BC635_D26Z Equivalent & Substitute Parts

Part Overview

The BC635_D26Z is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 1 A, collector-emitter breakdown voltage of 45 V, and a maximum power dissipation of 1 W in a Through Hole TO-92-3 package. The BC635_D26Z is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

BC635_D26Z
onsemiIn Stock: 971BC635_D26Z Datasheet
BC635_D26Z
Current Part
2SD2227STPV
Rohm SemiconductorIn Stock: 10532SD2227STPV Datasheet
2SD2227STPV
Similar

Key Parameters

Parameter BC635_D26Z
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V
Power - Max 1 W
Frequency - Transition 100MHz
Operating Temperature (TJ) 150°C
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the BC635_D26Z requires evaluation against the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Transistor Type: Must be NPN
  • Collector Current (Ic) Rating: Substitute must support the application's maximum current requirement, which does not exceed 1 A for the BC635_D26Z
  • Collector-Emitter Breakdown Voltage (VCEO): Substitute must equal or exceed 45 V
  • Power Dissipation: Substitute must support the thermal requirements of the application
  • DC Current Gain (hFE): Substitute must provide sufficient gain for the intended circuit function
  • Operating Temperature Range: Substitute must support operation at 150°C (TJ)

Mechanical Compatibility Criteria:

  • Mounting Type: Through Hole configuration required
  • Package Compatibility: Physical dimensions and pin configuration must accommodate existing PCB layouts

The 2SD2227STPV from Rohm Semiconductor is evaluated as a potential substitute based on these parameters. However, critical differences exist in maximum collector current (150 mA versus 1 A) and power dissipation (300 mW versus 1 W), which restrict its application scope to lower-current circuits.

Parameter Comparison

Parameter BC635_D26Z (onsemi) 2SD2227STPV (Rohm Semiconductor) Compatibility Notes
Transistor Type NPN NPN Match
Current - Collector (Ic) (Max) 1 A 150 mA 2SD2227STPV rated lower; suitable for reduced-current applications only
Voltage - Collector Emitter Breakdown (Max) 45 V 50 V 2SD2227STPV exceeds requirement
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 800mV @ 200mA, 2A Different test conditions; direct comparison not applicable
Current - Collector Cutoff (Max) 100nA (ICBO) 300nA 2SD2227STPV exhibits higher leakage current
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 120 @ 500mA, 3V Different test conditions; 2SD2227STPV demonstrates higher gain at specified point
Power - Max 1 W 300 mW 2SD2227STPV rated lower; thermal constraints apply
Operating Temperature (TJ) 150°C 150°C Match
Mounting Type Through Hole Through Hole Match
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads SC-72 Formed Leads Different package; physical layout verification required
Product Status Obsolete Active 2SD2227STPV actively manufactured and supported

Engineering Selection Recommendations

BC635_D26Z Status: The BC635_D26Z is classified as obsolete. While 918 pieces remain in stock, long-term availability cannot be assured. For new designs or production continuity planning, alternative components should be evaluated.

2SD2227STPV Evaluation: The 2SD2227STPV is an active product manufactured by Rohm Semiconductor and carries ROHS3 compliance certification. This device is suitable for applications where collector current does not exceed 150 mA and power dissipation remains below 300 mW. The higher collector-emitter breakdown voltage (50 V) provides margin above the BC635_D26Z specification of 45 V.

Application-Specific Considerations: Substitution of the 2SD2227STPV for the BC635_D26Z is valid only when circuit design parameters align with the reduced current and power ratings of the substitute. Circuits requiring the full 1 A collector current capability or 1 W power dissipation of the BC635_D26Z cannot use the 2SD2227STPV without circuit redesign. Package differences (TO-92-3 versus SC-72) require physical layout verification before implementation.

Frequently Asked Questions (FAQ)

Q: Can the 2SD2227STPV directly replace the BC635_D26Z in all applications?

A: No. The 2SD2227STPV has a maximum collector current of 150 mA and maximum power dissipation of 300 mW, compared to the BC635_D26Z ratings of 1 A and 1 W respectively. Direct substitution is limited to applications where circuit current and power requirements do not exceed the 2SD2227STPV specifications.

Q: What are the key electrical differences between these devices?

A: The primary differences are collector current rating (1 A versus 150 mA), power dissipation (1 W versus 300 mW), and collector cutoff current (100 nA versus 300 nA). The 2SD2227STPV provides higher collector-emitter breakdown voltage (50 V versus 45 V) and higher DC current gain at its specified test point.

Q: Are the packages physically compatible?

A: No. The BC635_D26Z uses a TO-92-3 (TO-226AA) package, while the 2SD2227STPV uses an SC-72 package. Although both are Through Hole configurations, physical dimensions and pin spacing differ. PCB layout verification is required before substitution.

Q: What is the compliance status of the 2SD2227STPV?

A: The 2SD2227STPV is ROHS3 compliant and REACH unaffected. Both devices carry REACH unaffected status.

Q: Why is the BC635_D26Z classified as obsolete?

A: The BC635_D26Z is no longer in active production by onsemi. Although inventory remains available, long-term supply cannot be guaranteed. For designs requiring extended production runs or long-term support, active alternatives should be selected.

Q: How should I verify compatibility before implementing a substitute?

A: Compare the maximum collector current, power dissipation, and voltage requirements of your specific circuit against the substitute device ratings. Verify that all electrical parameters of the substitute meet or exceed the application requirements. Confirm physical package compatibility with existing PCB layouts.

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