BC847BW-TP Equivalent & Substitute Parts

Part Overview

The BC847BW-TP is an NPN bipolar junction transistor manufactured by Micro Commercial Co in SOT-323 surface mount packaging. This small-signal transistor operates at 45 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and transition frequency of 100 MHz. The device is classified as Active product status with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across the specified parameter ranges. Alternative sources and variants exist due to manufacturing availability, supply chain considerations, and design flexibility within the BC847 family specifications.

Substiute Parts

BC847BW-TP
Micro Commercial CoIn Stock: 4143BC847BW-TP Datasheet
BC847BW-TP
Current Part
BC847BW,135
Nexperia USA Inc.In Stock: 3748BC847BW,135 Datasheet
BC847BW,135
Direct
BC847BW-7-F
Diodes IncorporatedIn Stock: 974268BC847BW-7-F Datasheet
BC847BW-7-F
Direct
BC847BWT1G
onsemiIn Stock: 155500BC847BWT1G Datasheet
BC847BWT1G
Direct
BC850BW,115
Nexperia USA Inc.In Stock: 12348BC850BW,115 Datasheet
BC850BW,115
Direct
MSD1819A-RT1G
onsemiIn Stock: 2588MSD1819A-RT1G Datasheet
MSD1819A-RT1G
Direct
BC850BW,135
Nexperia USA Inc.In Stock: 10669BC850BW,135 Datasheet
BC850BW,135
Upgrade
BC847AW RFG
Taiwan Semiconductor CorporationIn Stock: 18956BC847AW RFG Datasheet
BC847AW RFG
Similar
BC847AW,135
Nexperia USA Inc.In Stock: 9778BC847AW,135 Datasheet
BC847AW,135
Similar
BC847BW RFG
Taiwan Semiconductor CorporationIn Stock: 18898BC847BW RFG Datasheet
BC847BW RFG
Similar
BC847BW,115
NXP USA Inc.In Stock: 2142BC847BW,115 Datasheet
BC847BW,115
Similar
BC847CW RFG
Taiwan Semiconductor CorporationIn Stock: 18816BC847CW RFG Datasheet
BC847CW RFG
Similar
BC847CW,115
Nexperia USA Inc.In Stock: 912693BC847CW,115 Datasheet
BC847CW,115
Similar
BC847CW-7-F
Diodes IncorporatedIn Stock: 9143BC847CW-7-F Datasheet
BC847CW-7-F
Similar
BC847CWQ-7-F
Diodes IncorporatedIn Stock: 53240BC847CWQ-7-F Datasheet
BC847CWQ-7-F
Similar
BC850AW RFG
Taiwan Semiconductor CorporationIn Stock: 19004BC850AW RFG Datasheet
BC850AW RFG
Similar
BC850BW RFG
Taiwan Semiconductor CorporationIn Stock: 19179BC850BW RFG Datasheet
BC850BW RFG
Similar
BC850BWH6327XTSA1
Infineon TechnologiesIn Stock: 1101BC850BWH6327XTSA1 Datasheet
BC850BWH6327XTSA1
Similar
BC850CW RFG
Taiwan Semiconductor CorporationIn Stock: 18969BC850CW RFG Datasheet
BC850CW RFG
Similar
BC850CW,115
Nexperia USA Inc.In Stock: 40427BC850CW,115 Datasheet
BC850CW,115
Similar
MMBT2222AWT3G
onsemiIn Stock: 84699MMBT2222AWT3G Datasheet
MMBT2222AWT3G
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SBC847AWT1G
onsemiIn Stock: 1448SBC847AWT1G Datasheet
SBC847AWT1G
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SBC847CWT1G
onsemiIn Stock: 17862SBC847CWT1G Datasheet
SBC847CWT1G
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SBC847CWT3G
onsemiIn Stock: 6414SBC847CWT3G Datasheet
SBC847CWT3G
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 45 V
Current - Collector (Ic) (Max) 100 mA
Vce Saturation (Max) @ Ib, Ic 600 mV @ 5 mA, 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2 mA, 5 V
Frequency - Transition 100 MHz
Operating Temperature Range -65 to 150 °C
Package / Case SC-70, SOT-323
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for the BC847BW-TP is determined by the following critical parameters:

Electrical Compatibility Requirements:

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 45 V or greater
  • Current - Collector (Ic) (Max): 100 mA or greater
  • DC Current Gain (hFE) (Min): 200 or greater at specified bias conditions
  • Frequency - Transition: 100 MHz or greater

Mechanical Compatibility Requirements:

  • Package / Case: SC-70 or SOT-323
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323 or SC-70-3 (SOT323)

Compliance Requirements:

  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Product Status: Active

Substitute parts are grouped into three categories: Direct equivalents maintain identical electrical specifications and packaging; Upgrade variants provide enhanced performance characteristics while maintaining backward compatibility; Similar variants operate within the BC847 family with minor parameter variations that remain functionally compatible.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce Breakdown (Max) V hFE (Min) @ 2mA, 5V Frequency MHz Temp Range °C Package Power mW
BC847BW-TP Micro Commercial Co 100 45 200 100 -65 to 150 SOT-323
BC847BW,135 Nexperia USA Inc. 100 45 200 100 -40 to 150 SOT-323 200
BC847BW-7-F Diodes Incorporated 100 45 200 300 -65 to 150 SOT-323 200
BC847BWT1G onsemi 100 45 200 100 -55 to 150 SOT-323 150
BC850BW,115 Nexperia USA Inc. 100 45 200 100 -40 to 150 SOT-323 200
BC850BW,135 Nexperia USA Inc. 100 45 200 100 -40 to 150 SOT-323 200
BC847AW RFG Taiwan Semiconductor Corporation 100 45 110 100 -55 to 150 SOT-323 200
BC847AW,135 Nexperia USA Inc. 100 45 110 100 -40 to 150 SOT-323 200
BC847BW RFG Taiwan Semiconductor Corporation 100 45 200 100 -55 to 150 SOT-323 200
BC847BW,115 NXP USA Inc. 100 45 200 100 -40 to 150 SOT-323 200
MSD1819A-RT1G onsemi 100 50 210 -40 to 150 SOT-323 150

Engineering Selection Recommendations

Direct Equivalent Selection:

BC847BW,135 (Nexperia USA Inc.) and BC847BW RFG (Taiwan Semiconductor Corporation) provide direct electrical equivalence to the BC847BW-TP. Both maintain 100 mA collector current, 45 V breakdown voltage, 200 minimum hFE, and 100 MHz transition frequency. Both are ROHS3 compliant with MSL 1 rating and Active product status. Selection between these options depends on supply chain availability and manufacturing source preference.

Enhanced Performance Option:

BC847BW-7-F (Diodes Incorporated) offers upgraded transition frequency of 300 MHz while maintaining all other electrical specifications identical to the main part. This variant is suitable for applications requiring higher frequency performance within the same voltage and current envelope. Operating temperature range matches the original specification (-65°C to 150°C).

Automotive Grade Alternatives:

BC850BW,115 and BC850BW,135 (Nexperia USA Inc.) are automotive-qualified variants with AEC-Q101 certification. These parts maintain electrical equivalence with 100 mA, 45 V, 200 hFE, and 100 MHz specifications. Selection of these parts is required for automotive applications demanding AEC-Q101 qualification.

Lower Gain Variants:

BC847AW RFG (Taiwan Semiconductor Corporation) and BC847AW,135 (Nexperia USA Inc.) provide minimum hFE of 110 at specified bias conditions, compared to 200 for the main part. These variants are suitable for applications where lower current gain is acceptable and may offer cost or availability advantages.

Extended Voltage Rating Option:

MSD1819A-RT1G (onsemi) provides 50 V collector-emitter breakdown voltage, exceeding the 45 V specification of the main part. This variant is applicable in designs requiring higher voltage margin while maintaining 100 mA current and similar frequency characteristics.

Frequently Asked Questions (FAQ)

Q: Can BC847BW,135 directly replace BC847BW-TP in all applications?

A: BC847BW,135 maintains electrical equivalence across all critical parameters: 100 mA collector current, 45 V breakdown voltage, 200 minimum hFE, and 100 MHz transition frequency. Both are ROHS3 compliant with MSL 1 rating. The primary difference is operating temperature range: BC847BW-TP operates -65°C to 150°C while BC847BW,135 operates -40°C to 150°C. Selection depends on whether the application requires the extended low-temperature performance of the original part.

Q: What is the difference between BC847BW and BC850BW variants?

A: BC847BW and BC850BW are both NPN transistors in the SOT-323 package with identical electrical specifications: 100 mA, 45 V, 200 hFE, and 100 MHz. The BC850BW variants carry automotive AEC-Q101 qualification, making them suitable for automotive applications. Selection between these families depends on application requirements for automotive certification.

Q: Why would BC847BW-7-F be selected over BC847BW-TP?

A: BC847BW-7-F offers 300 MHz transition frequency compared to 100 MHz for BC847BW-TP, while maintaining identical voltage, current, and gain specifications. This enhanced frequency performance is beneficial in high-speed switching applications. The part is suitable for direct substitution when higher frequency capability is required.

Q: Are BC847AW variants compatible with BC847BW applications?

A: BC847AW variants have minimum hFE of 110 compared to 200 for BC847BW. Both maintain 100 mA, 45 V, and 100 MHz specifications. Compatibility depends on circuit design: applications with gain-dependent biasing may require design adjustment. Applications with fixed base resistor biasing typically tolerate the lower gain without modification.

Q: What packaging options are available for BC847BW-TP substitutes?

A: All listed substitute parts use SC-70 or SOT-323 surface mount packaging, maintaining mechanical compatibility with BC847BW-TP. BC847BWT1G is supplied in Cut Tape (CT) & Digi-Reel packaging, while most other variants use standard Tape & Reel (TR) packaging. Packaging format selection depends on assembly process requirements.

Q: Is MSD1819A-RT1G suitable as a substitute for BC847BW-TP?

A: MSD1819A-RT1G provides 50 V collector-emitter breakdown voltage, exceeding the 45 V specification. It maintains 100 mA collector current and similar frequency characteristics. This part is suitable for applications where higher voltage rating provides design margin. The transition frequency specification is not provided for this part.

Q: What compliance certifications apply to all substitute parts?

A: All listed substitute parts are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level and REACH Unaffected status. BC850BW,115 and BC850BW,135 additionally carry AEC-Q101 automotive qualification. All parts are classified as Active product status.

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