BC848C NPN Bipolar Junction Transistor Equivalent & Substitute Parts

Part Overview

The BC848C is an NPN bipolar junction transistor manufactured by Taiwan Semiconductor Corporation, designed for general-purpose switching and amplification applications. This surface mount device operates at 30V maximum collector-emitter breakdown voltage with a maximum collector current of 100mA and 200mW power dissipation. The BC848C maintains active product status with extensive inventory availability (94,200 pieces in stock). Substitute parts are identified to address supply chain requirements, packaging format preferences, and specific application performance parameters while maintaining functional compatibility within the TO-236-3 / SOT-23-3 package family.

Substiute Parts

BC848C
Taiwan Semiconductor CorporationIn Stock: 94240BC848C Datasheet
BC848C
Current Part
BC848C RFG
Taiwan Semiconductor CorporationIn Stock: 9830BC848C RFG Datasheet
BC848C RFG
Parametric Equivalent
BC848A-TP
Micro Commercial CoIn Stock: 7157BC848A-TP Datasheet
BC848A-TP
Similar
BC848B-7-F
Diodes IncorporatedIn Stock: 9493BC848B-7-F Datasheet
BC848B-7-F
Similar
BC848BLT3G
onsemiIn Stock: 9824BC848BLT3G Datasheet
BC848BLT3G
Similar
BC849B,215
Nexperia USA Inc.In Stock: 8035BC849B,215 Datasheet
BC849B,215
Similar
BC849BLT1G
onsemiIn Stock: 1185BC849BLT1G Datasheet
BC849BLT1G
Similar
BCW32,235
Nexperia USA Inc.In Stock: 10681BCW32,235 Datasheet
BCW32,235
Similar
NSVBC848CLT1G
onsemiIn Stock: 3017NSVBC848CLT1G Datasheet
NSVBC848CLT1G
Similar
BC848C
Taiwan Semiconductor CorporationIn Stock: 94240BC848C Datasheet
BC848C
Parametric Equivalent
BC848C
Taiwan Semiconductor CorporationIn Stock: 94240BC848C Datasheet
BC848C
Parametric Equivalent

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 30 V
Current - Collector (Ic) (Max) 100 mA
Power - Max 200 mW
Frequency - Transition 100 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100 nA
Operating Temperature Range -55 to 150 °C
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the BC848C are classified into two categories based on parametric equivalence and functional compatibility:

Parametric Equivalents maintain identical or superior electrical specifications across all critical parameters: collector-emitter breakdown voltage (30V), maximum collector current (100mA), transition frequency (100MHz), and DC current gain characteristics. These parts are direct functional replacements with no circuit redesign required.

Similar Equivalents share the same base product family (BC848/BC849 series) and package form factor (TO-236-3 / SOT-23-3) but exhibit variations in one or more secondary parameters such as power dissipation rating, saturation voltage, or collector cutoff current. These parts remain compatible for most applications but require verification of specific performance margins in power-sensitive or high-frequency circuits.

Substitution eligibility is determined by the following key parameters:

  • Transistor Type: NPN (mandatory match)
  • Voltage - Collector Emitter Breakdown: ≥30V
  • Current - Collector (Max): ≥100mA
  • Package / Case: TO-236-3, SC-59, or SOT-23-3 (mechanical compatibility)
  • Mounting Type: Surface Mount (process compatibility)
  • Operating Temperature Range: Must encompass application requirements
  • RoHS Status: ROHS3 Compliant (regulatory requirement)

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(br) V Power mW fT MHz hFE (Min) @ 2mA, 5V Vce Sat (Max) mV Icbo (Max) nA Temp Range °C Package
BC848C Taiwan Semiconductor 100 30 200 100 420 500 100 -55 to 150 SOT-23
BC848C RFG Taiwan Semiconductor 100 30 200 100 420 500 100 -55 to 150 SOT-23
BC848A-TP Micro Commercial Co 100 30 225 100 110 500 100 -55 to 150 SOT-23
BC848B-7-F Diodes Incorporated 100 30 300 300 200 600 15 -65 to 150 SOT-23-3
BC848BLT3G onsemi 100 30 300 100 200 600 15 -55 to 150 SOT-23-3
BC849B,215 Nexperia USA Inc. 100 30 250 100 200 600 15 -55 to 150 TO-236AB
BC849BLT1G onsemi 100 30 300 100 200 600 15 -55 to 150 SOT-23-3
BCW32,235 Nexperia USA Inc. 100 32 250 100 200 210 100 -55 to 150 TO-236AB
NSVBC848CLT1G onsemi 100 30 225 100 200 600 15 -55 to 150 SOT-23-3

Engineering Selection Recommendations

Direct Parametric Equivalents:

BC848C RFG (Taiwan Semiconductor Corporation) is a parametric equivalent of BC848C with identical electrical specifications. The RFG designation indicates Tape & Reel packaging format. This part is suitable for high-volume production environments requiring reel-based component handling. Inventory availability is 9,760 pieces.

Functional Equivalents with Enhanced Performance:

BC848BLT3G (onsemi) and BC849BLT1G (onsemi) provide enhanced power dissipation (300mW versus 200mW) and reduced collector cutoff current (15nA versus 100nA), resulting in improved thermal performance and lower leakage characteristics. Both parts maintain 100MHz transition frequency and 30V breakdown voltage. These parts are suitable for applications requiring superior thermal margins or low-leakage performance.

BC849B,215 (Nexperia USA Inc.) offers automotive-grade qualification (AEC-Q101) with 250mW power rating and reduced saturation voltage characteristics. This part is specified for automotive applications requiring functional safety compliance.

Voltage-Enhanced Alternative:

BCW32,235 (Nexperia USA Inc.) provides 32V collector-emitter breakdown voltage with automotive-grade qualification. This part is suitable for applications requiring higher voltage margin or automotive environmental compliance. Saturation voltage is significantly reduced (210mV at 2.5mA, 50mA), indicating superior switching performance in saturation mode.

Lower Current Gain Alternative:

BC848A-TP (Micro Commercial Co) exhibits reduced DC current gain (110 @ 2mA, 5V) compared to BC848C (420 @ 2mA, 5V). This part is suitable for applications where lower current gain is acceptable or preferred to reduce base drive requirements.

All substitute parts maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory compatibility with the original BC848C specification.

Frequently Asked Questions (FAQ)

Q: Can BC848C RFG be used as a direct replacement for BC848C?

A: Yes. BC848C RFG is a parametric equivalent with identical electrical specifications. The primary difference is packaging format: BC848C RFG is supplied in Tape & Reel format for automated assembly, while BC848C is supplied in standard packaging. Both parts are functionally interchangeable in circuit applications.

Q: What is the difference between BC848B-7-F and BC848C?

A: BC848B-7-F (Diodes Incorporated) differs from BC848C in three parameters: transition frequency (300MHz versus 100MHz), power dissipation (300mW versus 200mW), and saturation voltage (600mV versus 500mV). BC848B-7-F is suitable for higher-frequency applications and provides enhanced thermal performance. The higher saturation voltage may affect switching speed in saturation-mode circuits.

Q: Is BCW32,235 compatible with BC848C circuits?

A: BCW32,235 is functionally compatible with BC848C for most applications. The primary difference is collector-emitter breakdown voltage (32V versus 30V), providing additional voltage margin. BCW32,235 exhibits significantly lower saturation voltage (210mV at 2.5mA, 50mA versus 500mV at 5mA, 100mA), resulting in improved switching efficiency. Circuit verification is required for applications with tight saturation voltage specifications.

Q: What does the RFG suffix in BC848C RFG indicate?

A: The RFG suffix indicates Tape & Reel packaging format supplied by Taiwan Semiconductor Corporation. This packaging format is optimized for high-speed automated assembly processes. Electrical specifications are identical to standard BC848C packaging.

Q: Can BC849B,215 be used in non-automotive applications?

A: Yes. BC849B,215 is qualified to automotive standards (AEC-Q101) but is functionally suitable for general-purpose applications. The automotive qualification indicates enhanced reliability testing and process control. This part is compatible with non-automotive circuits requiring equivalent or superior performance specifications.

Q: What is the significance of the collector cutoff current (Icbo) difference between BC848C and BC848BLT3G?

A: BC848C specifies maximum Icbo of 100nA, while BC848BLT3G specifies 15nA. Lower collector cutoff current indicates reduced leakage current in the off-state, resulting in lower standby power consumption and improved performance in low-power or precision analog circuits. BC848BLT3G is preferred for applications sensitive to leakage current.

Q: Are all substitute parts available in SOT-23-3 package?

A: No. BC848C and BC848C RFG are supplied in SOT-23 package. BC848B-7-F, BC848BLT3G, BC849BLT1G, and NSVBC848CLT1G are supplied in SOT-23-3 package. BC849B,215 and BCW32,235 are supplied in TO-236AB package. All packages are mechanically compatible within the TO-236-3 / SC-59 family and are suitable for standard SOT-23 PCB footprints.

Q: What is the operating temperature range difference between BC848C and BC848B-7-F?

A: BC848C operates from -55°C to 150°C, while BC848B-7-F operates from -65°C to 150°C. BC848B-7-F provides extended low-temperature operation, suitable for applications requiring operation in extreme cold environments. Both parts maintain identical maximum operating temperature (150°C).

Q: Is NSVBC848CLT1G a direct replacement for BC848C?

A: NSVBC848CLT1G (onsemi) is functionally compatible with BC848C but exhibits differences in saturation voltage (600mV versus 500mV) and collector cutoff current (15nA versus 100nA). The base product number (NSVBC848 versus BC848) indicates a different product line. This part is suitable for applications where lower leakage current is beneficial, but circuit verification is required for saturation-sensitive applications.

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