BC847C Equivalent & Substitute Parts

Part Overview

The BC847C is an NPN bipolar junction transistor manufactured by Diotec Semiconductor in SOT-23-3 surface mount packaging. This device operates at a maximum collector voltage of 45 V with a collector current rating of 100 mA and a transition frequency of 300 MHz. The BC847C is classified as an active product and is widely used in general-purpose switching and amplification applications across consumer and industrial electronics.

Substitute parts are necessary when the primary device becomes unavailable, when alternative manufacturers offer equivalent performance at different price points, or when design requirements necessitate specific certifications such as automotive qualification or enhanced compliance standards.

Substiute Parts

BC847C
Diotec SemiconductorIn Stock: 1288569BC847C Datasheet
BC847C
Current Part
BC847C
Taiwan Semiconductor CorporationIn Stock: 1288521BC847C Datasheet
BC847C
Parametric Equivalent
BC850C
Diotec SemiconductorIn Stock: 95354BC850C Datasheet
BC850C
Parametric Equivalent
2PD601ART,215
Nexperia USA Inc.In Stock: 102392PD601ART,215 Datasheet
2PD601ART,215
Similar
2PD601ASL,235
Nexperia USA Inc.In Stock: 218082PD601ASL,235 Datasheet
2PD601ASL,235
Similar
BC847,215
Nexperia USA Inc.In Stock: 102157BC847,215 Datasheet
BC847,215
Similar
BC847A RFG
Taiwan Semiconductor CorporationIn Stock: 9923BC847A RFG Datasheet
BC847A RFG
Similar
BC847A-7-F
Diodes IncorporatedIn Stock: 6210BC847A-7-F Datasheet
BC847A-7-F
Similar
BC847B RFG
Taiwan Semiconductor CorporationIn Stock: 20791BC847B RFG Datasheet
BC847B RFG
Similar
BC847B-TP
Micro Commercial CoIn Stock: 1000141BC847B-TP Datasheet
BC847B-TP
Similar
BC847BLT1G
onsemiIn Stock: 125276BC847BLT1G Datasheet
BC847BLT1G
Similar
BC847C RFG
Taiwan Semiconductor CorporationIn Stock: 9921BC847C RFG Datasheet
BC847C RFG
Similar
BC847C-13-F
Diodes IncorporatedIn Stock: 100499BC847C-13-F Datasheet
BC847C-13-F
Similar
BC847CE6327HTSA1
Infineon TechnologiesIn Stock: 14225BC847CE6327HTSA1 Datasheet
BC847CE6327HTSA1
Similar
BC847CLT1G
onsemiIn Stock: 80210BC847CLT1G Datasheet
BC847CLT1G
Similar
BC848BT116
Rohm SemiconductorIn Stock: 6509BC848BT116 Datasheet
BC848BT116
Similar
BC850B,235
Nexperia USA Inc.In Stock: 7524BC850B,235 Datasheet
BC850B,235
Similar
BC850BLT1G
onsemiIn Stock: 65228BC850BLT1G Datasheet
BC850BLT1G
Similar
BC850CLT1G
onsemiIn Stock: 254406BC850CLT1G Datasheet
BC850CLT1G
Similar
BCW72LT1G
onsemiIn Stock: 65188BCW72LT1G Datasheet
BCW72LT1G
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Collector Current (Max) 100 mA
Collector-Emitter Breakdown Voltage (Max) 45 V
Power Dissipation (Max) 250 mW
Transition Frequency 300 MHz
Operating Temperature Range -55 to 150 °C
Package Type SOT-23-3 (TO-236)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the BC847C is determined by strict adherence to the following electrical and mechanical parameters:

Critical Parameters for Direct Substitution:

  • Transistor type must be NPN
  • Collector current rating must be 100 mA or greater
  • Collector-emitter breakdown voltage must be 45 V or greater
  • Package must be SOT-23-3, SC-59, or TO-236-3 (mechanically and electrically equivalent)
  • Mounting type must be surface mount

Secondary Parameters Affecting Compatibility:

  • Power dissipation: 250 mW or greater ensures thermal compatibility
  • Transition frequency: 300 MHz or greater maintains high-frequency performance
  • DC current gain (hFE): Minimum 420 @ 2 mA, 5 V ensures switching characteristics
  • Vce saturation: 600 mV @ 5 mA, 100 mA or lower ensures efficient switching operation

Parts are grouped into two categories:

Parametric Equivalents: Parts that match all critical electrical parameters and package specifications of the BC847C, enabling direct substitution without circuit modification.

Similar Parts: Parts that meet the critical electrical requirements but may differ in secondary parameters such as transition frequency, power dissipation, or DC current gain. These parts are suitable for applications where the specific performance difference does not impact circuit function.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(br) V Power mW Freq MHz hFE @ 2mA, 5V Vce Sat mV Package RoHS
BC847C Diotec Semiconductor 100 45 250 300 420 600 SOT-23-3 Not Applicable
BC847C Taiwan Semiconductor Corporation 100 45 200 100 420 500 SOT-23 ROHS3 Compliant
BC850C Diotec Semiconductor 100 45 250 300 420 600 SOT-23-3 Not Applicable
2PD601ART,215 Nexperia USA Inc. 100 50 250 100 210 250 TO-236AB ROHS3 Compliant
2PD601ASL,235 Nexperia USA Inc. 100 50 250 100 290 250 TO-236AB ROHS3 Compliant
BC847,215 Nexperia USA Inc. 100 45 250 100 110 400 TO-236AB ROHS3 Compliant
BC847A RFG Taiwan Semiconductor Corporation 100 45 200 100 110 500 SOT-23 ROHS3 Compliant
BC847A-7-F Diodes Incorporated 100 45 300 300 110 600 SOT-23-3 ROHS3 Compliant
BC847B RFG Taiwan Semiconductor Corporation 100 45 200 100 200 500 SOT-23 ROHS3 Compliant
BC847B-TP Micro Commercial Co 100 45 225 100 200 500 SOT-23 ROHS3 Compliant
BC847BLT1G onsemi 100 45 300 100 200 600 SOT-23-3 ROHS3 Compliant

Engineering Selection Recommendations

Parametric Equivalents for Direct Substitution:

The BC847C manufactured by Taiwan Semiconductor Corporation and the BC850C manufactured by Diotec Semiconductor are parametric equivalents. Both devices match the critical electrical specifications of the primary BC847C part. The Taiwan Semiconductor version offers ROHS3 compliance, which may be required for applications subject to environmental regulations. Selection between these equivalents depends on supply chain availability and compliance requirements of the end application.

Similar Parts for Application-Specific Selection:

The 2PD601ART,215 and 2PD601ASL,235 manufactured by Nexperia USA Inc. are automotive-qualified devices bearing AEC-Q101 certification. These parts exceed the collector-emitter breakdown voltage specification at 50 V and feature lower saturation voltage (250 mV), making them suitable for applications requiring automotive-grade reliability. The higher breakdown voltage provides additional design margin in voltage-sensitive circuits.

The BC847,215 manufactured by Nexperia USA Inc. operates at the same 45 V breakdown voltage as the BC847C but exhibits lower DC current gain (110 vs. 420). This part is suitable for applications where current gain variation does not affect circuit performance.

The BC847A RFG and BC847B RFG manufactured by Taiwan Semiconductor Corporation, along with BC847A-7-F manufactured by Diodes Incorporated, represent lower-gain variants (hFE 110 to 200) with reduced transition frequency (100 MHz). These parts are appropriate for low-frequency switching applications where the 300 MHz capability of the BC847C is not required.

The BC847B-TP manufactured by Micro Commercial Co and BC847BLT1G manufactured by onsemi provide intermediate gain characteristics (hFE 200) with power dissipation ratings of 225 mW and 300 mW respectively. Both are ROHS3 compliant and suitable for general-purpose applications.

All substitute parts listed maintain the SOT-23-3 or equivalent TO-236-3 package format, ensuring mechanical compatibility with existing PCB layouts and assembly processes.

Frequently Asked Questions (FAQ)

Q: Can the BC847C be replaced with the BC850C?

A: Yes. The BC850C is a parametric equivalent manufactured by Diotec Semiconductor. Both devices share identical electrical specifications including 100 mA collector current, 45 V breakdown voltage, 250 mW power dissipation, and 300 MHz transition frequency. The BC850C is a direct substitute requiring no circuit modification.

Q: What is the difference between the BC847C and the 2PD601 series?

A: The 2PD601ART,215 and 2PD601ASL,235 are automotive-qualified alternatives with a higher collector-emitter breakdown voltage of 50 V compared to the BC847C at 45 V. Both 2PD601 variants feature significantly lower saturation voltage (250 mV vs. 600 mV), resulting in reduced power dissipation during saturation. These parts are suitable for automotive applications requiring AEC-Q101 certification. The lower DC current gain of the 2PD601 series (210 to 290) differs from the BC847C (420), which may affect switching speed in gain-dependent circuits.

Q: Are all substitute parts ROHS3 compliant?

A: No. The primary BC847C manufactured by Diotec Semiconductor is listed as "Not Applicable" for RoHS status. However, equivalent and similar parts from Taiwan Semiconductor Corporation, Nexperia USA Inc., Diodes Incorporated, Micro Commercial Co, and onsemi are all ROHS3 compliant. Selection of ROHS3-compliant substitutes is necessary for applications subject to environmental regulations or customer requirements.

Q: Can I use a BC847A or BC847B variant instead of the BC847C?

A: Yes, with circuit verification. The BC847A and BC847B variants are similar parts with lower DC current gain (110 and 200 respectively) compared to the BC847C (420). Both variants operate at 45 V breakdown voltage and 100 mA collector current. The reduced gain may affect switching speed and circuit performance in applications where current gain is a critical design parameter. Transition frequency is reduced to 100 MHz in these variants. Use these parts only in applications where the performance difference does not impact circuit function.

Q: What is the significance of the transition frequency difference between the BC847C (300 MHz) and similar parts (100 MHz)?

A: Transition frequency (fT) determines the maximum frequency at which the transistor can amplify signals. The BC847C at 300 MHz is suitable for high-frequency switching and RF applications. Similar parts rated at 100 MHz are limited to lower-frequency applications. For DC switching or low-frequency amplification below 100 MHz, the reduced transition frequency does not impact performance. For applications requiring operation above 100 MHz, only the BC847C or equivalent high-frequency variants should be used.

Q: Are the SOT-23 and SOT-23-3 packages interchangeable?

A: Yes. SOT-23 and SOT-23-3 are equivalent package designations for the same physical form factor. Both refer to a three-terminal surface mount package with identical pin spacing and PCB footprint. Parts specified as SOT-23, SC-59, or TO-236-3 are mechanically and electrically interchangeable on the same PCB layout.

Q: Which substitute part should I select for automotive applications?

A: The 2PD601ART,215 and 2PD601ASL,235 manufactured by Nexperia USA Inc. are the appropriate choices for automotive applications. Both parts carry AEC-Q101 qualification, indicating compliance with automotive reliability standards. These parts feature 50 V breakdown voltage and lower saturation voltage compared to the BC847C, providing enhanced performance margin in automotive circuits.

Q: What is the impact of saturation voltage differences on circuit design?

A: Saturation voltage (Vce sat) determines the minimum voltage drop across the transistor when fully conducting. The BC847C exhibits 600 mV saturation voltage, while the 2PD601 series exhibits 250 mV. Lower saturation voltage reduces power dissipation and heat generation during switching. In power-sensitive applications, the 2PD601 series provides improved efficiency. In general-purpose switching applications, the difference is typically not critical to circuit function.

Q: Can I substitute a lower-gain variant (BC847A, hFE 110) for the BC847C (hFE 420)?

A: Substitution is possible only if circuit design does not depend on high current gain. Lower-gain variants require higher base current to achieve the same collector current, potentially affecting switching speed and circuit performance. Verify that the application can tolerate the reduced gain before implementing this substitution. For circuits designed specifically around the BC847C gain characteristics, use only equivalent or higher-gain variants.

Request Quote (Ships tomorrow)