BC818-40-TP Equivalent & Substitute Parts

Part Overview

The BC818-40-TP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for interface applications in surface mount configurations. This active product operates at a maximum collector current of 500 mA with a collector-emitter breakdown voltage of 25 V and a maximum power dissipation of 300 mW. The device is packaged in SOT-23 (TO-236-3) surface mount format with a transition frequency of 170 MHz.

Substitute parts are identified when equivalent electrical and mechanical parameters allow direct replacement in circuit applications while maintaining functional performance and physical compatibility.

Substiute Parts

BC818-40-TP

Micro Commercial CoIn Stock: 890BC818-40-TP Datasheet

Current PartRFQ

2SD2114KT146W

Rohm SemiconductorIn Stock: 2343352SD2114KT146W Datasheet

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BC818-40LT1G

onsemiIn Stock: 305188BC818-40LT1G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the BC818-40-TP are qualified based on the following electrical and mechanical parameters:

Critical Matching Parameters:

• Transistor Type: NPN configuration
• Current - Collector (Ic) (Max): 500 mA minimum
• Voltage - Collector Emitter Breakdown (Max): 25 V or greater
• Package / Case: TO-236-3, SC-59, SOT-23-3 surface mount compatibility
• Mounting Type: Surface Mount

Acceptable Variation Parameters:

• Power - Max: Equal to or greater than 225 mW
• Frequency - Transition: Performance-dependent applications
• DC Current Gain (hFE): Minimum 250 @ specified test conditions
• Vce Saturation: Saturation characteristics within application tolerance
• Operating Temperature: -55°C to 150°C range

The substitute parts listed maintain electrical equivalence within the specified parameter ranges and physical compatibility with the original BC818-40-TP footprint.

Parameter Comparison

Engineering Selection Recommendations

BC818-40LT1G (onsemi)

The BC818-40LT1G is a direct equivalent to the BC818-40-TP with identical electrical specifications across all critical parameters. Both devices share the same base product number (BC818), matching collector current (500 mA), collector-emitter breakdown voltage (25 V), saturation voltage characteristics, and operating temperature range (-55°C to 150°C). The BC818-40LT1G is RoHS3 compliant with MSL 1 (Unlimited) rating and maintains active product status. This substitute provides equivalent performance with no electrical or mechanical compromises.

2SD2114KT146W (Rohm Semiconductor)

The 2SD2114KT146W is a functional substitute with the following considerations: The collector-emitter breakdown voltage is rated at 20 V, which is 5 V lower than the BC818-40-TP. This device is suitable for applications where the circuit operates below 20 V. The maximum power dissipation is 200 mW compared to 300 mW in the original part, requiring thermal design verification for high-power applications. The transition frequency is 350 MHz, providing superior high-frequency performance. The DC current gain is significantly higher (1200 @ 10mA, 3V) compared to 250 @ 100mA, 1V. The 2SD2114KT146W is RoHS3 compliant with MSL 1 (Unlimited) rating and maintains active product status. This substitute is applicable in circuits with voltage ratings at or below 20 V and power dissipation at or below 200 mW.

Frequently Asked Questions (FAQ)

Q: Can the BC818-40LT1G replace the BC818-40-TP in all applications?

A: Yes. The BC818-40LT1G maintains identical electrical specifications for collector current (500 mA), collector-emitter breakdown voltage (25 V), saturation voltage, current gain, and operating temperature range. Physical compatibility is confirmed through identical SOT-23 packaging. No circuit modifications are required.

Q: What are the limitations of using the 2SD2114KT146W as a substitute?

A: The 2SD2114KT146W has a maximum collector-emitter breakdown voltage of 20 V, which is 5 V lower than the BC818-40-TP. Applications requiring operation above 20 V are not suitable for this substitute. Additionally, the maximum power dissipation is 200 mW compared to 300 mW, limiting use in high-power applications. The device is suitable only for circuits operating within these reduced specifications.

Q: Are all substitute parts available in the same packaging?

A: Yes. All listed substitute parts use the TO-236-3, SC-59, SOT-23-3 surface mount package format, ensuring physical and mechanical compatibility with the original BC818-40-TP footprint and PCB layout.

Q: What is the difference in DC current gain between the main part and substitutes?

A: The BC818-40-TP and BC818-40LT1G both specify a minimum DC current gain of 250 @ 100mA, 1V. The 2SD2114KT146W specifies a higher minimum gain of 1200 @ 10mA, 3V, measured at different test conditions. Higher current gain may affect biasing circuits designed for the original part's gain characteristics.

Q: Are all parts RoHS compliant?

A: The BC818-40-TP does not specify RoHS status in the provided data. The BC818-40LT1G and 2SD2114KT146W are both RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity ratings.

Q: Which substitute offers the best high-frequency performance?

A: The 2SD2114KT146W provides the highest transition frequency at 350 MHz, compared to 170 MHz for the BC818-40-TP and 100 MHz for the BC818-40LT1G. Selection depends on application frequency requirements.

Q: Can I use the 2SD2114KT146W in a 25 V circuit?

A: No. The 2SD2114KT146W has a maximum collector-emitter breakdown voltage of 20 V. Operation above 20 V risks device failure. The BC818-40LT1G is the appropriate substitute for 25 V circuits.