BC847B Equivalent & Substitute Parts

Part Overview

The BC847B is an NPN bipolar junction transistor (BJT) manufactured by Taiwan Semiconductor Corporation in SOT-23 surface mount packaging. This device is rated for 45V collector-emitter breakdown voltage, 100mA maximum collector current, and 200mW power dissipation with a 100MHz transition frequency. The part is classified as Active product status with full RoHS3 compliance and REACH unaffected designation. Equivalent and substitute parts are identified to address inventory availability, alternative sourcing requirements, packaging preferences, or performance enhancements within specified electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Collector Current (Ic) Maximum	100	mA
Collector-Emitter Breakdown Voltage (Vceo)	45	V
Vce Saturation @ Ib, Ic	500mV @ 5mA, 100mA	—
Collector Cutoff Current (Icbo)	100	nA
DC Current Gain (hFE) @ Ic, Vce	200 @ 2mA, 5V	—
Power Dissipation Maximum	200	mW
Transition Frequency (fT)	100	MHz
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-236-3, SC-59, SOT-23-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the BC847B are classified into three categories based on electrical and mechanical compatibility:

Parametric Equivalent: Parts with identical or equivalent electrical specifications, collector-emitter breakdown voltage (45V), collector current (100mA), power dissipation (200mW nominal), and transition frequency (100MHz). These parts maintain the same base product number BC847 or BC847B designation and differ only in packaging format (Tape & Reel versus Cut Tape) or manufacturer source.

Upgrade Parts: Parts with enhanced electrical performance specifications including higher collector-emitter breakdown voltage (50V), increased power dissipation (250mW or higher), or higher transition frequency (200MHz or greater). These parts are suitable for applications requiring improved performance margins while maintaining compatibility with the same package footprint and mounting type.

Similar Parts: Parts with the same transistor type (NPN), comparable collector current (100mA), similar collector-emitter breakdown voltage (45V or 50V), and surface mount SOT-23 or TO-236 packaging. These parts may have variations in power dissipation, transition frequency, DC current gain, or saturation voltage characteristics but remain functionally compatible within the same application class.

Key Parameters for Substitution:

Transistor Type: NPN
Collector Current (Ic) Maximum: 100mA
Collector-Emitter Breakdown Voltage: 45V minimum
Package Type: SOT-23, TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
RoHS3 Compliance: Required

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vceo (Max) V	Vce Sat @ Ib,Ic	hFE @ Ic,Vce	Power (Max) mW	fT MHz	Temp Range °C	Package	Packaging Type
BC847B	Taiwan Semiconductor	100	45	500mV @ 5mA, 100mA	200 @ 2mA, 5V	200	100	-55 to 150	SOT-23	Cut Tape
BC847B RFG	Taiwan Semiconductor	100	45	500mV @ 5mA, 100mA	200 @ 2mA, 5V	200	100	-55 to 150	SOT-23	Tape & Reel
NSVMSD601-RT1G	onsemi	100	50	—	—	—	—	—	SC-59-3	Tape & Reel
2PD601ART,215	Nexperia USA Inc.	100	50	250mV @ 10mA, 100mA	210 @ 2mA, 10V	250	100	-40 to 150	TO-236AB	Tape & Reel
BC847,215	Nexperia USA Inc.	100	45	400mV @ 5mA, 100mA	110 @ 2mA, 5V	250	100	-40 to 150	TO-236AB	Cut Tape
BC847B-7-F	Diodes Incorporated	100	45	600mV @ 5mA, 100mA	200 @ 2mA, 5V	300	300	-65 to 150	SOT-23-3	Cut Tape
BC847B-TP	Micro Commercial Co	100	45	500mV @ 5mA, 100mA	200 @ 2mA, 5V	225	100	-55 to 150	SOT-23	Tape & Reel
BC847BLT1G	onsemi	100	45	600mV @ 5mA, 100mA	200 @ 2mA, 5V	300	100	-55 to 150	SOT-23-3	Cut Tape
BC847C,215	Nexperia USA Inc.	100	45	400mV @ 5mA, 100mA	420 @ 2mA, 5V	250	100	-40 to 150	TO-236AB	Cut Tape
BC847CLT1G	onsemi	100	45	600mV @ 5mA, 100mA	420 @ 2mA, 5V	300	100	-55 to 150	SOT-23-3	Cut Tape
BC848BT116	Rohm Semiconductor	100	30	600mV @ 5mA, 100mA	200 @ 2mA, 5V	350	200	-40 to 150	SST3	Cut Tape

Engineering Selection Recommendations

Parametric Equivalent Selection:

BC847B RFG is the direct parametric equivalent to BC847B, differing only in packaging format (Tape & Reel versus Cut Tape). Selection between these two parts depends on assembly process requirements and inventory management practices. Both parts maintain identical electrical specifications and RoHS3 compliance status.

BC847B-TP (Micro Commercial Co) is functionally equivalent with identical electrical specifications and operating temperature range. This part is suitable for direct substitution where Tape & Reel packaging is required and high inventory availability is a priority.

Upgrade Part Selection:

2PD601ART,215 (Nexperia USA Inc.) provides enhanced specifications with 50V collector-emitter breakdown voltage (versus 45V), 250mW power dissipation (versus 200mW), and improved saturation voltage characteristics. This part carries AEC-Q101 automotive qualification and is suitable for applications requiring higher voltage margins. Operating temperature maximum is -40°C to 150°C.

NSVMSD601-RT1G (onsemi) offers 50V collector-emitter breakdown voltage in SC-59-3 package format, providing voltage margin enhancement for the same collector current and mounting type.

Similar Part Selection:

BC847B-7-F (Diodes Incorporated) provides enhanced performance with 300MHz transition frequency (versus 100MHz), 300mW power dissipation (versus 200mW), and extended operating temperature range (-65°C to 150°C). This part is suitable for high-frequency applications requiring improved performance margins.

BC847BLT1G and BC847CLT1G (onsemi) offer 300mW power dissipation and improved saturation voltage characteristics while maintaining 100MHz transition frequency and -55°C to 150°C operating range. BC847CLT1G provides higher DC current gain (420 versus 200), suitable for applications requiring enhanced current amplification.

BC847,215 and BC847C,215 (Nexperia USA Inc.) provide 250mW power dissipation and AEC-Q101 automotive qualification. BC847C,215 offers higher DC current gain (420 versus 110), suitable for low-current amplification applications.

BC848BT116 (Rohm Semiconductor) has reduced collector-emitter breakdown voltage (30V versus 45V) and is suitable only for applications with lower voltage requirements. This part is not recommended as a direct substitute for 45V-rated applications.

All substitute parts maintain RoHS3 compliance and REACH unaffected status. Product status is Active for all listed parts.

Frequently Asked Questions (FAQ)

Q: Can BC847B RFG be used as a direct replacement for BC847B?

A: Yes. BC847B RFG is a parametric equivalent with identical electrical specifications. The only difference is packaging format: BC847B RFG is supplied in Tape & Reel format while the original BC847B is supplied in Cut Tape format. Both parts are suitable for direct substitution in the same circuit application.

Q: What is the difference between BC847B and BC847B-7-F?

A: BC847B-7-F (Diodes Incorporated) offers enhanced performance specifications: 300MHz transition frequency (versus 100MHz), 300mW power dissipation (versus 200mW), and extended operating temperature range (-65°C to 150°C versus -55°C to 150°C). The collector-emitter breakdown voltage (45V) and collector current (100mA) remain identical. BC847B-7-F is suitable for high-frequency applications requiring improved performance margins.

Q: Can BC848BT116 replace BC847B?

A: BC848BT116 is not recommended as a direct substitute. While both parts share the same collector current (100mA) and similar package footprint, BC848BT116 has a reduced collector-emitter breakdown voltage of 30V compared to BC847B's 45V. This voltage reduction makes BC848BT116 unsuitable for applications designed for 45V operation.

Q: What are the advantages of using 2PD601ART,215 instead of BC847B?

A: 2PD601ART,215 provides three key enhancements: (1) higher collector-emitter breakdown voltage of 50V (versus 45V), providing improved voltage margin; (2) increased power dissipation rating of 250mW (versus 200mW); (3) AEC-Q101 automotive qualification for applications requiring automotive-grade components. The collector current (100mA) and transition frequency (100MHz) remain equivalent.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts maintain RoHS3 compliance status. REACH status is unaffected for all parts listed.

Q: What is the difference between BC847BLT1G and BC847CLT1G?

A: Both parts are manufactured by onsemi in SOT-23-3 package with identical electrical specifications except for DC current gain: BC847BLT1G has minimum hFE of 200 @ 2mA, 5V, while BC847CLT1G has minimum hFE of 420 @ 2mA, 5V. BC847CLT1G is suitable for applications requiring higher current amplification with lower base drive requirements.

Q: Can BC847,215 (Nexperia) be used in place of BC847B?

A: BC847,215 is functionally compatible with identical collector-emitter breakdown voltage (45V) and collector current (100mA). However, it has lower DC current gain (110 versus 200) and different saturation voltage characteristics (400mV versus 500mV @ 5mA, 100mA). BC847,215 is suitable for substitution in applications where these parameter variations are acceptable. This part carries AEC-Q101 automotive qualification.

Q: What packaging options are available for BC847B equivalents?

A: Equivalent parts are available in three packaging formats: (1) SOT-23 / SOT-23-3 (standard surface mount); (2) TO-236AB (alternative surface mount designation); (3) SST3 (Rohm variant). All maintain the same TO-236-3 / SC-59 footprint compatibility. Packaging format selection depends on assembly equipment and inventory management requirements.

Q: Is BC847B-TP suitable for high-volume production?

A: Yes. BC847B-TP (Micro Commercial Co) is supplied in Tape & Reel format with inventory availability of 1,000,100 pieces, making it suitable for high-volume production requirements. Electrical specifications are identical to BC847B, with 225mW power dissipation (versus 200mW) providing additional margin.

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