Equivalent & Substitute Parts Reference for BC557C,126 (NXP USA Inc.)

Part Overview

The BC557C,126 from NXP USA Inc. is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in TO-92-3 packages. It features a maximum collector-emitter voltage of 45 V, a collector current of 100 mA, and a transition frequency of 100 MHz. The device supports power dissipation of up to 500 mW and is compliant with RoHS3 and REACH requirements. This part is classified as obsolete, making it necessary to identify substitute or equivalent transistors for ongoing designs and maintenance involving BJTs in similar electrical and mechanical configurations.

Substiute Parts

BC557C,126
NXP USA Inc.In Stock: 784BC557C,126 Datasheet
BC557C,126
Current Part
2N3906TA
Fairchild SemiconductorIn Stock: 323632N3906TA Datasheet
2N3906TA
MFR Recommended
2N3906TAR
onsemiIn Stock: 92672N3906TAR Datasheet
2N3906TAR
MFR Recommended
2N3906TF
onsemiIn Stock: 13532N3906TF Datasheet
2N3906TF
MFR Recommended
2N3906TFR
onsemiIn Stock: 14052N3906TFR Datasheet
2N3906TFR
MFR Recommended
2N4403TA
onsemiIn Stock: 601242N4403TA Datasheet
2N4403TA
MFR Recommended
2N4403TAR
onsemiIn Stock: 205002N4403TAR Datasheet
2N4403TAR
MFR Recommended
2N4403TF
onsemiIn Stock: 15122N4403TF Datasheet
2N4403TF
MFR Recommended
2N4403TFR
onsemiIn Stock: 23282N4403TFR Datasheet
2N4403TFR
MFR Recommended
BC32725TA
onsemiIn Stock: 45382BC32725TA Datasheet
BC32725TA
MFR Recommended
BC32740TA
onsemiIn Stock: 4970BC32740TA Datasheet
BC32740TA
MFR Recommended
BC557ATA
Fairchild SemiconductorIn Stock: 860BC557ATA Datasheet
BC557ATA
MFR Recommended
BC557BTA
onsemiIn Stock: 6210BC557BTA Datasheet
BC557BTA
MFR Recommended
BC557BTF
onsemiIn Stock: 41658BC557BTF Datasheet
BC557BTF
MFR Recommended

Key Parameters

Parameter Value
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 45 V
Current - Collector (Ic) (Max) 100 mA
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Power - Max 500 mW
Frequency - Transition 100MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3
RoHS Status ROHS3 Compliant
REACH Status REACH Unaffected
Part Status Obsolete

Substitute Part Grouping Explanation

Substitute selection for transistors in the BJTs, PNP category is based strictly on matching the following key electrical and mechanical parameters: transistor type, collector-emitter breakdown voltage, collector current rating, collector-emitter saturation voltage, cutoff current, DC current gain, power dissipation, transition frequency, operating temperature range, mounting type, and package/case compatibility. Substitution validity is narrowly restricted to parts matching these fields as explicitly provided.

Parameter Comparison

Manufacturer Part Number Transistor Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Vce Saturation (Max) DC Current Gain (hFE) (Min) Power - Max Frequency - Transition Operating Temperature Mounting Type Package / Case RoHS Status REACH Status Part Status
BC557C,126 PNP 45 V 100 mA 650mV @ 5mA, 100mA 420 @ 2mA, 5V 500 mW 100MHz 150°C (TJ) Through Hole TO-226-3, TO-92-3 ROHS3 Compliant REACH Unaffected Obsolete
2N3906TA PNP 40 V 200 mA 400mV @ 5mA, 50mA 100 @ 10mA, 1V 625 mW 250MHz -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 ROHS3 Compliant REACH Unaffected Active
2N3906TAR PNP 40 V 200 mA 400mV @ 5mA, 50mA 100 @ 10mA, 1V 625 mW 250MHz -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 ROHS3 Compliant REACH Unaffected Active
BC557BTF PNP 45 V 100 mA 650mV @ 5mA, 100mA 200 @ 2mA, 5V 500 mW 150MHz 150°C (TJ) Through Hole TO-226-3, TO-92-3 ROHS3 Compliant REACH Unaffected Active
BC557BTA PNP 45 V 100 mA 650mV @ 5mA, 100mA 200 @ 2mA, 5V 500 mW 150MHz 150°C (TJ) Through Hole TO-226-3, TO-92-3 ROHS3 Compliant REACH Unaffected Active
2N4403TA PNP 40 V 600 mA 750mV @ 50mA, 500mA 100 @ 150mA, 2V 625 mW 200MHz -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 ROHS3 Compliant REACH Unaffected Active
BC557ATA PNP 45 V 100 mA 650mV @ 5mA, 100mA 110 @ 2mA, 5V 500 mW 150MHz 150°C (TJ) Through Hole TO-226-3, TO-92-3 - - Active

Engineering Selection Recommendations

Selection of substitute transistors for BC557C,126 should exclusively consider alternatives with matching or higher compliance and certification standards, including ROHS3 and REACH unaffected status. The original part is discontinued (obsolete). Substitute components listed with an "Active" part status and equivalent certification are suitable for direct use in legacy or new designs requiring transistors within the BJTs, PNP category and TO-92-3 mechanical format.

Frequently Asked Questions (FAQ)

Q1: Which electrical parameters must match when substituting a PNP BJT transistor like BC557C,126?
A1: Substitution requires matching transistor type, maximum voltage between collector and emitter, collector current rating, collector-emitter saturation voltage, DC current gain, power dissipation, transition frequency, operating temperature, mounting type, and package.

Q2: Are active substitutes compatible with TO-92-3 through-hole mounting?
A2: All listed substitutes share the TO-92-3 (TO-226-3) through-hole package specification, ensuring mechanical compatibility for PCB or prototyping use.

Q3: Is RoHS3 and REACH compliance maintained in substitute options?
A3: Substitute transistors with explicit "ROHS3 Compliant" and "REACH Unaffected" status maintain required environmental and regulatory compliance for manufacturing and distribution.

Q4: Why is it necessary to select a substitute with matching part status and certifications?
A4: The original BC557C,126 is obsolete. Selecting parts with "Active" status and identical certifications is essential to ensure availability, compliance, and reliability for new designs and ongoing maintenance.

Q5: Do substitute parts maintain similar electrical characteristics compared to BC557C,126?
A5: Substitute options are selected strictly based on provided key parameters, enabling equivalent performance in PNP BJT applications with similar collector-emitter voltage ratings, collector current capacity, and mechanical fit.

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