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BC33716_J35Z Equivalent & Substitute Parts
Part Overview
The BC33716_J35Z is an NPN bipolar junction transistor manufactured by onsemi, designed for small-signal switching and amplification applications. This component operates at a maximum collector current of 800 mA with a collector-emitter breakdown voltage of 45 V and a maximum power dissipation of 625 mW. The device is housed in a TO-92-3 through-hole package.
The BC33716_J35Z is classified as obsolete. Equivalent substitute parts are available from active product lines that maintain identical electrical and mechanical specifications, ensuring direct functional replacement in existing designs without circuit modification.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Current - Collector (Ic) (Max) | 800 | mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 | V |
| Vce Saturation (Max) @ Ib, Ic | 700 mV @ 50 mA, 500 mA | — |
| Current - Collector Cutoff (Max) | 100 | nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100 mA, 1 V | — |
| Power - Max | 625 | mW |
| Frequency - Transition | 100 | MHz |
| Operating Temperature (TJ) | 150 | °C |
| Mounting Type | Through Hole | — |
| Package / Case | TO-92-3 (TO-226AA) | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitute parts for the BC33716_J35Z are qualified based on strict electrical and mechanical parameter equivalence. The substitution criteria are:
- Transistor Type: NPN configuration
- Maximum Collector Current: 800 mA
- Collector-Emitter Breakdown Voltage: 45 V
- Maximum Power Dissipation: 625 mW
- DC Current Gain (hFE): Minimum 100 @ 100 mA, 1 V
- Transition Frequency: 100 MHz
- Saturation Voltage: 700 mV @ 50 mA, 500 mA
- Collector Cutoff Current: 100 nA maximum
- Operating Temperature: 150°C (TJ)
- Package: TO-92-3 through-hole configuration
- Mounting Type: Through Hole
All substitute parts listed maintain these parameters identically, enabling direct replacement in circuit applications without design modification.
Parameter Comparison
| Parameter | BC33716_J35Z (onsemi) | BC33716BU (Fairchild) | BC33716TA (Fairchild) |
|---|---|---|---|
| Transistor Type | NPN | NPN | NPN |
| Current - Collector (Ic) (Max) | 800 mA | 800 mA | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V | 45 V | 45 V |
| Vce Saturation (Max) @ Ib, Ic | 700 mV @ 50 mA, 500 mA | 700 mV @ 50 mA, 500 mA | 700 mV @ 50 mA, 500 mA |
| Current - Collector Cutoff (Max) | 100 nA | 100 nA | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100 mA, 1 V | 100 @ 100 mA, 1 V | 100 @ 100 mA, 1 V |
| Power - Max | 625 mW | 625 mW | 625 mW |
| Frequency - Transition | 100 MHz | 100 MHz | 100 MHz |
| Operating Temperature (TJ) | 150°C | 150°C | 150°C |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
| Product Status | Obsolete | Active | Active |
| ECCN | EAR99 | EAR99 | EAR99 |
| HTSUS | 8541.21.0075 | 8541.21.0075 | 8541.21.0075 |
Engineering Selection Recommendations
The BC33716_J35Z is classified as obsolete. Both substitute parts—BC33716BU and BC33716TA—are manufactured by Fairchild Semiconductor and carry active product status, ensuring continued availability and supply chain reliability.
BC33716BU is supplied in bulk packaging and maintains all electrical and mechanical specifications identical to the original part. This option is suitable for production environments requiring high-volume component sourcing.
BC33716TA is supplied in standard packaging and maintains all electrical and mechanical specifications identical to the original part. This option is suitable for general component replacement and repair applications.
Both substitute parts are classified under ECCN EAR99 and HTSUS 8541.21.0075, matching the regulatory classification of the original component. Selection between BC33716BU and BC33716TA depends on packaging requirements and supply chain logistics rather than electrical performance.
Frequently Asked Questions (FAQ)
Q: Can BC33716BU and BC33716TA be used interchangeably with BC33716_J35Z?
A: Yes. Both substitute parts maintain identical electrical parameters (800 mA maximum collector current, 45 V breakdown voltage, 625 mW power dissipation, 100 MHz transition frequency, and 100 minimum DC current gain) and identical mechanical specifications (TO-92-3 through-hole package). Direct substitution is supported without circuit modification.
Q: What is the difference between BC33716BU and BC33716TA?
A: The primary difference is packaging format. BC33716BU is supplied in bulk packaging, while BC33716TA is supplied in standard packaging. Electrical and mechanical specifications are identical. Selection depends on procurement and inventory management requirements.
Q: Why is the BC33716_J35Z listed as obsolete?
A: The BC33716_J35Z is no longer manufactured by onsemi. However, equivalent parts from active product lines are available from Fairchild Semiconductor, ensuring continued access to functionally identical components.
Q: Are there any compliance or regulatory differences between the original and substitute parts?
A: No. All parts share identical ECCN (EAR99) and HTSUS (8541.21.0075) classifications, ensuring equivalent regulatory treatment in export and import applications.
Q: What parameters must remain identical for a part to be considered a direct substitute?
A: Direct substitution requires matching transistor type (NPN), maximum collector current (800 mA), collector-emitter breakdown voltage (45 V), maximum power dissipation (625 mW), DC current gain (100 minimum @ 100 mA, 1 V), transition frequency (100 MHz), saturation voltage (700 mV @ 50 mA, 500 mA), collector cutoff current (100 nA maximum), operating temperature (150°C), and package configuration (TO-92-3 through-hole).
Q: Can these parts be used in new designs?
A: Yes. Both BC33716BU and BC33716TA carry active product status and are suitable for new design implementations. The BC33716_J35Z, being obsolete, is not recommended for new designs; however, the active substitutes provide equivalent functionality.
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