BC817-40 Equivalent & Substitute Parts

Part Overview

The BC817-40 is an NPN bipolar junction transistor (BJT) manufactured by Diotec Semiconductor in SOT-23-3 surface mount packaging. This device is rated for 45V collector-emitter breakdown voltage, 800mA maximum collector current, and 310mW power dissipation. The BC817-40 is an active product with extensive inventory availability (3,455,400 pieces in stock). Equivalent and substitute parts are identified when applications require alternative sourcing, inventory constraints, or specific compliance certifications while maintaining functional compatibility within defined electrical and mechanical parameters.

Substiute Parts

BC817-40
Diotec SemiconductorIn Stock: 3455486BC817-40 Datasheet
BC817-40
Current Part
BCW66HTA
Diodes IncorporatedIn Stock: 18844BCW66HTA Datasheet
BCW66HTA
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BC817-16 RFG
Taiwan Semiconductor CorporationIn Stock: 7192BC817-16 RFG Datasheet
BC817-16 RFG
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BC817-25 RFG
Taiwan Semiconductor CorporationIn Stock: 86328BC817-25 RFG Datasheet
BC817-25 RFG
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BC817-40 RFG
Taiwan Semiconductor CorporationIn Stock: 5646BC817-40 RFG Datasheet
BC817-40 RFG
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BCW66GLT1G
onsemiIn Stock: 380337BCW66GLT1G Datasheet
BCW66GLT1G
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MMBT2222A RFG
Taiwan Semiconductor CorporationIn Stock: 20964MMBT2222A RFG Datasheet
MMBT2222A RFG
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Key Parameters

Parameter BC817-40 (Main Part)
Manufacturer Diotec Semiconductor
Transistor Type NPN
Collector Current (Max) 800 mA
Collector-Emitter Breakdown Voltage (Max) 45 V
Power Dissipation (Max) 310 mW
Frequency - Transition 100 MHz
Operating Temperature Range -55°C to 150°C
Package / Case SOT-23-3 (TO-236)
Mounting Type Surface Mount
DC Current Gain (hFE) Min @ Ic, Vce 250 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA

Substitute Part Grouping Explanation

Substitute parts for the BC817-40 are classified based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Parameters (Must Match or Exceed):

  • Transistor Type: NPN
  • Package / Case: SOT-23-3 (TO-236) surface mount
  • Collector-Emitter Breakdown Voltage: 45V minimum
  • Collector Current: 800mA minimum
  • Operating Temperature Range: -55°C to 150°C
  • Frequency - Transition: 100MHz minimum

Secondary Parameters (Functional Equivalence):

  • DC Current Gain (hFE): 100 minimum @ specified conditions
  • Vce Saturation: 700mV @ 50mA, 500mA or better
  • Power Dissipation: 300mW minimum

Parts are grouped into two categories:

Direct Equivalents: Parts meeting or exceeding all critical parameters with identical or superior electrical characteristics (BCW66HTA, BCW66GLT1G).

Functional Substitutes: Parts meeting critical parameters but with reduced current rating or modified gain specifications, suitable for applications not requiring full 800mA capability (BC817-16 RFG, BC817-25 RFG, BC817-40 RFG).

Limited Substitutes: Parts with reduced voltage rating or modified frequency response, applicable only to circuits with lower voltage requirements (MMBT2222A RFG).

Parameter Comparison

Parameter BC817-40 BCW66HTA BC817-16 RFG BC817-25 RFG BC817-40 RFG BCW66GLT1G MMBT2222A RFG
Manufacturer Diotec Semiconductor Diodes Incorporated Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor onsemi Taiwan Semiconductor
Transistor Type NPN NPN NPN NPN NPN NPN NPN
Collector Current (Max) 800 mA 800 mA 500 mA 500 mA 500 mA 800 mA 600 mA
Collector-Emitter Breakdown Voltage (Max) 45 V 45 V 45 V 45 V 45 V 45 V 40 V
Power Dissipation (Max) 310 mW 330 mW 300 mW 300 mW 300 mW 300 mW 300 mW
Frequency - Transition 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 300 MHz
DC Current Gain (hFE) Min @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V 100 @ 100mA, 1V 160 @ 100mA, 1V 250 @ 100mA, 1V 160 @ 100mA, 1V 100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 1V @ 50mA, 500mA
Operating Temperature Range -55°C to 150°C -55°C to 150°C -55°C to 150°C -55°C to 150°C -55°C to 150°C -55°C to 150°C -55°C to 150°C
Package / Case SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
RoHS Status Not Applicable ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) Not Applicable 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status Vendor Undefined REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

Direct Equivalent Substitutes:

BCW66HTA (Diodes Incorporated) is a direct equivalent meeting all critical parameters. This part maintains 800mA collector current, 45V breakdown voltage, and 100MHz transition frequency. The BCW66HTA provides superior power dissipation (330mW vs. 310mW) and lower collector cutoff current (20nA vs. 100nA). ROHS3 compliance and REACH unaffected status provide regulatory advantages. Inventory availability is 18,800 pieces.

BCW66GLT1G (onsemi) is a direct equivalent with 800mA collector current and 45V breakdown voltage. This part maintains 100MHz transition frequency and identical saturation characteristics. ROHS3 compliance and MSL 1 rating support high-volume manufacturing. Inventory availability is 380,300 pieces, providing superior supply security.

Functional Substitute with Reduced Current Rating:

BC817-40 RFG (Taiwan Semiconductor Corporation) is a variant of the BC817 series with reduced collector current (500mA vs. 800mA) and power dissipation (300mW vs. 310mW). This part maintains 45V breakdown voltage, 100MHz transition frequency, and identical DC current gain (250 @ 100mA, 1V). ROHS3 compliance and REACH unaffected status are provided. Suitable for applications not requiring full 800mA capability. Inventory availability is 5,598 pieces.

BC817-25 RFG (Taiwan Semiconductor Corporation) provides 500mA collector current with 45V breakdown voltage and 100MHz transition frequency. DC current gain is 160 @ 100mA, 1V. ROHS3 compliance and REACH unaffected status are provided. Inventory availability is 86,300 pieces.

BC817-16 RFG (Taiwan Semiconductor Corporation) provides 500mA collector current with 45V breakdown voltage and 100MHz transition frequency. DC current gain is 100 @ 100mA, 1V. ROHS3 compliance and REACH unaffected status are provided. Inventory availability is 7,087 pieces.

Limited Substitute with Reduced Voltage Rating:

MMBT2222A RFG (Taiwan Semiconductor Corporation) has reduced collector-emitter breakdown voltage (40V vs. 45V) and collector current (600mA vs. 800mA). Transition frequency is elevated to 300MHz. Vce saturation is higher (1V vs. 700mV). This part is applicable only to circuits with maximum operating voltage of 40V. ROHS3 compliance and REACH unaffected status are provided. Inventory availability is 20,864 pieces.

Frequently Asked Questions (FAQ)

Q: Can BCW66HTA replace BC817-40 in all applications?

A: BCW66HTA meets or exceeds all critical electrical parameters of BC817-40. Both devices are NPN transistors in SOT-23-3 packaging with 45V breakdown voltage, 800mA collector current, and 100MHz transition frequency. Pinout compatibility is identical. BCW66HTA is a direct equivalent.

Q: What is the difference between BC817-40 and BC817-40 RFG?

A: BC817-40 RFG has reduced collector current (500mA vs. 800mA) and power dissipation (300mW vs. 310mW). Both maintain 45V breakdown voltage, 100MHz transition frequency, and identical DC current gain (250 @ 100mA, 1V). BC817-40 RFG is suitable for applications not requiring full 800mA capability.

Q: Can MMBT2222A RFG be used as a substitute for BC817-40?

A: MMBT2222A RFG has reduced collector-emitter breakdown voltage (40V vs. 45V) and collector current (600mA vs. 800mA). This part is applicable only to circuits with maximum operating voltage of 40V and current requirements not exceeding 600mA. Vce saturation is also higher (1V vs. 700mV).

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed (BCW66HTA, BC817-16 RFG, BC817-25 RFG, BC817-40 RFG, BCW66GLT1G, MMBT2222A RFG) are ROHS3 compliant. The original BC817-40 has RoHS status listed as not applicable.

Q: What is the significance of MSL 1 (Unlimited) rating?

A: MSL 1 (Unlimited) indicates the component has unlimited shelf life and does not require special moisture control during storage or handling. All substitute parts have MSL 1 rating, supporting standard manufacturing and storage practices.

Q: Which substitute part has the highest inventory availability?

A: BCW66GLT1G (onsemi) has the highest inventory availability at 380,300 pieces, followed by BC817-25 RFG at 86,300 pieces. These parts provide superior supply security for high-volume applications.

Q: Are the package dimensions identical across all substitute parts?

A: All parts use SOT-23-3 (TO-236) surface mount packaging. Package / Case designations are identical, ensuring mechanical compatibility with existing PCB layouts and assembly processes.

Q: What is the primary advantage of BCW66HTA over BC817-40?

A: BCW66HTA provides superior power dissipation (330mW vs. 310mW) and lower collector cutoff current (20nA vs. 100nA). ROHS3 compliance and REACH unaffected status provide regulatory advantages over the original BC817-40.

Q: Can BC817-16 RFG be used in high-current applications?

A: BC817-16 RFG is rated for 500mA maximum collector current, which is 37.5% lower than BC817-40 (800mA). This part is not suitable for applications requiring full 800mA capability. Use BC817-16 RFG only in circuits designed for 500mA or lower collector current.

Q: What is the difference in transition frequency between BC817-40 and MMBT2222A RFG?

A: BC817-40 has 100MHz transition frequency, while MMBT2222A RFG has 300MHz transition frequency. The higher frequency response of MMBT2222A RFG may affect circuit behavior in applications sensitive to frequency characteristics. Verify circuit performance before substitution.

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