BC847BW NPN Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The BC847BW is an NPN bipolar junction transistor manufactured by Taiwan Semiconductor Corporation, designed for small-signal switching and amplification applications. This surface-mount device operates at 45V collector-emitter breakdown voltage with a maximum collector current of 100mA and 100MHz transition frequency. The part is Active status and RoHS3 compliant, with 215,400 units in current inventory. Equivalent and substitute parts are identified to support design flexibility, supply chain continuity, and application-specific performance requirements within the SOT-323 package family.

Substiute Parts

BC847BW
Taiwan Semiconductor CorporationIn Stock: 215484BC847BW Datasheet
BC847BW
Current Part
BC847BW-TP
Micro Commercial CoIn Stock: 4143BC847BW-TP Datasheet
BC847BW-TP
Upgrade
BC847AW,115
NXP SemiconductorsIn Stock: 454175BC847AW,115 Datasheet
BC847AW,115
Similar
BC847AWT1G
onsemiIn Stock: 30255BC847AWT1G Datasheet
BC847AWT1G
Similar
BC847CW-7-F
Diodes IncorporatedIn Stock: 9143BC847CW-7-F Datasheet
BC847CW-7-F
Similar
BC847CWT3G
onsemiIn Stock: 17881BC847CWT3G Datasheet
BC847CWT3G
Similar
PMST6428,135
NXP USA Inc.In Stock: 690203PMST6428,135 Datasheet
PMST6428,135
Similar
SBC847BWT1G
onsemiIn Stock: 966SBC847BWT1G Datasheet
SBC847BWT1G
Similar
BC847BW
Taiwan Semiconductor CorporationIn Stock: 215484BC847BW Datasheet
BC847BW
Parametric Equivalent
BC847BW,115
NXP USA Inc.In Stock: 2142BC847BW,115 Datasheet
BC847BW,115
Parametric Equivalent
BC847BW,135
Nexperia USA Inc.In Stock: 3748BC847BW,135 Datasheet
BC847BW,135
Parametric Equivalent
BC847BW-QF
Nexperia USA Inc.In Stock: 50704BC847BW-QF Datasheet
BC847BW-QF
Parametric Equivalent
BC850BW,115
Nexperia USA Inc.In Stock: 12348BC850BW,115 Datasheet
BC850BW,115
Parametric Equivalent
BC850BW,135
Nexperia USA Inc.In Stock: 10669BC850BW,135 Datasheet
BC850BW,135
Parametric Equivalent

Key Parameters

Parameter Value Unit
Transistor Type NPN
Collector Current (Ic) Maximum 100 mA
Collector-Emitter Breakdown Voltage (Max) 45 V
Vce Saturation @ Ib 5mA, Ic 100mA 600 mV
Collector Cutoff Current (ICBO) 15 nA
DC Current Gain (hFE) @ Ic 2mA, Vce 5V 200
Power Dissipation Maximum 200 mW
Transition Frequency 100 MHz
Operating Temperature Range -55 to 150 °C
Package Type SOT-323 (SC-70)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the BC847BW are classified based on strict electrical and mechanical parameter compatibility within the allowed specifications for NPN small-signal bipolar transistors in surface-mount packages.

Primary Substitution Criteria:

  • Transistor Type: NPN (mandatory match)
  • Collector Current (Ic) Maximum: 100mA (exact match required)
  • Collector-Emitter Breakdown Voltage: 45V minimum (45V or higher acceptable)
  • Package Type: SOT-323 or SC-70 equivalent (mechanical compatibility)
  • Mounting Type: Surface Mount (process compatibility)
  • DC Current Gain (hFE) @ 2mA, 5V: 200 minimum (specification floor)
  • Transition Frequency: 100MHz minimum (performance floor)
  • Power Dissipation: 150mW or higher (thermal capability)
  • Operating Temperature: -55°C to 150°C minimum range (environmental compatibility)
  • RoHS3 Compliance: Required for regulatory alignment

Upgrade Category: Parts with enhanced specifications (higher voltage, frequency, or gain) that maintain backward compatibility.

Similar Category: Parts meeting core electrical parameters with variations in secondary characteristics (gain, frequency, saturation voltage, or temperature range).

Parametric Equivalent Category: Parts with identical electrical specifications and package type from different manufacturers.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(br) V Vce Sat mV hFE @ 2mA, 5V Freq MHz Power mW Temp Range °C Package Status
BC847BW Taiwan Semiconductor 100 45 600 200 100 200 -55 to 150 SOT-323 Active
BC847BW-TP Micro Commercial Co 100 45 600 200 100 200 -65 to 150 SOT-323 Active
BC847AW,115 NXP Semiconductors 100 45 400 110 100 200 -55 to 150 SOT-323 Active
BC847AWT1G onsemi 100 45 600 110 100 150 -55 to 150 SOT-323 Active
BC847CW-7-F Diodes Incorporated 100 45 600 420 300 200 -65 to 150 SOT-323 Active
BC847CWT3G onsemi 100 45 600 420 100 150 -55 to 150 SOT-323 Active
PMST6428,135 NXP USA Inc. 100 50 600 250 700 200 -55 to 150 SOT-323 Active
SBC847BWT1G onsemi 100 45 600 200 100 150 -55 to 150 SOT-363 Active
BC847BW,115 NXP USA Inc. 100 45 400 200 100 200 -55 to 150 SOT-323 Active
BC847BW,135 Nexperia USA Inc. 100 45 400 200 100 200 -55 to 150 SOT-323 Active

Engineering Selection Recommendations

Direct Parametric Equivalents (Identical Specifications):

BC847BW,115 (NXP USA Inc.) and BC847BW,135 (Nexperia USA Inc.) are parametric equivalents with identical electrical performance to the primary BC847BW part. Both maintain 100mA collector current, 45V breakdown voltage, 200 minimum hFE at 2mA/5V, and 100MHz transition frequency. The primary difference is Vce saturation at 400mV versus 600mV on the original part, representing improved saturation characteristics. Both are RoHS3 compliant and Active status. These parts are suitable for direct substitution in existing designs without circuit modification.

Upgrade Substitute (Enhanced Performance):

BC847BW-TP (Micro Commercial Co) provides extended operating temperature range (-65°C to 150°C versus -55°C to 150°C) while maintaining all core electrical specifications. This part is suitable for applications requiring wider temperature operation. Electrical performance is identical to the primary BC847BW.

Similar Substitutes (Core Parameters Met, Secondary Variations):

BC847AW,115 and BC847AWT1G both meet the 100mA/45V/100MHz core requirements but feature reduced DC current gain (110 hFE minimum versus 200). These parts are suitable for applications where lower gain is acceptable or beneficial for circuit stability. BC847AW,115 maintains 200mW power rating; BC847AWT1G operates at 150mW. Both are Active status and RoHS3 compliant.

BC847CW-7-F (Diodes Incorporated) and BC847CWT3G (onsemi) offer enhanced DC current gain (420 hFE minimum) and extended frequency response. BC847CW-7-F provides 300MHz transition frequency with full 200mW power rating and -65°C to 150°C temperature range. BC847CWT3G maintains 100MHz frequency with 150mW power rating. These parts are suitable for high-frequency or high-gain applications.

Enhanced Voltage Substitute:

PMST6428,135 (NXP USA Inc.) provides 50V collector-emitter breakdown voltage (versus 45V) with significantly enhanced transition frequency (700MHz versus 100MHz) and higher DC current gain (250 hFE minimum). This part is suitable for higher-voltage or high-frequency applications requiring superior performance margins. AEC-Q101 automotive qualification is included.

Package Variant:

SBC847BWT1G (onsemi) maintains identical electrical specifications to the primary BC847BW but uses SOT-363 (SC-88) package instead of SOT-323. This part is suitable only for designs with SOT-363 footprint compatibility. AEC-Q101 automotive qualification is included.

Compliance and Certification:

All listed substitute parts are Active status, RoHS3 compliant, and REACH unaffected. Parts designated with AEC-Q101 qualification (BC847AW,115, PMST6428,135, SBC847BWT1G) are suitable for automotive applications. Selection should consider application-specific compliance requirements.

Frequently Asked Questions (FAQ)

Q: Can BC847BW,115 or BC847BW,135 be used as direct replacements for BC847BW?

A: Yes. Both parts are parametric equivalents with identical collector current (100mA), breakdown voltage (45V), DC current gain (200 minimum at 2mA/5V), and transition frequency (100MHz). The saturation voltage is lower (400mV versus 600mV), which represents improved performance. Both are RoHS3 compliant and Active status. No circuit modification is required.

Q: What is the difference between BC847AW,115 and the primary BC847BW?

A: BC847AW,115 meets the core electrical requirements (100mA, 45V, 100MHz) but features reduced DC current gain (110 hFE minimum versus 200). This lower gain may affect circuit biasing and amplification characteristics. The part is suitable for applications where lower gain is acceptable or where circuit design compensates for reduced gain through increased base current.

Q: Can BC847CW-7-F replace BC847BW in all applications?

A: BC847CW-7-F meets all core electrical requirements and provides enhanced performance with 420 hFE minimum gain and 300MHz transition frequency. The higher frequency response and gain may affect circuit behavior in sensitive applications. Verification of circuit performance is necessary if the application relies on specific gain or frequency characteristics of the original BC847BW.

Q: What is the advantage of PMST6428,135 over BC847BW?

A: PMST6428,135 provides higher collector-emitter breakdown voltage (50V versus 45V), significantly higher transition frequency (700MHz versus 100MHz), and higher DC current gain (250 hFE minimum versus 200). These enhancements provide greater performance margins for high-frequency or high-voltage applications. The part includes AEC-Q101 automotive qualification.

Q: Is SBC847BWT1G compatible with BC847BW designs?

A: SBC847BWT1G is electrically equivalent to BC847BW but uses SOT-363 (SC-88) package instead of SOT-323. This part is compatible only with designs that have SOT-363 footprint and land pattern. PCB redesign is required for package conversion. The part includes AEC-Q101 automotive qualification.

Q: Why does BC847BW-TP have a wider temperature range (-65°C to 150°C)?

A: BC847BW-TP is specified for extended low-temperature operation down to -65°C versus -55°C on the primary BC847BW. This extended range accommodates applications requiring operation in extreme cold environments. All other electrical specifications remain identical.

Q: Can parts with different Vce saturation voltages (400mV vs 600mV) be interchanged?

A: Parts with lower Vce saturation (400mV) represent improved saturation characteristics and reduced power dissipation in saturated switching applications. Interchangeability depends on circuit design. If the circuit is designed for 600mV saturation, lower saturation voltage will not cause failure but may improve efficiency. If the circuit relies on specific saturation voltage for biasing, verification is necessary.

Q: What does RoHS3 compliance mean for these parts?

A: RoHS3 compliance indicates the parts meet Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, hexavalent chromium, and specific brominated flame retardants. All listed substitute parts are RoHS3 compliant, ensuring regulatory alignment for commercial and industrial applications.

Q: Are all substitute parts suitable for automotive applications?

A: Parts with AEC-Q101 qualification (BC847AW,115, PMST6428,135, SBC847BWT1G) are qualified for automotive use. Other parts are suitable for commercial and industrial applications. Automotive application requirements should be verified against specific qualification standards.

Request Quote (Ships tomorrow)