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BC637_D26Z Equivalent & Substitute Parts
Part Overview
The BC637_D26Z is an NPN bipolar junction transistor manufactured by onsemi, rated for 60 V collector-emitter breakdown voltage and 1 A maximum collector current. This device is packaged in a TO-92-3 through-hole configuration and is designed for general-purpose switching and amplification applications with a maximum power dissipation of 1 W.
The BC637_D26Z is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or repair requirements for systems utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Voltage - Collector Emitter Breakdown (Max) | 60 | V |
| Current - Collector (Ic) (Max) | 1 | A |
| Power - Max | 1 | W |
| Frequency - Transition | 100 | MHz |
| Operating Temperature (TJ) | 150 | °C |
| Mounting Type | Through Hole | — |
| Package / Case | TO-92-3 | — |
Substitute Part Grouping Explanation
Substitution of the BC637_D26Z requires evaluation against the following critical parameters:
Electrical Compatibility Criteria:
- Transistor type must be NPN
- Collector-emitter breakdown voltage must be greater than or equal to 60 V
- Maximum collector current must be greater than or equal to 1 A
- Maximum power dissipation must be greater than or equal to 1 W
- Operating temperature range must support 150°C junction temperature
Mechanical Compatibility Criteria:
- Mounting type must be through-hole
- Package footprint must be compatible with TO-92-3 or equivalent three-pin through-hole configurations
The 2SD2227STPV does not meet the electrical requirements for direct substitution. This device has a maximum collector current of 150 mA (versus 1 A required) and maximum power dissipation of 300 mW (versus 1 W required). Additionally, the collector-emitter breakdown voltage is rated at 50 V, which is below the 60 V specification of the BC637_D26Z. These limitations restrict its application to lower-current circuits and prevent its use in designs requiring the full electrical performance envelope of the original part.
Parameter Comparison
| Parameter | BC637_D26Z (onsemi) | 2SD2227STPV (Rohm Semiconductor) | Unit |
|---|---|---|---|
| Transistor Type | NPN | NPN | — |
| Voltage - Collector Emitter Breakdown (Max) | 60 | 50 | V |
| Current - Collector (Ic) (Max) | 1000 | 150 | mA |
| Power - Max | 1 | 0.3 | W |
| Operating Temperature (TJ) | 150 | 150 | °C |
| Mounting Type | Through Hole | Through Hole | — |
| Product Status | Obsolete | Active | — |
Engineering Selection Recommendations
The BC637_D26Z is an obsolete component with 1055 units currently in stock. The 2SD2227STPV is an active product manufactured by Rohm Semiconductor with 985 units available.
From a compliance perspective, both devices are REACH Unaffected. The 2SD2227STPV carries RoHS3 compliance certification, whereas the BC637_D26Z does not specify RoHS status.
Substitution Feasibility: The 2SD2227STPV is not a direct electrical substitute for the BC637_D26Z due to reduced maximum collector current (150 mA versus 1 A), reduced maximum power dissipation (300 mW versus 1 W), and lower collector-emitter breakdown voltage (50 V versus 60 V). This part is suitable only for applications where circuit requirements fall within its electrical envelope.
For designs requiring the full specifications of the BC637_D26Z, alternative NPN transistors with equivalent or superior ratings in all critical parameters must be evaluated. The obsolete status of the BC637_D26Z necessitates long-term supply planning or design migration strategies.
Frequently Asked Questions (FAQ)
Q: Can the 2SD2227STPV directly replace the BC637_D26Z in all applications?
A: No. The 2SD2227STPV has lower maximum collector current (150 mA versus 1 A), lower power dissipation capability (300 mW versus 1 W), and lower breakdown voltage (50 V versus 60 V). It is suitable only for circuits designed within these reduced specifications.
Q: What is the primary reason the BC637_D26Z requires substitution?
A: The BC637_D26Z is classified as obsolete. Long-term availability cannot be assured, making substitution necessary for ongoing production and support.
Q: Are the packages compatible between BC637_D26Z and 2SD2227STPV?
A: Both devices use through-hole mounting with three-pin configurations. The BC637_D26Z uses TO-92-3 packaging, while the 2SD2227STPV uses SC-72 Formed Leads packaging. Physical footprints differ and must be verified for board-level compatibility.
Q: What compliance certifications apply to each part?
A: Both parts are REACH Unaffected. The 2SD2227STPV is RoHS3 Compliant. The BC637_D26Z does not specify RoHS compliance status.
Q: If the 2SD2227STPV cannot substitute, what selection criteria should guide alternative part identification?
A: Replacement parts must maintain NPN transistor type, support minimum 60 V collector-emitter breakdown voltage, support minimum 1 A collector current, support minimum 1 W power dissipation, and maintain through-hole mounting compatibility with the original circuit board layout.
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