BC807-40 PNP Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The BC807-40 is an active PNP bipolar junction transistor manufactured by Taiwan Semiconductor Corporation in SOT-23 surface mount packaging. This component operates at collector-emitter breakdown voltage of 45V with maximum collector current of 500mA and transition frequency of 100MHz. The device is rated for 300mW power dissipation across an operating temperature range of -55°C to 150°C. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, manufacturing discontinuation, or design flexibility needs.

Substiute Parts

BC807-40
Taiwan Semiconductor CorporationIn Stock: 1005127BC807-40 Datasheet
BC807-40
Current Part
2PB710ASL,215
Nexperia USA Inc.In Stock: 39032PB710ASL,215 Datasheet
2PB710ASL,215
Similar
50A02CH-TL-E
onsemiIn Stock: 452050A02CH-TL-E Datasheet
50A02CH-TL-E
Similar
BC807-16,215
Nexperia USA Inc.In Stock: 29046BC807-16,215 Datasheet
BC807-16,215
Similar
BC807-25LT1G
onsemiIn Stock: 293480BC807-25LT1G Datasheet
BC807-25LT1G
Similar
BC807-25LT3G
onsemiIn Stock: 305350BC807-25LT3G Datasheet
BC807-25LT3G
Similar
BC807-40Q-7-F
Diodes IncorporatedIn Stock: 35461BC807-40Q-7-F Datasheet
BC807-40Q-7-F
Similar
BCX17T116
Rohm SemiconductorIn Stock: 2163BCX17T116 Datasheet
BCX17T116
Similar
NSVBCX17LT1G
onsemiIn Stock: 1429NSVBCX17LT1G Datasheet
NSVBCX17LT1G
Similar
BC807-40LT1G
onsemiIn Stock: 119478BC807-40LT1G Datasheet
BC807-40LT1G
Parametric Equivalent
BC807-40LT3G
onsemiIn Stock: 95404BC807-40LT3G Datasheet
BC807-40LT3G
Parametric Equivalent
SBC807-40LT1G
onsemiIn Stock: 35334SBC807-40LT1G Datasheet
SBC807-40LT1G
Parametric Equivalent
SBC807-40LT3G
onsemiIn Stock: 4984SBC807-40LT3G Datasheet
SBC807-40LT3G
Parametric Equivalent

Key Parameters

Parameter BC807-40 Specification
Transistor Type PNP
Collector Current (Ic) Max 500 mA
Collector-Emitter Breakdown Voltage (Max) 45 V
Vce Saturation @ Ib, Ic 700mV @ 50mA, 500mA
Collector Cutoff Current (ICBO) 100nA
DC Current Gain (hFE) Min @ Ic, Vce 250 @ 100mA, 1V
Power Dissipation (Max) 300 mW
Transition Frequency 100MHz
Operating Temperature Range -55°C to 150°C
Package Type SOT-23 (TO-236-3, SC-59)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the BC807-40 are classified based on strict electrical and mechanical parameter alignment. The primary substitution criteria are:

Critical Parameters for Substitution:

  • Transistor polarity (PNP type required)
  • Collector current rating (500mA minimum)
  • Collector-emitter breakdown voltage (45V or higher)
  • Vce saturation characteristics (700mV @ 50mA, 500mA)
  • Collector cutoff current (100nA maximum)
  • DC current gain minimum (hFE ≥ 250 @ 100mA, 1V)
  • Power dissipation (300mW or higher)
  • Transition frequency (100MHz or higher)
  • Operating temperature range (-55°C to 150°C minimum)
  • Package compatibility (SOT-23/TO-236-3 surface mount)

Parts are grouped into two categories: Parametric Equivalents (identical electrical specifications and packaging) and Similar Substitutes (compatible electrical performance with minor parameter variations within acceptable operating margins).

Parameter Comparison

Part Number Manufacturer Ic (Max) Vce Breakdown (Max) Vce Sat @ 50mA, 500mA hFE Min @ 100mA, 1V Power (Max) Freq (MHz) Temp Range Package
BC807-40 Taiwan Semiconductor 500 mA 45 V 700mV 250 300 mW 100 -55 to 150°C SOT-23
BC807-40LT1G onsemi 500 mA 45 V 700mV 250 300 mW 100 -55 to 150°C SOT-23-3
BC807-40LT3G onsemi 500 mA 45 V 700mV 250 300 mW 100 -55 to 150°C SOT-23-3
BC807-40Q-7-F Diodes Incorporated 500 mA 45 V 700mV 250 310 mW 100 -55 to 150°C SOT-23-3
BC807-25LT1G onsemi 500 mA 45 V 700mV 160 300 mW 100 -55 to 150°C SOT-23-3
BC807-25LT3G onsemi 500 mA 45 V 700mV 160 300 mW 100 -55 to 150°C SOT-23-3
BC807-16,215 Nexperia USA Inc. 500 mA 45 V 700mV 100 250 mW 80 -55 to 150°C TO-236AB
2PB710ASL,215 Nexperia USA Inc. 500 mA 50 V 600mV @ 30mA, 300mA 170 250 mW 140 -55 to 150°C TO-236AB
50A02CH-TL-E onsemi 500 mA 50 V 120mV @ 10mA, 100mA 200 700 mW 690 -55 to 150°C 3-CPH
BCX17T116 Rohm Semiconductor 500 mA 45 V 620mV @ 50mA, 500mA 100 425 mW 200 -55 to 150°C SST3
NSVBCX17LT1G onsemi 500 mA 45 V 620mV @ 50mA, 500mA 100 225 mW Not Specified -55 to 150°C SOT-23-3

Engineering Selection Recommendations

Parametric Equivalents (Direct Substitution):

BC807-40LT1G and BC807-40LT3G manufactured by onsemi are parametric equivalents with identical electrical specifications to the BC807-40. Both parts maintain 500mA collector current, 45V breakdown voltage, 700mV saturation voltage, 250 minimum hFE, 300mW power rating, and 100MHz transition frequency across the -55°C to 150°C operating range. These parts are packaged in SOT-23-3 (TO-236) surface mount configuration and are ROHS3 compliant with unlimited moisture sensitivity level (MSL 1).

BC807-40Q-7-F manufactured by Diodes Incorporated is an automotive-grade equivalent (AEC-Q101 qualified) with identical electrical parameters and 310mW power rating. This part is suitable for applications requiring automotive qualification.

Compatible Substitutes with Parameter Variations:

BC807-25LT1G and BC807-25LT3G (onsemi) maintain electrical compatibility with reduced DC current gain (160 minimum hFE vs. 250). These parts are suitable for applications where lower current gain is acceptable.

BC807-16,215 (Nexperia USA Inc.) is an automotive-grade part (AEC-Q101 qualified) with matching saturation voltage and 45V breakdown voltage but reduced transition frequency (80MHz vs. 100MHz) and lower power rating (250mW vs. 300mW).

2PB710ASL,215 (Nexperia USA Inc.) is an automotive-grade part with 50V breakdown voltage (higher margin), 140MHz transition frequency, and reduced saturation voltage (600mV). Power rating is 250mW. This part is suitable for applications requiring higher voltage margin.

50A02CH-TL-E (onsemi) offers significantly higher transition frequency (690MHz) and power dissipation (700mW) with 50V breakdown voltage. Saturation voltage is substantially lower (120mV). This part is suitable for high-frequency applications.

BCX17T116 (Rohm Semiconductor) provides 200MHz transition frequency and 425mW power rating with 45V breakdown voltage and reduced saturation voltage (620mV). This part is suitable for moderate-frequency applications requiring higher power capability.

NSVBCX17LT1G (onsemi) is an automotive-grade part (AEC-Q101 qualified) with 45V breakdown voltage and reduced power rating (225mW). Transition frequency is not specified.

Frequently Asked Questions (FAQ)

Q: Can BC807-40LT1G and BC807-40LT3G be used interchangeably with BC807-40?

A: Yes. Both onsemi parts are parametric equivalents with identical electrical specifications including 500mA collector current, 45V breakdown voltage, 700mV saturation voltage, 250 minimum hFE, 300mW power rating, and 100MHz transition frequency. Operating temperature range and package type (SOT-23-3) are compatible.

Q: What is the difference between BC807-25LT1G and BC807-40LT1G?

A: The primary difference is DC current gain. BC807-40LT1G has minimum hFE of 250 at 100mA and 1V, while BC807-25LT1G has minimum hFE of 160 at the same conditions. All other electrical parameters including collector current, breakdown voltage, saturation voltage, power rating, and transition frequency are identical. The suffix "-25" and "-40" refer to the hFE gain classification.

Q: Is BC807-40Q-7-F suitable for automotive applications?

A: Yes. BC807-40Q-7-F is AEC-Q101 qualified and manufactured by Diodes Incorporated. It maintains identical electrical specifications to BC807-40 with 310mW power rating and is suitable for automotive-grade applications.

Q: Can 2PB710ASL,215 replace BC807-40 in all applications?

A: 2PB710ASL,215 is compatible for most applications but has parameter differences. It provides higher breakdown voltage (50V vs. 45V), higher transition frequency (140MHz vs. 100MHz), and lower saturation voltage (600mV vs. 700mV). However, power rating is reduced to 250mW and DC current gain is lower (170 vs. 250). Verify saturation voltage and power dissipation requirements before substitution.

Q: What is the advantage of 50A02CH-TL-E over BC807-40?

A: 50A02CH-TL-E offers significantly higher transition frequency (690MHz vs. 100MHz) and power dissipation capability (700mW vs. 300mW). Saturation voltage is substantially lower (120mV vs. 700mV). This part is suitable for high-frequency switching applications requiring lower saturation losses. However, the package type is 3-CPH rather than SOT-23, requiring PCB layout modification.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts are ROHS3 compliant. Moisture sensitivity level (MSL) is 1 (Unlimited) for all parts except where not specified.

Q: Can NSVBCX17LT1G be used in place of BC807-40?

A: NSVBCX17LT1G is compatible for applications where reduced power dissipation (225mW vs. 300mW) is acceptable. It is AEC-Q101 qualified for automotive applications. Saturation voltage is lower (620mV vs. 700mV). Transition frequency is not specified in the datasheet. Verify power budget and frequency requirements before substitution.

Q: What packaging considerations apply to these substitutes?

A: BC807-40 is packaged in SOT-23. Most substitutes use SOT-23-3 (TO-236AB) or equivalent packages with identical pin configuration and footprint compatibility. Exception: 50A02CH-TL-E uses 3-CPH package, which requires PCB layout verification. BCX17T116 uses SST3 package. Verify package footprint compatibility with PCB design before component selection.

Q: Which substitute offers the best high-frequency performance?

A: 50A02CH-TL-E provides the highest transition frequency at 690MHz, followed by 2PB710ASL,215 at 140MHz and BCX17T116 at 200MHz. BC807-40 and most other substitutes operate at 100MHz. Select based on specific frequency requirements and package compatibility.

Request Quote (Ships tomorrow)