BC337-16,112 Equivalent & Substitute Parts Reference

Part Overview

The BC337-16,112 is an NPN bipolar junction transistor manufactured by NXP USA Inc., designed for general-purpose switching and amplification applications. This device features a TO-92-3 through-hole package with a maximum collector current of 500 mA, collector-emitter breakdown voltage of 45 V, and power dissipation of 625 mW. The BC337-16,112 is classified as obsolete, making equivalent substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage ratings, current handling capability, and thermal characteristics while accommodating the through-hole TO-92 package format.

Key Parameters

Parameter	BC337-16,112	Unit
Transistor Type	NPN	-
Current - Collector (Ic) Max	500	mA
Voltage - Collector Emitter Breakdown (Max)	45	V
Vce Saturation (Max) @ Ib, Ic	700mV @ 50mA, 500mA	-
DC Current Gain (hFE) Min @ Ic, Vce	100 @ 100mA, 1V	-
Power - Max	625	mW
Frequency - Transition	100	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	-
Package / Case	TO-92-3 (TO-226AA)	-
Product Status	Obsolete	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts for the BC337-16,112 are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Transistor polarity: NPN type required
Package format: TO-92-3 through-hole configuration mandatory
Collector-emitter breakdown voltage: minimum 45 V
Maximum collector current: minimum 500 mA
Power dissipation: minimum 625 mW
DC current gain (hFE): minimum 100 at specified test conditions
RoHS3 compliance required

Acceptable Variation Parameters:

Transition frequency may exceed 100 MHz
Operating temperature range may exceed 150°C maximum
Vce saturation may vary within device specifications
Collector cutoff current (ICBO) specifications may differ

The three identified substitute parts meet these criteria with the following distinctions:

BC33716BU (Fairchild Semiconductor): Manufacturer-recommended substitute with identical voltage and power ratings, higher current capability (800 mA), and matching frequency response.

2N4401BU (onsemi): Active product with slightly lower voltage rating (40 V) but higher current capability (600 mA) and superior frequency response (250 MHz).

2N3417 APM PBFREE (Central Semiconductor Corp): Active product with higher voltage rating (50 V) and power dissipation (1.5 W), suitable for applications requiring enhanced thermal margin.

Parameter Comparison

Parameter	BC337-16,112	BC33716BU	2N4401BU	2N3417 APM PBFREE	Unit
Manufacturer	NXP USA Inc.	Fairchild Semiconductor	onsemi	Central Semiconductor Corp	-
Product Status	Obsolete	Active	Active	Active	-
Transistor Type	NPN	NPN	NPN	NPN	-
Current - Collector (Ic) Max	500	800	600	500	mA
Voltage - Collector Emitter Breakdown (Max)	45	45	40	50	V
Vce Saturation (Max) @ Ib, Ic	700mV @ 50mA, 500mA	700mV @ 50mA, 500mA	750mV @ 50mA, 500mA	300mV @ 3mA, 50mA	-
DC Current Gain (hFE) Min @ Ic, Vce	100 @ 100mA, 1V	100 @ 100mA, 1V	100 @ 150mA, 1V	180 @ 2mA, 4.5V	-
Power - Max	625	625	625	1500	mW
Frequency - Transition	100	100	250	-	MHz
Operating Temperature (TJ)	150	150	-55 to 150	-65 to 150	°C
Package / Case	TO-92-3	TO-92-3	TO-92-3	TO-92-3	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	-

Engineering Selection Recommendations

BC33716BU Selection Criteria: BC33716BU is the primary recommended substitute for direct replacement applications. This part is manufactured by Fairchild Semiconductor and maintains active product status, ensuring long-term availability and supply chain stability. The BC33716BU matches the BC337-16,112 across all critical electrical parameters: 45 V collector-emitter breakdown voltage, 100 MHz transition frequency, 625 mW power dissipation, and 100 minimum DC current gain. The device provides enhanced current capability at 800 mA maximum collector current, offering design margin for applications approaching the 500 mA specification limit. Both parts share identical Vce saturation characteristics and maximum operating temperature of 150°C. ROHS3 compliance and EAR99 export classification are maintained.

2N4401BU Selection Criteria: 2N4401BU is suitable for applications where transition frequency performance is prioritized. Manufactured by onsemi with active product status, this device provides 250 MHz transition frequency, double that of the BC337-16,112. The 40 V collector-emitter breakdown voltage is 5 V lower than the original specification; this part is appropriate only for circuits with maximum operating voltages not exceeding 40 V. The 600 mA maximum collector current and 625 mW power dissipation meet or exceed the original requirements. DC current gain specification of 100 at 150 mA, 1V is compatible with the BC337-16,112 at 100 mA, 1V. Extended operating temperature range (-55°C to 150°C) provides additional thermal margin.

2N3417 APM PBFREE Selection Criteria: 2N3417 APM PBFREE is appropriate for applications requiring enhanced thermal performance or higher voltage margin. Manufactured by Central Semiconductor Corp with active product status, this device provides 50 V collector-emitter breakdown voltage and 1.5 W maximum power dissipation, both exceeding the BC337-16,112 specifications. The 500 mA maximum collector current matches the original part exactly. Extended operating temperature range (-65°C to 150°C) and superior power handling capability make this part suitable for thermally demanding applications. DC current gain of 180 at 2 mA, 4.5V exceeds the original specification. Transition frequency is not specified for this device; applications requiring specific frequency response should verify compatibility through detailed datasheets.

All three substitute parts maintain ROHS3 compliance and EAR99 export classification consistent with the BC337-16,112.

Frequently Asked Questions (FAQ)

Q: Can BC33716BU directly replace BC337-16,112 in existing designs?

A: Yes. BC33716BU is the direct equivalent substitute. Both devices share identical electrical specifications for collector-emitter breakdown voltage (45 V), transition frequency (100 MHz), power dissipation (625 mW), DC current gain (100 minimum), and Vce saturation characteristics. The TO-92-3 package format is identical. BC33716BU provides higher current capability (800 mA vs. 500 mA), which does not create compatibility issues in existing circuits. No circuit modifications are required.

Q: What is the primary difference between BC33716BU and 2N4401BU?

A: The primary difference is transition frequency and collector-emitter breakdown voltage. BC33716BU maintains 100 MHz transition frequency matching the BC337-16,112, while 2N4401BU provides 250 MHz. However, 2N4401BU has a 40 V collector-emitter breakdown voltage compared to 45 V for both BC33716BU and BC337-16,112. Select 2N4401BU only for applications where maximum operating voltage does not exceed 40 V and higher frequency response is beneficial.

Q: Is 2N3417 APM PBFREE suitable for high-temperature applications?

A: 2N3417 APM PBFREE supports extended operating temperature range from -65°C to 150°C and provides 1.5 W maximum power dissipation, compared to 625 mW for the BC337-16,112. These characteristics make it suitable for applications with elevated ambient temperatures or higher power dissipation requirements. However, transition frequency is not specified for this device. Verify frequency response compatibility through the manufacturer's detailed datasheet before selection for frequency-sensitive applications.

Q: Are all substitute parts available in the same package format?

A: Yes. All three substitute parts (BC33716BU, 2N4401BU, and 2N3417 APM PBFREE) are available in TO-92-3 through-hole package format, identical to the BC337-16,112. Pin configuration and lead spacing are compatible with existing PCB layouts. No mechanical modifications to circuit board designs are required.

Q: What is the significance of product status (Active vs. Obsolete)?

A: Product status indicates supply chain availability and manufacturer support. The BC337-16,112 is classified as obsolete, meaning NXP USA Inc. no longer manufactures this device and existing inventory will eventually deplete. All three substitute parts maintain active product status with their respective manufacturers (Fairchild Semiconductor, onsemi, and Central Semiconductor Corp), ensuring continued availability, technical support, and long-term supply chain stability for new designs and production runs.

Q: Do all substitute parts meet RoHS3 compliance requirements?

A: Yes. BC33716BU, 2N4401BU, and 2N3417 APM PBFREE are all ROHS3 compliant, matching the compliance status of the BC337-16,112. All parts are suitable for applications requiring RoHS3 certification and environmental compliance documentation.

Q: What collector current rating should I use for circuit design?

A: Use the minimum specified collector current rating across all candidate parts for conservative design. The BC337-16,112 specifies 500 mA maximum collector current. BC33716BU provides 800 mA, 2N4401BU provides 600 mA, and 2N3417 APM PBFREE provides 500 mA. For applications operating near the 500 mA limit, BC33716BU or 2N4401BU provide additional design margin. Verify actual circuit current requirements against the selected device's maximum rating.

Q: Can I use these substitute parts interchangeably in the same circuit?

A: BC33716BU is the preferred direct substitute with no circuit modifications required. 2N4401BU and 2N3417 APM PBFREE are compatible substitutes but require verification of specific application requirements. 2N4401BU requires confirmation that circuit maximum voltage does not exceed 40 V. 2N3417 APM PBFREE requires verification of frequency response requirements due to unspecified transition frequency. Consult detailed datasheets and perform circuit analysis before selecting alternatives to BC33716BU.

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