BC847BS Equivalent & Substitute Parts

Part Overview

The BC847BS is a dual NPN bipolar junction transistor (BJT) manufactured by onsemi in a 6-TSSOP/SC-88/SOT-363 surface mount package. This component is rated for 45V collector-emitter breakdown voltage with a maximum collector current of 100mA and 210mW power dissipation. The BC847BS is classified as an obsolete product, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts maintain functional compatibility while offering active product status and enhanced electrical characteristics.

Key Parameters

Parameter	BC847BS (Main Part)	Unit
Transistor Type	2 NPN (Dual)	—
Current - Collector (Ic) Max	100	mA
Voltage - Collector Emitter Breakdown (Max)	45	V
Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA	mV
DC Current Gain (hFE) Min @ Ic, Vce	200 @ 2mA, 5V	—
Power - Max	210	mW
Operating Temperature Range	-55 to 150	°C
Package / Case	6-TSSOP, SC-88, SOT-363	—
Mounting Type	Surface Mount	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the BC847BS is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Transistor configuration: 2 NPN (Dual) array
Collector-emitter breakdown voltage: 45V minimum
Maximum collector current: 100mA minimum
DC current gain (hFE): 200 minimum @ 2mA, 5V
Operating temperature range: -55°C to 150°C
Package compatibility: 6-TSSOP/SC-88/SOT-363 surface mount

Allowable Variations:

Vce saturation may be lower (improved performance)
Power dissipation may be higher (improved thermal capability)
Transition frequency may be higher (improved speed)
RoHS3 compliance and active product status are preferred

Substitute parts are grouped into two categories: direct electrical equivalents with identical or superior specifications, and functional alternatives with enhanced performance characteristics that maintain backward compatibility within the specified parameter envelope.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce(br) V	Vce Sat mV	hFE Min	Power mW	Freq MHz	Status	Package
BC847BS	onsemi	100	45	650	200	210	—	Obsolete	SC-88
BC847BDW1T1G	onsemi	100	45	600	200	380	100	Active	SC-88/SC70-6
BC847CDW1T1G	onsemi	100	45	600	420	380	100	Active	SC-88/SC70-6
MBT3904DW1T1G	onsemi	200	40	300	100	150	300	Active	SC-88/SC70-6
NSVBC847BDW1T2G	onsemi	100	45	600	200	380	100	Active	SC-88/SC70-6
SBC847BDW1T1G	onsemi	100	45	600	200	380	100	Active	SC-88/SC70-6
SBC847CDW1T1G	onsemi	100	45	600	420	380	100	Active	SC-88/SC70-6
BC847BS-TP	Micro Commercial Co	100	45	650	110	300	200	Active	SOT-363
BC847BS_R1_00001	Panjit International Inc.	100	45	600	200	300	100	Active	SOT-363
BCM847BS,115	Nexperia USA Inc.	100	45	400	200	300	250	Active	6-TSSOP

Engineering Selection Recommendations

Primary Substitutes (Direct Equivalents):

BC847BDW1T1G, NSVBC847BDW1T2G, and SBC847BDW1T1G are direct functional equivalents manufactured by onsemi. These parts maintain identical electrical specifications to the BC847BS while offering active product status, improved power dissipation (380mW vs. 210mW), and RoHS3 compliance. The SBC847BDW1T1G and SBC847CDW1T1G variants include automotive-grade qualification (AEC-Q101), suitable for applications requiring automotive reliability standards.

Secondary Substitutes (Enhanced Performance):

BC847CDW1T1G and SBC847CDW1T1G provide higher DC current gain (hFE = 420 vs. 200), maintaining all other critical parameters. These variants are appropriate for applications where improved gain characteristics provide design margin.

Alternative Substitute (Different Manufacturer):

BC847BS_R1_00001 (Panjit International Inc.) and BC847BS-TP (Micro Commercial Co) provide functional equivalence with active product status. BC847BS-TP offers higher transition frequency (200MHz) and improved power dissipation (300mW), though with lower minimum hFE (110). BCM847BS,115 (Nexperia USA Inc.) is a matched-pair variant with automotive qualification (AEC-Q100) and superior Vce saturation (400mV), suitable for precision applications.

Not Recommended as Direct Substitute:

MBT3904DW1T1G exhibits reduced collector-emitter breakdown voltage (40V vs. 45V) and lower power dissipation (150mW vs. 210mW), making it unsuitable for applications requiring the full 45V rating or higher power handling.

Frequently Asked Questions (FAQ)

Q: Can BC847BDW1T1G directly replace BC847BS in existing designs?

A: Yes. BC847BDW1T1G maintains identical electrical specifications for collector current (100mA), breakdown voltage (45V), and DC current gain (200 minimum). The improved power dissipation (380mW vs. 210mW) and active product status make it a direct replacement. Package compatibility (SC-88/SC70-6/SOT-363) is maintained.

Q: What is the difference between BC847BDW1T1G and BC847CDW1T1G?

A: Both parts are electrically identical except for DC current gain. BC847CDW1T1G specifies hFE minimum of 420 @ 2mA, 5V, compared to 200 for BC847BDW1T1G. Both maintain 45V breakdown voltage, 100mA collector current, and 380mW power dissipation. Selection depends on gain requirements for the specific application.

Q: Are automotive-qualified variants available?

A: Yes. SBC847BDW1T1G and SBC847CDW1T1G are AEC-Q101 qualified. BCM847BS,115 is AEC-Q100 qualified. These variants are suitable for automotive applications requiring formal qualification documentation.

Q: Does package type affect substitution?

A: Package type must match application requirements. BC847BS specifies SC-88 (SC-70-6) package. Substitute parts are available in SC-88/SC70-6/SOT-363 variants. Verify PCB layout compatibility before selection. All variants are 6-pin surface mount packages with identical pinout.

Q: Why is MBT3904DW1T1G not recommended as a substitute?

A: MBT3904DW1T1G has reduced collector-emitter breakdown voltage (40V vs. 45V) and lower power dissipation (150mW vs. 210mW). Applications requiring the full 45V rating or higher power handling cannot use this part. However, it is suitable for applications with lower voltage requirements (40V maximum).

Q: What is the significance of the "matched pair" designation in BCM847BS,115?

A: BCM847BS,115 is a matched-pair variant, meaning both transistors within the dual package have tightly controlled electrical characteristics. This is beneficial for precision analog applications requiring matched gain and offset voltage. Standard BC847 variants do not guarantee matching between the two transistors.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are RoHS3 compliant. The obsolete BC847BS does not specify RoHS status. All active substitutes meet current environmental compliance requirements.

Q: Can I use BC847BS-TP (Micro Commercial Co) as a substitute?

A: BC847BS-TP is functionally compatible with identical 45V breakdown voltage and 100mA collector current. However, it specifies lower minimum hFE (110 vs. 200) and is available only in SOT-363 package. Verify that the lower gain specification and package variant are acceptable for the application before selection.

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