BC807-40W Equivalent & Substitute Parts

Part Overview

The BC807-40W is an active PNP bipolar junction transistor manufactured by Taiwan Semiconductor Corporation, designed for surface mount applications in the SOT-323 package. This component operates at collector currents up to 500 mA with a maximum collector-emitter breakdown voltage of 45 V and a transition frequency of 80 MHz. The device is rated for 200 mW maximum power dissipation and operates across a temperature range of -55°C to 150°C. Equivalent and substitute parts are identified based on matching electrical characteristics and mechanical compatibility within the SOT-323/SC-70 package family, ensuring functional interchangeability in circuit designs where the BC807-40W specifications are required.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) Max	500	mA
Voltage - Collector Emitter Breakdown (Max)	45	V
Vce Saturation (Max) @ Ib, Ic	700 mV @ 50 mA, 500 mA	—
Current - Collector Cutoff (Max)	100	µA
DC Current Gain (hFE) Min @ Ic, Vce	250 @ 100 mA, 1 V	—
Power - Max	200	mW
Frequency - Transition	80	MHz
Operating Temperature	-55 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	SOT-323 / SC-70	—
RoHS Status	ROHS3 Compliant	—
Product Status	Active	—

Substitute Part Grouping Explanation

Substitute parts for the BC807-40W are identified based on strict electrical and mechanical parameter matching within the PNP bipolar junction transistor category. The primary substitution criteria are:

Critical Matching Parameters:

Transistor Type: PNP configuration
Current Rating: 500 mA collector current maximum
Voltage Rating: 45 V collector-emitter breakdown voltage (or higher)
Package: SOT-323 or SC-70 surface mount package
Operating Temperature Range: -55°C to 150°C minimum
RoHS Compliance: ROHS3 Compliant

Secondary Compatibility Parameters:

Vce Saturation characteristics at specified bias conditions
DC Current Gain (hFE) minimum specifications
Transition Frequency: 80 MHz or higher
Power Dissipation: 200 mW or higher

Parts meeting all critical parameters are classified as direct substitutes. Variations in secondary parameters (such as higher transition frequency, increased power rating, or enhanced current gain) do not preclude substitution when primary electrical and mechanical specifications are satisfied.

Parameter Comparison

Parameter	BC807-40W (Main)	BC807-25WT1G	BC807W,135	PMSTA55,115	SBC807-25WT1G	SBC807-40WT1G
Manufacturer	Taiwan Semiconductor	onsemi	Nexperia USA Inc.	NXP USA Inc.	onsemi	onsemi
Transistor Type	PNP	PNP	PNP	PNP	PNP	PNP
Ic (Max)	500 mA	500 mA	500 mA	500 mA	500 mA	500 mA
Vce Breakdown (Max)	45 V	45 V	45 V	60 V	45 V	45 V
Vce Saturation @ Ib, Ic	700 mV @ 50 mA, 500 mA	700 mV @ 50 mA, 500 mA	700 mV @ 50 mA, 500 mA	250 mV @ 10 mA, 100 mA	700 mV @ 50 mA, 500 mA	700 mV @ 50 mA, 500 mA
Icbo (Max)	100 µA	100 nA	100 nA	100 nA	100 nA	100 nA
hFE (Min) @ Ic, Vce	250 @ 100 mA, 1 V	160 @ 100 mA, 1 V	100 @ 100 mA, 1 V	100 @ 100 mA, 1 V	160 @ 100 mA, 1 V	250 @ 100 mA, 1 V
Power (Max)	200 mW	460 mW	200 mW	200 mW	460 mW	460 mW
Frequency - Transition	80 MHz	100 MHz	80 MHz	50 MHz	100 MHz	100 MHz
Operating Temperature	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C
Package	SOT-323	SC-70 / SOT-323	SOT-323	SOT-323	SC-70 / SOT-323	SC-70 / SOT-323
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active	Active	Active
Automotive Grade	Not specified	Not specified	AEC-Q101	AEC-Q101	AEC-Q101	AEC-Q101

Engineering Selection Recommendations

Direct Substitutes (Fully Compatible):

The BC807-25WT1G, BC807W,135, SBC807-25WT1G, and SBC807-40WT1G are direct substitutes for the BC807-40W. All parts share identical collector current ratings (500 mA), collector-emitter breakdown voltage (45 V), operating temperature range (-55°C to 150°C), and SOT-323/SC-70 package compatibility. All substitute parts maintain active product status and ROHS3 compliance.

Automotive-Grade Alternatives:

The BC807W,135, PMSTA55,115, SBC807-25WT1G, and SBC807-40WT1G are qualified to AEC-Q101 automotive standards. These parts are suitable for applications requiring automotive-grade certification. The BC807-25WT1G and SBC807-40WT1G from onsemi provide enhanced power dissipation (460 mW versus 200 mW) and higher transition frequency (100 MHz versus 80 MHz) while maintaining full electrical compatibility.

Enhanced Performance Options:

The SBC807-40WT1G offers the closest electrical match to the BC807-40W, with identical DC current gain specifications (250 @ 100 mA, 1 V), enhanced power rating (460 mW), and higher transition frequency (100 MHz). This part is AEC-Q101 qualified and available in tape and reel packaging.

Voltage-Enhanced Alternative:

The PMSTA55,115 provides a higher collector-emitter breakdown voltage rating (60 V versus 45 V), offering additional design margin in applications subject to voltage transients. This part maintains 500 mA collector current rating and 200 mW power dissipation. The PMSTA55,115 is AEC-Q101 qualified and available in bulk packaging.

Frequently Asked Questions (FAQ)

Q: Can BC807-25WT1G replace BC807-40W in all applications?

A: Yes. The BC807-25WT1G meets all critical electrical parameters: 500 mA collector current, 45 V breakdown voltage, SOT-323 package, and -55°C to 150°C operating range. The designation difference (25 versus 40) does not indicate incompatibility; both parts share the same base product number BC807 and are functionally equivalent.

Q: What is the difference between BC807-40W and SBC807-40WT1G?

A: Both parts share identical electrical specifications for collector current (500 mA), breakdown voltage (45 V), and DC current gain (250 @ 100 mA, 1 V). The SBC807-40WT1G offers enhanced power dissipation (460 mW versus 200 mW) and higher transition frequency (100 MHz versus 80 MHz). The SBC807-40WT1G is AEC-Q101 qualified and supplied in tape and reel packaging, whereas the BC807-40W is supplied in standard packaging.

Q: Is PMSTA55,115 a suitable substitute for BC807-40W?

A: PMSTA55,115 is electrically compatible with BC807-40W for collector current (500 mA) and package (SOT-323). However, PMSTA55,115 features a higher collector-emitter breakdown voltage (60 V versus 45 V) and lower transition frequency (50 MHz versus 80 MHz). This part is suitable for applications where higher voltage margin is required and lower frequency operation is acceptable.

Q: Are all substitute parts RoHS compliant?

A: BC807-25WT1G, BC807W,135, SBC807-25WT1G, and SBC807-40WT1G are ROHS3 compliant. PMSTA55,115 RoHS compliance status is not specified in the provided data.

Q: What packaging options are available for substitutes?

A: BC807-25WT1G, SBC807-25WT1G, and SBC807-40WT1G are supplied in tape and reel (TR) packaging. BC807W,135 is supplied in tape and reel packaging. PMSTA55,115 is supplied in bulk packaging. All parts use SOT-323 or SC-70 surface mount packages with identical pin configurations.

Q: Which substitute offers the best performance upgrade?

A: SBC807-40WT1G provides the most direct performance upgrade, matching the BC807-40W DC current gain specification (250 @ 100 mA, 1 V) while offering 2.3× higher power dissipation (460 mW versus 200 mW) and 25% higher transition frequency (100 MHz versus 80 MHz). This part is AEC-Q101 qualified and maintains full electrical compatibility.

Q: Can BC807-40W be used in automotive applications?

A: BC807-40W is not specified as AEC-Q101 qualified. For automotive applications requiring AEC-Q101 certification, use BC807W,135, PMSTA55,115, SBC807-25WT1G, or SBC807-40WT1G as substitutes.

Q: Are there differences in collector cutoff current (Icbo) between parts?

A: Yes. BC807-40W specifies Icbo maximum of 100 µA, while all substitute parts specify 100 nA maximum. The lower Icbo values in substitute parts indicate reduced leakage current, which may improve circuit performance in low-power or high-impedance applications.

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