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Equivalent & Substitute Parts Reference for BC557C,126 (NXP USA Inc.)
Part Overview
The BC557C,126 from NXP USA Inc. is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in TO-92-3 packages. It features a maximum collector-emitter voltage of 45 V, a collector current of 100 mA, and a transition frequency of 100 MHz. The device supports power dissipation of up to 500 mW and is compliant with RoHS3 and REACH requirements. This part is classified as obsolete, making it necessary to identify substitute or equivalent transistors for ongoing designs and maintenance involving BJTs in similar electrical and mechanical configurations.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Current - Collector (Ic) (Max) | 100 mA |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Power - Max | 500 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| RoHS Status | ROHS3 Compliant |
| REACH Status | REACH Unaffected |
| Part Status | Obsolete |
Substitute Part Grouping Explanation
Substitute selection for transistors in the BJTs, PNP category is based strictly on matching the following key electrical and mechanical parameters: transistor type, collector-emitter breakdown voltage, collector current rating, collector-emitter saturation voltage, cutoff current, DC current gain, power dissipation, transition frequency, operating temperature range, mounting type, and package/case compatibility. Substitution validity is narrowly restricted to parts matching these fields as explicitly provided.
Parameter Comparison
| Manufacturer Part Number | Transistor Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Vce Saturation (Max) | DC Current Gain (hFE) (Min) | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | RoHS Status | REACH Status | Part Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BC557C,126 | PNP | 45 V | 100 mA | 650mV @ 5mA, 100mA | 420 @ 2mA, 5V | 500 mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 | ROHS3 Compliant | REACH Unaffected | Obsolete |
| 2N3906TA | PNP | 40 V | 200 mA | 400mV @ 5mA, 50mA | 100 @ 10mA, 1V | 625 mW | 250MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 | ROHS3 Compliant | REACH Unaffected | Active |
| 2N3906TAR | PNP | 40 V | 200 mA | 400mV @ 5mA, 50mA | 100 @ 10mA, 1V | 625 mW | 250MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 | ROHS3 Compliant | REACH Unaffected | Active |
| BC557BTF | PNP | 45 V | 100 mA | 650mV @ 5mA, 100mA | 200 @ 2mA, 5V | 500 mW | 150MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 | ROHS3 Compliant | REACH Unaffected | Active |
| BC557BTA | PNP | 45 V | 100 mA | 650mV @ 5mA, 100mA | 200 @ 2mA, 5V | 500 mW | 150MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 | ROHS3 Compliant | REACH Unaffected | Active |
| 2N4403TA | PNP | 40 V | 600 mA | 750mV @ 50mA, 500mA | 100 @ 150mA, 2V | 625 mW | 200MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 | ROHS3 Compliant | REACH Unaffected | Active |
| BC557ATA | PNP | 45 V | 100 mA | 650mV @ 5mA, 100mA | 110 @ 2mA, 5V | 500 mW | 150MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 | - | - | Active |
Engineering Selection Recommendations
Selection of substitute transistors for BC557C,126 should exclusively consider alternatives with matching or higher compliance and certification standards, including ROHS3 and REACH unaffected status. The original part is discontinued (obsolete). Substitute components listed with an "Active" part status and equivalent certification are suitable for direct use in legacy or new designs requiring transistors within the BJTs, PNP category and TO-92-3 mechanical format.
Frequently Asked Questions (FAQ)
Q1: Which electrical parameters must match when substituting a PNP BJT transistor like BC557C,126?
A1: Substitution requires matching transistor type, maximum voltage between collector and emitter, collector current rating, collector-emitter saturation voltage, DC current gain, power dissipation, transition frequency, operating temperature, mounting type, and package.
Q2: Are active substitutes compatible with TO-92-3 through-hole mounting?
A2: All listed substitutes share the TO-92-3 (TO-226-3) through-hole package specification, ensuring mechanical compatibility for PCB or prototyping use.
Q3: Is RoHS3 and REACH compliance maintained in substitute options?
A3: Substitute transistors with explicit "ROHS3 Compliant" and "REACH Unaffected" status maintain required environmental and regulatory compliance for manufacturing and distribution.
Q4: Why is it necessary to select a substitute with matching part status and certifications?
A4: The original BC557C,126 is obsolete. Selecting parts with "Active" status and identical certifications is essential to ensure availability, compliance, and reliability for new designs and ongoing maintenance.
Q5: Do substitute parts maintain similar electrical characteristics compared to BC557C,126?
A5: Substitute options are selected strictly based on provided key parameters, enabling equivalent performance in PNP BJT applications with similar collector-emitter voltage ratings, collector current capacity, and mechanical fit.
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