BC847BVN,115 Equivalent & Substitute Parts

Part Overview

The BC847BVN,115 is a Bipolar (BJT) Transistor Array featuring NPN and PNP configurations rated for 45V collector-emitter breakdown voltage and 100mA maximum collector current. Manufactured by Nexperia USA Inc., this component is supplied in SOT-666 surface mount packaging with Cut Tape and Digi-Reel® options. The device is classified as "Not For New Designs," indicating it has reached end-of-life status. Identification of equivalent and substitute parts is necessary to support existing designs, maintain production continuity, and evaluate active alternatives for new applications.

Substiute Parts

BC847BVN,115

Nexperia USA Inc.In Stock: 21978BC847BVN,115 Datasheet

Current PartRFQ

BC847BPDXV6T1G

onsemiIn Stock: 89447BC847BPDXV6T1G Datasheet

DirectRFQ

BC847BLT1G

onsemiIn Stock: 125276BC847BLT1G Datasheet

SimilarRFQ

BC847BVN-7

Diodes IncorporatedIn Stock: 5282BC847BVN-7 Datasheet

SimilarRFQ

NST3946DXV6T1G

onsemiIn Stock: 5128NST3946DXV6T1G Datasheet

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SBC847BPDXV6T1G

onsemiIn Stock: 19771SBC847BPDXV6T1G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the BC847BVN,115 is determined by alignment of the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Transistor Type configuration (NPN, PNP, or array composition)
• Maximum Collector Current (Ic): 100mA minimum
• Collector-Emitter Breakdown Voltage (VCEO): 45V minimum
• DC Current Gain (hFE): 200 minimum at specified test conditions
• Transition Frequency: 100MHz minimum
• Power dissipation capability: 300mW minimum

Mechanical Compatibility Criteria:

• Surface mount packaging (SOT-563, SOT-666, or SOT-23-3)
• Pin configuration compatibility with PCB layout

Compliance Criteria:

• RoHS3 compliance
• Automotive grade and AEC-Q101 qualification (where applicable)

Substitute parts are grouped into two categories: Direct Substitutes (matching all critical parameters and package options) and Similar Substitutes (meeting electrical requirements with package or configuration variations).

Parameter Comparison

Engineering Selection Recommendations

BC847BPDXV6T1G (onsemi)

This part is an active substitute offering equivalent electrical performance to the BC847BVN,115. It maintains the same maximum collector current (100mA), collector-emitter breakdown voltage (45V), and DC current gain specifications. The part is supplied in SOT-563 packaging with Tape & Reel options. Higher power dissipation capability (357mW vs. 300mW) provides additional thermal margin. Extended operating temperature range (-55°C to 150°C) exceeds the original specification. RoHS3 compliance is maintained. This substitute is suitable for applications where package transition from SOT-666 to SOT-563 is acceptable.

BC847BLT1G (onsemi)

This part is an active substitute with NPN-only configuration. It meets the electrical requirements of the BC847BVN,115 for NPN operation, including 100mA collector current, 45V breakdown voltage, and 200 minimum DC current gain. Packaging is SOT-23-3 (TO-236), which differs from the original SOT-666. Extended operating temperature range (-55°C to 150°C) is provided. RoHS3 compliance is maintained. This substitute is applicable to designs requiring only NPN functionality and where SOT-23-3 package footprint is compatible.

BC847BVN-7 (Diodes Incorporated)

This part is an active substitute with 1 NPN and 1 PNP configuration matching the original transistor type composition. Electrical parameters align with the BC847BVN,115, including 100mA collector current and 45V breakdown voltage. Transition frequency is enhanced (300MHz and 200MHz vs. 100MHz). Packaging is SOT-563. Extended operating temperature range (-65°C to 150°C) exceeds the original specification. RoHS3 compliance is maintained. Power dissipation is reduced (150mW vs. 300mW), which may limit thermal performance in high-power applications. This substitute is suitable for applications where enhanced frequency performance is beneficial and thermal requirements are within the reduced power rating.

NST3946DXV6T1G (onsemi)

This part is a similar substitute with enhanced electrical performance. Maximum collector current is doubled (200mA vs. 100mA) and power dissipation is significantly increased (500mW vs. 300mW). Collector-emitter breakdown voltage is reduced to 40V, which is below the original 45V specification and may limit applicability in high-voltage circuits. Transition frequency is enhanced (300MHz and 250MHz). DC current gain is lower (100 minimum vs. 200 minimum). Packaging is SOT-563. Extended operating temperature range (-55°C to 150°C) is provided. RoHS3 compliance is maintained. This substitute is applicable only to applications where the 40V breakdown voltage is acceptable and higher current capability is required.

SBC847BPDXV6T1G (onsemi)

This part is an active substitute with automotive grade and AEC-Q101 qualification matching the original BC847BVN,115. Electrical parameters are equivalent, including 100mA collector current, 45V breakdown voltage, and 200 minimum DC current gain. Power dissipation is increased (357mW vs. 300mW). Packaging is SOT-563. Extended operating temperature range (-55°C to 150°C) is provided. RoHS3 compliance is maintained. Automotive qualification and AEC-Q101 certification align with the original part's automotive-grade status. This substitute is the preferred choice for automotive applications requiring equivalent performance with active product status.

Frequently Asked Questions (FAQ)

Q: Can BC847BPDXV6T1G replace BC847BVN,115 in existing designs?

A: BC847BPDXV6T1G is electrically equivalent in terms of collector current (100mA), breakdown voltage (45V), and DC current gain (200 minimum). The primary consideration is package compatibility. BC847BPDXV6T1G uses SOT-563 packaging while BC847BVN,115 uses SOT-666. PCB layout and footprint must be evaluated for compatibility. Both parts are RoHS3 compliant and surface mount devices.

Q: What is the difference between BC847BLT1G and BC847BVN,115?

A: BC847BLT1G is an NPN-only transistor, whereas BC847BVN,115 is a transistor array containing both NPN and PNP devices. If the design requires both NPN and PNP functionality, BC847BLT1G cannot serve as a direct replacement. BC847BLT1G is suitable only for applications using the NPN portion of the original array. Package format differs (SOT-23-3 vs. SOT-666).

Q: Why is NST3946DXV6T1G listed as a similar substitute rather than a direct substitute?

A: NST3946DXV6T1G has a reduced collector-emitter breakdown voltage of 40V compared to the BC847BVN,115 specification of 45V. This 5V reduction may impact circuits designed to operate near the 45V limit. Additionally, the DC current gain is lower (100 minimum vs. 200 minimum). While the part offers higher current capability (200mA) and power dissipation (500mW), these differences require circuit-level evaluation before substitution.

Q: Is SBC847BPDXV6T1G suitable for automotive applications?

A: Yes. SBC847BPDXV6T1G carries automotive grade designation and AEC-Q101 qualification, matching the original BC847BVN,115. Electrical parameters are equivalent (100mA, 45V, 200 minimum hFE). This part is the recommended substitute for automotive applications requiring active product status and maintained qualification levels.

Q: What packaging options are available among the substitute parts?

A: Substitute parts are available in three surface mount packages: SOT-666 (original), SOT-563 (BC847BPDXV6T1G, BC847BVN-7, NST3946DXV6T1G, SBC847BPDXV6T1G), and SOT-23-3 (BC847BLT1G). Package selection depends on PCB layout constraints and pin configuration requirements. SOT-563 and SOT-23-3 packages are more compact than SOT-666.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (BC847BPDXV6T1G, BC847BLT1G, BC847BVN-7, NST3946DXV6T1G, SBC847BPDXV6T1G) are RoHS3 compliant, matching the original BC847BVN,115 compliance status.

Q: What is the operating temperature range difference between BC847BVN,115 and its substitutes?

A: BC847BVN,115 specifies a maximum junction temperature of 150°C without a minimum. All active substitute parts provide extended operating temperature ranges: BC847BPDXV6T1G, BC847BLT1G, NST3946DXV6T1G, and SBC847BPDXV6T1G all specify -55°C to 150°C. BC847BVN-7 extends to -65°C to 150°C. These extended ranges provide improved low-temperature performance.

Q: Can BC847BVN-7 be used in high-power applications?

A: BC847BVN-7 has a maximum power dissipation rating of 150mW, which is 50% lower than the original BC847BVN,115 (300mW). Applications requiring sustained power dissipation above 150mW should not use BC847BVN-7. Alternative substitutes with higher power ratings (BC847BPDXV6T1G at 357mW or NST3946DXV6T1G at 500mW) are more suitable for high-power applications.

Q: What is the significance of transition frequency differences among substitute parts?

A: BC847BVN,115 specifies 100MHz transition frequency. BC847BVN-7 and NST3946DXV6T1G offer enhanced transition frequencies (300MHz and 200MHz, or 300MHz and 250MHz respectively). Higher transition frequencies enable faster switching and improved high-frequency performance. Applications operating at or near 100MHz may benefit from these enhanced specifications, though circuit-level evaluation is required to confirm performance improvements.