BC556ABU Equivalent & Substitute Parts

Part Overview

The BC556ABU is an active small-signal PNP bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. The device operates at a maximum collector current of 100 mA with a collector-emitter breakdown voltage of 65 V and a maximum power dissipation of 500 mW. The BC556ABU is housed in a TO-92-3 through-hole package and is RoHS3 compliant. Substitute parts are identified when they maintain identical electrical specifications and mechanical compatibility, ensuring direct functional replacement without circuit redesign.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	65	V
Vce Saturation (Max) @ Ib, Ic	650 mV @ 5 mA, 100 mA	—
Current - Collector Cutoff (Max)	15	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 2 mA, 5 V	—
Power - Max	500	mW
Frequency - Transition	150	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-92-3 (TO-226AA)	—
Product Status	Active	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the BC556ABU is determined by strict equivalence across all critical electrical and mechanical parameters. The following parameters establish the substitution criteria:

Transistor Type: PNP configuration
Maximum Collector Current: 100 mA
Collector-Emitter Breakdown Voltage: 65 V
Saturation Voltage: 650 mV @ 5 mA, 100 mA
Collector Cutoff Current: 15 nA (ICBO)
DC Current Gain (hFE): 110 minimum @ 2 mA, 5 V
Maximum Power Dissipation: 500 mW
Transition Frequency: 150 MHz
Maximum Operating Temperature: 150°C
Package Type: TO-92-3 through-hole configuration

Substitute parts must match all parameters listed above without deviation. Parts meeting these criteria are electrically and mechanically interchangeable with the BC556ABU.

Parameter Comparison

Parameter	BC556ABU (onsemi)	BC556ABU (Fairchild Semiconductor)
Transistor Type	PNP	PNP
Current - Collector (Ic) (Max)	100 mA	100 mA
Voltage - Collector Emitter Breakdown (Max)	65 V	65 V
Vce Saturation (Max) @ Ib, Ic	650 mV @ 5 mA, 100 mA	650 mV @ 5 mA, 100 mA
Current - Collector Cutoff (Max)	15 nA (ICBO)	15 nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 2 mA, 5 V	110 @ 2 mA, 5 V
Power - Max	500 mW	500 mW
Frequency - Transition	150 MHz	150 MHz
Operating Temperature (TJ)	150°C	150°C
Mounting Type	Through Hole	Through Hole
Package / Case	TO-92-3 (TO-226AA)	TO-92-3 (TO-226AA)
Product Status	Active	Active
RoHS Status	ROHS3 Compliant	Not specified in data

Engineering Selection Recommendations

The BC556ABU manufactured by Fairchild Semiconductor is a direct parametric equivalent to the onsemi BC556ABU. Both devices are active products with identical electrical specifications and mechanical packaging. Selection between these two sources is based on availability, supply chain requirements, and organizational procurement policies.

The onsemi BC556ABU carries explicit RoHS3 compliance certification. The Fairchild Semiconductor BC556ABU meets all electrical and mechanical substitution criteria; however, RoHS compliance status is not specified in the provided data. For applications requiring documented RoHS3 compliance, the onsemi source is the appropriate selection.

Both devices are suitable for through-hole PCB assembly and operate within the same thermal and electrical operating ranges. No circuit modifications are required when substituting between these two sources.

Frequently Asked Questions (FAQ)

Q: Can the BC556ABU from Fairchild Semiconductor be used as a direct replacement for the onsemi BC556ABU?

A: Yes. Both devices share identical electrical specifications, including collector current rating (100 mA), breakdown voltage (65 V), saturation voltage (650 mV), DC current gain (110 minimum), power dissipation (500 mW), and transition frequency (150 MHz). Both are packaged in TO-92-3 through-hole configuration. Direct substitution is possible without circuit modification.

Q: Are there any package compatibility differences between these two sources?

A: No. Both the onsemi and Fairchild Semiconductor versions use the TO-92-3 (TO-226AA) through-hole package. Pin configuration, lead spacing, and mounting requirements are identical.

Q: What is the significance of the 150 MHz transition frequency specification?

A: The transition frequency (fT) of 150 MHz defines the maximum frequency at which the transistor maintains useful current gain. This specification is identical across both sources and determines suitability for high-frequency switching and amplification applications.

Q: Does RoHS3 compliance affect functional performance?

A: RoHS3 compliance relates to material composition and environmental regulations, not functional performance. Both devices operate identically within their specified electrical parameters. The onsemi source carries explicit RoHS3 certification; compliance status for the Fairchild Semiconductor source is not documented in the provided data.

Q: What are the critical parameters that must match for substitution?

A: All of the following parameters must match exactly: transistor type (PNP), maximum collector current (100 mA), collector-emitter breakdown voltage (65 V), saturation voltage (650 mV @ 5 mA, 100 mA), collector cutoff current (15 nA), DC current gain (110 minimum @ 2 mA, 5 V), maximum power dissipation (500 mW), transition frequency (150 MHz), operating temperature (150°C), and package type (TO-92-3).

Q: Can the BC556ABU be used in both switching and amplification circuits?

A: Yes. The electrical specifications of the BC556ABU support both switching and linear amplification applications. The 150 MHz transition frequency and 500 mW power rating accommodate a range of circuit topologies within the specified operating parameters.

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