BC556 Equivalent & Substitute Parts

Part Overview

The BC556 is a small-signal PNP bipolar junction transistor (BJT) manufactured by onsemi, housed in a TO-92-3 through-hole package. This device is rated for 65 V collector-emitter breakdown voltage, 100 mA maximum collector current, and 500 mW power dissipation. The BC556 operates at a transition frequency of 150 MHz with a minimum DC current gain of 110 at specified conditions.

The BC556 carries an obsolete product status. Identifying equivalent substitute parts ensures design continuity and maintains supply chain reliability for applications currently utilizing this component.

Substiute Parts

BC556
onsemiIn Stock: 38505BC556 Datasheet
BC556
Current Part
BC556ABU
Fairchild SemiconductorIn Stock: 15385BC556ABU Datasheet
BC556ABU
Parametric Equivalent
BC556ABU
Fairchild SemiconductorIn Stock: 15385BC556ABU Datasheet
BC556ABU
Parametric Equivalent

Key Parameters

Parameter Value
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 65 V
Current - Collector (Ic) (Max) 100 mA
Vce Saturation (Max) @ Ib, Ic 650 mV @ 5 mA, 100 mA
Current - Collector Cutoff (Max) 15 nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2 mA, 5 V
Power - Max 500 mW
Frequency - Transition 150 MHz
Operating Temperature (TJ) 150°C
Mounting Type Through Hole
Package / Case TO-92-3 (TO-226AA)

Substitute Part Grouping Explanation

Substitute parts for the BC556 are identified based on electrical and mechanical parameter equivalence. The substitution criteria are strictly limited to the following parameters:

Transistor polarity (PNP), maximum collector-emitter breakdown voltage (65 V), maximum collector current (100 mA), saturation voltage characteristics (650 mV @ 5 mA, 100 mA), collector cutoff current (15 nA ICBO), minimum DC current gain (110 @ 2 mA, 5 V), maximum power dissipation (500 mW), transition frequency (150 MHz), maximum operating junction temperature (150°C), through-hole mounting configuration, and TO-92-3 package specification.

Parts meeting all these electrical and mechanical parameters are classified as parametric equivalents and are suitable for direct substitution in circuit applications.

Parameter Comparison

Parameter BC556 (onsemi) BC556ABU (Fairchild Semiconductor)
Transistor Type PNP PNP
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V
Current - Collector (Ic) (Max) 100 mA 100 mA
Vce Saturation (Max) @ Ib, Ic 650 mV @ 5 mA, 100 mA 650 mV @ 5 mA, 100 mA
Current - Collector Cutoff (Max) 15 nA (ICBO) 15 nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2 mA, 5 V 110 @ 2 mA, 5 V
Power - Max 500 mW 500 mW
Frequency - Transition 150 MHz 150 MHz
Operating Temperature (TJ) 150°C 150°C
Mounting Type Through Hole Through Hole
Package / Case TO-92-3 (TO-226AA) TO-92-3 (TO-226AA)
Product Status Obsolete Active

Engineering Selection Recommendations

The BC556ABU manufactured by Fairchild Semiconductor is a parametric equivalent to the BC556. All electrical characteristics and mechanical specifications are identical across the comparison parameters. The BC556ABU maintains active product status, ensuring ongoing availability and supply chain support.

Selection of the BC556ABU as a substitute for the obsolete BC556 provides functional equivalence without circuit redesign. The active product status of the BC556ABU supports long-term component sourcing and procurement reliability.

Frequently Asked Questions (FAQ)

Q: Can the BC556ABU be used as a direct replacement for the BC556?

A: Yes. The BC556ABU meets all electrical and mechanical parameters specified for the BC556, including transistor type, voltage ratings, current ratings, gain characteristics, power dissipation, frequency response, temperature rating, and TO-92-3 package configuration.

Q: What is the primary reason for substituting the BC556?

A: The BC556 carries an obsolete product status. The BC556ABU provides an active alternative with identical electrical and mechanical specifications.

Q: Are there any package or pinout differences between the BC556 and BC556ABU?

A: No. Both devices use the TO-92-3 (TO-226AA) through-hole package with identical pinout configuration.

Q: Do the saturation voltage characteristics differ between these parts?

A: No. Both the BC556 and BC556ABU specify 650 mV maximum saturation voltage at 5 mA base current and 100 mA collector current.

Q: Is the DC current gain specification the same for both parts?

A: Yes. Both devices specify a minimum DC current gain (hFE) of 110 at 2 mA collector current and 5 V collector-emitter voltage.

Q: What is the maximum operating junction temperature for both devices?

A: Both the BC556 and BC556ABU are rated for a maximum junction temperature of 150°C.

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