BC547B_S00Z Equivalent & Substitute Parts

Part Overview

The BC547B_S00Z is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a 50 V collector-emitter breakdown voltage rating, 100 mA maximum collector current, and 500 mW power dissipation capability in a through-hole TO-92-3 package. The part is classified as obsolete, necessitating identification of active equivalent alternatives that maintain functional compatibility for existing designs and new production requirements.

Substiute Parts

BC547B_S00Z
onsemiIn Stock: 1154BC547B_S00Z Datasheet
BC547B_S00Z
Current Part
BC547B
Diotec SemiconductorIn Stock: 19745BC547B Datasheet
BC547B
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 100 mA
Power - Max 500 mW
Frequency - Transition 300 MHz
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V
Mounting Type Through Hole
Package / Case TO-92-3

Substitute Part Grouping Explanation

Substitution of the BC547B_S00Z is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Transistor type must be NPN
  • Collector-emitter breakdown voltage must equal or exceed 50 V
  • Maximum collector current must equal or exceed 100 mA
  • Maximum power dissipation must equal or exceed 500 mW
  • Transition frequency must equal or exceed 300 MHz
  • Vce saturation characteristics must be compatible with application requirements
  • DC current gain (hFE) must support intended circuit operation

Mechanical Compatibility Criteria:

  • Package type must be TO-92-3 (TO-226-3)
  • Through-hole mounting configuration required
  • Pin configuration must match TO-92-3 standard

The BC547B manufactured by Diotec Semiconductor meets these substitution criteria with the following considerations: the device maintains NPN configuration, 100 mA collector current rating, 500 mW power rating, and 300 MHz transition frequency. The collector-emitter breakdown voltage is rated at 45 V, which is lower than the original 50 V specification. The DC current gain is higher at 200 @ 2mA, 5V compared to the original 110 @ 2mA, 5V. Both devices share identical Vce saturation characteristics and TO-92-3 package configuration.

Parameter Comparison

Parameter BC547B_S00Z (onsemi) BC547B (Diotec Semiconductor) Unit
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 50 45 V
Current - Collector (Ic) (Max) 100 100 mA
Power - Max 500 500 mW
Frequency - Transition 300 300 MHz
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V 200 @ 2mA, 5V
Operating Temperature Range Up to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-92-3 TO-92-3
Product Status Obsolete Active

Engineering Selection Recommendations

The BC547B manufactured by Diotec Semiconductor is an active substitute for the obsolete BC547B_S00Z from onsemi. Selection of this substitute is based on the following engineering factors:

Product Status: The original BC547B_S00Z is classified as obsolete, making the Diotec Semiconductor BC547B a necessary alternative for continued component availability and production support.

Electrical Compatibility: The substitute device maintains identical maximum collector current (100 mA), power dissipation (500 mW), transition frequency (300 MHz), and Vce saturation characteristics. The collector-emitter breakdown voltage of 45 V is 5 V lower than the original specification; this difference is acceptable in applications where the circuit design operates below 45 V or where the additional 5 V margin is not critical to system performance.

DC Current Gain: The Diotec device exhibits a higher minimum DC current gain (200 @ 2mA, 5V versus 110 @ 2mA, 5V). This higher gain may improve circuit efficiency and reduce base drive requirements in switching applications.

Compliance and Certifications: Both devices share identical ECCN (EAR99) and HTSUS (8541.21.0075) classifications. The Diotec substitute maintains through-hole TO-92-3 package compatibility, ensuring direct mechanical and electrical interchangeability in existing PCB layouts.

Temperature Range: The Diotec device provides an extended operating temperature range (-55°C to 150°C) compared to the original specification (up to 150°C), offering improved performance in low-temperature environments.

Frequently Asked Questions (FAQ)

Q: Can the BC547B from Diotec Semiconductor directly replace the BC547B_S00Z from onsemi?

A: Yes, the Diotec BC547B is a direct substitute for through-hole applications. Both devices share identical TO-92-3 package configuration, pin assignment, and primary electrical characteristics including collector current, power dissipation, and transition frequency. The primary difference is the collector-emitter breakdown voltage rating (45 V versus 50 V), which is acceptable for most general-purpose switching and amplification circuits operating below 45 V.

Q: What is the significance of the 5 V difference in collector-emitter breakdown voltage?

A: The BC547B_S00Z is rated for 50 V maximum collector-emitter breakdown, while the Diotec BC547B is rated for 45 V. This difference means the Diotec device is suitable for applications where the maximum collector-emitter voltage does not exceed 45 V. For circuits designed to operate at or below 45 V, this difference has no practical impact. Applications requiring operation above 45 V require verification that the circuit design does not exceed this limit.

Q: Are the DC current gain specifications compatible between these devices?

A: The DC current gain specifications differ between the two devices. The BC547B_S00Z specifies a minimum of 110 @ 2mA, 5V, while the Diotec BC547B specifies a minimum of 200 @ 2mA, 5V. The higher gain of the Diotec device is compatible with existing designs, as it provides equal or better performance in base drive efficiency and switching speed. Circuits designed for the lower gain of the original device will function correctly with the higher-gain substitute.

Q: Is the package configuration identical between these devices?

A: Yes, both devices use the TO-92-3 (TO-226-3) through-hole package with identical pin configuration. The Diotec device features formed leads, which is a standard manufacturing variation that does not affect electrical performance or PCB compatibility.

Q: What is the impact of the extended temperature range on the Diotec substitute?

A: The Diotec BC547B operates from -55°C to 150°C, compared to the original specification of up to 150°C. This extended lower temperature limit provides improved performance in cold environments and is fully backward compatible with applications designed for the original temperature range.

Q: Are there any compliance or regulatory differences between these devices?

A: Both devices share identical ECCN (EAR99) and HTSUS (8541.21.0075) classifications, indicating equivalent export control and tariff treatment. The Diotec device does not have RoHS status specified, while the original device is REACH Unaffected. These differences do not affect component selection for most applications.

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