433HTMA1 Infineon Technologies 100 30 600 420 330 250 SOT-23-3 Last Time Buy
BC848C-7-F Diodes Incorporated 100 30 600 420 300 300 SOT-23-3 Active
BC848C-TP Micro Commercial Co 100 30 500 420 225 100 SOT-23-3 Active
BC848CLT1G onsemi 100 30 600 420 300 100 SOT-23-3 Active
BC849C,215 Nexperia USA Inc. 100 30 600 420 250 100 SOT-23-3 Active
BC849C-TP Micro Commercial Co 100 30 500 420 225 100 SOT-23-3 Active
BC849CLT1G onsemi 100 30 600 420 300 100 SOT-23-3 Active
NSVBC848CLT1G onsemi 100 30 600 200 225 100 SOT-23-3 Active
2SD2657KT146 Rohm Semiconductor 1500 30 350 270 200 330 SOT-23-3 Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

BC848CLT1G (onsemi) and BC849CLT1G (onsemi) are the preferred substitutes. Both parts maintain Active product status, ensuring long-term availability and supply chain stability. These devices meet all critical electrical parameters: 100 mA maximum collector current, 30 V breakdown voltage, 420 minimum DC current gain, and 600 mV saturation voltage. The onsemi parts offer 300 mW power dissipation, exceeding the original 330 mW specification, and provide extended operating temperature range (-55°C to 150°C). Both are ROHS3 compliant with MSL 1 rating.

BC848C-7-F (Diodes Incorporated) is an alternative with Active status. This part provides superior transition frequency (300 MHz versus 250 MHz in the original), enhanced power capability (300 mW), and extended temperature range (-65°C to 150°C). The 600 mV saturation voltage matches the original specification exactly.

Secondary Substitutes (Application-Dependent):

BC849C,215 (Nexperia USA Inc.) carries AEC-Q101 automotive qualification and is suitable for automotive-grade applications requiring enhanced reliability documentation. This part maintains all critical electrical parameters and Active product status.

BC848C-TP and BC849C-TP (Micro Commercial Co) are Active alternatives with lower power dissipation (225 mW) and reduced transition frequency (100 MHz). These parts are suitable for applications where lower power consumption is beneficial and frequency requirements do not exceed 100 MHz. Note the reduced saturation voltage (500 mV) compared to the original specification.

Not Recommended:

NSVBC848CLT1G (onsemi) exhibits reduced DC current gain (200 @ 2 mA, 5 V) below the original 420 specification, limiting its suitability as a direct replacement in gain-sensitive applications.

2SD2657KT146 (Rohm Semiconductor) is a higher-current device (1.5 A maximum) with different electrical characteristics and is not suitable for direct substitution in circuits designed for 100 mA operation.

Frequently Asked Questions (FAQ)

Q: Can BC848CLT1G replace BC848CE6327HTSA1 in existing designs without circuit modification?

A: Yes. BC848CLT1G maintains identical maximum collector current (100 mA), collector-emitter breakdown voltage (30 V), DC current gain (420 @ 2 mA, 5 V), and saturation voltage (600 mV @ 5 mA, 100 mA). The SOT-23-3 package is mechanically and electrically compatible. The extended operating temperature range (-55°C to 150°C) and higher power rating (300 mW) provide additional design margin.

Q: What is the difference between BC848 and BC849 series transistors?

A: BC848 and BC849 are both NPN transistors with identical electrical specifications in this comparison: 100 mA maximum collector current, 30 V breakdown voltage, and 420 minimum DC current gain. The primary distinction is historical product line designation. Both are functionally interchangeable for the specified application parameters.

Q: Are there supply chain advantages to selecting onsemi parts over Infineon?

A: Yes. onsemi BC848CLT1G and BC849CLT1G carry Active product status, indicating ongoing production and long-term availability commitment. The original BC848CE6327HTSA1 is Last Time Buy, meaning Infineon has ceased production. Active status parts provide superior supply chain stability and reduced obsolescence risk.

Q: Does the transition frequency difference between 250 MHz (original) and 100 MHz (onsemi alternatives) affect circuit performance?

A: Transition frequency affects high-frequency switching performance. For applications operating below 100 MHz, onsemi parts (100 MHz transition frequency) are fully adequate. For circuits requiring the original 250 MHz capability, BC848C-7-F (Diodes Incorporated, 300 MHz) or BC848CE6433HTMA1 (Infineon, 250 MHz) are preferred.

Q: Is the reduced power dissipation in BC848C-TP (225 mW) a limitation?

A: The reduced power rating (225 mW versus 330 mW original) is not a limitation if circuit design ensures actual power dissipation remains below 225 mW. For designs operating near the 330 mW limit, onsemi or Diodes Incorporated alternatives with 300 mW ratings provide safer margin.

Q: Can NSVBC848CLT1G be used as a substitute?

A: NSVBC848CLT1G is not recommended as a direct substitute. The DC current gain specification (200 @ 2 mA, 5 V) falls below the original requirement (420 @ 2 mA, 5 V). This reduced gain may cause circuit performance degradation in gain-dependent applications. Use only if circuit design has been re-evaluated for lower gain operation.

Q: What packaging considerations apply when substituting these parts?

A: All recommended substitutes use SOT-23-3 (TO-236-3, SC-59) package, ensuring mechanical and footprint compatibility. Tape & Reel (TR) and Cut Tape (CT) packaging options are available across manufacturers. Verify tape reel specifications with your procurement department if automated assembly equipment has specific reel format requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the original BC848CE6327HTSA1 specifications. This ensures compatibility with RoHS3-regulated supply chains and eliminates compliance risk.

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