BC848AW-7-F Equivalent & Substitute Parts

Part Overview

The BC848AW-7-F is an NPN bipolar junction transistor manufactured by Diodes Incorporated, designed for general-purpose small-signal switching and amplification applications. This device operates at a maximum collector current of 100 mA with a collector-emitter breakdown voltage of 30 V, housed in a surface-mount SOT-323 package. The part is currently in active production status with 92,190 units in stock.

Substitute parts become necessary when the primary part reaches end-of-life status, experiences supply constraints, or when design requirements necessitate alternative electrical or thermal characteristics. The BC848AW-7-F maintains compatibility with multiple equivalent devices across different manufacturers, provided that critical electrical parameters remain within specified tolerances.

Substiute Parts

BC848AW-7-F
Diodes IncorporatedIn Stock: 92213BC848AW-7-F Datasheet
BC848AW-7-F
Current Part
BC848W,115
Nexperia USA Inc.In Stock: 15128BC848W,115 Datasheet
BC848W,115
Direct
BC848AW RFG
Taiwan Semiconductor CorporationIn Stock: 18915BC848AW RFG Datasheet
BC848AW RFG
MFR Recommended
BC848BE6327HTSA1
Infineon TechnologiesIn Stock: 936BC848BE6327HTSA1 Datasheet
BC848BE6327HTSA1
MFR Recommended
BC848BE6433HTMA1
Infineon TechnologiesIn Stock: 1247BC848BE6433HTMA1 Datasheet
BC848BE6433HTMA1
MFR Recommended
BC848BLT1G
onsemiIn Stock: 17318BC848BLT1G Datasheet
BC848BLT1G
MFR Recommended
BC848BW RFG
Taiwan Semiconductor CorporationIn Stock: 19051BC848BW RFG Datasheet
BC848BW RFG
MFR Recommended
BC848BWT1G
onsemiIn Stock: 24056BC848BWT1G Datasheet
BC848BWT1G
MFR Recommended
BC848CE6433HTMA1
Infineon TechnologiesIn Stock: 1047BC848CE6433HTMA1 Datasheet
BC848CE6433HTMA1
MFR Recommended
BC848CW RFG
Taiwan Semiconductor CorporationIn Stock: 18825BC848CW RFG Datasheet
BC848CW RFG
MFR Recommended
BC848CWT1G
Fairchild SemiconductorIn Stock: 15427BC848CWT1G Datasheet
BC848CWT1G
MFR Recommended
BC849AW RFG
Taiwan Semiconductor CorporationIn Stock: 18950BC849AW RFG Datasheet
BC849AW RFG
MFR Recommended
BC849BW RFG
Taiwan Semiconductor CorporationIn Stock: 18878BC849BW RFG Datasheet
BC849BW RFG
MFR Recommended
BC849BW,115
NXP USA Inc.In Stock: 672293BC849BW,115 Datasheet
BC849BW,115
MFR Recommended
BC849CW RFG
Taiwan Semiconductor CorporationIn Stock: 18977BC849CW RFG Datasheet
BC849CW RFG
MFR Recommended
BC849CW,115
NXP USA Inc.In Stock: 16480BC849CW,115 Datasheet
BC849CW,115
MFR Recommended
NSVBC848BWT1G
onsemiIn Stock: 9923NSVBC848BWT1G Datasheet
NSVBC848BWT1G
MFR Recommended
PMST2222,115
NXP SemiconductorsIn Stock: 541090PMST2222,115 Datasheet
PMST2222,115
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) Max 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 600 mV @ 5 mA, 100 mA
Current - Collector Cutoff (Max) 20 nA
DC Current Gain (hFE) Min @ Ic, Vce 110 @ 2 mA, 5 V
Power - Max 200 mW
Frequency - Transition 300 MHz
Operating Temperature Range -65 to 150 °C
Package / Case SC-70, SOT-323
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the BC848AW-7-F is determined by strict adherence to the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor Type: NPN (mandatory match)
  • Current - Collector (Ic) Max: 100 mA (mandatory match)
  • Voltage - Collector Emitter Breakdown: 30 V (mandatory match)
  • Vce Saturation: 600 mV @ 5 mA, 100 mA (mandatory match)
  • DC Current Gain (hFE) Min: 110 or greater @ 2 mA, 5 V (minimum threshold)
  • Power Dissipation: 200 mW or greater (minimum threshold)
  • Package / Case: SC-70 or SOT-323 compatible (mandatory match for direct substitution)
  • Mounting Type: Surface Mount (mandatory match)
  • RoHS Status: ROHS3 Compliant (mandatory match)
  • Moisture Sensitivity Level: 1 (mandatory match)

Secondary Considerations:

  • Frequency - Transition: 300 MHz or greater preferred; lower values acceptable if application does not require high-frequency performance
  • Operating Temperature Range: -65°C to 150°C preferred; narrower ranges acceptable if application operates within specified limits
  • Current - Collector Cutoff (ICBO): Lower values preferred for reduced leakage current

Substitute parts are grouped into two categories: direct package equivalents (SOT-323) and package variants (SOT-23-3). Package variants require PCB layout modification but maintain electrical equivalence.

Parameter Comparison

Part Number Manufacturer Ic Max (mA) Vce Breakdown (V) Vce Sat (mV) hFE Min @ 2mA, 5V Power Max (mW) Freq Trans (MHz) Temp Range (°C) Package Status
BC848AW-7-F Diodes Incorporated 100 30 600 110 200 300 -65 to 150 SOT-323 Active
BC848W,115 Nexperia USA Inc. 100 30 600 110 200 100 -55 to 150 SOT-323 Active
BC848AW RFG Taiwan Semiconductor Corporation 100 30 600 110 200 100 -55 to 150 SOT-323 Active
BC848BE6327HTSA1 Infineon Technologies 100 30 600 200 330 250 -55 to 150 SOT-23-3 Last Time Buy
BC848BE6433HTMA1 Infineon Technologies 100 30 600 200 330 250 -55 to 150 SOT-23-3 Last Time Buy
BC848BLT1G onsemi 100 30 600 200 300 100 -55 to 150 SOT-23-3 Active
BC848BW RFG Taiwan Semiconductor Corporation 100 30 600 200 200 100 -55 to 150 SOT-323 Active
BC848BWT1G onsemi 100 30 600 200 150 100 -55 to 150 SOT-323 Active
BC848CE6433HTMA1 Infineon Technologies 100 30 600 420 330 250 -55 to 150 SOT-23-3 Last Time Buy
BC848CW RFG Taiwan Semiconductor Corporation 100 30 600 420 200 100 -55 to 150 SOT-323 Active
BC848CWT1G Fairchild Semiconductor 100 30 600 420 150 100 -55 to 150 SOT-323 Active

Engineering Selection Recommendations

Direct Package Equivalents (SOT-323 - No PCB Modification Required):

The following parts maintain identical package geometry and pin configuration to the BC848AW-7-F:

  • BC848W,115 (Nexperia USA Inc.): Active status. Electrical parameters meet minimum substitution criteria. Operating temperature range reduced to -55°C to 150°C. Suitable for applications not requiring extended low-temperature operation below -55°C.

  • BC848AW RFG (Taiwan Semiconductor Corporation): Active status. Electrical parameters meet minimum substitution criteria. Operating temperature range -55°C to 150°C. Recommended as primary substitute for equivalent performance.

  • BC848BW RFG (Taiwan Semiconductor Corporation): Active status. Enhanced DC current gain (hFE = 200 min) provides improved switching characteristics. Operating temperature range -55°C to 150°C. Suitable for applications benefiting from higher current gain.

  • BC848BWT1G (onsemi): Active status. Enhanced DC current gain (hFE = 200 min). Power dissipation reduced to 150 mW. Operating temperature range -55°C to 150°C. Suitable for power-constrained applications.

  • BC848CW RFG (Taiwan Semiconductor Corporation): Active status. Maximum DC current gain (hFE = 420 min) for highest switching speed. Operating temperature range -55°C to 150°C. Suitable for high-gain switching applications.

  • BC848CWT1G (Fairchild Semiconductor): Active status. Maximum DC current gain (hFE = 420 min). Power dissipation reduced to 150 mW. Operating temperature range -55°C to 150°C. Suitable for power-constrained, high-gain applications.

Package Variant Equivalents (SOT-23-3 - PCB Layout Modification Required):

The following parts require PCB redesign due to different package geometry but maintain electrical equivalence:

  • BC848BE6327HTSA1 (Infineon Technologies): Last Time Buy status. Enhanced DC current gain (hFE = 200 min) and power dissipation (330 mW). Transition frequency 250 MHz. Operating temperature range -55°C to 150°C. Suitable for applications requiring higher power handling.

  • BC848BE6433HTMA1 (Infineon Technologies): Last Time Buy status. Enhanced DC current gain (hFE = 200 min) and power dissipation (330 mW). Transition frequency 250 MHz. Operating temperature range -55°C to 150°C. Suitable for applications requiring higher power handling.

  • BC848BLT1G (onsemi): Active status. Enhanced DC current gain (hFE = 200 min) and power dissipation (300 mW). Operating temperature range -55°C to 150°C. Recommended for new designs requiring SOT-23-3 package.

  • BC848CE6433HTMA1 (Infineon Technologies): Last Time Buy status. Maximum DC current gain (hFE = 420 min) and power dissipation (330 mW). Transition frequency 250 MHz. Operating temperature range -55°C to 150°C. Suitable for high-gain, high-power applications.

Compliance and Certification:

All substitute parts maintain ROHS3 compliance and Moisture Sensitivity Level 1 (Unlimited) rating, ensuring compatibility with standard manufacturing processes and storage requirements.

Frequently Asked Questions (FAQ)

Q: Can BC848W,115 directly replace BC848AW-7-F without PCB modification?

A: Yes. Both parts use identical SOT-323 package geometry and pin configuration. Electrical parameters meet substitution criteria. The operating temperature range is reduced to -55°C to 150°C; verify application does not require operation below -55°C.

Q: What is the difference between BC848AW-7-F and BC848BW RFG?

A: Both parts maintain identical maximum ratings and package. BC848BW RFG features enhanced DC current gain (hFE = 200 min versus 110 min), resulting in faster switching response. Transition frequency remains 100 MHz. Select BC848BW RFG for applications requiring improved switching speed.

Q: Why do some substitute parts have higher power dissipation ratings?

A: Parts such as BC848BE6327HTSA1 and BC848BE6433HTMA1 are packaged in SOT-23-3 (larger than SOT-323), allowing greater power handling capability (330 mW versus 200 mW). These parts are suitable for applications with higher power requirements but require PCB layout modification.

Q: Can I use BC848BE6327HTSA1 as a drop-in replacement for BC848AW-7-F?

A: No. BC848BE6327HTSA1 uses SOT-23-3 package, which has different pin spacing and footprint compared to SOT-323. PCB redesign is required. However, electrical parameters are compatible for circuit functionality.

Q: What does "Last Time Buy" status mean for BC848BE6327HTSA1 and BC848BE6433HTMA1?

A: Last Time Buy status indicates the manufacturer has announced end-of-production. These parts remain available in current inventory but will not be manufactured after a specified date. For new designs, select parts with Active status such as BC848BLT1G.

Q: Which substitute part offers the best performance for high-frequency switching applications?

A: BC848BE6327HTSA1, BC848BE6433HTMA1, and BC848CE6433HTMA1 feature transition frequency of 250 MHz (versus 300 MHz for BC848AW-7-F and 100 MHz for most other substitutes). These parts require SOT-23-3 package accommodation.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts maintain ROHS3 compliance and Moisture Sensitivity Level 1 (Unlimited), ensuring compatibility with standard manufacturing and storage protocols.

Q: What is the significance of DC current gain (hFE) variations among substitute parts?

A: DC current gain determines base current requirements for saturation. Higher hFE values (200 or 420) require lower base current for equivalent collector current, improving switching efficiency. Lower hFE values (110) require higher base current but maintain circuit functionality if base drive is adequate.

Q: Can I use BC848CWT1G in applications with strict power budget constraints?

A: Yes. BC848CWT1G features reduced power dissipation (150 mW) while maintaining maximum DC current gain (hFE = 420 min). This combination provides efficient switching with minimal thermal generation. Verify application does not exceed 150 mW continuous dissipation.

Q: What is the minimum operating temperature difference between BC848AW-7-F and substitute parts?

A: BC848AW-7-F operates from -65°C to 150°C. Most substitute parts operate from -55°C to 150°C, representing a 10°C reduction in minimum temperature. Verify application does not require operation below -55°C before substitution.

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