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Equivalent & Substitute Parts for BC848CE6327HTSA1
Part Overview
The BC848CE6327HTSA1 is an NPN bipolar junction transistor manufactured by Infineon Technologies, designed for general-purpose switching and amplification applications. This device operates at a maximum collector current of 100 mA with a collector-emitter breakdown voltage of 30 V, transition frequency of 250 MHz, and maximum power dissipation of 330 mW in a surface-mount SOT-23-3 package.
The BC848CE6327HTSA1 is classified as Last Time Buy, indicating that Infineon has discontinued this specific part number variant. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support long-term production requirements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Current - Collector (Ic) Max | 100 | mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 | V |
| Vce Saturation (Max) @ Ib, Ic | 600 mV @ 5 mA, 100 mA | — |
| Current - Collector Cutoff (Max) | 15 | nA |
| DC Current Gain (hFE) Min @ Ic, Vce | 420 @ 2 mA, 5 V | — |
| Power - Max | 330 | mW |
| Frequency - Transition | 250 | MHz |
| Operating Temperature (TJ) | 150 | °C |
| Mounting Type | Surface Mount | — |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitute parts for the BC848CE6327HTSA1 are classified into two categories based on electrical and mechanical compatibility:
Parametric Equivalent (Same Base Product Number): Parts sharing the BC848 base product number with identical electrical specifications are considered parametric equivalents. These parts maintain the same maximum collector current (100 mA), collector-emitter breakdown voltage (30 V), DC current gain (420 @ 2 mA, 5 V), saturation voltage (600 mV @ 5 mA, 100 mA), and package form factor (SOT-23-3). The BC848CE6433HTMA1 from Infineon Technologies is a parametric equivalent differing only in manufacturing date code and tape reel configuration.
Direct Manufacturer Equivalents (Different Manufacturers, Matching Specifications): Parts from alternative manufacturers (Diodes Incorporated, Micro Commercial Co, onsemi, Nexperia USA Inc.) that maintain the critical electrical parameters—100 mA maximum collector current, 30 V breakdown voltage, 420 minimum DC current gain, and SOT-23-3 package—are classified as direct equivalents. These parts satisfy the same functional requirements within the allowed parameter tolerances.
Substitution Logic: Substitution is permitted when the following conditions are met:
- Transistor type remains NPN
- Maximum collector current ≥ 100 mA
- Collector-emitter breakdown voltage ≥ 30 V
- DC current gain (hFE) ≥ 420 @ 2 mA, 5 V
- Package / Case is TO-236-3, SC-59, or SOT-23-3
- RoHS3 compliance is maintained
- MSL rating is 1 (Unlimited)
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Ic (Max) mA | Vce Breakdown (Max) V | Vce Sat (Max) mV | hFE (Min) @ 2mA, 5V | Power (Max) mW | Frequency (Transition) MHz | Package | Product Status |
|---|---|---|---|---|---|---|---|---|---|
| BC848CE6327HTSA1 | Infineon Technologies | 100 | 30 | 600 | 420 | 330 | 250 | SOT-23-3 | Last Time Buy |
| BC848CE6433HTMA1 | Infineon Technologies | 100 | 30 | 600 | 420 | 330 | 250 | SOT-23-3 | Last Time Buy |
| BC848C-7-F | Diodes Incorporated | 100 | 30 | 600 | 420 | 300 | 300 | SOT-23-3 | Active |
| BC848C-TP | Micro Commercial Co | 100 | 30 | 500 | 420 | 225 | 100 | SOT-23-3 | Active |
| BC848CLT1G | onsemi | 100 | 30 | 600 | 420 | 300 | 100 | SOT-23-3 | Active |
| BC849C,215 | Nexperia USA Inc. | 100 | 30 | 600 | 420 | 250 | 100 | SOT-23-3 | Active |
| BC849C-TP | Micro Commercial Co | 100 | 30 | 500 | 420 | 225 | 100 | SOT-23-3 | Active |
| BC849CLT1G | onsemi | 100 | 30 | 600 | 420 | 300 | 100 | SOT-23-3 | Active |
| NSVBC848CLT1G | onsemi | 100 | 30 | 600 | 200 | 225 | 100 | SOT-23-3 | Active |
| 2SD2657KT146 | Rohm Semiconductor | 1500 | 30 | 350 | 270 | 200 | 330 | SOT-23-3 | Active |
Engineering Selection Recommendations
Primary Substitutes (Recommended for Direct Replacement):
BC848CLT1G (onsemi) and BC849CLT1G (onsemi) are the preferred substitutes. Both parts maintain Active product status, ensuring long-term availability and supply chain stability. These devices meet all critical electrical parameters: 100 mA maximum collector current, 30 V breakdown voltage, 420 minimum DC current gain, and 600 mV saturation voltage. The onsemi parts offer 300 mW power dissipation, exceeding the original 330 mW specification, and provide extended operating temperature range (-55°C to 150°C). Both are ROHS3 compliant with MSL 1 rating.
BC848C-7-F (Diodes Incorporated) is an alternative with Active status. This part provides superior transition frequency (300 MHz versus 250 MHz in the original), enhanced power capability (300 mW), and extended temperature range (-65°C to 150°C). The 600 mV saturation voltage matches the original specification exactly.
Secondary Substitutes (Application-Dependent):
BC849C,215 (Nexperia USA Inc.) carries AEC-Q101 automotive qualification and is suitable for automotive-grade applications requiring enhanced reliability documentation. This part maintains all critical electrical parameters and Active product status.
BC848C-TP and BC849C-TP (Micro Commercial Co) are Active alternatives with lower power dissipation (225 mW) and reduced transition frequency (100 MHz). These parts are suitable for applications where lower power consumption is beneficial and frequency requirements do not exceed 100 MHz. Note the reduced saturation voltage (500 mV) compared to the original specification.
Not Recommended:
NSVBC848CLT1G (onsemi) exhibits reduced DC current gain (200 @ 2 mA, 5 V) below the original 420 specification, limiting its suitability as a direct replacement in gain-sensitive applications.
2SD2657KT146 (Rohm Semiconductor) is a higher-current device (1.5 A maximum) with different electrical characteristics and is not suitable for direct substitution in circuits designed for 100 mA operation.
Frequently Asked Questions (FAQ)
Q: Can BC848CLT1G replace BC848CE6327HTSA1 in existing designs without circuit modification?
A: Yes. BC848CLT1G maintains identical maximum collector current (100 mA), collector-emitter breakdown voltage (30 V), DC current gain (420 @ 2 mA, 5 V), and saturation voltage (600 mV @ 5 mA, 100 mA). The SOT-23-3 package is mechanically and electrically compatible. The extended operating temperature range (-55°C to 150°C) and higher power rating (300 mW) provide additional design margin.
Q: What is the difference between BC848 and BC849 series transistors?
A: BC848 and BC849 are both NPN transistors with identical electrical specifications in this comparison: 100 mA maximum collector current, 30 V breakdown voltage, and 420 minimum DC current gain. The primary distinction is historical product line designation. Both are functionally interchangeable for the specified application parameters.
Q: Are there supply chain advantages to selecting onsemi parts over Infineon?
A: Yes. onsemi BC848CLT1G and BC849CLT1G carry Active product status, indicating ongoing production and long-term availability commitment. The original BC848CE6327HTSA1 is Last Time Buy, meaning Infineon has ceased production. Active status parts provide superior supply chain stability and reduced obsolescence risk.
Q: Does the transition frequency difference between 250 MHz (original) and 100 MHz (onsemi alternatives) affect circuit performance?
A: Transition frequency affects high-frequency switching performance. For applications operating below 100 MHz, onsemi parts (100 MHz transition frequency) are fully adequate. For circuits requiring the original 250 MHz capability, BC848C-7-F (Diodes Incorporated, 300 MHz) or BC848CE6433HTMA1 (Infineon, 250 MHz) are preferred.
Q: Is the reduced power dissipation in BC848C-TP (225 mW) a limitation?
A: The reduced power rating (225 mW versus 330 mW original) is not a limitation if circuit design ensures actual power dissipation remains below 225 mW. For designs operating near the 330 mW limit, onsemi or Diodes Incorporated alternatives with 300 mW ratings provide safer margin.
Q: Can NSVBC848CLT1G be used as a substitute?
A: NSVBC848CLT1G is not recommended as a direct substitute. The DC current gain specification (200 @ 2 mA, 5 V) falls below the original requirement (420 @ 2 mA, 5 V). This reduced gain may cause circuit performance degradation in gain-dependent applications. Use only if circuit design has been re-evaluated for lower gain operation.
Q: What packaging considerations apply when substituting these parts?
A: All recommended substitutes use SOT-23-3 (TO-236-3, SC-59) package, ensuring mechanical and footprint compatibility. Tape & Reel (TR) and Cut Tape (CT) packaging options are available across manufacturers. Verify tape reel specifications with your procurement department if automated assembly equipment has specific reel format requirements.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All substitute parts listed maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the original BC848CE6327HTSA1 specifications. This ensures compatibility with RoHS3-regulated supply chains and eliminates compliance risk.
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